KR890001180A - 세라믹 패키지 - Google Patents
세라믹 패키지 Download PDFInfo
- Publication number
- KR890001180A KR890001180A KR1019880005343A KR880005343A KR890001180A KR 890001180 A KR890001180 A KR 890001180A KR 1019880005343 A KR1019880005343 A KR 1019880005343A KR 880005343 A KR880005343 A KR 880005343A KR 890001180 A KR890001180 A KR 890001180A
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic package
- sintered body
- substrate portion
- ceramic
- note
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 세라믹 패키지의 일실시예를 나타낸 단면도.
Claims (1)
- 반도체 소자등이 탑제되는 기판부가 질화알미늄 소결체 또는 탄화규소 소결체 등의 고열전도성 세라믹으로 되고, 금속도체 배선을 갖고 이 기판부상에 접합되는 틀몸체부가 뮤라이트 소결체로 되는 것을 특징으로 하는 세라믹 패키지.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-150683 | 1987-06-17 | ||
JP87-150683 | 1987-06-17 | ||
JP62150683A JP2579315B2 (ja) | 1987-06-17 | 1987-06-17 | セラミツクパツケ−ジ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890001180A true KR890001180A (ko) | 1989-03-18 |
KR910002811B1 KR910002811B1 (ko) | 1991-05-04 |
Family
ID=15502185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880005343A KR910002811B1 (ko) | 1987-06-17 | 1988-05-09 | 세라믹 패키지 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4827082A (ko) |
JP (1) | JP2579315B2 (ko) |
KR (1) | KR910002811B1 (ko) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2736464B2 (ja) * | 1989-11-30 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP2736452B2 (ja) * | 1989-11-27 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP2736455B2 (ja) * | 1989-11-27 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
JP2736451B2 (ja) * | 1989-11-27 | 1998-04-02 | 京セラ株式会社 | 半導体素子収納用パッケージ |
US5057648A (en) * | 1989-11-20 | 1991-10-15 | Westinghouse Electric Corp. | High voltage hybrid package |
JP2760107B2 (ja) * | 1989-12-07 | 1998-05-28 | 住友電気工業株式会社 | セラミックス基板の表面構造およびその製造方法 |
US5278429A (en) * | 1989-12-19 | 1994-01-11 | Fujitsu Limited | Semiconductor device having improved adhesive structure and method of producing same |
EP0434392B1 (en) * | 1989-12-19 | 1994-06-15 | Fujitsu Limited | Semiconductor device having improved adhesive structure and method of producing the same |
JP2764340B2 (ja) * | 1990-06-26 | 1998-06-11 | 京セラ株式会社 | 半導体素子収納用パッケージ |
US5294750A (en) * | 1990-09-18 | 1994-03-15 | Ngk Insulators, Ltd. | Ceramic packages and ceramic wiring board |
KR940002444B1 (ko) * | 1990-11-13 | 1994-03-24 | 금성일렉트론 주식회사 | 반도체 소자의 패키지 어셈블리 방법 |
US5111277A (en) * | 1991-03-29 | 1992-05-05 | Aegis, Inc. | Surface mount device with high thermal conductivity |
US5188985A (en) * | 1991-03-29 | 1993-02-23 | Aegis, Inc. | Surface mount device with high thermal conductivity |
US5296736A (en) * | 1992-12-21 | 1994-03-22 | Motorola, Inc. | Leveled non-coplanar semiconductor die contacts |
US5441918A (en) * | 1993-01-29 | 1995-08-15 | Lsi Logic Corporation | Method of making integrated circuit die package |
US5327325A (en) * | 1993-02-08 | 1994-07-05 | Fairchild Space And Defense Corporation | Three-dimensional integrated circuit package |
JP2541487B2 (ja) * | 1993-11-29 | 1996-10-09 | 日本電気株式会社 | 半導体装置パッケ―ジ |
US5498900A (en) * | 1993-12-22 | 1996-03-12 | Honeywell Inc. | Semiconductor package with weldable ceramic lid |
JP3117377B2 (ja) * | 1994-11-29 | 2000-12-11 | 京セラ株式会社 | 半導体装置 |
US5801073A (en) * | 1995-05-25 | 1998-09-01 | Charles Stark Draper Laboratory | Net-shape ceramic processing for electronic devices and packages |
