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TWI836726B - 高壓及高溫退火腔室 - Google Patents

高壓及高溫退火腔室 Download PDF

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TWI836726B
TWI836726B TW111143677A TW111143677A TWI836726B TW I836726 B TWI836726 B TW I836726B TW 111143677 A TW111143677 A TW 111143677A TW 111143677 A TW111143677 A TW 111143677A TW I836726 B TWI836726 B TW I836726B
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琴 德爾馬斯
史帝文 維哈佛貝可
寇迪斯 勒施基斯
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美商應用材料股份有限公司
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67248—Temperature monitoring
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

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Abstract

本發明的具體例關於用於退火一或多個半導體基板的設備與方法。在一具體例中，揭示一種處理腔室。處理腔室包括圍住內部容積的腔室主體、安置在內部容積中並設置以在處理期間支撐基板的基板支撐件、設置以提供處理流體進入內部容積的氣體分配盤、及設置以將處理流體維持在高於處理流體的凝結點的溫度之溫度受控流體線路。溫度受控流體線路包括氣體導管，該氣體導管流體地耦接至第一端處的腔室主體上的埠與第二端處的氣體分配盤。

Description

高壓及高溫退火腔室
本發明的具體例大體上關於製造積體電路，與特別是關於用於退火一或多個半導體基板的設備和方法。
半導體裝置(諸如，記憶體裝置、邏輯裝置、微處理器，等等)的形成涉及在半導體基板上方沉積一或更多膜。膜用於創造需要以製造半導體裝置的電路。退火是用於在沉積膜上達成各種效果的熱處理製程，以改善沉積膜的電氣性質。例如，退火可用於活化摻雜物、緻密化沉積膜、或改變成長膜的狀況。
自半導體裝置問世的數十年以來，半導體裝置幾何在尺寸上已顯著地減少。增加裝置密度已經導致具有減少的空間尺度的結構特徵。例如，形成現今半導體裝置的結構特徵的間隙與溝槽的深寬比(深度對寬度的比率)已經窄化至以材料填充間隙已經變得極度挑戰性的程度。
因此，需要用於退火半導體基板的改良設備與方法，其能應付關於製造現今半導體裝置的挑戰。
本發明的具體例關於用於退火半導體基板的設備與方法。在一具體例中，揭示一種處理腔室。處理腔室包括圍住內部容積的腔室主體、安置在內部容積中並設置以在處理期間支撐基板的基板支撐件、設置以提供處理流體進入內部容積的氣體分配盤、及設置以將處理流體維持在高於處理流體的凝結點之溫度的溫度受控流體線路。溫度受控流體線路包括氣體導管，其在第一端處流體地耦接至腔室主體的埠及在第二端處流體地耦接至氣體分配盤。
在另一實例中，處理腔室包括圍住內部容積的腔室主體、安置在內部容積中並設置以在處理期間支撐基板的基板支撐件、可操作以將內部容積維持在高於攝氏300度的溫度之一或多個腔室加熱器、設置以提供乾燥蒸汽進入內部容積的氣體分配盤、耦接至腔室主體並安置圍繞內部容積的一或多個熱屏蔽、流體地連接至內部容積的凝結器，凝結器設置以將乾燥蒸汽凝結、及將腔室主體的內部容積耦接至氣體分配盤的溫度受控流體線路。溫度受控流體線路設置以將乾燥蒸汽維持在高於乾燥蒸汽的凝結點的溫度。
在另一實例中，提供在處理腔室中退火一或多個基板的方法。方法包括將一或多個基板載入處理腔室的內部容積、將處理流體流動通過氣體導管進入內部容積、及將氣體導管與內部容積中的處理流體維持在高於處理流體的凝結點之溫度。
本發明的具體例關於退火一或多個半導體基板的設備與方法。基板可為單一基板或在單一腔室內批次地被退火。基板在退火期間暴露於高溫之高壓下的處理流體。當處理一或多個基板時，處理流體從氣體分配盤通過溫度受控流體線路流動進入腔室。處理流體藉由耦接於流體線路的一或多個加熱器而維持在高於處理流體的凝結點的溫度。流體線路耦接至凝結器，其中在完成退火之後，處理流體凝結成液相。使用來自透過溫度感測器得到的溫度量測之資訊控制流體線路上的加熱器，溫度感測器接合在流體線路的不同部分。顯示在圖1中並在此說明的批次處理腔室100，及顯示在圖2中並在此說明的單一基板處理腔室200，可用於執行在高溫下高壓退火處理之用途。
