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KR100591461B1 - 두 반도체 기판의 알루미늄 전극 접합방법 - Google Patents

두 반도체 기판의 알루미늄 전극 접합방법 Download PDF

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KR100591461B1
KR100591461B1 KR1020050017955A KR20050017955A KR100591461B1 KR 100591461 B1 KR100591461 B1 KR 100591461B1 KR 1020050017955 A KR1020050017955 A KR 1020050017955A KR 20050017955 A KR20050017955 A KR 20050017955A KR 100591461 B1 KR100591461 B1 KR 100591461B1
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aluminum
semiconductor substrates
electrode
electrodes
melting point
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KR1020050017955A
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English (en)
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이병수
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(주)실리콘화일
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Priority to KR1020050017955A priority Critical patent/KR100591461B1/ko
Priority to JP2007556090A priority patent/JP2008530816A/ja
Priority to EP06716162A priority patent/EP1854135A4/en
Priority to US11/817,761 priority patent/US7732300B2/en
Priority to PCT/KR2006/000712 priority patent/WO2006093386A1/en
Priority to CNB2006800066816A priority patent/CN100508151C/zh
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Publication of KR100591461B1 publication Critical patent/KR100591461B1/ko

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Abstract

본 발명은 두 반도체 기판 위에 형성된 회로 등에 영향을 미치지 않는 낮은 온도에서 두 반도체 기판 위에 형성된 알루미늄(Al) 전극을 접합시키는 방법에 관한 것이다.
본 발명에 의한 두 반도체 기판의 알루미늄(Al) 전극 접합방법은 (a)두 개의 반도체 기판 각각에 알루미늄(Al) 전극을 형성하고, 상기 알루미늄(Al) 전극에 알루미늄(Al)과 구리(Cu)로 구성된 금속합금을 증착하는 단계; (b)상기 두 개의 반도체 기판의 알루미늄(Al) 전극을 마주보게 배열하는 단계; 및 (c)상기 알루미늄(Al) 전극에 증착된 금속합금의 녹는점보다 낮은 온도를 가하고, 상기 두 개의 반도체 기판에 소정의 압력을 가하는 단계;를 포함함을 특징으로 한다.
본 발명에 의하면, 두 반도체 기판 위에 형성된 회로 등에 영향을 미치지 않도록 Al0.83Cu0.17합금의 녹는점 보다 낮은 온도에서 접합을 진행 할 수 있고, 압력을 받는 부분만을 선택적으로 접합하는 것이 가능하다.

