KR100742240B1 - 과깨짐 형성 단계를 포함하는 박막의 전달 방법 - Google Patents
과깨짐 형성 단계를 포함하는 박막의 전달 방법 Download PDFInfo
- Publication number
- KR100742240B1 KR100742240B1 KR1020027001366A KR20027001366A KR100742240B1 KR 100742240 B1 KR100742240 B1 KR 100742240B1 KR 1020027001366 A KR1020027001366 A KR 1020027001366A KR 20027001366 A KR20027001366 A KR 20027001366A KR 100742240 B1 KR100742240 B1 KR 100742240B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- source substrate
- film
- thickness
- forming
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000010409 thin film Substances 0.000 claims abstract description 83
- 239000010408 film Substances 0.000 claims abstract description 47
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 36
- 230000007017 scission Effects 0.000 claims abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 22
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000002716 delivery method Methods 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000002513 implantation Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000010070 molecular adhesion Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9910121A FR2797347B1 (fr) | 1999-08-04 | 1999-08-04 | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
| FR99/10121 | 1999-08-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020085868A KR20020085868A (ko) | 2002-11-16 |
| KR100742240B1 true KR100742240B1 (ko) | 2007-07-24 |
Family
ID=9548879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027001366A KR100742240B1 (ko) | 1999-08-04 | 2000-08-03 | 과깨짐 형성 단계를 포함하는 박막의 전달 방법 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1203403A1 (fr) |
| JP (1) | JP2003506892A (fr) |
| KR (1) | KR100742240B1 (fr) |
| FR (1) | FR2797347B1 (fr) |
| MY (1) | MY137329A (fr) |
| TW (1) | TW457565B (fr) |
| WO (1) | WO2001011667A1 (fr) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
| FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
| FR2830983B1 (fr) | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
| JP4277481B2 (ja) | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | 半導体基板の製造方法、半導体装置の製造方法 |
| FR2845517B1 (fr) * | 2002-10-07 | 2005-05-06 | Commissariat Energie Atomique | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
| FR2845518B1 (fr) * | 2002-10-07 | 2005-10-14 | Commissariat Energie Atomique | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
| FR2846788B1 (fr) * | 2002-10-30 | 2005-06-17 | Procede de fabrication de substrats demontables | |
| FR2847075B1 (fr) * | 2002-11-07 | 2005-02-18 | Commissariat Energie Atomique | Procede de formation d'une zone fragile dans un substrat par co-implantation |
| US7176108B2 (en) | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
| FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
| FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
| FR2857953B1 (fr) * | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
| FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
| US7772087B2 (en) | 2003-12-19 | 2010-08-10 | Commissariat A L'energie Atomique | Method of catastrophic transfer of a thin film after co-implantation |
| JP4879737B2 (ja) * | 2004-01-29 | 2012-02-22 | ソワテク | 半導体層の分離方法 |
| EP1605504B1 (fr) * | 2004-06-10 | 2011-05-25 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Procédé pour la fabrication d'une tranche SOI |
| FR2886051B1 (fr) | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | Procede de detachement d'un film mince |
| FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
| FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
| FR2899378B1 (fr) | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
| JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
| FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
| CN101663733B (zh) | 2007-04-20 | 2013-02-27 | 株式会社半导体能源研究所 | 制造绝缘体上硅衬底和半导体器件的方法 |
| KR101440930B1 (ko) * | 2007-04-20 | 2014-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Ｓｏｉ 기판의 제작방법 |
| JP5367330B2 (ja) | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP5464843B2 (ja) | 2007-12-03 | 2014-04-09 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
| JP5339785B2 (ja) * | 2008-06-03 | 2013-11-13 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
| US8524572B2 (en) * | 2011-10-06 | 2013-09-03 | Micron Technology, Inc. | Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions |
| US9281233B2 (en) * | 2012-12-28 | 2016-03-08 | Sunedison Semiconductor Limited | Method for low temperature layer transfer in the preparation of multilayer semiconductor devices |
| FR3055063B1 (fr) * | 2016-08-11 | 2018-08-31 | Soitec | Procede de transfert d'une couche utile |
| FR3108787B1 (fr) * | 2020-03-31 | 2022-04-01 | Commissariat Energie Atomique | Procédé basse température de transfert et de guérison d’une couche semi-conductrice |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1050628A (ja) * | 1996-05-15 | 1998-02-20 | Commiss Energ Atom | 半導体材料薄層の製造方法 |
| US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2738671B1 (fr) * | 1995-09-13 | 1997-10-10 | Commissariat Energie Atomique | Procede de fabrication de films minces a materiau semiconducteur |
| EP0995227A4 (fr) * | 1997-05-12 | 2000-07-05 | Silicon Genesis Corp | Procede de clivage controle |
| US5909627A (en) * | 1998-05-18 | 1999-06-01 | Philips Electronics North America Corporation | Process for production of thin layers of semiconductor material |
-
1999
- 1999-08-04 FR FR9910121A patent/FR2797347B1/fr not_active Expired - Fee Related
-
2000
- 2000-08-03 EP EP00956612A patent/EP1203403A1/fr not_active Withdrawn
- 2000-08-03 WO PCT/FR2000/002239 patent/WO2001011667A1/fr active Search and Examination
- 2000-08-03 KR KR1020027001366A patent/KR100742240B1/ko not_active IP Right Cessation
- 2000-08-03 JP JP2001516228A patent/JP2003506892A/ja active Pending
- 2000-08-04 MY MYPI20003580A patent/MY137329A/en unknown
- 2000-09-05 TW TW089115613A patent/TW457565B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1050628A (ja) * | 1996-05-15 | 1998-02-20 | Commiss Energ Atom | 半導体材料薄層の製造方法 |
| US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001011667A1 (fr) | 2001-02-15 |
| MY137329A (en) | 2009-01-30 |
| TW457565B (en) | 2001-10-01 |
| FR2797347B1 (fr) | 2001-11-23 |
| JP2003506892A (ja) | 2003-02-18 |
| EP1203403A1 (fr) | 2002-05-08 |
| FR2797347A1 (fr) | 2001-02-09 |
| KR20020085868A (ko) | 2002-11-16 |
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| FPAY | Annual fee payment |
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