FR2845517B1 - Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur - Google Patents
Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteurInfo
- Publication number
- FR2845517B1 FR2845517B1 FR0212443A FR0212443A FR2845517B1 FR 2845517 B1 FR2845517 B1 FR 2845517B1 FR 0212443 A FR0212443 A FR 0212443A FR 0212443 A FR0212443 A FR 0212443A FR 2845517 B1 FR2845517 B1 FR 2845517B1
- Authority
- FR
- France
- Prior art keywords
- demondable
- implementing
- obtaining
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0212443A FR2845517B1 (fr) | 2002-10-07 | 2002-10-07 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
| FR0350130A FR2845518B1 (fr) | 2002-10-07 | 2003-04-25 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
| US10/530,640 US7238598B2 (en) | 2002-10-07 | 2003-10-03 | Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element |
| JP2005500039A JP4777774B2 (ja) | 2002-10-07 | 2003-10-03 | 剥離可能な半導体基板を形成するための方法ならびに半導体素子を得るための方法 |
| PCT/FR2003/050077 WO2004032183A2 (fr) | 2002-10-07 | 2003-10-03 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur. |
| AT03780289T ATE539446T1 (de) | 2002-10-07 | 2003-10-03 | Herstellung von einem abnehmbaren halbleitersubstrat und einem halbleiterelement |
| EP03780289A EP1550158B1 (fr) | 2002-10-07 | 2003-10-03 | Realisation d un substrat semiconducteur demontable et obten tion d un element semiconducteur. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0212443A FR2845517B1 (fr) | 2002-10-07 | 2002-10-07 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2845517A1 FR2845517A1 (fr) | 2004-04-09 |
| FR2845517B1 true FR2845517B1 (fr) | 2005-05-06 |
Family
ID=32011478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0212443A Expired - Fee Related FR2845517B1 (fr) | 2002-10-07 | 2002-10-07 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2845517B1 (fr) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
| US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
| JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
| FR2797347B1 (fr) * | 1999-08-04 | 2001-11-23 | Commissariat Energie Atomique | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
| FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
-
2002
- 2002-10-07 FR FR0212443A patent/FR2845517B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2845517A1 (fr) | 2004-04-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20140630 |