JP6295135B2 - Dicing die bond film - Google Patents

Description

The present invention relates to a dicing die bond film.

Conventionally, in a dicing process for dividing a semiconductor wafer into pieces, a blade dicing method is used in which the semiconductor wafer is cut and cut with a rotating blade.

Recently, a laser processing is performed on a semiconductor wafer mounted on a wafer to form a fragile layer inside the semiconductor wafer, and then a method of cleaving the semiconductor wafer by expanding a dicing tape, or a fragile layer is formed. A method of cleaving a semiconductor wafer by mounting the semiconductor wafer and then expanding a dicing tape has been adopted (for example, see Patent Documents 1 and 2). When using a dicing die bond film in these methods, it is necessary to cleave the die bond film. For this reason, a dicing die-bonding film that can be easily cleaved is desired.

JP 2002-192370 A JP 2003-338467 A

As shown in FIG. 14, by expanding the dicing tape 201, the peripheral portion 201 b extends well, and therefore the peripheral portion 201 b sags after the expansion is unwound. If the slack in the peripheral portion 201b is left unattended, the semiconductor chips 205 may come into contact with each other.

Further, as shown in FIG. 15, the non-contact section 201d that does not contact the die bonding chip 202 is expanded during the expansion, but the semiconductor chip 205 is in contact with each other because the non-contact section 201d contracts after the expansion is released. There is.

An object of the present invention is to provide a dicing tape that solves the above-described problems, can remove slack in the peripheral portion, and can prevent contact between semiconductor chips.

The present invention includes a die bond film, a laminated portion disposed on the die bond film, and a dicing tape including a peripheral portion disposed around the laminated portion, and the shrinkage ratio of the peripheral portion at 130 ° C. to 160 ° C. is 0.00. It is related with the dicing die-bonding film which is 1% or more.

The dicing die-bonding film of the present invention can remove slack in the peripheral part by heating the peripheral part, and can prevent contact between semiconductor chips.

The shrinkage rate can be calculated by the following formula.
Shrinkage rate = ((interval of vote lines before contraction−interval of vote lines after contraction) / interval of vote lines before contraction) × 100

Usually, the shrinkage rate includes a first shrinkage rate in the MD direction and a second shrinkage rate in the TD direction. The first shrinkage rate is preferably less than 5 times the second shrinkage rate. The absolute value of the difference between the first shrinkage rate and the second shrinkage rate is preferably 10% or less. This is because the anisotropy is small and the effect of preventing contact between semiconductor chips is high.

It is preferable that the dicing tape is not broken after being left at 130 ° C. to 160 ° C. for 5 minutes in a state of being stretched to 200%. Thereby, the heating temperature when heating a peripheral part can be set high.

It is preferable that the elongation at break of the dicing tape at 23 ° C. is 500% or more. This is because the expand amount can be increased and the semiconductor wafer can be easily divided.

The dicing tape preferably has a yield point at an elongation of 1% to 200% when stretched at −15 ° C. and a tensile speed of 50 mm / min. Thereby, it is possible to prevent the dicing tape from returning to the shape before expansion, and the interval between the semiconductor chips can be maintained.

The dicing die-bonding film of the present invention is a method for manufacturing a semiconductor device including a step of dividing a die-bonding film and a semiconductor wafer by expanding the laminate including the dicing die-bonding film and the semiconductor wafer disposed on the die-bonding film. It can be used suitably.

The dicing die-bonding film of the present invention is suitable for a method of manufacturing a semiconductor device including a step of dividing a die-bonding film by expanding a dicing die-bonding film and a divided body including a plurality of semiconductor chips arranged on the die-bonding film. Can be used for

ADVANTAGE OF THE INVENTION According to this invention, the dicing tape which can remove the slack of a peripheral part and can prevent contact between semiconductor chips can be provided.

It is a schematic sectional drawing of a dicing die-bonding film. It is a perspective view which shows the outline of a mode that a modified area | region is formed in the inside of a semiconductor wafer with a laser beam. It is a schematic sectional drawing of a laminated body. It is sectional drawing which shows the outline of a mode that the laminated body was fixed to the wafer expansion apparatus. It is sectional drawing which shows the outline of a mode that the laminated body was expanded. It is a schematic sectional drawing which expands and shows the dicing tape in an expand partially. It is sectional drawing which shows the outline of the mode of the dicing tape by which the expanded was unwound. It is a schematic sectional drawing of a to-be-adhered body with a semiconductor chip. It is a schematic sectional drawing of a sealing thing. It is sectional drawing which shows the outline of a mode that a groove | channel is formed in a semiconductor wafer. It is sectional drawing which shows the outline of a mode that a semiconductor wafer is back-ground. It is sectional drawing which shows the outline of a mode that the chip fixed body has been arrange | positioned on the dicing die-bonding film. It is sectional drawing which shows the outline of a mode that the division body was fixed to the wafer expansion apparatus. It is sectional drawing which shows the outline of a mode that the dicing tape was expanded. It is a schematic sectional drawing which expands and shows the dicing tape in an expand partially.

