KR870008055A - 질화 알루미늄 소결체 및 그 제조방법 - Google Patents
질화 알루미늄 소결체 및 그 제조방법 Download PDFInfo
- Publication number
- KR870008055A KR870008055A KR870001437A KR870001437A KR870008055A KR 870008055 A KR870008055 A KR 870008055A KR 870001437 A KR870001437 A KR 870001437A KR 870001437 A KR870001437 A KR 870001437A KR 870008055 A KR870008055 A KR 870008055A
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- KR
- South Korea
- Prior art keywords
- group
- elements
- cut aluminum
- sintered body
- aluminum sintered
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 7
- 229910052782 aluminium Inorganic materials 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000001465 metallisation Methods 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052767 actinium Inorganic materials 0.000 claims 2
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims 2
- 238000005245 sintering Methods 0.000 claims 2
- 239000006104 solid solution Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5133—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Products (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (4)
- 적어도 그 표면의 일부에 도전성 금속화층이 있는 절화 알루미늄 소결체에 있어서, 그 도전성 금속화층이가) 몰리브덴, 텅스텐 및 탄탈로된 그룹(그룹 I)군에서 선택된 적어도 한가지 및,나) 주기율표의 제 Ⅲ족 원소, 제 Ⅳa쪽 원소, 희토류 원소 및 악티늄쪽 원소로 된 그룹(그룹 Ⅱ)에서 선택된 적어도 한가지를 구성상의 성분 원소로서 포함하고 있는 것을 특징으로 하는 절화 알루미늄 소결체.
- 제 1 항에 있어서, 그 구성상이 그 성분 원소 단체(單體), 그 성분 원소를 포함하는 화합물 또는 고용체, 또는 이들 단체, 화합물 및 고용체중의 두개 이상의 혼합체인 것을 특징으로 하는 절화 알루미늄 소결체.
- 제 1 항에 있어서, 그 절화 알루미늄 소결체가 반도체용 기판인 것을 특징으로 하는 절화 알루미늄 소결체.
- 절화 알루미늄의 소결전의 구체(驅體)의 몰리브덴, 텅스텐, 탄탈 및 이들중 한가지 또는 두가지 이상을 포함하고 있는 화합물의 군에서 선택된 적어도 한가지와 주기율표의 Ⅲ쪽 원소, Ⅳa쪽 원소, 희토류 원소(희토류 원소는 Sc. Y를 포함하는 란탄계이다), 악티늄 쪽계 원소 및 이들중 한가지 또는 두가지 이상을 포함하고 있는 화합물의 군에서 선택된 적어도 한가지를 포함하는 페이스트를 도포하고 계속해서 전체를 동시에 소결하는 것을 특징으로 하는 도전성 금속화층이 있는 절화 알루미늄 소결체의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33824 | 1986-02-20 | ||
JP33826 | 1986-02-20 | ||
JP3382486A JPS62197372A (ja) | 1986-02-20 | 1986-02-20 | 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法 |
JP3382686A JPS62197374A (ja) | 1986-02-20 | 1986-02-20 | 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法 |
JP61-33824 | 1986-02-20 | ||
JP61171914A JPH0738491B2 (ja) | 1986-07-23 | 1986-07-23 | 回路基板の製造方法及び回路基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870008055A true KR870008055A (ko) | 1987-09-24 |
KR900006122B1 KR900006122B1 (ko) | 1990-08-24 |
Family
ID=27288220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870001437A KR900006122B1 (ko) | 1986-02-20 | 1987-02-20 | 질화알루미늄 소결체 및 그 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4770953A (ko) |
EP (1) | EP0235682B2 (ko) |
KR (1) | KR900006122B1 (ko) |
DE (1) | DE3789628T3 (ko) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6265991A (ja) * | 1985-09-13 | 1987-03-25 | 株式会社東芝 | 高熱伝導性セラミツクス基板 |
JPS6318648A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | 窒化アルミニウム回路基板 |
JPH0680873B2 (ja) * | 1986-07-11 | 1994-10-12 | 株式会社東芝 | 回路基板 |
CA1333241C (en) * | 1987-01-26 | 1994-11-29 | Akira Sasame | Aluminum nitride sintered body formed with metallized layer and method of manufacturing the same |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
US4906511A (en) * | 1987-02-12 | 1990-03-06 | Kabushiki Kaisha Toshiba | Aluminum nitride circuit board |
US4883704A (en) * | 1987-03-30 | 1989-11-28 | Kabushiki Kaisha Toshiba | Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it |
JPH0676790B2 (ja) * | 1987-07-30 | 1994-09-28 | 株式会社東芝 | イグナイタ |
JP2544398B2 (ja) * | 1987-08-27 | 1996-10-16 | 富士通株式会社 | A1nセラミックスのメタライズ方法 |
US5017434A (en) * | 1988-01-27 | 1991-05-21 | Enloe Jack H | Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite |
JPH01203270A (ja) * | 1988-02-08 | 1989-08-16 | Sumitomo Electric Ind Ltd | 高熱伝導性窒化アルミニウム焼結体及びその製造法 |
JP2949586B2 (ja) * | 1988-03-07 | 1999-09-13 | 株式会社日立製作所 | 電導材及びその製造法 |
US5264388A (en) * | 1988-05-16 | 1993-11-23 | Sumitomo Electric Industries, Inc. | Sintered body of aluminum nitride |
