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Fiorenza et al., 2017 - Google Patents

Channel mobility in GaN hybrid MOS-HEMT using SiO 2 as gate insulator

Fiorenza et al., 2017

Document ID
10593372848926999846
Author
Fiorenza P
Greco G
Iucolano F
Patti A
Roccaforte F
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

The channel mobility in SiO 2/GaN hybrid metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) has been studied. The formalism used for the inversion mobility in MOSFETs has been adapted to the case of GaN MOS-HEMTs, which operate in …
Continue reading at ieeexplore.ieee.org (other versions)

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