圖1為用於在高溫下高壓退火處理的批次處理腔室100的簡化前剖面視圖。批次處理腔室100具有主體110，帶有外表面112與圍住內部容積115的內表面113。在諸如圖1的某些具體例中，主體110具有環形剖面，然而在其他具體例中，主體110的剖面可為矩形或任何封閉形狀。主體110的外表面112可由抗腐蝕鋼(CRS)製成，諸如但不限於不鏽鋼。外表面112可被可選地覆蓋隔熱層，隔熱層防止來自批次處理腔室100的熱損失至外部環境。主體110的內表面113可由展示出高抗腐蝕性的鎳基鋼合金所製成或覆蓋，諸如但不限於HASTELLOY ®、ICONEL ®、及MONEL ®。可選地，主體110可由鎳基鋼合金所製造。
批次處理腔室100具有設置以可密封地封閉主體110內的內部容積115的門120，使得當門120開啟時，基板可傳送進出內部容積115。高壓密封122用於在處理期間將門120密封於主體110。高壓密封122可由高溫聚合物所製成，諸如但不限於全氟化彈性體(perfluoroelastomer)。冷卻通道124安置在門120或主體110中，鄰近於高壓密封122，以將高壓密封122維持在低於高壓密封122的最大安全操作溫度。冷卻劑(諸如但不限於惰性物、介電質、及高效熱傳流體)可在冷卻通道124內循環。藉由控制器180透過從溫度感測器116或流量計(未示出)接收的反饋而控制冷卻通道124內的冷卻劑的流動。
抗對流面板142可放置在門120與匣130之間。抗對流面板142將內部容積115分隔成匣130所在的熱處理區102及鄰近於門120的冷卻區104。抗對流面板142通常由如腔室主體110的相同材料所製造的金屬板。抗對流面板142可耦接至門120、匣130或其他合適結構。抗對流面板142可包括面向匣130的面144，面144設置以降低從匣130所在的區至鄰近於門120的主體110的區之熱傳量。面144可足夠大以抑制熱處理區與冷卻區102、104之間的對流。面144也可具有拋光表面或熱反射塗佈。抗對流面板142使得接壤於冷卻區104的腔室主體110的部分屏蔽於接壤於熱處理區102的腔室主體110的部分並使得接壤於冷卻區104的腔室主體110的部分維持在低於接壤於熱處理區102的腔室主體110的部分之溫度。因此，鄰近於門120並接觸接壤於冷卻區104的腔室主體110的部分之密封122較不可能由於超過其最大可操作溫度而失效。
批次處理腔室100具有形成通過主體110的埠117。埠117流體地連接至溫度受控流體線路190。流體線路190連接氣體分配盤150、凝結器160及埠117。流體線路190具有氣體導管192、來源導管157、入口隔離閥155、排氣導管163、及出口隔離閥165。一或多個加熱器152、154、158、196、164、166接合於流體線路190的不同部分。一或多個溫度感測器151、153、119、167及169接合於流體線路190的不同部分以得到溫度量測並提供溫度量測資訊至控制器180。
氣體導管192在一端處透過埠117流體地連接至內部容積115。氣體導管192具有四個部分，包括腔室導管118、T導管194、入口導管159及出口導管161。T導管194具有三個端：連接至入口導管159的第一端、連接至出口導管161的第二端及連接至腔室導管118的第三端。腔室導管118經由埠117流體地連接至內部容積115。入口導管159經由入口隔離閥155流體地連接至來源導管157。出口導管161經由出口隔離閥165流體地連接至排氣導管163。來源導管157流體地耦接至氣體分配盤150。排氣導管163流體地耦接至凝結器160。
腔室導管118接合於加熱器158。T導管194、入口導管159及出口導管161接合於加熱器196。來源導管157接合於加熱器152。入口隔離閥155接合於加熱器154。出口隔離閥165接合於加熱器164。排氣導管163接合於加熱器166。加熱器152、154、158、196、164、及166設置以將流動通過流體線路190的處理流體維持在高於處理流體的凝結點的溫度。例如，加熱器152、154、158、196、164、及166可設置以將流動通過流體線路190的處理流體維持在將處理流體維持為乾燥蒸汽或過熱(superheated)蒸汽的溫度。加熱器152、154、158、196、164、及166可被可選地以隔熱層覆蓋，以防止熱損失至外部環境。加熱器152、154、158、196、164、及166可為燈、電阻加熱元件、用於流動轉換流體的流體導管或其他合適加熱裝置。在一具體例中，加熱器為環繞流體線路的元件之電阻條帶。加熱器152、154、158、196、164、及166單獨地耦接至電源145。在一具體例中，加熱器152、154、158、196、164、及166的每一者可被獨立地控制。
