KR920021630A - 하이드로겐 실세스퀴옥산 수지의 증기상 증착 - Google Patents
하이드로겐 실세스퀴옥산 수지의 증기상 증착 Download PDFInfo
- Publication number
- KR920021630A KR920021630A KR1019920008971A KR920008971A KR920021630A KR 920021630 A KR920021630 A KR 920021630A KR 1019920008971 A KR1019920008971 A KR 1019920008971A KR 920008971 A KR920008971 A KR 920008971A KR 920021630 A KR920021630 A KR 920021630A
- Authority
- KR
- South Korea
- Prior art keywords
- coating
- silicon
- hydrogen silsesquioxane
- vapor phase
- hydrogen
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Silicon Polymers (AREA)
- Physical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 하이드로겐 실세스퀴옥산을 포함하는 가스를 기질을 함유하는 증착 챔버내로 도입시키고; 하이드로겐 실세스 퀴옥산의 반응을 유도시켜 피복물을 형성시킴을 특징으로 하여, 실리콘 및 사소를 함유하는 피복물을 기질 위에 증착시키는 방법.
- 제1항에 있어서, 하이드로겐 실세스퀴옥산을 담체 가스 속에서 희석시키는 방법.
- 제1항에 있어서, SiO2피복물, SiO2/개질 세라믹 옥사이드층, 실리콘 함유 피복물, 실리콘 탄소 함유 피복물, 실리콘 질소 함유 피복물, 실리콘 질소 탄소 함유 피복물, 실리콘 산소 질소 함유 피복물 및 다이아몬드 유사탄소 피복물로 이루어진 그룹으로부터 선택된 피복물을 피복된 기질위에 적용시킴을 추가로 포함하는 방법.
- 표본의 약 75% 이상의 분자량이 약 2000 미만인 하이드로겐 실세스퀴옥산을 포함하는 조성물.
- 담체 가스속에서 희석시킨 제4항의 하이드로겐 실세스퀴옥산.※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/706,464 | 1991-05-28 | ||
US7/706,464 | 1991-05-28 | ||
US07/706,464 US5165955A (en) | 1991-05-28 | 1991-05-28 | Method of depositing a coating containing silicon and oxygen |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920021630A true KR920021630A (ko) | 1992-12-18 |
KR100196961B1 KR100196961B1 (ko) | 1999-06-15 |
Family
ID=24837691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920008971A KR100196961B1 (ko) | 1991-05-28 | 1992-05-27 | 하이드로겐 실세스퀴옥산 수지의 기상 증착법 |
Country Status (7)
Country | Link |
---|---|
US (2) | US5165955A (ko) |
EP (2) | EP0516308B1 (ko) |
JP (1) | JP3311777B2 (ko) |
KR (1) | KR100196961B1 (ko) |
CA (1) | CA2068353A1 (ko) |
DE (2) | DE69226377T2 (ko) |
ES (2) | ES2090514T3 (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5593727A (en) * | 1991-03-12 | 1997-01-14 | Virginia Tech Intellectual Properties, Inc. | Production of films of SiO2 by chemical vapor deposition |
US5310583A (en) * | 1992-11-02 | 1994-05-10 | Dow Corning Corporation | Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide |
JP3153367B2 (ja) * | 1992-11-24 | 2001-04-09 | ダウ・コ−ニング・コ−ポレ−ション | ポリハイドロジェンシルセスキオキサンの分子量分別方法 |
CH687613A5 (de) * | 1994-02-04 | 1997-01-15 | Tetra Pak Suisse Sa | Verfahren zum Versehen einer Verpackung mit hervorragenden Sperreigenschaften. |
CH687614A5 (de) * | 1994-02-04 | 1997-01-15 | Tetra Pak Suisse Sa | Verfahren zum Versehen einer Verpackung mit hervorragenden Sperreigenschaften in bezug auf Gase. |
US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
JPH08153784A (ja) * | 1994-11-28 | 1996-06-11 | Nec Corp | 半導体装置の製造方法 |
FR2733758B1 (fr) * | 1995-05-04 | 1997-07-18 | Stelumi Sa | Procede et traitement d'un element de conditionnement, notamment a usage medical ou pharmaceutique ; element de conditionnement ainsi traite |
US5858544A (en) * | 1995-12-15 | 1999-01-12 | Univ Michigan | Spherosiloxane coatings |
EP0860462A3 (en) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Composition and method for the formation of silica thin films |
US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
US6143855A (en) | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
EP0978324B1 (en) * | 1998-08-04 | 2005-03-30 | Dow Corning France S.A. | Process for coating surfaces to enhance their biocompatibility |
US6156743A (en) * | 1999-10-18 | 2000-12-05 | Whitcomb; John E. | Method of decreasing fatigue |
US6440550B1 (en) * | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6936537B2 (en) * | 2001-06-19 | 2005-08-30 | The Boc Group, Inc. | Methods for forming low-k dielectric films |
US6881445B1 (en) * | 2001-10-29 | 2005-04-19 | Innovation Chemical Technologies, Ltd. | Forming thin films on substrates using a porous carrier |
EP1506327A1 (en) * | 2002-05-23 | 2005-02-16 | Universit de Sherbrooke | Ceramic thin film on various substrates, and process for producing same |
US7866343B2 (en) | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US7866342B2 (en) | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
