JP6466761B2 - 半導体装置、及び電源供給方法 - Google Patents
半導体装置、及び電源供給方法 Download PDFInfo
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- JP6466761B2 JP6466761B2 JP2015071463A JP2015071463A JP6466761B2 JP 6466761 B2 JP6466761 B2 JP 6466761B2 JP 2015071463 A JP2015071463 A JP 2015071463A JP 2015071463 A JP2015071463 A JP 2015071463A JP 6466761 B2 JP6466761 B2 JP 6466761B2
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- 239000004065 semiconductor Substances 0.000 title claims description 201
- 238000000034 method Methods 0.000 title claims description 16
- 238000010586 diagram Methods 0.000 description 11
- 230000007704 transition Effects 0.000 description 5
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 101710170230 Antimicrobial peptide 1 Proteins 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017545—Coupling arrangements; Impedance matching circuits
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Power Sources (AREA)
- Dc-Dc Converters (AREA)
- Control Of Electrical Variables (AREA)
Description
Claims (9)
- 予め定めた電圧値以上の電圧を出力するまでの時間が外部環境に応じて変動する電源が接続される入力端子と、
前記入力端子から電源が供給される電源部と、
被駆動用半導体装置に電源を供給する電源供給端子と、
前記電源部と前記電源供給端子との接続を制御するスイッチと、
前記入力端子から供給される電源の電圧を降下し、前記電源供給端子に前記降下した電圧を供給する電圧調整部と、
を備えた半導体装置。 - 被駆動用半導体装置に接続され、前記被駆動用半導体装置に駆動準備を指示するスタンバイ信号を出力する出力端子と、
前記スタンバイ信号を生成し、生成した前記スタンバイ信号を前記出力端子から出力するタイミングを制御する制御部と、
を更に備えた請求項1記載の半導体装置。 - 前記制御部は、前記入力端子から供給される電源の電圧値に応じて前記電源部及び前記電圧調整部の何れか一方から電源が供給される出力部を介して、前記出力端子と接続され、
前記出力部は、前記制御部から入力された前記スタンバイ信号を前記出力端子に出力する
請求項2記載の半導体装置。 - 前記制御部は、前記入力端子から供給される電源の電圧値に応じて前記スイッチをオン又はオフにするスイッチ状態制御信号を前記スイッチに出力し、前記スイッチのオンオフ状態を制御する
請求項2又は請求項3に記載の半導体装置。 - 前記制御部は、前記スタンバイ信号及び前記スイッチ状態制御信号を出力するリセット回路と、 前記リセット回路からの前記スタンバイ信号により内部動作を制御準備状態に移行する制御回路と、を含む
請求項4記載の半導体装置。 - 前記リセット回路に、前記入力端子から電源が供給され、
前記制御回路に、前記入力端子から電源が供給される制御回路電源部を介して電源が供給される
請求項5記載の半導体装置。 - 前記入力端子から前記リセット回路に供給される電源の電圧値が第1の閾値未満の場合、前記スイッチをオフにした状態で前記制御回路及びリセット回路の動作が停止し、
前記入力端子から前記リセット回路に供給される電源の電圧値が前記第1の閾値以上、かつ、前記第1の閾値より大きい第2の閾値未満の場合、前記リセット回路は、前記スタンバイ信号を前記制御回路に出力すると共に、前記スイッチ状態制御信号を前記スイッチに出力して前記スイッチをオフに制御し、
前記入力端子から前記リセット回路に供給される電源の電圧値が前記第2の閾値以上の場合、前記リセット回路は、前記制御回路に出力している前記スタンバイ信号を停止すると共に、前記スイッチ状態制御信号を前記スイッチに出力し、前記スイッチをオン又はオフの予め定めた状態に制御する
請求項6記載の半導体装置。 - 前記電圧調整部がダイオードを含む
請求項1〜請求項7の何れか1項に記載の半導体装置。 - 予め定めた電圧値以上の電圧を出力するまでの時間が外部環境に応じて変動する電源が接続される入力端子と、
前記入力端子から電源が供給される電源部と、
被駆動用半導体装置に電源を供給する電源供給端子と、
前記電源部と前記電源供給端子との接続を制御するスイッチと、
前記入力端子から電源が供給される電圧調整部と、
を備える半導体装置の前記入力端子に供給された電源の電圧が、予め定めた閾値より低い場合に、前記スイッチをオフにし、前記電圧調整部から前記電源供給端子に電圧を供給する
処理を含む前記電源供給端子への電源供給方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015071463A JP6466761B2 (ja) | 2015-03-31 | 2015-03-31 | 半導体装置、及び電源供給方法 |
CN201610169094.4A CN106024777B (zh) | 2015-03-31 | 2016-03-23 | 半导体装置以及电源供给方法 |
US15/082,454 US9740219B2 (en) | 2015-03-31 | 2016-03-28 | Semiconductor device and power source supply method description |
US15/653,599 US10838442B2 (en) | 2015-03-31 | 2017-07-19 | Semiconductor device and power source supply method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015071463A JP6466761B2 (ja) | 2015-03-31 | 2015-03-31 | 半導体装置、及び電源供給方法 |
Publications (2)
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JP2016192058A JP2016192058A (ja) | 2016-11-10 |
JP6466761B2 true JP6466761B2 (ja) | 2019-02-06 |
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Country Status (3)
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US (2) | US9740219B2 (ja) |
JP (1) | JP6466761B2 (ja) |
CN (1) | CN106024777B (ja) |
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JP6466761B2 (ja) * | 2015-03-31 | 2019-02-06 | ラピスセミコンダクタ株式会社 | 半導体装置、及び電源供給方法 |
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2015
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2016
- 2016-03-23 CN CN201610169094.4A patent/CN106024777B/zh active Active
- 2016-03-28 US US15/082,454 patent/US9740219B2/en active Active
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Also Published As
Publication number | Publication date |
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US9740219B2 (en) | 2017-08-22 |
US10838442B2 (en) | 2020-11-17 |
US20170315571A1 (en) | 2017-11-02 |
US20160291617A1 (en) | 2016-10-06 |
CN106024777B (zh) | 2021-09-28 |
JP2016192058A (ja) | 2016-11-10 |
CN106024777A (zh) | 2016-10-12 |
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