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Wu et al., 2013 - Google Patents

A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

Wu et al., 2013

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Document ID
2218949012294961969
Author
Wu Y
Lee C
Chu C
Yeh Y
Chen C
Lee W
Publication year
Publication venue
Japanese Journal of Applied Physics

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Snippet

A-plane GaN was grown on r-plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([bar 1 100] direction) at a low growth temperature. Then, increasing the …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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