US5834840A (en) * | 1995-05-25 | 1998-11-10 | Massachusetts Institute Of Technology | Net-shape ceramic processing for electronic devices and packages |
US5821617A (en) * | 1996-07-29 | 1998-10-13 | Microsemi Corporation | Surface mount package with low coefficient of thermal expansion |
US5945735A (en) * | 1997-01-31 | 1999-08-31 | International Business Machines Corporation | Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity |
US6037193A (en) * | 1997-01-31 | 2000-03-14 | International Business Machines Corporation | Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity |
US5972734A (en) * | 1997-09-17 | 1999-10-26 | Lsi Logic Corporation | Interposer for ball grid array (BGA) package |
US6274929B1 (en) * | 1998-09-01 | 2001-08-14 | Texas Instruments Incorporated | Stacked double sided integrated circuit package |
JP2000091485A (ja) | 1998-07-14 | 2000-03-31 | Denso Corp | 半導体装置 |
US6072240A (en) * | 1998-10-16 | 2000-06-06 | Denso Corporation | Semiconductor chip package |
US6693350B2 (en) | 1999-11-24 | 2004-02-17 | Denso Corporation | Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure |
US6703707B1 (en) * | 1999-11-24 | 2004-03-09 | Denso Corporation | Semiconductor device having radiation structure |
US6917461B2 (en) | 2000-12-29 | 2005-07-12 | Texas Instruments Incorporated | Laminated package |
TW487258U (en) * | 2001-02-15 | 2002-05-11 | Quanta Comp Inc | Pivot structure of a mobile phone detachable from a base thereof |
JP4479121B2 (ja) * | 2001-04-25 | 2010-06-09 | 株式会社デンソー | 半導体装置の製造方法 |
EP2216891B1 (en) * | 2003-08-21 | 2012-01-04 | Denso Corporation | Mounting structure ofa semiconductor device |
JP4285753B2 (ja) * | 2004-06-21 | 2009-06-24 | 田中貴金属工業株式会社 | ハーメチックシールカバー及びその製造方法 |
JP4699225B2 (ja) * | 2006-01-31 | 2011-06-08 | 株式会社トクヤマ | メタライズドセラミックス基板の製造方法、該方法により製造したメタライズドセラミックス基板、およびパッケージ |
US8080872B2 (en) * | 2008-06-16 | 2011-12-20 | Hcc Aegis, Inc. | Surface mount package with high thermal conductivity |
US8143717B2 (en) * | 2008-06-16 | 2012-03-27 | Hcc Aegis, Inc. | Surface mount package with ceramic sidewalls |
TW201034129A (en) * | 2009-03-11 | 2010-09-16 | High Conduction Scient Co Ltd | Frame-type copper- clad ceramic substrate and the manufacturing method thereof |
EP2750182A1 (en) * | 2012-12-28 | 2014-07-02 | Services Pétroliers Schlumberger | Electronic device sealing for a downhole tool |
CN111613710B (zh) * | 2020-06-29 | 2021-08-13 | 松山湖材料实验室 | 一种电子设备、半导体器件、封装结构、支架及其制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843355B2 (ja) * | 1976-12-20 | 1983-09-26 | 日本特殊陶業株式会社 | セラミツクと低膨張性金属部材の封止構造体 |
JPS55139709A (en) * | 1979-04-18 | 1980-10-31 | Fujitsu Ltd | Method of fabricating mullite substrate |
US4780572A (en) * | 1985-03-04 | 1988-10-25 | Ngk Spark Plug Co., Ltd. | Device for mounting semiconductors |
JPS61256746A (ja) * | 1985-05-10 | 1986-11-14 | Hitachi Ltd | 半導体装置 |
JPS63197343U (ko) * | 1987-06-11 | 1988-12-19 |
-
1987
- 1987-06-17 JP JP62150683A patent/JP2579315B2/ja not_active Expired - Lifetime
-
1988
- 1988-05-09 KR KR1019880005343A patent/KR910002811B1/ko not_active IP Right Cessation
- 1988-06-16 US US07/207,218 patent/US4827082A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63314855A (ja) | 1988-12-22 |
JP2579315B2 (ja) | 1997-02-05 |
US4827082A (en) | 1989-05-02 |
KR910002811B1 (ko) | 1991-05-04 |
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