The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

[Embodiment 1]
(Dicing die bond film 10)
As shown in FIG. 1, the dicing die bond film 10 includes a die bond film 3 and a dicing tape 1 arranged on the die bond film 3. The dicing tape 1 includes a laminated portion 1a arranged on the die bond film 3 and a peripheral portion 1b arranged around the laminated portion 1a. The laminated portion 1 a is in contact with the die bond film 3. On the other hand, the peripheral portion 1 b is not in contact with the die bond film 3.

The laminated portion 1 a and the peripheral portion 1 b include a base material 11 and an adhesive layer 12 disposed on the base material 11. That is, it can be said that the dicing tape 1 includes the base material 11 and the pressure-sensitive adhesive layer 12 disposed on the base material 11.

The peripheral portion 1b contracts when heated. That is, the peripheral part 1b has heat shrinkability.

The shrinkage rate at 130 ° C. to 160 ° C. of the peripheral portion 1b is 0.1% or more, preferably 1% or more. Since it is 0.1% or more, it is possible to remove the slack in the peripheral portion 1b by heating the peripheral portion 1b, and to prevent contact between the semiconductor chips. On the other hand, the upper limit of the shrinkage rate is not particularly limited. The shrinkage rate is preferably 50% or less, more preferably 30% or less. Since it is 50% or less, it is possible to prevent tearing when heated and contracted.

The shrinkage rate can be calculated by the following formula.
Shrinkage rate = ((interval of vote lines before contraction−interval of vote lines after contraction) / interval of vote lines before contraction) × 100

The dicing tape 1 usually has anisotropy in shrinkage. Therefore, the shrinkage rate in the MD (Machine Direction) direction and the shrinkage rate in the TD (Transverse Direction) direction will be described. The MD direction is the flow direction, and the TD direction is a direction perpendicular to the MD direction.

The shrinkage in the MD direction (hereinafter also referred to as the first shrinkage) at 130 ° C. to 160 ° C. of the peripheral portion 1b is 0.1% or more, preferably 1% or more. On the other hand, the first shrinkage rate is preferably 50% or less, more preferably 30% or less.

The first contraction rate can be calculated by the following formula.
First contraction rate = ((MD-line spacing before contraction−MD-direction spacing after contraction) / MD-direction spacing before contraction) × 100

The first shrinkage rate can be measured by the method described in the examples.

The first shrinkage rate can be adjusted by the material of the base material 11 and the film forming method of the base material 11. Especially, the film forming method of the base material 11 is important. For example, the first shrinkage rate can be increased by stretching the base material 11 in the MD direction.

The shrinkage rate in the TD direction (hereinafter also referred to as the second shrinkage rate) at 130 ° C. to 160 ° C. of the peripheral portion 1b is 0.1% or more, preferably 1% or more. On the other hand, the second shrinkage rate is preferably 50% or less, more preferably 30% or less.

The second contraction rate can be calculated by the following formula.
Second contraction rate = ((interval of vote lines in TD direction before contraction−interval of vote lines in TD direction after contraction) / interval of vote lines in TD direction before contraction) × 100

The second shrinkage rate can be measured by the method described in the examples.

The second shrinkage rate can be adjusted by the material of the base material 11 and the film forming method of the base material 11. Especially, the film forming method of the base material 11 is important. For example, the second shrinkage rate can be increased by stretching the base material 11 in the TD direction.

The first shrinkage rate is preferably less than 5 times the second shrinkage rate, and more preferably less than 3 times. If it is less than 5 times, the anisotropy is small and the effect of preventing contact between the semiconductor chips is high. On the other hand, the first contraction rate is preferably 0.2 times or more of the second contraction rate.

The absolute value of the difference between the first shrinkage rate and the second shrinkage rate is preferably 10% or less, more preferably 5% or less. If it is 10% or less, the anisotropy is small and the effect of preventing contact between the semiconductor chips is high. The lower limit of the absolute value of the difference between the first shrinkage rate and the second shrinkage rate is not particularly limited. The lower limit of the absolute value of the difference between the first shrinkage rate and the second shrinkage rate is, for example, 0%.

The dicing tape 1 preferably has a yield point at an elongation of 1% to 200% when stretched at −15 ° C. and a tensile speed of 50 mm / min. That is, it is preferable that the dicing tape 1 yields when stretched by 1% to 200% at −15 ° C. and a tensile speed of 50 mm / min. When the dicing tape 1 yields, the dicing tape 1 can be prevented from returning to the shape before expansion, and the distance between the semiconductor chips can be maintained.

