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Gribisch et al., 2023 - Google Patents

Tuning of quasi-vertical GaN FinFETs fabricated on SiC substrates

Gribisch et al., 2023

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Document ID
1015956609281044771
Author
Gribisch P
Carrascon R
Darakchieva V
Lind E
Publication year
Publication venue
IEEE Transactions on Electron Devices

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In this work, we present the fabrication and investigation of the properties of quasi-vertical gallium nitride (GaN) fin field effect transistors (FinFETs) on silicon carbide (SiC) substrates and the influence of a postgate metallization annealing (PMA). The devices reveal low …
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