溫度感測器151接合於來源導管157並設置以量測來源導管157的溫度。溫度感測器153接合於入口隔離閥155並設置以量測入口隔離閥155的溫度。溫度感測器119接合於腔室導管118並設置以量測腔室導管118的溫度。溫度讀數裝置156接收並顯示來自溫度感測器151、153及119的溫度量測。溫度感測器167接合於出口隔離閥165並設置以量測出口隔離閥165的溫度。溫度感測器169接合於排氣導管163並設置以量測排氣導管163的溫度。溫度讀數裝置162接收並顯示來自溫度感測器167及169的溫度量測。溫度讀數裝置156及162將溫度量測資訊發送至控制器180。感測器151、153、119、167、及169可為非接觸感測器，諸如紅外線感測器，或接觸感測器，諸如熱電偶。
入口隔離閥155與出口隔離閥165為關斷閥。當入口隔離閥155開啟時，出口隔離閥165關閉，使得處理流體流動通過來源導管157進入氣體導管192與內部容積115，防止處理流體的流動進入凝結器160。另一方面，當出口隔離閥165開啟時，入口隔離閥155關閉，使得氣態產物從內部容積115移除並流動通過排氣導管163而進入凝結器160，防止氣態產物的流動進入氣體分配盤150。
氣體分配盤150設置以提供在壓力下的處理流體進入來源導管157，用於通過氣體導管192傳送進入內部容積115。如圖3所示，氣體分配盤150包括處理流體入口310、可選的惰性氣體入口320、淨化氣體入口340及共通出口導管357。處理流體入口310流體地連接至流體源(未示出)。流體來源可提供水或其他合適流體，其被加熱成氣相並用於做為處理流體。處理流體入口310藉由導管312、314及隔離閥315流體地連接至蒸發器350。隔離閥315具有第一(即，關閉)狀態，防止來自流體來源的流動進入蒸發器350。隔離閥315具有第二(即，開啟)狀態，容許來自流體來源的流動進入蒸發器350。隔離閥315也被設置或使用帶有質量流量計，以調節流進蒸發器350的處理流體量。蒸發器350設置以將處理流體轉換成氣相。在一實例中，蒸發器350將水轉換成蒸汽。在一實例中，蒸發器350將水轉換成乾燥蒸汽或過熱蒸汽。
蒸發器350藉由導管352流體地連接至共通入口導管354。蒸發器350與共通入口導管354藉由導管332也流體地連接至壓力安全閥330。壓力安全閥330設置以釋放導管352中的過壓力並且為本領域中所習知的。
可選的惰性氣體入口320設置以提供來自壓力控制氣源(未示出)的壓力控制氣體，用於控制傳送通過共通入口導管354的處理流體的壓力。藉由氣源提供的壓力控制氣體可為反應性氣體或惰性氣體，諸如但不限於氮、氬、及類似物、或其他合適氣體。惰性氣體入口320藉由隔離閥325與導管322、324流體地連接至共通入口導管354。隔離閥325具有第一(即，關閉)狀態，防止來自壓力控制氣源的流動通過導管324進入共通入口導管354。隔離閥325具有第二(即，開啟)狀態，容許來自壓力控制氣源的流動通過導管324進入共通入口導管354。隔離閥325也被設置或利用帶有質量流量計，以調節流進共通入口導管354的壓力控制氣體量。
共通入口導管354藉由閥355與導管356流體地連接至共通出口導管357。閥355可設置為隔離閥以將蒸發器350與惰性氣體入口320從流體線路190選擇性地隔離。共通出口導管357流體地連接至來源導管157，來源導管157將氣體分配盤150耦接至入口隔離閥155。在另一實例中，閥355可設置為流量控制閥以選擇性地控制從流體線路190流動進入腔室主體110的內部容積155的蒸發器350與惰性氣體入口320的處理流體量。流量控制閥的實例包括針閥、節流閥、及調變閥，等等。
淨化氣體入口340通過共通出口導管357也耦接至來源導管157。淨化氣體入口340耦接至淨化氣體來源(未示出)。淨化氣體可為惰性氣體，諸如但不限於氮、空氣、氬、及類似物。當期望時，淨化氣體可用於從共通出口導管357與流體線路190移除處理流體的殘留物。淨化氣體入口340藉由隔離閥345流體地連接至共通出口導管357。淨化氣體入口340藉由導管342流體地連接至隔離閥345。隔離閥345設置以將淨化氣體入口340從共通出口導管357選擇性地隔離。隔離閥345藉由導管344流體地連接至共通出口導管357。
在某些具體例中，隔離閥315、325、345及355為關斷閥。藉由控制器180控制隔離閥315、325、345及355的操作。藉由耦接至主體110的壓力感測器114監測導入內部容積115的處理流體之壓力。由於流體線路190連續地耦接至內部容積115，壓力感測器114也可用於測定流體線路190內的壓力。在流體線路190與內部容積115具有安置於其間的隔離閥或其被設置使得預期到壓力的顯著變化的具體例中，流體線路190和內部容積115各自可裝配分開的壓力感測器114。
凝結器160流體地耦接至冷卻流體來源(未示出)並設置以凝結通過氣體導管192離開內部容積115的氣相處理流體。凝結器160中的相變化從內部容積115與流體線路190拉引處理流體，其將淨化氣體的需求最小化。可選地，離開凝結器160的凝結處理流體可經由隔離閥175行經通過熱交換器170。熱交換器170設置以進一步冷卻凝結處理流體，以便可更容易地管控處理流體。凝結器160藉由凝結器導管168流體地耦接至隔離閥175。熱交換器170藉由熱交換器導管172耦接至隔離閥175。泵176藉由泵導管174流體地連接至熱交換器170並將液化處理流體從熱交換器170泵送離開至用於回收、再利用或處置的容器。