In the dicing tape 1, the elongation at break when stretched at 23 ° C. and a tensile speed of 50 mm / min is preferably 500% or more. If it is 500% or more, the amount of expansion can be increased, and the semiconductor wafer can be easily divided. If the elongation at break is small, the dicing tape 1 may be broken by the expand. On the other hand, the upper limit of the elongation at break of the dicing tape 1 is not particularly limited, and is, for example, 3000% or less.

It is preferable that the dicing tape 1 is not torn after being left at 130 ° C. to 160 ° C. for 5 minutes in a state of being stretched to 200%. Thereby, the heating temperature when heating the peripheral part 1b can be set high.

The laminated portion 1a also has heat shrinkability. A suitable shrinkage rate of the laminated portion 1a is the same as the shrinkage rate described in the peripheral portion 1b.

Examples of the substrate 11 include a polyethylene terephthalate film, a polyethylene film, a polystyrene film, a polypropylene film, a polyamide film, a polyurethane film, a polyvinylidene chloride film, and a polyvinyl chloride film.

As the substrate 11, an unstretched film, a uniaxially stretched film, a biaxially stretched film, and the like can be used.

The surface of the base material 11 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed.

The thickness of the substrate 11 is not particularly limited and can be determined as appropriate. The thickness of the base material 11 is preferably 25 μm or more, more preferably 30 μm or more. The thickness of the base material 11 is preferably 200 μm or less, more preferably 150 μm or less.

It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 12, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. As pressure-sensitive adhesives, acrylic adhesives based on acrylic polymers are used as the base polymer from the standpoint of cleanability of electronic components that are difficult to contaminate such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. preferable.

Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopropyl ester). Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, C1-C30, especially C4-C18 linear or branched alkyl esters of alkyl groups such as octadecyl ester and eicosyl ester) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, etc. One or acrylic polymer using two or more of the monomer component cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. May be. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sti Contains sulfonic acid groups such as sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalene sulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

Furthermore, since the acrylic polymer is cross-linked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary, in addition to the above components.

The pressure-sensitive adhesive layer 12 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays.

By curing the pressure-sensitive adhesive layer 12 of the laminated part 1a, the adhesive force of the pressure-sensitive adhesive layer 12 of the laminated part 1a can be reduced. In this case, the wafer ring can be fixed to the uncured pressure-sensitive adhesive layer 12 in the peripheral portion 1b.

That is, when the pressure-sensitive adhesive layer 12 is formed of a radiation curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer 12 in the laminated portion 1a should be designed so that the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 12 in the peripheral portion 1b. Is preferred.

As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation curable pressure-sensitive adhesive include an addition-type radiation curable pressure-sensitive adhesive in which a radiation-curable monomer component or oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or rubber-based pressure-sensitive adhesive. An agent can be illustrated.

Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. It is preferable because an adhesive layer having a layered structure can be formed.

As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfo Aromatic sulfonyl chloride compounds such as luchloride; Photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Examples of the radiation curable pressure-sensitive adhesive include photopolymerizable compounds such as an addition polymerizable compound having two or more unsaturated bonds and an alkoxysilane having an epoxy group disclosed in JP-A-60-196956. And rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing photopolymerization initiators such as carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt-based compounds.

The radiation curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by radiation irradiation, if necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 12 by irradiation with radiation, only the irradiated portion can be colored. The compound that is colored by irradiation with radiation is a colorless or light color compound before irradiation with radiation, but becomes a color by irradiation with radiation, and examples thereof include leuco dyes. The use ratio of the compound colored by radiation irradiation can be set as appropriate.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but is preferably about 1 μm to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the die bond film 3. Preferably they are 2 micrometers-30 micrometers, Furthermore, 5 micrometers-25 micrometers are preferable.

The die bond film 3 has thermosetting properties.

The die bond film 3 preferably contains a thermoplastic resin. As thermoplastic resins, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplasticity Examples thereof include polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

In addition, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethylcyclo Hydroxyl group-containing monomers such as (xyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in the said numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

The content of the thermoplastic resin in the die bond film 3 is preferably 5% by weight or more, more preferably 10% by weight or more. The content of the thermoplastic resin is preferably 50% by weight or less, more preferably 30% by weight or less.

The die bond film 3 preferably contains a thermosetting resin. Thereby, thermal stability can be improved.

Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. In particular, an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is preferable. Moreover, a phenol resin is preferable as the curing agent for the epoxy resin.

The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type. Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

The content of the thermosetting resin in the die bond film 3 is preferably 10% by weight or more, more preferably 40% by weight or more. The content of the thermosetting resin is preferably 90% by weight or less, more preferably 80% by weight or less.

