JP5323779B2 - Wafer processing tape - Google Patents

Description

The present invention relates to a wafer processing tape used when an adhesive film and / or a wafer is divided into individual chips by expanding.

In the manufacturing process of a semiconductor device, after attaching a stretchable and adhesive wafer processing tape to a semiconductor wafer, the semiconductor wafer is cut (diced) into chips, the adhesive tape is expanded, and further cut. A step of picking up the chip is performed.

As a wafer processing tape used in the manufacturing process of the semiconductor device, in addition to an adhesive tape (dicing tape) composed of a base sheet and an adhesive layer, a die bonding film (die attach film) which is a dicing tape and an adhesive film A dicing die-bonding film having a structure in which is also laminated is proposed.

Generally, when using a dicing die bonding film, first, the die bonding film side of the dicing die bonding film is bonded to the back surface of the semiconductor wafer to fix the semiconductor wafer, and then the semiconductor wafer and the die bonding film are used using a dicing blade. Is diced into chips. Thereafter, the dicing tape is expanded in the circumferential direction to widen the distance between the chips. This expanding process is
This is carried out in order to improve chip recognition by a D camera or the like, and to prevent damage to the chip caused by contact between adjacent chips when picking up a chip.

However, in the dicing process, when the semiconductor wafer and the die bonding film are diced together using a dicing blade, not only the wafer cutting waste but also the die bonding film cutting waste is generated. Since the cutting dust of the die bonding film itself has an adhesive function, when the cutting dust is clogged in the dicing groove of the wafer, the chips stick to each other to cause a pick-up failure and the like, and the manufacturing yield of the semiconductor device decreases.

In order to solve the above problem, in the dicing process, only the semiconductor wafer is diced,
In the expanding process, a method of dividing the die bonding film corresponding to each chip by expanding the dicing tape in the expanding process has been proposed (for example, paragraph number “0055” to paragraph number “0056” in Patent Document 1). . According to such a method for dividing the die bonding film using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.

As a method for cutting a semiconductor wafer, a half-cut dicing method is known in which a groove having a cutting depth shallower than the thickness of the wafer is formed from the wafer surface without performing full-cut dicing of the semiconductor wafer. In this method, the wafer can be divided into chips by expanding a dicing tape that holds the half-cut wafer. And also in this half-cut dicing method, it is possible to divide a die-bonding film with a wafer using the tension | tensile_strength at the time of an expansion.

In recent years, a so-called stealth dicing method in which a wafer is cut in a non-contact manner using a laser processing apparatus has been proposed as a method for cutting a semiconductor wafer.

For example, in Patent Document 2, as a stealth dicing method, laser light is applied by focusing light on the inside of a semiconductor substrate on which a sheet (dicing tape) is attached with a die bonding resin layer (die bonding film) interposed therebetween. By forming a modified region by multiphoton absorption inside the semiconductor substrate and forming the planned cutting portion in this modified region, the semiconductor is expanded along the planned cutting portion by expanding (expanding) the sheet. A method for cutting a semiconductor substrate comprising a step of cutting a substrate and a die bond resin layer is disclosed.

According to the semiconductor substrate cutting method of Patent Document 2, since the semiconductor wafer and the die bond resin layer (die bonding film) are cut in a non-contact manner by laser light irradiation and sheet expansion, as in the case of using a dicing blade. The semiconductor wafer can be cut without causing chipping. Therefore, it is particularly useful when, for example, an ultrathin semiconductor wafer of 50 μm or less is cut.

Regardless of whether the full-cut dicing method, half-cut dicing method, or stealth dicing method described above is used, in order to avoid the generation of cutting scraps on the die-bonding film, which is an adhesive, the die is expanded by dicing tape expansion. It is effective to divide the bonding film.

However, since the die bonding film is flexible and easily stretched, there is a problem that the die bonding film is difficult to be divided by the expansion of the dicing tape. In order to improve the dividing property of the die bonding film by expanding, it is necessary to increase the expanding amount of the dicing tape. However, increasing the amount of expansion also increases the amount of deflection of the dicing tape, which adversely affects subsequent transport processes and the like.

So far, as a method for eliminating the deflection of the dicing tape, for example, it has been proposed to heat and contract the bent portion (Patent Document 3).

JP 2007-5530 A JP 2003-338467 A JP 2007-157877 A

However, even if the bent portion of the dicing tape is heated and shrunk as in the method described in Patent Document 3 to improve transportability, it can be expanded sufficiently when expanded again in the pickup process thereafter. There was a problem that the pick-up performance deteriorated.

