KR950021343A - 정전척크 부착 세라믹 히터 - Google Patents
정전척크 부착 세라믹 히터 Download PDFInfo
- Publication number
- KR950021343A KR950021343A KR1019940037555A KR19940037555A KR950021343A KR 950021343 A KR950021343 A KR 950021343A KR 1019940037555 A KR1019940037555 A KR 1019940037555A KR 19940037555 A KR19940037555 A KR 19940037555A KR 950021343 A KR950021343 A KR 950021343A
- Authority
- KR
- South Korea
- Prior art keywords
- electrostatic chuck
- ceramic
- ceramic heater
- electrode
- heat generating
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract 8
- 239000011247 coating layer Substances 0.000 claims abstract 5
- 230000003746 surface roughness Effects 0.000 claims abstract 2
- 229910052582 BN Inorganic materials 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Ceramic Products (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Jigs For Machine Tools (AREA)
Abstract
본 발명은 반도체 프로세스에 있어서 승강온(昇降溫) 프로세스에 사용하여도 접합부에 박리가 발생하지 않는 정전척크부착 세라믹히터를 제공하는 것을 목적으로 한다. 본 발명은 정전척크부착 세라믹은 전기절연성 세라믹으로 이루어진 지지기재의 표면에 도전성 세라믹으로 이루어진 정전 척크용 전극을 접합시키고, 이면에는 도전성 세라믹으로 이루어진 발열층을 접합시키며, 그 위에 전기절연성 세라믹으로 이루어지는 피복층을 설치하여 이루어진 정전척크부착 세라믹에 있어서, 이 지지기재, 정전 척크용 전극 및 발열층의 표면거침 Rmax모두를 5㎛이상이 되도록 하여 이루어진 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 정전척크부착 세라믹히터의 종단 도면이다.
Claims (5)
- 전기절연성 세라믹으로 이루어진 지지 기재의 표면에 도전성 세라믹으로 이루어지는 정전 척크용 전극을 접합함과 동시에, 이면에 도전선 세라믹으로 이루어진 발열층을 접합하고, 그들 위에 전기절연성 세라믹으로 이루어진 피복층을 설치한 정전척크부착 세라믹 히터에 있어서, 이 지지기재, 정전 척크용 전극 및 발열층의 표면거침Rmax를 모두 5㎛ 이상으로서 이루어짐을 특징으로 하는 정전척크부착 세라믹히터.
- 제1항에 있어서, 지지 기재와 피복층이 질화붕소, 질화붕소와 질화 알루미늄의 혼합물 또는 질화규소이며, 상기 정전척크용 전극 및 발열층이 흑연 또는 탄화규소인 정전척크부착 세라믹히터,
- 제2항에 있어서, 정전 척크용 전극, 발열층 및 피복층을 화학기상 증착법으로 제조되는 정전척크부착 세라믹히터.
- 제1항 또는 제2항에 있어서, 피복층위에 확산 방지층이 접합되어 있는 정전척크부착 세라믹히터.
- 제4항에 있어서, 확산 방지층에 산화 규소 또는 질화 규소인 정전척크부착 세라믹히터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33076493 | 1993-12-27 | ||
JP93-330764 | 1993-12-27 | ||
JP94-316374 | 1994-12-20 | ||
JP31637494A JPH07307377A (ja) | 1993-12-27 | 1994-12-20 | 静電チャック付セラミックスヒーター |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950021343A true KR950021343A (ko) | 1995-07-26 |
Family
ID=26568634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940037555A KR950021343A (ko) | 1993-12-27 | 1994-12-27 | 정전척크 부착 세라믹 히터 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5665260A (ko) |
JP (1) | JPH07307377A (ko) |
KR (1) | KR950021343A (ko) |
TW (1) | TW287294B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113396535A (zh) * | 2019-02-21 | 2021-09-14 | 京瓷株式会社 | 试样保持工具 |
Families Citing this family (61)
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JP3208029B2 (ja) * | 1994-11-22 | 2001-09-10 | 株式会社巴川製紙所 | 静電チャック装置およびその作製方法 |
JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
EP0803900A3 (en) * | 1996-04-26 | 1999-12-29 | Applied Materials, Inc. | Surface preparation to enhance the adhesion of a dielectric layer |
US6037572A (en) * | 1997-02-26 | 2000-03-14 | White Consolidated Industries, Inc. | Thin film heating assemblies |
US5901030A (en) * | 1997-12-02 | 1999-05-04 | Dorsey Gage, Inc. | Electrostatic chuck employing thermoelectric cooling |
JPH11157953A (ja) | 1997-12-02 | 1999-06-15 | Nhk Spring Co Ltd | セラミックスと金属との構造体及びそれを用いた静電チャック装置 |
JPH11260534A (ja) * | 1998-01-09 | 1999-09-24 | Ngk Insulators Ltd | 加熱装置およびその製造方法 |
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JP2001077182A (ja) * | 1999-06-09 | 2001-03-23 | Ibiden Co Ltd | 半導体製造・検査装置用セラミック基板 |
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JP2001118664A (ja) * | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
US6835916B2 (en) | 1999-08-09 | 2004-12-28 | Ibiden, Co., Ltd | Ceramic heater |
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JP2001297857A (ja) * | 1999-11-24 | 2001-10-26 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
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JP4209057B2 (ja) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
