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Kurt et al., 2019 - Google Patents

Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques

Kurt et al., 2019

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Document ID
595426821341501631
Author
Kurt G
Gulseren M
Salkim G
Ural S
Kayal O
Ozturk M
Butun B
Kabak M
Ozbay E
Publication year
Publication venue
IEEE Journal of the Electron Devices Society

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Snippet

A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial …
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