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SG146642A1 - Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film - Google Patents

Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film

Info

Publication number
SG146642A1
SG146642A1 SG200806863-7A SG2008068637A SG146642A1 SG 146642 A1 SG146642 A1 SG 146642A1 SG 2008068637 A SG2008068637 A SG 2008068637A SG 146642 A1 SG146642 A1 SG 146642A1
Authority
SG
Singapore
Prior art keywords
change film
phase
forming
sputtering target
volatile memory
Prior art date
Application number
SG200806863-7A
Other languages
English (en)
Inventor
Sohei Nonaka
Kei Kinoshita
Satoru Mori
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG146642A1 publication Critical patent/SG146642A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
SG200806863-7A 2003-09-17 2004-09-08 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film SG146642A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003324063 2003-09-17
JP2004102724A JP4766441B2 (ja) 2003-09-17 2004-03-31 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット

Publications (1)

Publication Number Publication Date
SG146642A1 true SG146642A1 (en) 2008-10-30

Family

ID=34380303

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200806863-7A SG146642A1 (en) 2003-09-17 2004-09-08 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film
SG200806862-9A SG146641A1 (en) 2003-09-17 2004-09-08 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200806862-9A SG146641A1 (en) 2003-09-17 2004-09-08 Phase-change film for semiconductor non-volatile memory and sputtering target for forming such phase-change film

Country Status (7)

Country Link
US (1) US20070053786A1 (ja)
EP (1) EP1667230A4 (ja)
JP (1) JP4766441B2 (ja)
KR (1) KR20060073961A (ja)
SG (2) SG146642A1 (ja)
TW (1) TW200527654A (ja)
WO (1) WO2005029585A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4061557B2 (ja) * 2005-07-11 2008-03-19 三菱マテリアル株式会社 相変化膜形成用スパッタリングターゲットおよびその製造方法。
WO2007057972A1 (ja) * 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
GB2433647B (en) 2005-12-20 2008-05-28 Univ Southampton Phase change memory materials, devices and methods
US8319204B2 (en) * 2006-07-21 2012-11-27 Renesas Electronics Corporation Semiconductor device
KR100829601B1 (ko) * 2006-09-27 2008-05-14 삼성전자주식회사 칼코겐 화합물 타겟, 이의 제조 방법 및 상변화 메모리장치의 제조 방법
KR100871692B1 (ko) 2006-11-07 2008-12-08 삼성전자주식회사 저온 증착용 금속 전구체, 그를 사용한 금속 박막 형성방법 및 상변화 메모리 소자 제조 방법
EP2109142A4 (en) * 2007-01-25 2010-07-28 Ulvac Inc METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT
JP4764858B2 (ja) * 2007-01-30 2011-09-07 株式会社リコー 光記録媒体、スパッタリングターゲット及びその製造方法
JP5088036B2 (ja) * 2007-08-06 2012-12-05 ソニー株式会社 記憶素子および記憶装置
JP5377142B2 (ja) 2009-07-28 2013-12-25 ソニー株式会社 ターゲットの製造方法、メモリの製造方法
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
US9257643B2 (en) * 2013-08-16 2016-02-09 International Business Machines Corporation Phase change memory cell with improved phase change material
CN104655711A (zh) * 2013-11-18 2015-05-27 中国电子科技集团公司第十八研究所 高压氢镍蓄电池漏率定量测试方法
US9917252B2 (en) * 2015-06-19 2018-03-13 Macronix International Co., Ltd. GaSbGe phase change memory materials
WO2020105676A1 (ja) * 2018-11-20 2020-05-28 三菱マテリアル株式会社 スパッタリングターゲット
JP2020132996A (ja) 2019-02-20 2020-08-31 三菱マテリアル株式会社 スパッタリングターゲット

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7666A (en) * 1850-09-24 harris
JPH08127176A (ja) * 1994-10-31 1996-05-21 Hitachi Ltd 情報記録用薄膜およびその製造方法、ならびに情報記録媒体およびその使用方法
JP2001167475A (ja) * 1999-01-28 2001-06-22 Toray Ind Inc 光記録媒体
KR100491049B1 (ko) * 1999-03-15 2005-05-24 마쯔시다덴기산교 가부시키가이샤 정보기록매체와 그 제조방법
US6632583B2 (en) * 1999-12-07 2003-10-14 Mitsubishi Chemical Corporation Optical recording medium and production method of the same
JP4911845B2 (ja) * 2001-09-20 2012-04-04 株式会社リコー 相変化型不揮発性メモリ素子、該相変化型不揮発性メモリ素子を用いたメモリアレーおよび該相変化型不揮発性メモリ素子の情報記録方法
EP1318552A1 (en) * 2001-12-05 2003-06-11 STMicroelectronics S.r.l. Small area contact region, high efficiency phase change memory cell and fabrication method thereof

Also Published As

Publication number Publication date
KR20060073961A (ko) 2006-06-29
WO2005029585A1 (ja) 2005-03-31
TW200527654A (en) 2005-08-16
EP1667230A4 (en) 2007-12-12
SG146641A1 (en) 2008-10-30
JP2005117002A (ja) 2005-04-28
US20070053786A1 (en) 2007-03-08
JP4766441B2 (ja) 2011-09-07
EP1667230A1 (en) 2006-06-07

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