一或多個加熱器140安置在主體110之上並設置以加熱批次處理腔室100的主體110。在某些具體例中，加熱器140安置在主體110的外表面112之上，如圖1所示。加熱器140的每一者可為電阻線圈、燈、陶瓷加熱器、石墨基碳纖維複合材料(CFC)加熱器、不鏽鋼加熱器或鋁加熱器。藉由電源145賦能於加熱器140。藉由控制器180透過從溫度感測器116接收的反饋而控制至加熱器140的功率。溫度感測器116耦接至主體110並監測主體110的溫度。在一實例中，加熱器140將主體110維持在高於安置在內部容積155中的處理流體的凝結點的溫度。
一或多個加熱器146安置在主體110中並設置以加熱安置在匣130中且同時在批次處理腔室100的內部容積115中的基板135。加熱器146的每一者可為電阻線圈、燈、陶瓷加熱器、石墨基碳纖維複合材料(CFC)加熱器、不鏽鋼加熱器或鋁加熱器。在圖1描繪的具體例中，加熱器146是電阻加熱器。藉由電源145賦能於加熱器146。藉由控制器180透過從溫度感測器(未示出)接收的反饋而控制至加熱器146的功率。溫度感測器可安置在主體110中並監測內部容積115的溫度。在一實例中，加熱器146可操作以將安置在匣130中且同時在批次處理腔室100的內部容積115的熱處理區102中的基板135維持在高於攝氏300度的溫度，諸如攝氏300度與約450度之間，或甚至諸如攝氏300度與約500度之間。
由於加熱器146通常將內部容積155的熱處理區102維持在顯著地高於流體線路190的溫度之溫度，離開流體線路190進入熱處理區102的乾燥蒸汽變得過熱。過熱乾燥蒸汽將有利地不會冷凝在熱處理區102內，接著防止流體凝結在於處理腔室100內被處理的基板135之上。
耦接至致動器(未示出)的匣130移動進出內部容積115。匣130具有頂表面132、底表面134、及壁136。匣130的壁136具有複數個基板儲存槽138。各基板儲存槽138沿著匣130的壁136均勻地分隔開。各基板儲存槽138設置以固持其中的基板135。匣130可具有多達50個基板儲存槽138用於固持基板135。匣130提供有效載具，用於將複數個基板135傳送進出批次處理腔室100與用於在內部容積115中處理複數個基板135兩者。
控制器180包括中央處理單元(CPU)182、記憶體184、及支持電路186。CPU 182可為可用於工業設定的任何形式的通用電腦處理器。記憶體184可為隨機存取記憶體、唯讀記憶體、軟碟、或硬碟機、或其他形式的數位儲存。支持電路186習知地耦接至CPU 182且可包括快取、時鐘電路、輸入/輸出系統、電源供應器、及類似物。
控制器180控制批次處理腔室100的各種部件的操作。控制器180控制氣體分配盤150、凝結器160、泵176、入口隔離閥155、出口隔離閥165及電源145的操作。控制器180也相通地連接至溫度感測器116、壓力感測器114、冷卻通道124及溫度讀數裝置156與162。控制器180接收輸入選定用於處理基板的處理流體的類型。一旦控制器180接收處理流體的類型，控制器180決定將處理流體維持成氣態狀態的目標壓力與溫度範圍。控制器180使用來自溫度感測器116、151、153、119、167、169與壓力感測器114的資訊以控制加熱器140、152、154、158、196、164與166的操作與提供在內部容積115與流體線路190內的壓力。藉由加熱器供應的受控熱與藉由壓力控制氣體提供的壓力用於將安置在流體線路190與內部容積115中的處理流體維持在高於用於所施加的壓力與溫度的處理流體的凝結點的溫度。控制器180使用來自壓力感測器114的資訊以控制氣體分配盤150中的隔離閥315、325、345與355的操作，以最佳地供應處理流體進入流體線路190並將處理流體維持在小於在所施加的溫度的處理流體的凝結壓力之壓力。因此，維持內部容積115及流體線路190的溫度與壓力，使得處理流體處在氣相。
意於根據用於批次處理腔室100中基板的期望退火的處理要求而選定處理流體。處理流體可包含含氧及/或含氮氣體，諸如氧、蒸汽、水、過氧化氫、及/或氨。替代地或除了含氧及/或含氮氣體之外，處理流體可包含含矽氣體，諸如但不限於有機矽、四烷基正矽酸鹽(tetraalkyl orthosilicate)氣體及二矽氧烷氣體。在某些具體例中，處理流體可為蒸汽或乾燥蒸汽，處在約5巴與約80巴之間的壓力下且溫度可維持在攝氏約150度與攝氏約250度之間或甚至高達攝氏500度。此確保乾燥蒸汽在內部容積115與流體線路190中不凝結成水，且額外地容許乾燥蒸汽變成熱處理區102內的過熱乾燥蒸汽，基板135在熱處理區102中暴露至過熱乾燥蒸汽用於處理。