TW200527536A (en) | 2004-02-13 | 2005-08-16 | Matsushita Electric Ind Co Ltd | Method for forming organic/inorganic hybrid insulation film |
US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615272A (en) * | 1968-11-04 | 1971-10-26 | Dow Corning | Condensed soluble hydrogensilsesquioxane resin |
US4898907A (en) * | 1986-12-03 | 1990-02-06 | Dow Corning Corporation | Compositions of platinum and rhodium catalyst in combination with hydrogen silsesquioxane resin |
US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4808653A (en) * | 1986-12-04 | 1989-02-28 | Dow Corning Corporation | Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors |
-
1991
- 1991-05-28 US US07/706,464 patent/US5165955A/en not_active Expired - Lifetime
-
1992
- 1992-04-27 US US07/874,169 patent/US5279661A/en not_active Expired - Lifetime
- 1992-05-11 CA CA002068353A patent/CA2068353A1/en not_active Abandoned
- 1992-05-12 DE DE69226377T patent/DE69226377T2/de not_active Expired - Fee Related
- 1992-05-12 DE DE69211425T patent/DE69211425T2/de not_active Expired - Fee Related
- 1992-05-12 EP EP92304290A patent/EP0516308B1/en not_active Expired - Lifetime
- 1992-05-12 EP EP95103705A patent/EP0659904B1/en not_active Expired - Lifetime
- 1992-05-12 ES ES92304290T patent/ES2090514T3/es not_active Expired - Lifetime
- 1992-05-12 ES ES95103705T patent/ES2122365T3/es not_active Expired - Lifetime
- 1992-05-25 JP JP13209192A patent/JP3311777B2/ja not_active Expired - Fee Related
- 1992-05-27 KR KR1019920008971A patent/KR100196961B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
ES2122365T3 (es) | 1998-12-16 |
EP0659904B1 (en) | 1998-07-22 |
US5165955A (en) | 1992-11-24 |
EP0659904A3 (en) | 1995-12-06 |
DE69211425D1 (de) | 1996-07-18 |
JP3311777B2 (ja) | 2002-08-05 |
DE69211425T2 (de) | 1996-12-19 |
DE69226377D1 (de) | 1998-08-27 |
ES2090514T3 (es) | 1996-10-16 |
DE69226377T2 (de) | 1999-03-04 |
CA2068353A1 (en) | 1992-11-29 |
EP0516308A1 (en) | 1992-12-02 |
KR100196961B1 (ko) | 1999-06-15 |
JPH05186213A (ja) | 1993-07-27 |
US5279661A (en) | 1994-01-18 |
EP0516308B1 (en) | 1996-06-12 |
EP0659904A2 (en) | 1995-06-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920021630A (ko) | 하이드로겐 실세스퀴옥산 수지의 증기상 증착 | |
KR930006860A (ko) | 유기디실란 소오스를 사용하여 lpcvd에 의해 100°c 정도의 저온에서 이산화 규소막을 증착하는 방법 | |
KR890016627A (ko) | 세라믹 피복물을 기판위에 형성하는 방법 | |
RU92004436A (ru) | Способ пассивации внутренней поверхности осаждением керамического покрытия на устройство, подвергаемое закоксовыванию, устройство, обработанное таким образом, и способ применения устройства | |
KR950032541A (ko) | 보호 피복물을 전자 기판에 형성시키는 방법 | |
MX170794B (es) | Metodo de deposicion de oxido de silicio mejorada con plasma | |
ES2010233A6 (es) | Revestimientos ceramicos, metodo para su produccion y dispositivos electronicos asi revestidos. . | |
ES2005468A6 (es) | Procedimiento para formar sobre un sustrato un revestimiento de capas multiples del tipo de ceramica o parecido. | |
KR940016575A (ko) | 산화실리콘 막 형성 방법 | |
EP0935283A3 (en) | Silicone polymer insulation film on semiconductor substrate and method for forming the film | |
KR940014264A (ko) | 산화실리콘막 형성방법 | |
ES2010234A6 (es) | Revestimientos ceramicos, procedimiento para su produccion y dispositivos electronicos asi revestidos. | |
KR910005397A (ko) | 반도체 웨이퍼 상에 텅스텐 층을 cvd 증착시키는 방법 | |
KR960017936A (ko) | 불소 처리된 실리콘 산화물의 제조 방법 | |
MX9707963A (es) | Metodo de cvd de microondas para deposicion de recubrimientos de barrera, robustos. | |
KR940019814A (ko) | 실라잔 중합체로부터 유도된 실리카 피복물을 전자기판 위에 부착시키는 방법 | |
DK0622474T3 (da) | Fremgangsmåde til fremstilling af et siliciumoxidlag på et fast substrat i bevægelse | |
KR950008432A (ko) | Si-O 함유 피막의 형성방법 | |
KR920010757A (ko) | 텅스텐 헥사플루오라이드, 유기하이드로실란 및 수소의 혼합물로부터 텅스텐막을 증착시키는 방법 | |
KR860002589A (ko) | 전이 금속 질화물 박막 기착법 | |
KR950703073A (ko) | 결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride) | |
KR970027019A (ko) | 전자장치 보호용 피복물 | |
JP2003049261A (ja) | 基板上にガス/液体不透過層を形成する方法 | |
KR850007614A (ko) | 마이크로 웨이브 플라즈마 코팅 및 코팅된 공구 | |
KR900015363A (ko) | 초전도체를 보호피복하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040205 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |