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Tachiki et al., 2018 - Google Patents

Estimation of threshold voltage in SiC short-channel MOSFETs

Tachiki et al., 2018

Document ID
6656397894388791970
Author
Tachiki K
Ono T
Kobayashi T
Tanaka H
Kimoto T
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this brief, the influence of high-density traps at the SiO2/SiC interface on short-channel effects was investigated, and a model describing channel length dependence of the threshold voltage (ie, the gate voltage at a given drain current) is proposed. First, we …
Continue reading at ieeexplore.ieee.org (other versions)

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