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KR900015266A - 화학증착법 - Google Patents

화학증착법 Download PDF

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Publication number
KR900015266A
KR900015266A KR1019900003258A KR900003258A KR900015266A KR 900015266 A KR900015266 A KR 900015266A KR 1019900003258 A KR1019900003258 A KR 1019900003258A KR 900003258 A KR900003258 A KR 900003258A KR 900015266 A KR900015266 A KR 900015266A
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KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
layer
deposition method
chamber
Prior art date
Application number
KR1019900003258A
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English (en)
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KR940011741B1 (ko
Inventor
아쓰히로 쓰꾸네
겐지 고오야마
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR900015266A publication Critical patent/KR900015266A/ko
Application granted granted Critical
Publication of KR940011741B1 publication Critical patent/KR940011741B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

내용 없음.

Description

화학증착법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 CVD 방법을 시행하는데 사용되는 플라즈마 CVD 장치를 도시하는 다이어그램,
제3도는 본 발명에 따른 CVD 방법의 두번째 실시예에 의해 형성된 SiO2층에 대해 행해진 SIMS의 분석결과의 그래프,
제4도는 본 발명에 따른 CVD 방법의 두번째 실시예에 의해 형성된 FSG층에 대해 행해진 SIMS의 분석결과의 그래프.

Claims (7)

  1. 플루오르를 포함하는 가스를 사용하여 체임버(2)내에 플라즈마 셀프-클리닝을 행하는 단계를 포함하는 화학증착법에 있어서, 실리콘 및 질소를 포함하는 물질의 제1층에 의해 체임버(2)의 내부를 피복하는 단계, 그리고 화학증착법에 의해 체임버의 내부의 소정 표면상에 제2층을 형성하는 단계가 더 제공되며, 상기 제2층은 상기 제1층에 포함된 질소의 양보다 적은 양의 질소를 포함하는 물질로 만들어지는 것을 특징으로 하는 화학증착법.
  2. 제1항에 있어서, 플라즈마 셀프-클리닝을 시행하는 단계가 NF3가스를 사용하는 것을 특징으로 하는 화학증착법.
  3. 제1항 또는 제2항에 있어서, 체임버(2)의 내부를 피복하는 상기 단계가 SiON, SiN 및 SiBN을 포함하는 물질의 군으로부터 선택된 물질로 만들어진 제1층을 피복하는 것을 특징으로 하는 화학증착법.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 제2층을 형성하는 상기 단계가 이산화규소(SiO2)및 포스포-실리케이트 글래스(PSG)를 포함하는 물질의 군으로부터 선택된 물질로부터 제2층을 형성하는 것을 특징으로 하는 화학증착법.
  5. 제4항에 있어서, 상기 소정의 표면이 규소(Si)로 만들어지는 것을 특징으로 하는 화학증착법.
  6. 제1항 내지 제5항중 어느 한 항에 있어서 체임버(2)의 내부를 피복하는 상기 단계가 제1층을 적어도 약 1000Å의 두께로 피복하는 것을 특징으로 하는 화학증착법.
  7. 제1항에 있어서, 상기 제2층이 질소를 포함하지 않는 물질로 만들어지는 것을 특징으로 하는 화학증착법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003258A 1989-03-14 1990-03-12 화학증착법 KR940011741B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-61508 1989-03-14
JP1061508A JP2708533B2 (ja) 1989-03-14 1989-03-14 Ｃｖｄ装置の残留ガス除去方法

Publications (2)

Publication Number Publication Date
KR900015266A true KR900015266A (ko) 1990-10-26
KR940011741B1 KR940011741B1 (ko) 1994-12-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003258A KR940011741B1 (ko) 1989-03-14 1990-03-12 화학증착법

Country Status (5)

Country Link
US (1) US5041311A (ko)
EP (1) EP0387656B1 (ko)
JP (1) JP2708533B2 (ko)
KR (1) KR940011741B1 (ko)
DE (1) DE69004715D1 (ko)

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CN103219226B (zh) * 2013-04-09 2015-12-02 上海华力微电子有限公司 降低在沉积非晶碳膜时晶圆背面金属污染的方法
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Also Published As

Publication number Publication date
EP0387656A1 (en) 1990-09-19
US5041311A (en) 1991-08-20
EP0387656B1 (en) 1993-11-24
DE69004715D1 (de) 1994-01-05
JP2708533B2 (ja) 1998-02-04
KR940011741B1 (ko) 1994-12-23
JPH02240267A (ja) 1990-09-25

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