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TW345728B - Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting - Google Patents

Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting

Info

Publication number
TW345728B
TW345728B TW084107164A TW84107164A TW345728B TW 345728 B TW345728 B TW 345728B TW 084107164 A TW084107164 A TW 084107164A TW 84107164 A TW84107164 A TW 84107164A TW 345728 B TW345728 B TW 345728B
Authority
TW
Taiwan
Prior art keywords
semiconductor
surface mounting
semiconductor device
slice
manufacturing
Prior art date
Application number
TW084107164A
Other languages
English (en)
Inventor
Dekker Ronald
Godefridus Rafael Ma Henricus
Pieter Johannes Gerar Martinus
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW345728B publication Critical patent/TW345728B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW084107164A 1994-07-26 1995-07-11 Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting TW345728B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94202182 1994-07-26

Publications (1)

Publication Number Publication Date
TW345728B true TW345728B (en) 1998-11-21

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Family Applications (1)

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TW084107164A TW345728B (en) 1994-07-26 1995-07-11 Method of manufacturing a semiconductor device for surface mounting, and semiconductor device for surface mounting

Country Status (7)

Country Link
US (1) US5753537A (zh)
EP (2) EP0721661B1 (zh)
KR (1) KR100380701B1 (zh)
AT (2) ATE350765T1 (zh)
DE (2) DE69528515T2 (zh)
TW (1) TW345728B (zh)
WO (1) WO1996003772A2 (zh)

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DE69615792T2 (de) * 1995-05-10 2002-05-23 Koninklijke Philips Electronics N.V., Eindhoven Miniatur-halbleiteranordnung für oberflächenmontage
EP0860876A3 (de) * 1997-02-21 1999-09-22 DaimlerChrysler AG Anordnung und Verfahren zur Herstellung von CSP-Gehäusen für elektrische Bauteile
KR100390897B1 (ko) * 1997-12-29 2003-08-19 주식회사 하이닉스반도체 칩 크기 패키지의 제조방법
DE19818036B4 (de) * 1998-04-22 2005-05-19 Siemens Ag Verfahren zur Herstellung eines elektrotechnischen Bauteils mit einer kunststoffpassivierten Oberfläche, derartiges Bauteil und Anwendung dieses Bauteils
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치
US6429036B1 (en) * 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
EP1116277A1 (en) 1999-06-03 2001-07-18 Koninklijke Philips Electronics N.V. Connection arrangement for a semiconductor device and method of manufacturing same
WO2001004956A1 (en) * 1999-07-10 2001-01-18 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing same
US6538328B1 (en) * 1999-11-10 2003-03-25 Em Microelectronic Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant
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EP1251557A3 (en) 2003-04-09
EP1251557B1 (en) 2007-01-03
DE69535361D1 (de) 2007-02-15
ATE225985T1 (de) 2002-10-15
KR960705353A (ko) 1996-10-09
US5753537A (en) 1998-05-19
DE69528515D1 (de) 2002-11-14
WO1996003772A2 (en) 1996-02-08
EP0721661B1 (en) 2002-10-09
ATE350765T1 (de) 2007-01-15
DE69528515T2 (de) 2003-04-24
EP1251557A2 (en) 2002-10-23
KR100380701B1 (ko) 2003-07-22
WO1996003772A3 (en) 1996-04-18
DE69535361T2 (de) 2007-10-04
EP0721661A1 (en) 1996-07-17

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