US5272009A (en) * | 1988-10-21 | 1993-12-21 | Battelle Memorial Institute | Laminate material and its use as heat-sink |
JP2765885B2 (ja) * | 1988-11-14 | 1998-06-18 | 新光電気工業株式会社 | 窒化アルミニウム回路基板及びその製造方法 |
JP2774560B2 (ja) * | 1989-03-31 | 1998-07-09 | 株式会社東芝 | 窒化アルミニウムメタライズ基板 |
US4908116A (en) * | 1989-06-01 | 1990-03-13 | The Board Of Trustees At The Leland Stanford Junior University | Capillary electrophoretic device employing structure permitting electrical contact through ionic movement |
US5041700A (en) * | 1989-09-27 | 1991-08-20 | Kabushiki Kaisha Toshiba | Circuit board including an aluminum nitride substrate and a multilayered metal oxynitride structure |
US5830570A (en) * | 1989-12-19 | 1998-11-03 | Kyocera Corporation | Aluminum nitride substrate and process for preparation thereof |
US5370907A (en) * | 1990-06-15 | 1994-12-06 | Sumitomo Electric Industries, Ltd. | Forming a metallized layer on an AlN substrate by applying and heating a paste of a metal composed of W and Mo |
JPH0461293A (ja) * | 1990-06-29 | 1992-02-27 | Toshiba Corp | 回路基板及びその製造方法 |
US5200249A (en) * | 1990-08-15 | 1993-04-06 | W. R. Grace & Co.-Conn. | Via metallization for AlN ceramic electronic package |
US5173354A (en) * | 1990-12-13 | 1992-12-22 | Cornell Research Foundation, Inc. | Non-beading, thin-film, metal-coated ceramic substrate |
US5288769A (en) * | 1991-03-27 | 1994-02-22 | Motorola, Inc. | Thermally conducting adhesive containing aluminum nitride |
US5775403A (en) * | 1991-04-08 | 1998-07-07 | Aluminum Company Of America | Incorporating partially sintered preforms in metal matrix composites |
US5616421A (en) * | 1991-04-08 | 1997-04-01 | Aluminum Company Of America | Metal matrix composites containing electrical insulators |
US5570502A (en) * | 1991-04-08 | 1996-11-05 | Aluminum Company Of America | Fabricating metal matrix composites containing electrical insulators |
US5158912A (en) * | 1991-04-09 | 1992-10-27 | Digital Equipment Corporation | Integral heatsink semiconductor package |
EP0603282A1 (en) * | 1991-09-12 | 1994-06-29 | The Dow Chemical Company | Method of making co-fired, multilayer substrates |
DE4138214A1 (de) * | 1991-11-21 | 1993-05-27 | Daimler Benz Ag | Verfahren zur metallisierung von aluminiumnitridkeramik |
JPH07507973A (ja) * | 1992-05-12 | 1995-09-07 | ザ カーボランダム カンパニー | 窒化アルミニウムの薄膜金属化及びロウ付け |
US5311399A (en) * | 1992-06-24 | 1994-05-10 | The Carborundum Company | High power ceramic microelectronic package |
JPH06206772A (ja) * | 1992-11-18 | 1994-07-26 | Toshiba Corp | 窒化アルミニウム焼結体およびセラミック回路基板 |
JPH0715101A (ja) * | 1993-06-25 | 1995-01-17 | Shinko Electric Ind Co Ltd | 酸化物セラミック回路基板及びその製造方法 |
JP3724592B2 (ja) * | 1993-07-26 | 2005-12-07 | ハイニックス セミコンダクター アメリカ インコーポレイテッド | 半導体基板の平坦化方法 |
JP2634133B2 (ja) * | 1993-08-03 | 1997-07-23 | 日本特殊陶業株式会社 | 高誘電体層を有する窒化アルミニウム多層配線基板及びその製造方法 |
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DE3247985C2 (de) * | 1982-12-24 | 1992-04-16 | W.C. Heraeus Gmbh, 6450 Hanau | Keramischer Träger |
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JPS61142759A (ja) * | 1984-12-14 | 1986-06-30 | Ngk Spark Plug Co Ltd | Icパツケ−ジ用基板 |
-
1987
- 1987-02-19 US US07/016,557 patent/US4770953A/en not_active Expired - Lifetime
- 1987-02-19 DE DE3789628T patent/DE3789628T3/de not_active Expired - Fee Related
- 1987-02-19 EP EP87102344A patent/EP0235682B2/en not_active Expired - Lifetime
- 1987-02-20 KR KR1019870001437A patent/KR900006122B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0235682B2 (en) | 1997-11-12 |
DE3789628T3 (de) | 1998-04-02 |
EP0235682A3 (en) | 1988-08-17 |
US4770953A (en) | 1988-09-13 |
EP0235682B1 (en) | 1994-04-20 |
EP0235682A2 (en) | 1987-09-09 |
DE3789628D1 (de) | 1994-05-26 |
KR900006122B1 (ko) | 1990-08-24 |
DE3789628T2 (de) | 1994-09-01 |
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