When the die bond film 3 is crosslinked to some extent in advance, it is preferable to add a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

A conventionally well-known thing can be employ | adopted as a crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

In addition, an inorganic filler can be appropriately blended in the die bond film 3 according to its use. The blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the elastic modulus, and the like. Examples of inorganic fillers include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead, Examples thereof include various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbon.

In addition to the inorganic filler, other additives can be appropriately blended in the die bond film 3 as necessary. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide.

The die bond film 3 can be manufactured by a normal method. For example, an adhesive composition solution containing each of the above components is prepared, and the adhesive composition solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried. Thus, the die bond film 3 can be manufactured.

Although it does not specifically limit as a solvent used for adhesive composition solution, The organic solvent which can melt | dissolve, knead | mix or disperse | distribute each said component uniformly is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. The application method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, and screen printing. Of these, a die coater is preferable in terms of high uniformity of coating thickness.

As the base material separator, polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine-type release agent or a long-chain alkyl acrylate release agent can be used. Examples of the method for applying the adhesive composition solution include roll coating, screen coating, and gravure coating. Moreover, the drying conditions of a coating film are not specifically limited, For example, it can carry out in drying temperature 70-160 degreeC and drying time 1-5 minutes.

As a method for producing the die bond film 3, for example, a method for producing the die bond film 3 by mixing the respective components with a mixer and press-molding the obtained mixture is also suitable. A planetary mixer etc. are mentioned as a mixer.

The thickness of the die bond film 3 is not particularly limited, but is preferably 5 μm or more, and more preferably 15 μm or more. When the thickness is less than 5 μm, a portion where the warped semiconductor wafer or the semiconductor chip does not adhere may occur, and the adhesion area may become unstable. Further, the thickness of the die bond film 3 is preferably 100 μm or less, and more preferably 50 μm or less. If it exceeds 100 μm, the die-bonding film 3 may protrude excessively due to the load of die attachment, and the pad may be contaminated.

The die bond film 3 can be used as a die attach film for bonding an adherend such as a lead frame and a semiconductor chip. Examples of the adherend include a lead frame, an interposer, and a semiconductor chip.

The die bond film 3 of the dicing die bond film 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 3 until it is put into practical use. The separator is peeled off when the semiconductor wafer is stuck on the die bond film 3. As the separator, it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.

The dicing die bond film 10 can be manufactured by a normal method. For example, the dicing die bond film 10 can be manufactured by bonding the adhesive layer 12 of the dicing tape 1 and the die bond film 3 together.

The dicing die-bonding film 10 includes a step of dividing the die-bonding film 3 and the semiconductor wafer by expanding a laminate including the dicing die-bonding film 10 and the semiconductor wafer disposed on the die-bonding film 3. It can use suitably for.

The dicing die-bonding film 10 includes a dicing die-bonding film 3 and a semiconductor device manufacturing method including a step of dividing the die-bonding film 3 by expanding a divided body including a plurality of semiconductor chips disposed on the die-bonding film 3. Can be suitably used.

[Method for Manufacturing Semiconductor Device]
As shown in FIG. 2, the condensing point is aligned inside the semiconductor wafer, the laser beam 100 is irradiated along the lattice-shaped division planned line 4L, and the modified region 41 is formed inside the semiconductor wafer by ablation by multiphoton absorption. Form. Thereby, the semiconductor wafer 4 is obtained. The semiconductor wafer 4 includes a modified region (hereinafter also referred to as a modified portion or a fragile layer) 41 and a non-modified region (hereinafter also referred to as a non-modified portion or a non-modified layer) that is the remaining region of the modified region 41. 42). That is, the semiconductor wafer 4 includes a non-modified region 42 and a modified region 41 provided along the planned division line 4L.

The irradiation conditions of the laser beam 100 can be adjusted as appropriate within the range of the following conditions, for example.
(A) Laser beam 100
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser light wavelength: 100% or less (C) Moving speed of a table on which a semiconductor wafer is placed

The method for forming the modified region 41 by irradiation with the laser beam 100 is described in detail in Japanese Patent No. 3408805, Japanese Patent Application Laid-Open No. 2003-338567, and the like, and detailed description thereof is omitted here. I will do it.

Both sides of the semiconductor wafer 4 are defined by a front surface (front noodle) and a back surface facing the front surface. The surface is a surface on which a circuit is provided. On the other hand, the back surface is a surface on which no circuit is provided.

The back surface of the semiconductor wafer 4 is ground to reduce the thickness of the semiconductor wafer 4.

As shown in FIG. 3, the semiconductor wafer 4 is pressure-bonded onto the die bond film 3 to obtain a laminate 21. The laminate 21 includes a dicing die bond film 10 and a semiconductor wafer 4 disposed on the dicing die bond film 10.

As shown in FIG. 4, after the dicing ring 31 is attached to the dicing tape 1, the stacked body 21 is fixed to the wafer expansion device 32.