The present inventors, and a substrate film and a pressure-sensitive adhesive layer, by expanding, when dividing correspondingly the pressure-sensitive adhesive layer on the pasted a c d c into individual chips or the adhesive used when cutting the pasted a c d c in the adhesive film and / or the adhesive film was stuck onto the adhesive layer corresponding to the individual chips, it shrinks by heating after expanding c a d c processing tape, and an elongation ratio of 200% or more, and, after stretching to 200% elongation, the elongation ratio by heating to 120 ° C. characterized by comprising the following 120% c by using the e Ha processing tape it was found to perform each step efficiently.
The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) can be used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer.
Also,
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) can be used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer.
Also,
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) can be used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer.
Also ,
A step of cutting up down is along a semiconductor wafer formed in cutting line scheduled line c d a thickness less than the depth of the hard, - circuit pattern using (a) the dicing blade
A step of laminating a surface protection tape (b) the semiconductor c d c surface,
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) can be used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer.

The tape for wafer processing of the present invention has a base film and a pressure-sensitive adhesive layer, and expands to divide the adhesive film and / or wafer provided on the pressure-sensitive adhesive layer into individual chips. Excellent severability, and excellent shrinkage due to heat after expansion. Good maintainability of adhesive film and chip while maintaining high severability and good expansion. Can be picked up.

It is sectional drawing which shows an example of the tape for wafer processing of this invention. It is sectional drawing which shows the adhesive tape of this invention. It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the semiconductor wafer by laser processing. (A) is sectional drawing which shows the state with which the tape for wafer processing was mounted in the expand apparatus, (b) is sectional drawing which shows the tape for wafer processing after expansion, and a semiconductor wafer.

Hereinafter, embodiments of the present invention will be described in detail.
FIG. 1 is a sectional view of a wafer processing tape 1 showing an embodiment of the present invention. The wafer processing tape 1 includes an adhesive tape 10 having a base sheet 11 and an adhesive layer 12, and an adhesive layer 1.
2 and an adhesive film 13 provided on the upper surface.

The tape for wafer processing 1 of the present invention is expanded, whereby the adhesive film 13 bonded on the pressure-sensitive adhesive layer 12 and / or the wafer W bonded to the adhesive film 13 are applied to individual chips C. Wafer processing tape 1 that is used when correspondingly divided and shrinks when heated after expansion, has an elongation rate of 200% or more, and after extending to an elongation rate of 200%, it is increased to 120 ° C. The wafer processing tape 1 is characterized in that the elongation is 120% or less by heating.

Below, the base material sheet 11, the adhesive layer 12, and the adhesive film 13 are each demonstrated in detail.

Although it does not specifically limit as a material which comprises the base material sheet 11, It is preferable to select from polyolefin and a polyvinyl chloride.

Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid. Examples thereof include homopolymers or copolymers of α-olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.

When the adhesive layer 12 to be described later is a type that is cured by irradiation with radiation and has a reduced adhesive strength, the substrate sheet preferably has the above characteristics and is radiation transmissive. The thickness of the base sheet is 50 to 3 from the viewpoint of ensuring strength and picking up of the chip.
It is preferable that it is 00 micrometers. Moreover, the base material sheet 11 may be a single layer or may be composed of a plurality of layers.

In order for the elongation rate of the wafer processing tape 1 to be 200% or more and to reach an elongation rate of 200% and then heated to 120 ° C., the elongation rate becomes 120% or less. It is preferable to use a base sheet 11 having characteristics.

<Adhesive layer>
The pressure-sensitive adhesive layer 12 can be produced by applying a pressure-sensitive adhesive on the base sheet 11. Although there is no restriction | limiting in particular as the adhesive layer 12, The adhesive film 13 bonded on the adhesive layer 12 is used.
The peel strength (adhesive strength) of the adhesive film 13 is such that the chip C with the adhesive film 13 can be held at the time of expansion (when the adhesive film 13 and / or the wafer W is divided), and is adhered at the time of pickup. What is necessary is just to have the characteristic that peeling with the agent film 13 is easy. In order to improve the pick-up property, the pressure-sensitive adhesive layer 12 is preferably radiation curable.