圖1A為另一批次處理腔室106的一部分的部分剖面視圖，繪示至溫度受控流體線路190 A的連接。批次處理腔室106實質上與上述的批次處理腔室106相同，除了代替如圖1所示將溫度受控流體線路190耦接至凝結器160與氣體分配盤150兩者的單一埠117，圖1A的批次處理腔室106包括將內部容積115耦接至溫度受控流體線路190 A的氣體分配盤150的第一埠117 A，及將內部容積115耦接至溫度受控流體線路190 A的凝結器160的第二埠117 B。
溫度受控流體線路190 A實質上與溫度受控流體線路190完全相同，帶有下標A與B，表示元件耦接至氣體分配盤側(A)與凝結器側(B)。不同於將溫度受控流體線路190內的凝結器160與氣體分配盤150透過共通腔室導管118流體地耦接至腔室主體110的內部容積115的溫度受控流體線路190，溫度受控流體線路190 A將凝結器160與氣體分配盤150流體地隔離，並將凝結器160與氣體分配盤150透過分開的腔室導管118 A,B分開地透過分開的專用埠117 A,B耦接至腔室主體110的內部容積115。
圖2為用於在高溫下單一基板的高壓退火處理的單一基板處理腔室200的簡化前剖面視圖。單一基板處理腔室200具有主體210，帶有外表面212與圍住內部容積215的內表面213。在諸如圖2中的某些具體例，主體210具有環形剖面，然而在其他具體例中，主體210的剖面可為矩形或任何封閉形狀。主體210的外表面212可由抗腐蝕鋼(CRS)製成，諸如但不限於不鏽鋼。一或多個熱屏蔽225安置在主體210的內表面213上，以防止來自單一基板處理腔室200的熱損失至外部環境。主體210的內表面213及熱屏蔽225可由展現高抗腐蝕性的鎳基鋼合金製成，諸如但不限於HASTELLOY ®、ICONEL ®、及MONEL ®。
基板支撐件230安置在內部容積215內。基板支撐件230具有桿234與由桿234支持的基板支撐構件232。桿234通過形成穿過腔室主體210的通道222。連接至致動器238的棒239通過形成穿過腔室主體210的第二通道223。棒239耦接至具有孔洞236的板235，孔洞236容納基板支撐件230的桿234。升舉銷237連接至基板支撐構件232。致動器238致動桿239，使得板235移動向上或向下以與升舉銷237連接與斷開。當升舉銷237被舉升或降低時，基板支撐構件232在腔室200的內部容積215內被舉升或降低。基板支撐構件232具有內嵌於其中央的電阻加熱元件231。電源233設置以電氣地賦能於電阻加熱元件231。藉由控制器280控制電源233與致動器238的操作。
單一基板處理腔室200具有在主體210上的開口211，一或多個基板220透過開口211可被載入或載出安置在內部容積215中的基板支撐件230。開口211形成主體210上的隧道221。狹縫閥228設置以可密封地關閉隧道221，使得僅當狹縫閥228開啟時，可進出開口211與內部容積215。高壓密封227用於將狹縫閥228密封於主體210，以將內部容積215密封用於處理。高壓密封227可由聚合物所製成，例如氟聚合物，諸如但不限於全氟化彈性體與聚四氟乙烯(PTFE)。高壓密封227可進一步包括彈性構件用於偏向密封以改善密封性能。冷卻通道224安置在隧道221上鄰近於高壓密封227，以在處理期間將高壓密封227維持在高壓密封227的最大安全操作溫度之下。來自冷卻流體來源226的冷卻劑(諸如但不限於惰性物、介電質、及高效熱傳流體)可在冷卻通道224內循環。藉由控制器280透過從溫度感測器216或流量計(未示出)接收的反饋而控制來自冷卻流體來源226的冷卻劑的流動。環形熱扼流器229形成環繞隧道221，以當狹縫閥228開啟時，避免來自內部容積215的熱流通過開口211。
單一基板處理腔室200具有通過主體210的埠217，其流體地連接至流體線路290，流體線路290連接氣體分配盤250、凝結器260與埠217。流體線路290具有如流體線路190實質上類似的部件並以如流體線路190實質上類似的方式作用。流體線路290具有氣體導管292、來源導管257、入口隔離閥255、排氣導管263、及出口隔離閥265。一些加熱器296、258、252、254、264、266接合於流體線路290的不同部分。一些溫度感測器251、253、219、267及269也放置在流體線路290的不同部分，以執行溫度量測並發送資訊至控制器280。控制器280使用溫度量測資訊以控制加熱器252、254、258、296、264、及266的操作，使得流體線路290的溫度維持在高於安置在流體線路290與內部容積215中的處理流體的凝結點的溫度。
氣體分配盤250與壓力感測器214本質上及作用實質上類似於氣體分配盤150與壓力感測器114。凝結器260本質上及作用實質上類似於凝結器160。泵270本質上及作用實質上類似於泵176。一或多個加熱器240安置在主體210上並設置以加熱單一基板處理腔室200內的內部容積215。加熱器240也本質上及作用實質上類似於使用在批次處理腔室100中的加熱器140。