As shown in FIG. 5, the dicing tape 1 is expanded by raising the push-up portion 33 disposed below the laminated body 21, and the semiconductor wafer 4 is divided starting from the modified region 41, and the die bond film 3 is Divide. Thereby, the chip | tip 2 for die bonding provided with the die-bonding agent 22 arrange | positioned on the semiconductor chip 5 and the semiconductor chip 5 is obtained. Even after the semiconductor wafer 4 and the die bond film 3 are divided, the expansion is continued and the dicing tape 1 is yielded. Thereby, it is possible to prevent the interval between the die bonding chips 2 from being narrowed after the expansion is unwound, and contact between the die bonding chips 2 can be prevented.

As shown in FIG. 6, the deformation of the contact section 1c in contact with the die bonding chip 2 is small or not in the stacked portion 1a in the expand. This is because the deformation of the contact section 1 c is restrained by the die bonding chip 2. On the other hand, the deformation of the non-contact section 1d that does not contact the die bonding chip 2 is larger than that of the contact section 1c.

Therefore, the contact section 1c does not yield due to the expansion. On the other hand, the non-contact section 1d yields due to the expansion. Usually, the peripheral portion 1b also yields.

Whether the dicing tape 1 has yielded can be determined by, for example, the following method.

Judgment method After unfolding the expand, the dicing tape 1 is held at 25 ° C. for 10 minutes. After the holding, the distance between the die bonding chips 2 is measured. If the distance after the holding is 1 μm or more, it can be determined that the dicing tape 1 has yielded.

The expanding is preferably performed by a cool expanding method. Specifically, it is preferable to expand at 10 ° C. or less, and it is more preferable to expand at 0 ° C. or less. The die-bonding film 3 can be favorably divided as it is 10 degrees C or less. The lower limit of temperature is not specifically limited, For example, it is -20 degreeC or more.

The expanding speed (hereinafter also referred to as the speed at which the push-up portion 33 rises) is preferably 0.1 mm / second or more, more preferably 1 mm / second or more. If it is 0.1 mm / second or more, it can be easily divided. On the other hand, the upper limit of the expanding speed is not particularly limited.

As shown in FIG. 7, the push-up portion 33 is lowered to unwind the expand. After unwinding the expand, the peripheral portion 1b sags. This is because the peripheral portion 1b extends well due to the expansion. In addition, since the deformation | transformation of the lamination | stacking part 1a is restrained by the die-bonding film 3, there are few slacks of the lamination | stacking part 1a compared with the peripheral part 1b.

Next, the peripheral portion 1b is contracted by heating. By contracting the peripheral portion 1b, it is possible to remove the slack in the peripheral portion 1b and prevent the die bonding chips 2 from contacting each other.

The heating temperature of the peripheral portion 1b is preferably 100 ° C. or higher, more preferably 120 ° C. or higher. When the temperature is 100 ° C. or higher, the peripheral portion 1b can be easily contracted. The heating temperature of the peripheral portion 1b is preferably 180 ° C. or lower, more preferably 170 ° C. or lower. Breakage of the dicing tape 1 can be prevented when it is 180 ° C. or lower.

Next, when the pressure-sensitive adhesive layer 12 is an ultraviolet curable type, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with ultraviolet rays. Thereby, the adhesive force with respect to the chip | tip 2 for die-bonding of the adhesive layer 12 can be reduced. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. When the pressure-sensitive adhesive layer 12 is not an ultraviolet curable type, it is not necessary to irradiate the pressure-sensitive adhesive layer 12 with ultraviolet rays.

The die bonding chip 2 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each die bonding chip 2 with a needle and picking up the pushed die bonding chip 2 with a pickup device can be mentioned.

As shown in FIG. 8, the die bonding chip 2 is bonded and fixed on the adherend 6 to obtain an adherend 61 with a semiconductor chip. The adherend 61 with a semiconductor chip includes an adherend 6, a die bond agent 22 disposed on the adherend 6, and a semiconductor chip 5 disposed on the die bond agent 22.

The die attach temperature is preferably 80 ° C. or higher, more preferably 90 ° C. or higher. The die attach temperature is preferably 150 ° C. or lower, more preferably 130 ° C. or lower.

Subsequently, the die bonding agent 22 is thermally cured by heating the adherend 61 with a semiconductor chip, and the semiconductor chip 5 and the adherend 6 are fixed.

In addition, it is preferable to thermoset the die-bonding agent 22 by heating the to-be-adhered body 61 with a semiconductor chip under pressure. By thermally curing the die bond agent 22 under pressure, voids existing between the die bond agent 22 and the adherend 6 can be easily eliminated.