For example, in the present invention, the main chain is an acrylic copolymer having at least a radiation-curable carbon-carbon double bond-containing group, a hydroxyl group, and a group containing a carboxyl group, and the gel fraction. Is preferably 60% or more. Furthermore, at least one selected from a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, a polyisocyanate, a melamine / formaldehyde resin, and an epoxy resin. It is preferable to contain a polymer obtained by addition reaction of the compound (B).

The compound (A) that is one of the main components of the pressure-sensitive adhesive layer will be described. A preferable introduction amount of the radiation curable carbon-carbon double bond of the compound (A) is 0.5 to 20, more preferably 0.8 to 10 in terms of iodine value. If the iodine value is 0.5 or more, an effect of reducing the adhesive strength after irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after irradiation is sufficient and after stretching. Therefore, the problem that the image recognition of each element becomes difficult at the time of pick-up can be suppressed. Furthermore, the compound (A) itself is stable and easy to manufacture.

The compound (A) preferably has a glass transition point of −70 ° C. to 0 ° C., −66 ° C.
More preferably, it is -28 degreeC. Glass transition point (hereinafter referred to as Tg) is -70 ° C.
If it is above, the heat resistance to the heat accompanying radiation irradiation is sufficient, and if it is 0 ° C. or less, the effect of preventing scattering of elements after dicing in a wafer having a rough surface state can be sufficiently obtained.

The compound (A) may be produced by any method, and has, for example, a radiation curable carbon-carbon double bond such as an acrylic copolymer or a methacrylic copolymer, and a functional group. And a compound having a functional group capable of reacting with the functional group ((2)
)) Is used.

Of these, the compound having the radiation curable carbon-carbon double bond and the functional group ((1
)) Is a monomer ((1) -1) having a radiation curable carbon-carbon double bond, such as an alkyl acrylate or alkyl methacrylate, and a monomer having a functional group ((
It can be obtained by copolymerizing 1) -2). About the amount of adhesive double bonds, the amount of carbon-carbon double bonds contained in about 10 g of the heat-dried adhesive can be quantitatively measured by a weight increase method by bromine addition reaction in a dark place in vacuum.

As a monomer ((1) -1), C6-C12 hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or a single quantity of 5 or less carbon atoms Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate,
Examples include methyl acrylate or methacrylates similar to these.

As the monomer ((1) -1), the glass transition point can be changed by changing the number of carbon atoms, so that the desired glass transition point can be produced. In addition to the glass transition point,
Carbon such as vinyl acetate, styrene, acrylonitrile for the purpose of improving compatibility and various performances
It is also possible to mix a low molecular compound having a carbon double bond within a range of 5% by mass or less of the total mass of the monomer ((1) -1).

Examples of the functional group of the monomer ((1) -2) include a carboxyl group, a hydroxyl group, an amino group,
A cyclic acid anhydride group, an epoxy group, an isocyanate group, etc., and a monomer ((1)
Specific examples of -2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylate , N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride , Phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, polyisocyanate compound with a part of isocyanate group hydroxyl group or carboxyl group and radiation curable carbon It is possible to enumerate such as those urethanization a monomer having a carbon-carbon double bond.

In the compound (2), the functional group used is the compound (1), that is, the monomer ((
When the functional group of 1) -2) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, an epoxy group, an isocyanate group, and the like can be given. When it is a hydroxyl group, a cyclic acid anhydride group, In the case of an amino group, examples include an epoxy group and an isocyanate group. In the case of an epoxy group, examples include a carboxyl group, a cyclic acid anhydride group, and an amino group. Specific examples include monomers (
The thing similar to what was enumerated by the specific example of (1) -2) can be enumerated.

By leaving an unreacted functional group in the reaction between the compound (1) and the compound (2), it is possible to produce those specified in the present invention with respect to characteristics such as acid value or hydroxyl value.

In the synthesis of the compound (A), as an organic solvent when the reaction is performed by solution polymerization,
Ketone-based, ester-based, alcohol-based, and aromatic-based ones can be used, but in particular, acrylic polymers such as toluene, ethyl acetate, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, and methyl ethyl ketone are generally good. The solvent is preferably a solvent having a boiling point of 60 to 120 ° C. The polymerization initiator is usually a radical generator such as an azobis type such as α, α′-azobisisobutylnitrile or an organic peroxide type such as benzoyl peroxide. . At this time, a catalyst and a polymerization inhibitor can be used together as necessary, and the compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

The compound (A) can be obtained as described above. In the present invention, the compound (A
) Is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force due to radiation irradiation becomes small, and when the wafer is diced, the device is likely to be displaced, and image recognition may be difficult. In order to prevent the deviation of the element as much as possible, the weight average molecular weight is preferably 400,000 or more. Moreover, when a weight average molecular weight exceeds 1 million, there exists a possibility of gelatinizing at the time of a synthesis | combination and a coating.
In addition, the weight average molecular weight in this invention is a weight average molecular weight of polystyrene conversion.

