JPH05129476A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH05129476A JPH05129476A JP3288891A JP28889191A JPH05129476A JP H05129476 A JPH05129476 A JP H05129476A JP 3288891 A JP3288891 A JP 3288891A JP 28889191 A JP28889191 A JP 28889191A JP H05129476 A JPH05129476 A JP H05129476A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- electromagnetic wave
- sealed
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000006096 absorbing agent Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000003566 sealing material Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 29
- 229920005989 resin Polymers 0.000 abstract description 29
- 238000007789 sealing Methods 0.000 abstract description 15
- 230000007257 malfunction Effects 0.000 abstract description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置およびそ
の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and its manufacturing method.
【０００２】[0002]
【従来の技術】近年、電子回路素子の高集積化、大規模
化に相反して半導体パッケージの小型化、薄型化が進ん
でおり、それに伴い電子機器の回路がより高密度化され
ている。このため、外部からの電磁波により回路の動作
が阻害されたり、電子回路の動作によって発生する電磁
波ノイズが他の回路の動作を阻害したり、さらには人体
に影響するといった電磁波による問題がクローズアップ
されおり、このような電子機器においては電磁波対策が
不可欠となっている。2. Description of the Related Art In recent years, semiconductor packages have been made smaller and thinner in opposition to higher integration and larger scale of electronic circuit elements, and accordingly, circuits of electronic devices have been made higher in density. Therefore, electromagnetic waves from outside interfere with the operation of circuits, electromagnetic noise generated by the operation of electronic circuits interferes with the operation of other circuits, and further affects the human body. Therefore, measures against electromagnetic waves are indispensable for such electronic devices.
【０００３】例えば、従来の樹脂封止型半導体装置１１
は、図９に示すように、ダイパッド２上に載置された半
導体チップ３とプリント基板上の回路配線との電気的導
通をとるためのリードフレーム４とを金属ワイヤ５で接
続し、これらを樹脂６で封止して構成されており、図１
０に示すように、プリント基板１７上に接続された樹脂
封止型半導体装置１１に対し、電子機器全体をシールド
材（電磁波遮蔽材）１８で覆い電磁波を遮蔽するように
していた。For example, a conventional resin-sealed semiconductor device 11
As shown in FIG. 9, a semiconductor chip 3 mounted on the die pad 2 and a lead frame 4 for electrically connecting the circuit wiring on the printed circuit board are connected by a metal wire 5, and these are connected. It is configured by sealing with resin 6, and as shown in FIG.
As shown in FIG. 0, with respect to the resin-sealed semiconductor device 11 connected on the printed board 17, the entire electronic device is covered with a shield material (electromagnetic wave shielding material) 18 to shield electromagnetic waves.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、、電子
機器全体をシールド材で覆うといった従来の電磁波対策
では、隣接する半導体装置間では相互に電磁波の影響を
受けるため、電子回路の誤動作を十分に防止できないと
いう問題点があった。この発明の目的は、上記従来の課
題を解決し、外部からの電磁波の影響を防止するととも
に、隣接する半導体装置間相互の電磁波の影響をも防止
する半導体装置およびその製造方法を提供することであ
る。However, in conventional electromagnetic wave countermeasures such as covering the entire electronic device with a shield material, adjacent semiconductor devices are mutually affected by the electromagnetic wave, so that malfunction of the electronic circuit is sufficiently prevented. There was a problem that I could not. An object of the present invention is to provide a semiconductor device and a manufacturing method thereof, which solve the above-mentioned conventional problems and prevent the influence of electromagnetic waves from the outside, and also prevent the influence of mutual electromagnetic waves between adjacent semiconductor devices. is there.
【０００５】[0005]
【課題を解決するための手段】この発明は上記課題を解
決するため、次のような構成を採用した。請求項１の発
明の半導体装置は、半導体素子の封止材料またはコーテ
ィング材料に電磁波ノイズを吸収する電磁波吸収剤を混
入している。請求項２の発明の半導体製造方法は、小さ
い金型にセットされた半導体装置を封止した後、この封
止された半導体装置を大きい金型にセットし、電磁波吸
収剤を混入した封止材料を用いて再度封止するようにし
ている。In order to solve the above problems, the present invention adopts the following configuration. In the semiconductor device according to the invention of claim 1, an electromagnetic wave absorber that absorbs electromagnetic noise is mixed in the sealing material or the coating material of the semiconductor element. In the semiconductor manufacturing method of the invention of claim 2, after sealing the semiconductor device set in a small mold, the sealed semiconductor device is set in a large mold and an electromagnetic wave absorbent is mixed. Is used to reseal.
