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Liu et al., 2021 - Google Patents

AlN/GaN superlattice channel HEMTs on silicon substrate

Liu et al., 2021

Document ID
6171456098531752223
Author
Liu S
Zhang W
Zhang J
Song X
Wu Y
Chen D
Xu S
Zhao S
Hao Y
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been demonstrated on a silicon substrate. High OFF-state breakdown voltage V BR of 670 V (gate- drain spacing L GD= 8 μm) along with a maximum output current of 196 mA/mm, a channel …
Continue reading at ieeexplore.ieee.org (other versions)

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