Description

두 반도체 기판의 알루미늄 전극 접합방법{Aluminum electrode junction method of two semiconductor substrate}
도 1a 내지 도 1c는 본 발명에 의한 두 반도체 기판 위에 형성된 알루미늄(Al) 전극의 접합과정을 도시한 것이다.
본 발명은 반도체 공정에 관한 것으로, 특히 반도체 공정이 진행된 두 기판을 겹칠 경우에서 금속 배선의 접합방법에 관한 것이다.
반도체 공정에서 전극을 접합하는 경우, 일반적으로 녹는점이 낮은 납(Pb), 주석(Sn), 비스무트(Bi) 등의 합금을 사용하는데, 이러한 물질들은 인체에 유해하고, 일반적으로 증기압이 낮아서 반도체 공정장비를 오염시킬 수 있으므로 반도체 공정에서 사용할 수 없는 단점이 있다.
대부분의 반도체 공정에서 금속전극으로 알루미늄(Al)을 사용하는데, 이러한 알루미늄(Al)을 사용하는 공정에서 두 기판을 겹쳐서 알루미늄(Al) 전극을 접합할 경우 알루미늄(Al)의 전극을 녹는점 근처까지 올려서 접합하는 것이 가능한데, 이 경우 접합하려는 이외의 부분의 전극이 같이 녹게 되므로 기 진행된 기판의 배선이나 회 로에 부정적인 영향을 미칠 수 있다.
본 발명이 이루고자 하는 기술적 과제는 두 반도체 기판 위에 형성된 회로 등에 영향을 미치지 않는 낮은 온도에서 반도체 공정 장비의 오염이 없이 두 반도체 기판 위에 형성된 알루미늄(Al) 전극을 접합시키는 방법을 제공하는 것이다.
상기 기술적 과제를 해결하기 위한 본 발명에 의한 두 반도체 기판의 알루미늄(Al) 전극 접합방법은 (a)두 개의 반도체 기판 각각에 알루미늄(Al) 전극을 형성하고, 상기 알루미늄(Al) 전극에 알루미늄(Al)과 구리(Cu)로 구성된 금속합금을 증착하는 단계; (b)상기 두 개의 반도체 기판의 알루미늄(Al) 전극을 마주보게 배열하는 단계; 및 (c)상기 알루미늄(Al) 전극에 증착된 합금의 녹는점보다 낮은 온도를 가하고, 상기 두 개의 반도체 기판에 소정의 압력을 가하는 단계;를 포함함을 특징으로 한다.
또한, 상기 금속합금은 Al0.83Cu0.17 임을 특징으로 한다.
이하 도면을 참조하여 본 발명을 상세히 설명하기로 한다.
도 1a 내지 도 1c는 본 발명에 의한 두 반도체 기판 위에 형성된 알루미늄(Al) 전극의 접합과정을 도시한 것이다.
도 1a는 두 반도체 기판에 형성된 Al 전극을 나타낸 것이다.
반도체 기판(10,20) 위에 접합하고자 하는 Al 전극(13,23)을 형성하고 그 위에 Al0.83Cu0.17 합금(15,25)을 증착한다.
도 1b는 두 개의 반도체 기판의 Al 전극이 접합되는 과정을 도시한 것이다.
두 반도체 기판(10,20)을 접합하고자 하는 Al 전극(13,23)이 겹치게 배열한 상태에서 Al0.83Cu0.17 합금(15,25)의 녹는점보다 낮은 온도를 가하고 양쪽 반도체 기판(10,20)에 적당한 압력이 가해지도록 한다.
상기 두 반도체 기판(10,20)에 적당한 압력을 가함으로써 접합하고자 하는 두 Al전극(13,23)이 압력을 받게 되어 상기 Al0.83Cu0.17 합금(15,25)은 대기압 상태에서의 녹는 점 보다 낮은 온도에서 녹게 된다.
상기 Al0.83Cu0.17 합금(15,25)은 녹는점이 약 540℃로 Al 전극(13,23)의 녹는점 650℃보다 훨씬 낮아서 용융접합에 유리하다. 또한 상기 Al0.83Cu0.17 합금(15,25)은 Al과 Cu가 균일하게 섞이는 특징을 갖는다.
도 1c은 두 개의 반도체 기판의 Al 전극이 접합된 상태를 도시한 것이다.
상기 Al0.83Cu0.17 합금(15,25)을 Al 전극(13,23) 위에 증착하고 온도를 가하면, 합금이 증착된 면이 Al 전극 부분보다 빨리 녹게 되므로, 접합부 이외 부분의 열적 손상을 방지할 수 있으며, 반도체 공정에서 일반적으로 사용되는 대표적인 금속인 Al과 Cu의 합금을 사용하므로 반도체 공정상의 오염이 발생하지 않는다.
또한, 고온에서 도포된 합금에서 Al 전극으로의 Cu의 확산은 Al 전극의 녹는점을 낮추는 효과를 주지만 이러한 확산에 의하여 형성된 합금의 녹는점은 원래의 합금 의 녹는점보다 높으므로 접합에 큰 영향을 미치지 않는다.
이상으로, 본 발명은 도면에 도시된 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서 본 발명의 진정한 기술적 보호 범위는 첨부된 청구범위의 기술적 사상에 의해 정해져야 할 것이다.
본 발명에 의하면, 두 반도체 기판 위에 형성된 회로 등에 영향을 미치지 않도록 Al0.83Cu0.17합금의 녹는점 보다 낮은 온도에서 접합을 진행 할 수 있고, 압력을 받는 부분만을 선택적으로 접합하는 것이 가능하다.

Claims (3)

  1. 두 개의 반도체 기판의 알루미늄(Al) 전극을 접합하는 방법에 있어서,
    (a)상기 두 개의 반도체 기판 각각에 알루미늄(Al) 전극을 형성하고, 상기 알루미늄(Al) 전극에 알루미늄(Al)과 구리(Cu)로 구성된 금속합금을 증착하는 단계;
    (b)상기 두 개의 반도체 기판의 알루미늄(Al) 전극을 마주보게 배열하는 단계; 및
    (c)상기 알루미늄(Al) 전극에 증착된 금속합금의 녹는점보다 낮은 온도를 가하고, 상기 두 개의 반도체 기판에 소정의 압력을 가하는 단계;를 포함함을 특징으로 하는 두 반도체 기판의 알루미늄(Al) 전극 접합방법.
  2. 제1항에 있어서, 상기 금속합금은
    Al0.83Cu0.17 임을 특징으로 하는 두 반도체 기판의 알루미늄(Al) 전극 접합방법.
  3. 제1항에 있어서, 상기 (c)단계에서 가열된 온도는
    540℃ 이하임을 특징으로 하는 두 반도체 기판의 알루미늄(Al) 전극 접합방법.
KR1020050017955A 2005-03-04 2005-03-04 두 반도체 기판의 알루미늄 전극 접합방법 KR100591461B1 (ko)

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JP2007556090A JP2008530816A (ja) 2005-03-04 2006-03-02 ２枚の半導体基板のアルミニウム電極の接合方法
EP06716162A EP1854135A4 (en) 2005-03-04 2006-03-02 METHOD FOR BONDING ALUMINUM ELECTRODES FROM TWO SEMICONDUCTOR SUBSTRATES
US11/817,761 US7732300B2 (en) 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates
PCT/KR2006/000712 WO2006093386A1 (en) 2005-03-04 2006-03-02 Method of bonding aluminum electrodes of two semiconductor substrates
CNB2006800066816A CN100508151C (zh) 2005-03-04 2006-03-02 使两个半导体衬底的铝电极接合的方法

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