【０００６】[0006]
【作用】請求項１の発明の構成によれば、電磁波を吸収
する材料が封止材料またはコーティング材料に混入され
ているので、外部からの電磁波ノイズを吸収して内部回
路に影響を与えない。また、半導体素子内部からの電磁
波ノイズも吸収して外部に洩らさないので、他の電子回
路の誤動作を防止することができる。According to the structure of the first aspect of the present invention, since the material that absorbs electromagnetic waves is mixed in the sealing material or the coating material, electromagnetic wave noise from the outside is absorbed and the internal circuit is not affected. Further, since electromagnetic wave noise from the inside of the semiconductor element is also absorbed and does not leak outside, malfunction of other electronic circuits can be prevented.
【０００７】請求項２の発明の構成によれば、導電性あ
る電磁波吸収剤が半導体装置に接触しないように固相状
態で製造されるので、リーク不良の発生を抑えて確実に
電磁波を遮蔽することができる。According to the second aspect of the present invention, since the conductive electromagnetic wave absorbent is manufactured in a solid state so as not to come into contact with the semiconductor device, occurrence of leak defects is suppressed and electromagnetic waves are reliably shielded. be able to.
【０００８】[0008]
【実施例】以下、この発明の実施例について図面を参照
しながら説明する。図１は、第１の実施例である樹脂封
止型半導体装置１の構成を示す断面図で、装置１の本体
は、図９に示す従来例と同じ樹脂封止型として構成され
ており、同符号は同じものを示す。すなわち、図１にお
いて、２はダイパッド、３は半導体素子、４はリードフ
レーム、５は金属ワイヤ、６は封止樹脂である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing the configuration of a resin-sealed semiconductor device 1 according to the first embodiment. The main body of the device 1 is configured as the same resin-sealed type as the conventional example shown in FIG. The same reference numerals indicate the same things. That is, in FIG. 1, 2 is a die pad, 3 is a semiconductor element, 4 is a lead frame, 5 is a metal wire, and 6 is a sealing resin.
【０００９】図１に示す実施例装置が従来のものと異な
るのは、半導体素子３を封止する封止樹脂６に対して電
磁波吸収剤７が混入された樹脂９が上下に接合して成形
されている点である。これにより、半導体装置の外部お
よび内部からの電磁波を吸収することができ、電子回路
の誤動作防止や人体への影響を防止することができる。
電磁波吸収剤７には、シリコンカーバイド、酸化亜鉛ウ
ィスカ等が使用されている。The device of the embodiment shown in FIG. 1 differs from the conventional device in that a resin 9 containing an electromagnetic wave absorber 7 is vertically joined to a sealing resin 6 for sealing a semiconductor element 3 and molded. That is the point. This makes it possible to absorb electromagnetic waves from the outside and the inside of the semiconductor device, prevent malfunction of the electronic circuit, and prevent effects on the human body.
Silicon carbide, zinc oxide whiskers, etc. are used as the electromagnetic wave absorber 7.
【００１０】図２は、図１と同様に、電磁波吸収剤７が
混入された樹脂９が上部に接合成形されたセラミック封
止型の半導体装置の構成を示す断面図で、このように構
成しても同様の効果が得られる。図３は、第２の実施例
である樹脂封止型半導体装置の構成を示す断面図で、装
置本体の構成は、図１に示す第１の実施例の構成と同じ
である。図１の構成と異なるのは、封止樹脂６中に、封
止樹脂よりも融点の高い樹脂やゴム等の絶縁性材料８で
表面全体をコーティングした電磁波吸収剤７を混入して
おき、この封止樹脂６によって成形した点である。As in FIG. 1, FIG. 2 is a cross-sectional view showing the structure of a ceramic-sealed semiconductor device in which a resin 9 mixed with an electromagnetic wave absorbent 7 is bonded and molded on the upper portion, and is constructed in this manner. However, the same effect can be obtained. FIG. 3 is a cross-sectional view showing the structure of the resin-sealed semiconductor device of the second embodiment, and the structure of the device body is the same as that of the first embodiment shown in FIG. The difference from the configuration of FIG. 1 is that the sealing resin 6 is mixed with an electromagnetic wave absorber 7 whose entire surface is coated with an insulating material 8 such as resin or rubber having a melting point higher than that of the sealing resin. This is a point formed by the sealing resin 6.