In addition, it is preferable that the compound (A) has an OH group having a hydroxyl value of 5 to 100 because the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after irradiation. Moreover, it is preferable that a compound (A) has a COOH group used as the acid value of 0.5-30.
Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive strength after irradiation is not sufficient, and if it is too high, the fluidity of the adhesive after irradiation tends to be impaired. If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

Next, the compound (B) which is another main component of the pressure-sensitive adhesive layer will be described. Compound(
B) is a compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more. This compound (B) acts as a cross-linking agent, and the cohesive force of the pressure-sensitive adhesive mainly composed of the compounds (A) and (B) is obtained by the cross-linking structure formed as a result of reaction with the compound (A) or the base sheet. It can be improved after application.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4
Aromatic isocyanates such as '-diphenyl ether diisocyanate, 4,4'-[2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate 4,4'-dicyclohexylmethane diisocyanate, 2,4'-
Examples include dicyclohexylmethane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specifically, Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name) or the like can be used.

Further, as the melamine / formaldehyde resin, specifically, Nicalak MX-45
(Trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.) and the like can be used. Furthermore, as an epoxy resin, TETRAD-X (Mitsubishi Chemical Corporation make, brand name) etc. can be used. In the present invention, it is particularly preferable to use polyisocyanates.

The addition amount of (B) needs to be selected so as to be a ratio of 0.1 to 10 parts by mass, preferably 0.4 to 3 parts by mass with respect to 100 parts by mass of the compound (A). By selecting within this range, it is possible to obtain an appropriate cohesive force, and since the crosslinking reaction does not proceed abruptly, workability such as blending and application of the adhesive is improved.

In the present invention, the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator (C). There is no restriction | limiting in particular in the photoinitiator (C) in which the adhesive layer 12b is contained, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer),
Examples thereof include acridine compounds, and these can be used alone or in combination of two or more.
As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compounds (A), and it is more preferable to set it as 0.5-5 mass parts.

Furthermore, the radiation-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a pressure-adjusting agent, a surfactant, or other modifiers as necessary. Moreover, you may add an inorganic compound filler suitably.

The thickness of the pressure-sensitive adhesive layer is preferably at least 5 μm, more preferably 10 μm or more. The pressure-sensitive adhesive layer may have a structure in which a plurality of layers are laminated.

<Adhesive film>
The adhesive film 13 is formed on the chip C after the wafer W is bonded and cut or divided.
Is picked up from the pressure-sensitive adhesive layer 12 and attached to the chip C.
It functions as a bonding film when fixing to a package substrate or a lead frame.

Although it does not specifically limit as the adhesive film 13, Although the film-like adhesive 13 generally used as a die-bonding film can be used conveniently, a polyimide-type adhesive agent and an acrylic adhesive Agent, epoxy resin / phenolic resin / acrylic resin /
An inorganic filler blend adhesive is preferred. The thickness may be appropriately set, but 5 to 5
About 100 μm is preferable.

<Application>
The usage application of the wafer processing tape 1 of the present invention is not particularly limited as long as it is used in a method for producing a semiconductor device including a step of dividing the adhesive film 12 by at least an expand. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (D).

Manufacturing method of semiconductor device (A)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the semiconductor chip of the wafer processing tape, and maintaining the interval between the semiconductor chips;
(H) The adhesive semiconductor chip can be used in a method for manufacturing a semiconductor device including a step of picking up the adhesive semiconductor chip from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (B)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the semiconductor chip of the wafer processing tape, and maintaining the interval between the semiconductor chips;
(H) The adhesive semiconductor chip can be used in a method for manufacturing a semiconductor device including a step of picking up the adhesive semiconductor chip from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (C)
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the semiconductor chip of the wafer processing tape, and maintaining the interval between the semiconductor chips;
(H) The adhesive semiconductor chip can be used in a method for manufacturing a semiconductor device including a step of picking up the adhesive semiconductor chip from an adhesive layer of a wafer processing tape.