Examples of a method of heating under pressure include a method of heating the adherend 61 with a semiconductor chip disposed in a chamber filled with an inert gas.
The pressure of the pressurized atmosphere is preferably 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, more preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, and further preferably 5 kg. / Cm ² (4.9 × 10 ⁻¹ MPa) or more. The void which exists between the die-bonding agent 22 and the to-be-adhered body 6 can be easily eliminated as it is 0.5 kg / cm < ² > or more. The pressure of the pressurized atmosphere is preferably 20kg ^/ cm 2 (1.96MPa), more preferably 18kg ^/ cm 2 (1.77MPa) or less, more preferably not more than 15kg ^/ cm 2 (1.47MPa). The protrusion of the die-bonding agent 22 due to excessive pressurization can be suppressed as it is 20 kg / cm ² or less.

The heating temperature when heating under pressure is preferably 80 ° C or higher, more preferably 100 ° C or higher, still more preferably 120 ° C or higher, and particularly preferably 170 ° C or higher. When the temperature is 80 ° C. or higher, the die bond agent 22 can have an appropriate hardness, and voids can be effectively eliminated by pressure curing. The heating temperature is preferably 260 ° C. or lower, more preferably 200 ° C. or lower, more preferably 180 ° C. or lower. The decomposition | disassembly of the die-bonding agent 22 can be prevented as it is 260 degrees C or less.

The heating time is preferably 0.1 hour or longer, more preferably 0.2 hour or longer, and further preferably 0.5 hour or longer. When it is 0.1 hour or longer, the effect of pressurization can be sufficiently obtained. The heating time is preferably 24 hours or less, more preferably 3 hours or less, and even more preferably 1 hour or less.

As shown in FIG. 9, a wire bonding process is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7. As the bonding wire 7, for example, a gold wire, an aluminum wire or a copper wire is used. The temperature during wire bonding is preferably 80 ° C. or higher, more preferably 120 ° C. or higher, and the temperature is preferably 250 ° C. or lower, more preferably 175 ° C. or lower. The heating time is several seconds to several minutes (for example, 1 second to 1 minute). The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 ° C. or higher, more preferably 170 ° C. or higher, and the heating temperature is preferably 185 ° C. or lower, more preferably 180 ° C. or lower.

If necessary, the sealed material may be further heated (post-curing step). Thereby, the sealing resin 8 which is insufficiently cured in the sealing process can be completely cured. The heating temperature can be set as appropriate.

The sealed object can be used as a semiconductor device.

As described above, in the first embodiment, a semiconductor device can be manufactured by a method including the step of expanding the dicing tape 1 of the laminate 21. The process of expanding the dicing tape 1 includes, for example, a step of dividing the die bonding film 3 and the semiconductor wafer 4 to form a die bonding chip 2 by expanding the dicing tape 1 and further expanding the dicing tape 1. And yielding the dicing tape 1.

The method of Embodiment 1 can further include a step of unwinding the dicing tape 1 after the step of expanding the dicing tape 1, a step of heating the peripheral portion 1b after the step of unwinding the expand, and the like.
Note that the semiconductor device manufacturing method described in the first embodiment may be referred to as stealth dicing before grind.

(Modification 1)
In the first embodiment, the laminated part 1 a and the peripheral part 1 b include a base material 11 and an adhesive layer 12 disposed on the base material 11. In the first modification, the laminated portion 1a includes the first base material and the first pressure-sensitive adhesive layer disposed on the first base material, and the peripheral portion 1b is disposed on the second base material and the second base material. A second pressure-sensitive adhesive layer.

(Modification 2)
In the first embodiment, the semiconductor wafer 4 including the modified region 41 is pressure-bonded onto the dicing die bond film 10. In Modification 2, a semiconductor wafer is pressure-bonded to the dicing die-bonding film 10. Next, the modified region 41 is formed inside the semiconductor wafer disposed on the dicing die bond film 10 to obtain the semiconductor wafer 4.

[Embodiment 2]
As shown in FIG. 10, a groove 104S is formed on a surface 104F of a semiconductor wafer with a rotating blade 111, and a semiconductor wafer 104 provided with the groove 104S is obtained. The depth of the groove 104S can be appropriately set according to the thickness of the semiconductor wafer 104 and the expansion conditions.

As shown in FIG. 11, the semiconductor wafer 104 is fixed on the protective base 112, and back grinding is performed with a grinding wheel 113 to penetrate the groove 104 </ b> S. Thereby, the chip | tip fixing body 51 provided with the semiconductor chip 5 arrange | positioned on the protective base material 112 and the protective base material 112 is obtained.
Is obtained.

As shown in FIG. 12, the chip fixed body 51 is disposed on the dicing die bond film 10 to obtain the divided body 52. The divided body 52 includes a dicing die-bonding film 10 and a semiconductor chip 5 disposed on the dicing die-bonding film 10. A protective substrate 112 is disposed on the divided body 52.