【００１１】このような構成にしたのは、シリコンカー
バイドや酸化亜鉛ウィスカ等の電磁波吸収剤７が導電性
を有するため、金属ワイヤ５間、リードフレーム４のピ
ン間、またはプリント基板上の配線間にまたがって電磁
波吸収剤７が存在すると、回路動作時にリーク不良を起
こす可能性が大きくなるからである。そこで、あらかじ
め電磁波吸収剤を上記した絶縁性材料８でコーティング
しておき、電磁波吸収剤７が他と接触しないようにした
ものである。これにより、リーク不良の発生を抑えるこ
とができる。With such a structure, since the electromagnetic wave absorber 7 such as silicon carbide or zinc oxide whiskers has conductivity, between the metal wires 5, between the pins of the lead frame 4, or between the wirings on the printed circuit board. This is because if the electromagnetic wave absorber 7 is present over the area, there is a high possibility that a leak failure will occur during circuit operation. Therefore, the electromagnetic wave absorber is coated with the above-mentioned insulating material 8 in advance so that the electromagnetic wave absorber 7 does not come into contact with others. As a result, it is possible to suppress the occurrence of defective leakage.
【００１２】第２の実施例では、図４に示すように、コ
ーティングされた電磁波吸収剤７を混合した樹脂９を半
導体素子３のコーティングレジンとして接合してもよ
く、図５に示すように、ポッティング樹脂として、ある
いは図６に示すように、樹脂封止型半導体装置１０が装
着されたプリント基板１１全体をコーティングしても同
様の効果が得られる。In the second embodiment, as shown in FIG. 4, a resin 9 mixed with a coated electromagnetic wave absorber 7 may be bonded as a coating resin for the semiconductor element 3, and as shown in FIG. Similar effects can be obtained by coating the entire printed circuit board 11 on which the resin-sealed semiconductor device 10 is mounted, as potting resin, or as shown in FIG.
【００１３】図７は、樹脂封止型半導体装置に対し、封
止樹脂よりも融点の高い樹脂やゴム等の絶縁性材料８で
コーティングした電磁波吸収剤７を混入した樹脂９でも
って装置全体をさらに封止し、樹脂２重封止型半導体装
置として構成した場合を示す図で、この様な構成によ
り、さらに確実な電磁波遮蔽効果を得ることができる。
図８（ａ）（ｂ）は、図７に示す樹脂２重封止型半導体
装置の製造方法を実施するための工程を示す図で、大き
さの異なる封止金型を用いて半導体装置を封止するよう
にしている。FIG. 7 shows a resin-encapsulated semiconductor device in which the entire device is assembled with a resin 9 mixed with an electromagnetic wave absorber 7 coated with an insulating material 8 such as resin or rubber having a melting point higher than that of the encapsulating resin. It is a figure showing the case where it is further sealed and configured as a resin double-sealed semiconductor device. With such a configuration, a more reliable electromagnetic wave shielding effect can be obtained.
8A and 8B are diagrams showing steps for carrying out the method for manufacturing the resin double-sealed semiconductor device shown in FIG. 7, in which the semiconductor device is manufactured by using sealing molds of different sizes. It is designed to be sealed.