Manufacturing method of semiconductor device (D)
(A) cutting a semiconductor wafer on which a circuit pattern is formed using a dicing blade to a depth less than the thickness of the wafer along a predetermined cutting line;
(B) bonding a surface protective tape to the surface of the semiconductor wafer;
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
(G) removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the semiconductor chip of the wafer processing tape, and maintaining the interval between the semiconductor chips;
(H) The adhesive semiconductor chip can be used in a method for manufacturing a semiconductor device including a step of picking up the adhesive semiconductor chip from an adhesive layer of a wafer processing tape.

<How to use>
A method for using the wafer processing tape of the present invention when the stealth dicing method is used will be described with reference to FIGS.
First, as shown in FIG. 2, a laser beam is irradiated on a part to be divided of the semiconductor wafer W to form a modified region 30 by multiphoton absorption inside the wafer. Separately, the base material sheet 11 shown in FIG.
And the adhesive film 13 is bonded together on the adhesive layer 12 of the adhesive tape 10 which consists of the adhesive layer 12, and the tape for wafer processing shown in FIG. 1 is prepared.

Next, as shown in FIG. 4A, the back surface of the semiconductor wafer W is attached to the adhesive film 13, the ring frame 20 is attached to the outer peripheral portion of the adhesive layer 12, and the base sheet 11 of the adhesive tape. Is placed on the stage 21 of the expanding apparatus. In the figure, reference numeral 22 denotes a hollow cylindrical push-up member of the expanding device.
Prior to the step of irradiating the semiconductor wafer W with laser light, a bonding step with the adhesive film 13 may be performed.

Next, at a low temperature of −15 ° C. to 5 ° C., as shown in FIG. 4B, with the ring frame 20 fixed, the push-up member 22 of the expanding device is raised to expand the adhesive tape 10. . As a result, the adhesive tape 10 is stretched in the circumferential direction, and the wafer W is divided in units of chips starting from the modified region, and the adhesive film 13 is also divided.
Thereafter, the adhesive layer 12 is subjected to radiation curing treatment or thermosetting treatment and the semiconductor chip C is picked up, whereby a semiconductor chip with an adhesive can be obtained.

In the expanding process as described above, the adhesive film 13 is prevented from expanding (deformation) due to the expansion in the portion adhered to the back surface of the wafer W, and does not break.
On the other hand, at the position between the chips, the tension due to the expansion of the adhesive tape 10 concentrates and breaks. According to the present invention, by using the pressure-sensitive adhesive tape 10 having excellent peel strength (pressure-sensitive adhesive strength) with respect to the adhesive film 13, even between the pressure-sensitive adhesive tape 10 and the adhesive film 13 even in an expanding process at a low temperature. Can be suppressed and prevented. Therefore, the tension at the time of expansion can be propagated to the adhesive film 13 while maintaining the cutting property of the adhesive film 13 at a low temperature at a low temperature, and the adhesive film 13 can be satisfactorily corresponding to each chip C. Can be divided. Moreover, since the adhesive tape 10 is excellent also in the adhesive strength with respect to the ring frame of an expanding apparatus, it can also prevent peeling from a ring frame. Furthermore, by setting the elongation after heating to 120% or less, the space between the chips can be sufficiently expanded when the expansion is performed again in the pickup process, so that a good pickup can be performed.

In the above-described embodiment, the pressure-sensitive adhesive tape 1 having the base sheet 11 and the pressure-sensitive adhesive layer 12 is used.
Although the wafer processing tape 1 provided with 0 and the adhesive film 13 provided on the pressure-sensitive adhesive layer 12 has been described, the pressure-sensitive adhesive having the base sheet 11 and the pressure-sensitive adhesive layer 12 as shown in FIG. A wafer processing tape made of the tape 10 may be used. In this case, since only the wafer is cut using a wafer processing tape, the adhesive film is not attached to the obtained chip. Therefore, when fixing to the package substrate or the lead frame, a separate adhesive is used. Need to be fixed.

Next, examples of the present invention will be described, but the present invention is not limited to these examples.

The base sheet used and the pressure-sensitive adhesive layer composition are shown below.
Substrate sheet A: ionomer resin copolymer substrate sheet B: ethylene-methacrylic acid copolymer substrate sheet C: laminate substrate sheet D of ionomer resin copolymer and ethylene-methacrylic acid copolymer: PP / Elastomer copolymer pressure-sensitive adhesive layer composition a: acrylic radiation-curable pressure-sensitive adhesive composition

Example 1
The base material sheet A was coated with the adhesive layer composition a dissolved in an organic solvent so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to produce an adhesive tape for wafer processing in Example 1. I got a tape.