WO2002091457A1 (fr) * | 1999-12-09 | 2002-11-14 | Ibiden Co., Ltd. | Plaque ceramique pour appareil de production/controle de semi-conducteurs |
US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
JP2001253777A (ja) * | 2000-03-13 | 2001-09-18 | Ibiden Co Ltd | セラミック基板 |
US6693789B2 (en) * | 2000-04-05 | 2004-02-17 | Sumitomo Osaka Cement Co., Ltd. | Susceptor and manufacturing method thereof |
EP1274280A1 (en) * | 2000-04-14 | 2003-01-08 | Ibiden Co., Ltd. | Ceramic heater |
JP2002141257A (ja) * | 2000-05-24 | 2002-05-17 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
JP3516392B2 (ja) | 2000-06-16 | 2004-04-05 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
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US20040035846A1 (en) * | 2000-09-13 | 2004-02-26 | Yasuji Hiramatsu | Ceramic heater for semiconductor manufacturing and inspecting equipment |
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JPWO2002043441A1 (ja) * | 2000-11-24 | 2004-04-02 | イビデン株式会社 | セラミックヒータ、および、セラミックヒータの製造方法 |
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US6538872B1 (en) | 2001-11-05 | 2003-03-25 | Applied Materials, Inc. | Electrostatic chuck having heater and method |
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WO2003098115A1 (fr) * | 2002-05-16 | 2003-11-27 | Nippon Electric Glass Co., Ltd. | Plaque de cuisson superieure |
JP3963788B2 (ja) * | 2002-06-20 | 2007-08-22 | 信越化学工業株式会社 | 静電吸着機能を有する加熱装置 |
JP2004146567A (ja) * | 2002-10-24 | 2004-05-20 | Sumitomo Electric Ind Ltd | 半導体製造装置用セラミックスヒーター |
JP4302428B2 (ja) * | 2003-05-09 | 2009-07-29 | 信越化学工業株式会社 | 静電吸着機能を有するウエーハ加熱装置 |
JP4077430B2 (ja) * | 2003-07-31 | 2008-04-16 | 佳知 高石 | 骨密度評価装置および骨密度評価方法 |
JP4309714B2 (ja) * | 2003-08-27 | 2009-08-05 | 信越化学工業株式会社 | 静電吸着機能を有する加熱装置 |
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US20060088692A1 (en) * | 2004-10-22 | 2006-04-27 | Ibiden Co., Ltd. | Ceramic plate for a semiconductor producing/examining device |
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KR100794960B1 (ko) * | 2006-06-07 | 2008-01-16 | (주)나노테크 | 하이브리드형 히터 제조방법 |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US7589950B2 (en) * | 2006-10-13 | 2009-09-15 | Applied Materials, Inc. | Detachable electrostatic chuck having sealing assembly |
CN102308380B (zh) * | 2009-02-04 | 2014-06-04 | 马特森技术有限公司 | 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法 |
JP5543123B2 (ja) * | 2009-03-30 | 2014-07-09 | 大日本スクリーン製造株式会社 | 熱処理用サセプタおよび熱処理装置 |
EP2293050B1 (en) * | 2009-04-07 | 2016-09-07 | ANBE SMT Co. | Heating apparatus for x-ray inspection |
JP6017781B2 (ja) * | 2011-12-07 | 2016-11-02 | 新光電気工業株式会社 | 基板温調固定装置及びその製造方法 |
CN103428909A (zh) * | 2013-07-12 | 2013-12-04 | 罗日良 | 一种发热管成型工艺 |
CN103369750A (zh) * | 2013-08-08 | 2013-10-23 | 罗日良 | 一种发热管成型工艺 |
JP6708518B2 (ja) * | 2016-08-09 | 2020-06-10 | 新光電気工業株式会社 | 基板固定装置及びその製造方法 |
JP6587223B1 (ja) * | 2018-07-30 | 2019-10-09 | Toto株式会社 | 静電チャック |
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KR950013501B1 (ko) * | 1990-10-05 | 1995-11-08 | 스미토모 일렉트릭 인더스트리즈, 엘티디. | 다이아몬드피복 경질재료, 드로우어웨이 인서트 및 그 제조방법 |
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-
1994
- 1994-12-20 JP JP31637494A patent/JPH07307377A/ja active Pending
- 1994-12-27 US US08/364,196 patent/US5665260A/en not_active Expired - Lifetime
- 1994-12-27 KR KR1019940037555A patent/KR950021343A/ko active IP Right Grant
-
1995
- 1995-01-10 TW TW084100158A patent/TW287294B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113396535A (zh) * | 2019-02-21 | 2021-09-14 | 京瓷株式会社 | 试样保持工具 |
CN113396535B (zh) * | 2019-02-21 | 2024-01-19 | 京瓷株式会社 | 试样保持工具 |
Also Published As
Publication number | Publication date |
---|---|
US5665260A (en) | 1997-09-09 |
TW287294B (ko) | 1996-10-01 |
JPH07307377A (ja) | 1995-11-21 |
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