【００１４】まず、図８（ａ）に示すように、小さい金
型１２にセットされた半導体装置に対し、金型を閉じて
タブレット化した封止樹脂６をプランジャ１３で押し込
み、封止樹脂６をキャビティに充填して成形する。次
に、図８（ｂ）に示すように、大きい金型１４に封止樹
脂６で封止された半導体装置１０をセットし、樹脂等で
表面がコーティングされた電磁波吸収剤７が混入されタ
ブレット化した樹脂９をプランジャ１５で押し込み、樹
脂９をキャビティに充填して成形する。このような工程
により容易に樹脂２重封止型半導体装置を製造すること
ができる。First, as shown in FIG. 8A, the sealing resin 6 formed into a tablet by closing the die is pushed into the semiconductor device set in the small die 12 by the plunger 13, and the sealing resin 6 Is filled in the cavity and molded. Next, as shown in FIG. 8B, the semiconductor device 10 sealed with the sealing resin 6 is set in the large mold 14, and the electromagnetic wave absorber 7 whose surface is coated with a resin or the like is mixed into the tablet. The resin 9 thus converted is pushed by the plunger 15 to fill the cavity with the resin 9 for molding. Through such steps, the resin double-sealed semiconductor device can be easily manufactured.
【００１５】[0015]
【発明の効果】以上のように、この発明の半導体装置に
よれば、電磁波を吸収する材料が封止材料またはコーテ
ィング材料に混入されているので、外部からの電磁波ノ
イズを吸収して内部回路に影響を与えず、また、半導体
素子内部からの電磁波ノイズも吸収して外部に洩らさな
いので、半導体装置によって構成される電子回路の誤動
作を防止することができるとともに、人体への影響を大
きく削減することができるようになった。As described above, according to the semiconductor device of the present invention, since the electromagnetic wave absorbing material is mixed in the sealing material or the coating material, the electromagnetic wave noise from the outside is absorbed to the internal circuit. Since it has no influence and also absorbs electromagnetic noise from the inside of the semiconductor element and does not leak to the outside, it is possible to prevent malfunction of the electronic circuit formed by the semiconductor device and to greatly affect the human body. It has become possible to reduce.
【００１６】また、この発明の半導体製造方法によれ
ば、容易に樹脂２重封止型半導体装置を製造することが
でき、さらに確実な電磁波遮蔽効果を得ることができる
半導体装置を提供することができるようになった。Further, according to the semiconductor manufacturing method of the present invention, it is possible to easily manufacture a resin double-sealed semiconductor device and to provide a semiconductor device which can obtain a more reliable electromagnetic wave shielding effect. I can do it.
【図１】この発明の第１の実施例である樹脂封止型半導
体装置の構成を示す断面図である。FIG. 1 is a sectional view showing a configuration of a resin-sealed semiconductor device according to a first embodiment of the present invention.
【図２】第１の実施例であるセラミック封止型半導体装
置の構成を示す断面図である。FIG. 2 is a sectional view showing a configuration of a ceramic-sealed semiconductor device according to a first embodiment.
【図３】この発明の第２の実施例である樹脂封止型半導
体装置の構成を示す断面図である。FIG. 3 is a sectional view showing a configuration of a resin-sealed semiconductor device according to a second embodiment of the present invention.
【図４】第２の実施例の変形例の構成を示す断面図であ
る。FIG. 4 is a sectional view showing a configuration of a modified example of the second embodiment.
【図５】第２の実施例の変形例の構成を示す断面図であ
る。FIG. 5 is a sectional view showing a configuration of a modified example of the second embodiment.
【図６】第２の実施例の変形例の構成を示す断面図であ
る。FIG. 6 is a cross-sectional view showing a configuration of a modified example of the second embodiment.
【図７】この発明の第２の実施例の樹脂を２重封止法に
よって封止した半導体装置の断面図を示す。FIG. 7 shows a cross-sectional view of a semiconductor device in which a resin according to a second embodiment of the present invention is sealed by a double sealing method.
【図８】この発明の製造方法の工程を説明する図であ
る。FIG. 8 is a diagram illustrating a step of the manufacturing method of the present invention.
【図９】従来の樹脂封止型半導体装置の構成を示す断面
図である。FIG. 9 is a cross-sectional view showing a configuration of a conventional resin-encapsulated semiconductor device.
【図１０】従来の電磁波対策を説明する図である。FIG. 10 is a diagram illustrating a conventional electromagnetic wave countermeasure.
