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KR950011019B1 - Power transistor device and its making method - Google Patents

Power transistor device and its making method Download PDF

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Publication number
KR950011019B1
KR950011019B1 KR91007564A KR910007564A KR950011019B1 KR 950011019 B1 KR950011019 B1 KR 950011019B1 KR 91007564 A KR91007564 A KR 91007564A KR 910007564 A KR910007564 A KR 910007564A KR 950011019 B1 KR950011019 B1 KR 950011019B1
Authority
KR
South Korea
Prior art keywords
power transistor
transistor device
making method
making
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR91007564A
Other languages
English (en)
Other versions
KR910020923A (ko
Inventor
Perii Merrill
Herbert J Gould
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of KR910020923A publication Critical patent/KR910020923A/ko
Application granted granted Critical
Publication of KR950011019B1 publication Critical patent/KR950011019B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/491—Vertical IGBTs having both emitter contacts and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
KR91007564A 1990-05-09 1991-05-09 Power transistor device and its making method Expired - Lifetime KR950011019B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52117790A 1990-05-09 1990-05-09
US521177 1990-05-09

Publications (2)

Publication Number Publication Date
KR910020923A KR910020923A (ko) 1991-12-20
KR950011019B1 true KR950011019B1 (en) 1995-09-27

Family

ID=24075680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR91007564A Expired - Lifetime KR950011019B1 (en) 1990-05-09 1991-05-09 Power transistor device and its making method

Country Status (9)

Country Link
US (2) US5661314A (ko)
JP (1) JP3004077B2 (ko)
KR (1) KR950011019B1 (ko)
AT (1) AT404525B (ko)
CA (1) CA2042069A1 (ko)
DE (1) DE4114174A1 (ko)
FR (1) FR2662025A1 (ko)
GB (1) GB2243952B (ko)
IT (1) IT1247293B (ko)

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US6072216A (en) * 1998-05-01 2000-06-06 Siliconix Incorporated Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
US6677626B1 (en) * 1998-11-11 2004-01-13 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
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US6137139A (en) * 1999-06-03 2000-10-24 Intersil Corporation Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery
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JP4169879B2 (ja) 1999-08-20 2008-10-22 新電元工業株式会社 高耐圧トランジスタ
US6246090B1 (en) 2000-03-14 2001-06-12 Intersil Corporation Power trench transistor device source region formation using silicon spacer
US8314002B2 (en) * 2000-05-05 2012-11-20 International Rectifier Corporation Semiconductor device having increased switching speed
US7485920B2 (en) * 2000-06-14 2009-02-03 International Rectifier Corporation Process to create buried heavy metal at selected depth
US6781194B2 (en) * 2001-04-11 2004-08-24 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
US6784486B2 (en) * 2000-06-23 2004-08-31 Silicon Semiconductor Corporation Vertical power devices having retrograded-doped transition regions therein
US6333253B1 (en) * 2000-08-24 2001-12-25 Advanced Micro Devices, Inc. Pattern-block flux deposition
US6635926B2 (en) 2000-08-30 2003-10-21 Shindengen Electric Manufacturing Co., Ltd. Field effect transistor with high withstand voltage and low resistance
AU2002210353A1 (en) * 2000-09-15 2002-03-26 Hacker Automation Method and device for applying fluid substances
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JP2002246595A (ja) * 2001-02-19 2002-08-30 Shindengen Electric Mfg Co Ltd トランジスタ
JP4198469B2 (ja) * 2001-04-11 2008-12-17 シリコン・セミコンダクター・コーポレイション パワーデバイスとその製造方法
JP5023423B2 (ja) * 2001-09-27 2012-09-12 サンケン電気株式会社 縦型絶縁ゲート型電界効果トランジスタおよびその製造方法
US6781203B2 (en) * 2001-11-09 2004-08-24 International Rectifier Corporation MOSFET with reduced threshold voltage and on resistance and process for its manufacture
JP3973934B2 (ja) * 2002-03-15 2007-09-12 株式会社東芝 高耐圧半導体装置
DE10330571B8 (de) * 2003-07-07 2007-03-08 Infineon Technologies Ag Vertikale Leistungshalbleiterbauelemente mit Injektionsdämpfungsmittel im Rand bereich und Herstellungsverfahren dafür
US7180152B2 (en) 2004-07-08 2007-02-20 International Rectifier Corporation Process for resurf diffusion for high voltage MOSFET
KR100722909B1 (ko) * 2005-08-30 2007-05-30 닛산 지도우샤 가부시키가이샤 반도체 장치
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
US7956419B2 (en) * 2005-11-02 2011-06-07 International Rectifier Corporation Trench IGBT with depletion stop layer
CN103890953B (zh) * 2012-03-23 2016-10-19 松下知识产权经营株式会社 半导体元件
JP6024751B2 (ja) * 2012-07-18 2016-11-16 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112013002031T5 (de) 2012-08-22 2015-03-12 Fuji Electric Co., Ltd. Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren
US9263271B2 (en) * 2012-10-25 2016-02-16 Infineon Technologies Ag Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
US9530844B2 (en) 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US9331197B2 (en) 2013-08-08 2016-05-03 Cree, Inc. Vertical power transistor device
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
CN104517837B (zh) * 2013-09-29 2017-10-10 无锡华润上华科技有限公司 一种绝缘栅双极型晶体管的制造方法
US20150263145A1 (en) * 2014-03-14 2015-09-17 Cree, Inc. Igbt structure for wide band-gap semiconductor materials
US9337284B2 (en) * 2014-04-07 2016-05-10 Alpha And Omega Semiconductor Incorporated Closed cell lateral MOSFET using silicide source and body regions
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
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JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
DE102016015475B3 (de) * 2016-12-28 2018-01-11 3-5 Power Electronics GmbH IGBT Halbleiterstruktur
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness

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Also Published As

Publication number Publication date
CA2042069A1 (en) 1991-11-10
US5904510A (en) 1999-05-18
GB2243952A (en) 1991-11-13
DE4114174A1 (de) 1991-11-14
JPH04229660A (ja) 1992-08-19
ITMI911121A0 (it) 1991-04-23
GB9110071D0 (en) 1991-07-03
US5661314A (en) 1997-08-26
FR2662025A1 (fr) 1991-11-15
ATA95691A (de) 1998-04-15
GB2243952B (en) 1994-08-17
AT404525B (de) 1998-12-28
IT1247293B (it) 1994-12-12
ITMI911121A1 (it) 1992-10-23
JP3004077B2 (ja) 2000-01-31
KR910020923A (ko) 1991-12-20

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E902 Notification of reason for refusal
G160 Decision to publish patent application
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FPAY Annual fee payment

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