As shown in FIG. 13, the protective substrate 112 is peeled from the divided body 52. Thereafter, the divided body 52 is expanded, and the die bond film 3 is divided. Thereby, a chip for die bonding is obtained.

Suitable expanding conditions are the same as the expanding conditions described in the first embodiment.

The subsequent steps are the same as those in the first embodiment.

As described above, in the second embodiment, the semiconductor device can be suitably manufactured by the method including the step of dividing the die bond film 3 by expanding the divided body 52.

EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

[Production of dicing die bond film]
Example 1
Zeras 5053Y made by Mitsubishi Chemical was formed into a film at a set temperature of 230 ° C. with a T-die molding machine to produce a substrate A having a thickness of 80 μm and a width of 400 mm.

Next, in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device, 86.4 parts of acrylic acid-2-ethylhexyl (hereinafter also referred to as “2EHA”), acrylic acid-2- 13.6 parts of hydroxyethyl (hereinafter also referred to as “HEA”), 0.2 part of benzoyl peroxide, and 65 parts of toluene were placed in a nitrogen stream and polymerized at 61 ° C. for 6 hours. Polymer B was obtained. 14.6 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) is added to the acrylic polymer B, followed by an addition reaction treatment at 50 ° C. for 48 hours in an air stream, and the acrylic polymer B ′. Got. For 100 parts of acrylic polymer B ′, 2 parts of polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and photopolymerization initiator (trade name “Irgacure 651”, Ciba Specialty Chemicals) 5 parts) was added to obtain an adhesive composition solution. The pressure-sensitive adhesive composition solution was applied on a release treatment film and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm. Next, the substrate A was bonded onto the pressure-sensitive adhesive layer to produce a dicing tape. The obtained dicing tape includes a base material A and an adhesive layer disposed on the base material A. The dicing tape is in contact with the release processing film.

Next, 144 parts (Epicoat 1004, manufactured by JER Corporation) as epoxy resin (a), 130 parts (Epicoat 827, manufactured by JER Corporation) as epoxy resin (b), and (Mitsui Chemicals) as phenol resin (c) Co., Ltd., Millex XLC-4L) 293 parts, acrylic acid ester polymer (d) mainly composed of ethyl acrylate-methyl methacrylate (Negami Kogyo Co., Ltd., Paracron W-197CM) 100 parts, filler As (e), 200 parts of spherical silica (manufactured by Admatechs Co., Ltd., SO-25R) was dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight. This adhesive composition solution was applied onto a silicone-treated surface of a 50 μm thick PET release liner and dried at 130 ° C. for 2 minutes to produce a 40 μm thick die bond film.

After the release treatment film was peeled off from the 400 mm long × 400 mm dicing tape, a die bond film cut into a circle having a diameter of 330 mm was bonded to the center of the pressure-sensitive adhesive layer surface to produce a dicing die bond film.

[Evaluation]
The following evaluation was performed using a dicing die bond film. The results are shown in Table 1.

(MD shrinkage)
The dicing tape was obtained by removing the die bonding film from the dicing die bond film.
A strip-shaped test piece having a length of 150 mm in the MD direction and a width of 10 mm is cut out from the dicing tape, and a test line is inserted into the test piece at intervals of 100 mm. did. After cooling, the interval between the votes in the MD direction was measured, and the shrinkage rate was determined by the following formula. In the following formula, the unit of the interval between the vote lines is “mm”.
Shrinkage rate (%) = ((100 mm−interval of MD line after cooling) / 100 mm) × 100

(Shrinkage rate in TD direction)
The dicing tape was obtained by removing the die bonding film from the dicing die bond film.
A strip-shaped test piece having a length of 150 mm in the TD direction and a width of 10 mm is cut out from the dicing tape, and vote lines are inserted into the test piece at intervals of 100 mm. did. After cooling, the interval between vote lines in the TD direction was measured, and the shrinkage rate was determined by the following formula. In the following formula, the unit of the interval between the vote lines is “mm”.
Shrinkage rate (%) = ((100 mm−interval of vote line in TD direction after cooling) / 100 mm) × 100

(Elongation at break)
The dicing tape was obtained by removing the die bonding film from the dicing die bond film.
A strip-shaped test piece having a length of 100 mm and a width of 10 mm in the TD direction was cut out from the dicing tape. The test piece was pulled in the MD direction at 50 mm / min in an environment of a temperature of 23 ± 2 ° C. and a humidity of 55 ± 5% with the chuck interval of the tensile tester set to 10 mm. The specimen was pulled until it broke and the stress was measured. The elongation at break was determined from the elongation when the test piece broke. In the following formula, the unit of the distance between chucks is “mm”. When the test piece was broken at the portion sandwiched between the chucks, the measurement was repeated, and the measured value when the test piece was broken between the upper and lower chucks was adopted.
Elongation at break (%) = ((distance between chucks when the test piece breaks−10 mm) / 10 mm) × 100