１ 半導体装置 ２ ダイパット ３ 半導体素子 ４ リードフレーム ５ 金属ワイヤ ６ 封止樹脂 ７ 電磁波吸収剤 ８ 絶縁性材料 ９ 電磁波吸収剤を混入した樹脂 １２ 小さい金型 １４ 大きい金型 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Die pad 3 Semiconductor element 4 Lead frame 5 Metal wire 6 Sealing resin 7 Electromagnetic wave absorber 8 Insulating material 9 Resin mixed with electromagnetic wave absorber 12 Small mold 14 Large mold
Claims (3)
グ材料に電磁波ノイズを吸収する電磁波吸収剤を混入さ
せたことを特徴とする半導体装置。1. A semiconductor device, wherein an electromagnetic wave absorber that absorbs electromagnetic wave noise is mixed in a sealing material or a coating material of a semiconductor element.
材料またはコーティング材料よりも融点の高い絶縁性材
料でコーティングした請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the surface of the electromagnetic wave absorber is coated with an insulating material having a melting point higher than that of the sealing material or coating material for the semiconductor element.
封止した後、この封止された半導体装置を大きい金型に
セットし、電磁波吸収剤を混入した封止材料を用いて再
度封止することを特徴とする半導体装置の製造方法。3. A semiconductor device set in a small mold is sealed, then this sealed semiconductor device is set in a large mold, and sealed again using a sealing material mixed with an electromagnetic wave absorber. A method of manufacturing a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3288891A JPH05129476A (en) | 1991-11-05 | 1991-11-05 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3288891A JPH05129476A (en) | 1991-11-05 | 1991-11-05 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05129476A true JPH05129476A (en) | 1993-05-25 |
Family
ID=17736118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3288891A Pending JPH05129476A (en) | 1991-11-05 | 1991-11-05 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05129476A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800804B2 (en) | 2001-06-12 | 2004-10-05 | Nitto Denko Corporation | Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition |
| JP2005217221A (en) * | 2004-01-30 | 2005-08-11 | Sony Corp | Semiconductor package and method for manufacturing the same |
| JP2008001757A (en) * | 2006-06-20 | 2008-01-10 | Kyocera Chemical Corp | Resin composition for semiconductor sealing use and resin-sealed type semiconductor device |
| JP2010071724A (en) * | 2008-09-17 | 2010-04-02 | Mitsubishi Electric Corp | Resin molded semiconductor sensor and method of manufacturing the same |
| US8884424B2 (en) | 2010-01-13 | 2014-11-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| US9349611B2 (en) | 2010-03-22 | 2016-05-24 | Advanced Semiconductor Engineering, Inc. | Stackable semiconductor package and manufacturing method thereof |
| US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
| WO2020241468A1 (en) * | 2019-05-30 | 2020-12-03 | 東洋紡株式会社 | Resin composition for insert molding, sealing body for electronic component, and method for producing sealing body for electronic component |
-
1991
- 1991-11-05 JP JP3288891A patent/JPH05129476A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6800804B2 (en) | 2001-06-12 | 2004-10-05 | Nitto Denko Corporation | Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition |
| JP2005217221A (en) * | 2004-01-30 | 2005-08-11 | Sony Corp | Semiconductor package and method for manufacturing the same |
| JP2008001757A (en) * | 2006-06-20 | 2008-01-10 | Kyocera Chemical Corp | Resin composition for semiconductor sealing use and resin-sealed type semiconductor device |
| JP2010071724A (en) * | 2008-09-17 | 2010-04-02 | Mitsubishi Electric Corp | Resin molded semiconductor sensor and method of manufacturing the same |
| US8884424B2 (en) | 2010-01-13 | 2014-11-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| US9196597B2 (en) | 2010-01-13 | 2015-11-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| US9349611B2 (en) | 2010-03-22 | 2016-05-24 | Advanced Semiconductor Engineering, Inc. | Stackable semiconductor package and manufacturing method thereof |
| US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
| WO2020241468A1 (en) * | 2019-05-30 | 2020-12-03 | 東洋紡株式会社 | Resin composition for insert molding, sealing body for electronic component, and method for producing sealing body for electronic component |
| JP2020193304A (en) * | 2019-05-30 | 2020-12-03 | 東洋紡株式会社 | Resin composition for insert molding, electronic part-sealed body, and method for producing electronic part-sealed body |
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