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KR870003678A - 고열전도성 세라믹스 기판 - Google Patents

고열전도성 세라믹스 기판 Download PDF

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Publication number
KR870003678A
KR870003678A KR1019860007670A KR860007670A KR870003678A KR 870003678 A KR870003678 A KR 870003678A KR 1019860007670 A KR1019860007670 A KR 1019860007670A KR 860007670 A KR860007670 A KR 860007670A KR 870003678 A KR870003678 A KR 870003678A
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South Korea
Prior art keywords
thermal conductivity
high thermal
ceramic substrate
substrate according
ceramics
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KR1019860007670A
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English (en)
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KR900001838B1 (ko
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순이찌로오 다나까
아끼오 사야노
히로유끼 이시즈까
야스유끼 스기우라
Original Assignee
와다리 스기이찌로오
가부시끼가이샤 도시바
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Publication of KR870003678A publication Critical patent/KR870003678A/ko
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Publication of KR900001838B1 publication Critical patent/KR900001838B1/ko

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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5177—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal characterised by the non-metallic part of the metallising composition
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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Abstract

내용 없음

Description

고열전도성 세라믹스 기판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 내지 제2도는 본 발명의 고열전도성 세라믹스 기판에 도전회로를 형성하는 공정을 나타내는 단면도이다.
제5도는 본 발명의 고열 전도성 세라믹스기판에 따른 반도체장치를 나타낸 도면.
* 도면의 주요부분에 대한 부호의 설명
1 : 세라믹스 기판 2 : 도전성 피막 3 : 레지스터(resist) 4 : 도전회로
11, 21 : 세라믹스 기판 14, 26 : 트랜지스터립 16, 28 : 베이스 메탈(base metal) 24 :

Claims (8)

  1. 세라믹스 기판위에 전도성 피막이 형성된 고열전도성 세라믹스 기판에 있어서, 전술한 기판위에 텅스텐 및 /또는 몰리브덴과 IVa족 천이 금속의 질화물과의 혼합체를 주체로 하는 도전성 피막이 형성되어 있는 것을 특징으로 하는 고열전도성 세라믹스기판.
  2. 제1항에 있어서, 전도성 피막이 전해연마 및/또는 화학연마에 의해서 패러닝 되어서 회로가 형성되어 있는 것을 특징으로 하는 고열전도성 세라믹스기판.
  3. 제1항 또는 제2항에 있어서, 도전성 피막위에 금속피막이 형성되어 있는 것을 특징으로 하는 고열전도성 세라믹스기판.
  4. 제1항에 있어서, 도전성 피막이 텅스텐 및/또는 몰리브덴과 IVa 족 천이 금속의 질화물 양자를 합쳐서 50%이상 포함하며 또한 양자를 각각 2몰%이상 포함하는 것을 특징으로 하는 고열전도성 세라믹스 기판.
  5. 제4항에 있어서, 도전성 피막이 몰리브덴과 질화티탄과의 혼합물을 주제로 하는 것을 특징으로 하는 고열전도성 세라믹스기판.
  6. 제1항에 있어서, 세라믹스 기판이 비산화물 계통의 세라믹스로 된 것을 특징으로 하는 고열전도성 세라믹스기판.
  7. 제6항에 있어서, 비산화물계통의 세라믹스가 질화물 계통의 세라믹스로 된 것을 특징으로 하는 고열전도성 세라믹스기판.
  8. 제7항에 있어서 세라믹스기판이 반도체용 기판으로 된 것을 특징으로 하는 고열전도성 세라믹스기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860007670A 1985-09-13 1986-09-12 고열전도성 세라믹스기판 KR900001838B1 (ko)

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JP85203104 1985-09-13
JP60203104A JPS6265991A (ja) 1985-09-13 1985-09-13 高熱伝導性セラミツクス基板
JP60-203104 1985-09-13

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KR870003678A true KR870003678A (ko) 1987-04-18
KR900001838B1 KR900001838B1 (ko) 1990-03-24

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JP (1) JPS6265991A (ko)
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DE (1) DE3687389T2 (ko)

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DE3687389T2 (de) 1993-05-19
EP0217584B1 (en) 1992-12-30
JPS6265991A (ja) 1987-03-25
US5164246A (en) 1992-11-17
KR900001838B1 (ko) 1990-03-24
EP0217584A3 (en) 1989-03-22
DE3687389D1 (de) 1993-02-11
EP0217584A2 (en) 1987-04-08
JPH0510310B2 (ko) 1993-02-09

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