控制器280控制單一基板處理腔室200的操作。控制器280控制氣體分配盤250、凝結器260、泵270、入口隔離閥255、出口隔離閥265、電源233與245的操作。控制器280也相通地連接至溫度感測器216、壓力感測器214、致動器238、冷卻流體來源226與溫度讀數裝置256與262。控制器280本質上及作用實質上類似於使用在批次處理腔室100中的控制器180。
批次處理腔室100提供便利處理腔室以執行在高溫下使用在高壓下的處理流體退火一或多個基板的方法。加熱器140被賦能以加熱處理腔室100並將內部容積115維持在高於處理流體的凝結點的溫度。同時，加熱器152、154、158、196、164、及166被賦能以加熱流體線路190。
複數個基板135被載入匣130以放置在批次處理腔室100中。批次處理腔室100的門120開啟且匣130移動進入內部容積115。門120接著關閉以將基板135密封在處理腔室100內。密封122確保一旦門120關閉，沒有來自內部容積115的洩漏。
藉由氣體分配盤150提供處理流體進入界定在處理腔室100內的內部容積115。開啟入口隔離閥155以容許處理流體流動通過來源導管157與氣體導管192進入內部容積115。出口隔離閥165於此時保持關閉。施加於處理流體的壓力可漸增地提高。當足夠量的處理流體存在於內部容積115時，關閉入口隔離閥155。替代地，處理流體可連續地流動通過內部容積115，同時處理基板135。
在處理期間，內部容積115與流體線路190維持在使得處理流體維持在氣相的溫度與壓力下。內部容積115與流體線路190的溫度維持在大於在所施加壓力下的處理流體的凝結點的溫度。內部容積115與流體線路190維持在小於在所施加溫度下的處理流體的凝結壓力的壓力。
當基板135已經透過暴露於在處理條件下的處理流體達到期望效果時而完成處理。出口隔離閥165接著開啟以將處理流體從內部容積115流動通過氣體導管192與排氣導管163進入凝結器160。處理流體在凝結器160中凝結成液相。可選的熱交換器170可進一步冷卻液相處理流體以便於流體的處理。凝結的處理流體接著藉由泵176移除。當凝結的處理流體被移除時，關閉出口隔離閥165。加熱器140、152、154、158、196、164、及166將流體線路內的處理流體維持為氣相，同時出口隔離閥165至凝結器160開啟以防止流體線路內的凝結。批次處理腔室100的門120接著開啟以將基板135從內部容積115移除。
單一基板處理腔室200以實質上相同於批次處理腔室100的方式操作。單一基板處理腔室200用於退火放置在基板支撐件230上的單一基板220。開啟狹縫閥228以載入基板220通過隧道221至內部容積215中的基板支撐件230。加熱器252、254、258、296、264、與266將流體線路內的處理流體保持在氣相，同時處理流體被傳送至內部容積215。
圖4為根據本發明的一具體例的在處理腔室中退火一或多個基板的方法400的方塊圖。方法400開始於方塊410，藉由將一或多個基板載入處理腔室的處理區中。例如，單一基板可載入至安置在單一基板處理腔室中的基板支撐件之上。除此之外，複數個基板可被載入放置進入批次處理腔室的匣上。
在方塊420，處理流體流動通過氣體導管進入單一基板處理腔室或批次處理腔室內的處理區。在某些具體例中，處理流體可為在高壓下的處理流體。單一基板或複數個基板在退火處理期間暴露至高溫下的處理流體。在處理完成之後，處理流體從處理區透過氣體導管而移除並藉由凝結器而凝結成液相。凝結的處理流體隨後藉由泵而移除。
在方塊430，氣體導管中的處理流體保持在高於處理流體的凝結點的溫度。氣體導管耦接至一或多個加熱器，加熱器設置以將流動通過氣體導管的處理流體維持在高於處理流體的凝結點的溫度，使得處理流體維持在氣相。在某些具體例中，加熱器可包含藉由電源賦能的電阻加熱元件。氣體導管具有可操作以量測氣體導管的溫度的一或多個溫度感測器。來自氣體導管的溫度量測被發送至控制器，控制器使用此資訊以控制氣體導管上的加熱器的操作。
選用於處理基板的處理流體的類型輸入至控制器的使用者界面或經由另一通道提供至控制器。控制器使用來自溫度與壓力感測器的資訊以控制接合於流體線路與腔室主體的不同部分的加熱器的操作，並將存在於流體線路與處理區中的處理流體維持在大於感測到的壓力之處理流體的凝結點的溫度。控制器也使用來自耦接至腔室主體的溫度與壓力感測器的資訊以控制處理流體的流動與從氣體分配盤進入流體線路的壓力控制氣體，並將處理流體維持在小於在感測的溫度之處理流體的凝結壓力的壓力。因而維持處理區及流體線路的溫度與壓力，使得處理流體保持在氣相。在一實例中，壓力維持在約5巴與約35巴之間，同時溫度維持在攝氏約150度與攝氏約250度之間，以便處理流體主要地以蒸汽形式保持在氣相。
使用在處理腔室100、200中的流體線路190、290提供控制與維持處理流體的溫度高於流動通過流體線路190、290進入高壓退火腔室的處理流體的凝結點。耦接至流體線路190、290的不同部分的一些加熱器與溫度感測器幫助控制器180、280控制與維持至處理腔室100、200中的流體線路190、290與內部容積115、215的熱供應。因此，防止處理流體的凝結且處理流體維持在氣相。
批次處理腔室100容許複數個基板在同一時間相同條件下批次地退火，因而降低處理各基板的成本。另一方面，單一基板處理腔室200容許更有效率的基板處理，因此提供出色的基板溫度控制於將被退火的各基板。再者，單一基板處理腔室200可容易地與真空群集處理工具整合，因此提供有效率的基板處理與要求用於裝置整合的處理腔室的整合。
儘管前述關於本發明的特定具體例，將理解到這些具體例僅為本發明的原理與應用的例示。因此將理解到可對例示具體例進行許多修飾以達成其他具體例，而不背離本發明的精神與範疇，如藉由隨附申請專利範圍所界定的。
100:批次處理腔室 102:熱處理區 104:冷卻區 106:批次處理腔室 110:主體 112:外表面 113:內表面 114:壓力感測器 115:內部容積 116:溫度感測器 117:埠 118:腔室導管 119:感測器 120:門 122:高壓密封 124:冷卻通道 130:匣 132:頂表面 134:底表面 135:基板 136:壁 138:基板儲存槽 140:加熱器 142:抗對流面板 144:面 145:電源 146:加熱器 150:氣體分配盤 151:感測器 152:加熱器 153:感測器 154:加熱器 155:入口隔離閥 156:溫度讀數裝置 157:來源導管 158:加熱器 159:入口導管 160:凝結器 161:出口導管 162:溫度讀數裝置 163:排氣導管 164:加熱器 165:出口隔離閥 166:加熱器 167:感測器 168:凝結器導管 169:溫度感測器 170:熱交換器 172:熱交換器導管 174:泵導管 175:隔離閥 176:泵 180:控制器 182:CPU 184:記憶體 186:支持電路 190:溫度受控流體線路 192:氣體導管 194:T導管 196:加熱器 200:腔室 210:主體 211:開口 212:外表面 213:內表面 214:壓力感測器 215:內部容積 216:溫度感測器 217:埠 219:溫度感測器 220:基板 221:隧道 222:通道 223:第二通道 224:冷卻通道 225:熱屏蔽 226:冷卻流體來源 227:高壓密封 228:狹縫閥 229:環形熱扼流器 230:基板支撐件 231:電阻加熱元件 232:基板支撐構件 233:電源 234:桿 235:板 236:孔洞 237:升舉銷 238:致動器 239:棒 240:加熱器 245:電源 250:氣體分配盤 251:溫度感測器 252:加熱器 253:溫度感測器 254:加熱器 255:入口隔離閥 256:溫度讀數裝置 257:來源導管 258:加熱器 260:凝結器 262:溫度讀數裝置 263:排氣導管 265:出口隔離閥 267:溫度感測器 270:泵 280:控制器 290:流體線路 292:氣體導管 296:加熱器 310:處理流體入口 312:導管 314:導管 315:隔離閥 320:惰性氣體入口 322:導管 324:導管 325:隔離閥 330:壓力安全閥 332:導管 340:淨化氣體入口 342:導管 344:導管 345:隔離閥 350:蒸發器 352:導管 354:共通入口導管 355:隔離閥 356:導管 357:出口導管 400:方法 410:方塊 420:方塊 430:方塊
藉由參照具體例，某些具體例描繪在隨附圖式中，可得到簡短總結於上的本發明之更明確的說明，本發明的上述特徵以此方式可被詳細地理解。然而，將注意到隨附圖式僅繪示範例具體例且因此不被當作限制本發明的範疇，本發明可容許其他同等有效的具體例。
圖1為用於退火一或多個基板的批次處理腔室的簡化前剖面視圖。
圖1A為批次處理腔室的一部分的部分剖面視圖，其繪示至溫度受控流體線路的連接。
圖2為用於退火單一基板的單一基板處理腔室的簡化前剖面視圖。
圖3為使用在批次處理腔室與單一基板腔室中的氣體分配盤的簡化圖示。
圖4為在處理腔室中退火一或多個基板的方法的方塊圖。
為了易於理解，已經儘可能地使用相同的元件符號指稱圖式中共通的相同元件。意於使一具體例的元件與特徵可有利地結合至其他具體例而不需進一步闡明。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
100:批次處理腔室
102:熱處理區
104:冷卻區
110:主體
112:外表面
113:內表面
114:壓力感測器
115:內部容積
116:溫度感測器
117:埠
118:腔室導管
119:感測器
120:門
122:高壓密封
124:冷卻通道
130:匣
132:頂表面
134:底表面
135:基板
136:壁
138:基板儲存槽
140:加熱器
142:抗對流面板
144:面
146:加熱器
150:氣體分配盤
151:感測器
152:加熱器
153:感測器
154:加熱器
155:入口隔離閥
156:溫度讀數裝置
157:來源導管
158:加熱器
159:入口導管
160:凝結器
161:出口導管
162:溫度讀數裝置
163:排氣導管
164:加熱器
165:出口隔離閥
166:加熱器
167:感測器
168:凝結器導管
169:溫度感測器
170:熱交換器
172:熱交換器導管
174:泵導管
175:隔離閥
176:泵
180:控制器
182:CPU
184:記憶體
186:支持電路
190:溫度受控流體線路
192:氣體導管
194:T導管
196:加熱器

Claims (20)

  1. 一種基板處理腔室，藉由將一內部容積中的一處理流體維持為一過熱乾燥蒸汽而用於在高溫高壓下的退火，該基板處理腔室包含：一腔室主體，圍住該內部容積；一基板支撐件，安置在該內部容積中並設置以支撐一基板；一溫度受控流體線路，設置以將該處理流體遞送至該內部容積；一或多個第一加熱器，與該溫度受控流體線路接合且設置以將該溫度受控流體線路中的該處理流體維持在高於該處理流體的一凝結點的一溫度；及一或多個第二加熱器，與該腔室主體接合且設置以將該內部容積中的該處理流體維持在高於該處理流體的該凝結點的一溫度。
  2. 如請求項1所述之基板處理腔室，進一步包含：一或多個第一溫度感測器，可操作以測量該溫度受控流體線路的一溫度。
  3. 如請求項2所述之基板處理腔室，進一步包含：一或多個第二溫度感測器，可操作以測量該腔室主體的一溫度。
  4. 如請求項1所述之基板處理腔室，進一步包 含：一或多個熱屏蔽，耦接至該腔室主體且安置在該內部容積中。
  5. 如請求項1所述之基板處理腔室，進一步包含：一冷卻通道，安置鄰近於一門，該門設置以可密封地封閉該腔室主體。
  6. 如請求項1所述之基板處理腔室，其中該腔室主體由一鎳基合金所製成。
  7. 如請求項1所述之基板處理腔室，其中該一或多個第二加熱器可操作以將該內部容積維持在高於攝氏300度的一溫度。
  8. 一種基板處理腔室，用於在高溫高壓下的退火，該基板處理腔室包含：一腔室主體，圍住一內部容積；一基板支撐件，安置在該內部容積中並設置以支撐一基板；一溫度受控流體線路，設置以將一處理流體遞送至該內部容積；一或多個加熱器，與該腔室主體接合；一電源，耦接至該一或多個加熱器；及一控制器，相通地連接至該電源且設置以回應資訊而控制該電源以：賦能該一或多個加熱器以將該內部容積中的該處 理流體維持為一過熱乾燥蒸汽。
  9. 如請求項8所述之基板處理腔室，其中該控制器所接收的該資訊是來自以下的一者或多者：一或多個第一溫度感測器，可操作以測量該溫度受控流體線路的一溫度；或一或多個第二溫度感測器，可操作以測量該腔室主體的一溫度。
  10. 如請求項8所述之基板處理腔室，進一步包含：一或多個熱屏蔽，耦接至該腔室主體且安置在該內部容積中。
  11. 如請求項8所述之基板處理腔室，進一步包含：一冷卻通道，安置鄰近於一門，該門設置以可密封地封閉該腔室主體。
  12. 如請求項8所述之基板處理腔室，其中該控制器設置以回應於該資訊而控制該電源，以賦能該一或多個加熱器而將該內部容積維持在高於攝氏300度的一溫度。
  13. 如請求項8所述之基板處理腔室，進一步包含一或多個加熱器，與該溫度受控流體線路接合且耦接至該電源，其中該控制器設置以回應該資訊而控制該電源，以賦能與該溫度受控流體線路接合的該一或多個加熱器，而將該溫度受控流體線路中的該處理流體維持在 高於該處理流體的一凝結點的一溫度。
  14. 如請求項13所述之基板處理腔室，其中該控制器設置以回應該資訊而控制該電源，以賦能與該溫度受控流體線路接合的該一或多個加熱器，而將該溫度受控流體線路中的該處理流體維持為一乾燥蒸汽。
  15. 一種基板處理腔室，藉由將一內部容積中的一處理流體維持為一過熱乾燥蒸汽而用於在高溫高壓下的退火，該基板處理腔室包含：一腔室主體，圍住該內部容積；一基板支撐件，安置在該內部容積中並設置以支撐一基板；一溫度受控流體線路，設置以將該處理流體遞送至該內部容積；及一凝結器，流體地連接至該內部容積並設置以凝結該處理流體。
  16. 如請求項15所述之基板處理腔室，進一步包含：一或多個第一加熱器，與該溫度受控流體線路接合且設置以將該溫度受控流體線路中的該處理流體維持在高於該處理流體的一凝結點的一溫度。
  17. 如請求項16所述之基板處理腔室，進一步包含：一或多個第二加熱器，與該腔室主體接合且設置以將該內部容積中的該處理流體維持在高於該處理流體的該 凝結點的一溫度。
  18. 如請求項17所述之基板處理腔室，其中該一或多個第二加熱器可操作以將該內部容積維持在高於攝氏300度的一溫度。
  19. 如請求項15所述之基板處理腔室，進一步包含：一或多個熱屏蔽，耦接至該腔室主體且安置在該內部容積中。
  20. 如請求項15所述之基板處理腔室，其中該凝結器透過該溫度受控流體線路而流體地連接至該內部容積。
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