(Elongation at yield point -15 ° C test)
The dicing tape was obtained by removing the die bonding film from the dicing die bond film.
A strip-shaped test piece having a length of 100 mm and a width of 10 mm in the TD direction was cut out from the dicing tape. The chuck interval of the tensile tester was set to 10 mm, and the test piece was pulled in the MD direction at 50 mm / min in an environment where the measurement temperature was −15 ± 2 ° C. The specimen was pulled until it broke and the stress was measured. The point where the stress becomes maximum was taken as the yield point, and the elongation at that time was taken as the elongation at the yield point. In the following formula, the unit of the distance between chucks is “mm”.
Elongation at yield point (%) = ((Distance between chucks at yield point−10 mm) / 10 mm) × 100

(Elongation at yield point 0 ° C test)
Except for changing the measurement temperature to 0 ± 2 ° C., the elongation at the yield point was measured in the same manner as the measurement method at the measurement temperature −15 ° C.

(Cleavage)
A silicon mirror wafer in which a fragile layer was formed with a laser was bonded to the die bond film to obtain a laminate including the dicing die bond film and the silicon mirror wafer disposed on the dicing die bond film. The laminate was placed on a dicing frame, and the laminate was expanded using a disco die separator DDS2300 to divide the silicon mirror wafer and the die bond film. After unwinding the expand, the peripheral part of the dicing tape was heated with a dryer to shrink the peripheral part. After heating, it was confirmed whether the dicing tape was loosened, the dicing tape was torn, whether all the chips were singulated, and whether the die bond film was singulated.

The cleaving conditions and heating conditions are as follows.
"Cleaving condition"
Wafer thickness: 50 μm
Chip size: 10mm x 10mm
Cooling temperature: -15 ° C
Expanding amount: 15mm
Expanding speed: 100mm / sec
"Heating conditions"
Expanding amount: 8mm
Distance between dryer and workpiece: 20mm
Dryer temperature: 250 ° C
Dryer rotation speed: 5 ° / sec

DESCRIPTION OF SYMBOLS 10 Dicing die-bonding film 1 Dicing tape 1a Laminating part 1b Peripheral part 1c Contact area 1d Non-contact area 2 Die-bonding chip 3 Die-bonding film 4 Semiconductor wafer 4L Line to be divided 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin 11 Base material 12 Adhesive layer 21 Laminate 22 Die bond agent 31 Dicing ring 32 Wafer expansion device 33 Push-up part 41 Modified region 42 Non-modified region 61 Substrate with semiconductor chip 100 Laser light

51 Chip fixing body 52 Divided body 111 Rotating blade 104 Semiconductor wafer 104F Front surface 104R Back surface 104S Groove 112 Protective base material 113 Grinding wheel

201 Dicing tape 201a Laminating part 201b Peripheral part 201c Contact section 201d Non-contact section 202 Die-bonding chip 205 Semiconductor chip 222 Die-bonding agent

Claims (8)

Die bond film,
A dicing tape comprising a laminated portion arranged on the die bond film and a peripheral portion arranged around the laminated portion;
The shrinkage rate at 130 ° C. to 160 ° C. of the peripheral portion is 0.1% or more,
The shrinkage rate includes a first shrinkage rate in the MD direction and a second shrinkage rate in the TD direction, and the first shrinkage rate is less than 5 times the second shrinkage rate.
Dicing die bond film. The dicing die-bonding film according to claim 1, wherein the shrinkage rate is calculated by the following formula.
Shrinkage rate = ((interval of vote lines before contraction−interval of vote lines after contraction) / interval of vote lines before contraction) ×
100 The dicing die-bonding film according to claim 1 or 2, wherein an absolute value of a difference between the first shrinkage rate and the second shrinkage rate is 10% or less. The dicing die-bonding film according to claim 1, wherein the dicing tape is not broken after being left at 130 ° C. to 160 ° C. for 5 minutes in a state of being stretched to 200%. The dicing die-bonding film according to any one of claims 1 to 4, wherein the elongation at break of the dicing tape at 23 ° C is 500% or more. The dicing die-bonding film according to claim 1, wherein the dicing tape has a yield point at an elongation of 1% to 200% when stretched at −15 ° C. and a tensile speed of 50 mm / min. 8. A method of manufacturing a semiconductor device, comprising: a step of dividing the die bond film and the semiconductor wafer by expanding a laminate including the dicing die bond film and a semiconductor wafer disposed on the die bond film. Dicing die-bonding film in any one of 1-6. The method according to claim 1, wherein the dicing die-bonding film and a divided body including a plurality of semiconductor chips arranged on the die-bonding film are expanded to divide the die-bonding film by expanding. The dicing die-bonding film according to any one of 7 above.

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