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Garg et al., 2023 - Google Patents

A novel stepped AlGaN hybrid buffer GaN HEMT for power electronics applications

Garg et al., 2023

Document ID
12372248958082527870
Author
Garg T
Kale S
Publication year
Publication venue
Microelectronics Reliability

External Links

Snippet

In this paper, a novel p-type gallium nitride (p-GaN) high electron mobility transistor (HEMT) is proposed and investigated for high power electronic applications. In the proposed device, a stepped hybrid Aluminium GaN (AlGaN) buffer layer with low Al content has been …
Continue reading at www.sciencedirect.com (other versions)

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