(Example 2)
Example 2 is the same as Example 1 except that the base sheet B is used as the base sheet.
A wafer processing tape was prepared.

(Example 3)
Example 2 is the same as Example 1 except that the base sheet C is used as the base sheet.
A wafer processing tape was prepared.

(Comparative Example 1)
Comparative Example 1 was performed in the same manner as in Example 1 except that the base sheet D was used as the base sheet.
A wafer processing tape was prepared.

<Elongation rate of wafer processing tape>
Using a tensile test apparatus (JIS B 7721), the elongation percentage of the wafer processing tape was measured by the following tensile test.
Elongation rate: A wafer processing tape was punched out in a No. 1 dumbbell shape (JIS K 6301) to prepare a test piece, and the elongation rate between marked lines at a distance between marked lines of 40 mm and a tensile speed of 1000 mm / min was measured.
The elongation after heating to 120 ° C. was determined by measuring the distance between marked lines after placing the wafer processing tape, which had been extended to 200% by the above method, on a hot plate heated to 120 ° C. for 15 seconds.

From the results of Table 1, it was found that the wafer processing tapes shown in the examples exhibited excellent heat shrinkage and pick-up properties, and the effects of the present invention could be confirmed.

10: Adhesive tape 11: Base sheet 12: Adhesive layer 13: Adhesive film 20: Ring frame 21: Stage 22: Push-up member

Claims (5)

And a substrate film and a pressure-sensitive adhesive layer, by expanding, laminated on the time to divide the pasted a c d c on the pressure-sensitive adhesive layer corresponding to the individual chips or the pressure-sensitive adhesive layer in c d c processing tape which shrinks by used when dividing the c d c which is stuck to the adhesive film and / or the adhesive film is in correspondence with the individual chips are heated after expanding there are, and an elongation ratio of 200% or more, and, after stretching to 200% elongation, c d c processing tape which elongation ratio by heating to 120 ° C. is characterized by comprising the following 120%. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In the state which heated the semiconductor wafer at 70-80 degreeC, the process of bonding the adhesive film bonded by the said adhesive layer of the said tape for wafer processing on the back surface of the said semiconductor wafer,
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption inside the wafer;
(F) dividing the semiconductor wafer and the adhesive film along a dividing line by expanding the wafer processing tape, and obtaining a plurality of semiconductor chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) wafer processing according to claim 1, characterized in that it is used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer Tape. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) irradiating a laser beam along a dividing line from the surface of the semiconductor wafer to divide into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) wafer processing according to claim 1, characterized in that it is used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer Tape. The wafer processing tape is
(A) a step of bonding a surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the semiconductor wafer;
(C) In a state where the semiconductor wafer is heated at 70 to 80 ° C., a step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor wafer;
(D) peeling the surface protection tape from the semiconductor wafer surface;
(E) cutting the semiconductor wafer along a cutting line using a dicing blade, and cutting the semiconductor wafer into individual semiconductor chips;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) wafer processing according to claim 1, characterized in that it is used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer Tape. The wafer processing tape is
A step of cutting up down is along a semiconductor wafer formed in cutting line scheduled line c d a thickness less than the depth of the hard, - circuit pattern using (a) the dicing blade
A step of laminating a surface protection tape (b) the semiconductor c d c surface,
(C) a back grinding process in which the back surface of the semiconductor wafer is ground and divided into individual semiconductor chips;
(D) A step of bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the wafer processing tape on the back surface of the semiconductor chip in a state where the semiconductor wafer is heated at 70 to 80 ° C .;
(E) peeling the surface protection tape from the semiconductor wafer surface;
(F) dividing the adhesive film in correspondence with the semiconductor chip by expanding the wafer processing tape to obtain a plurality of chips with adhesive films;
A step of holding the interval of the semiconductor chip (g) the c d c for processing to remove slack generated in the expanding step the does not overlap with the semiconductor chip portion of the tape by causing thermal shrinkage,
(H) wafer processing according to claim 1, characterized in that it is used in the method of manufacturing a semiconductor device comprising the steps of picking up the adhesive film-attached semiconductor chips from c d c processing tape adhesive layer Tape.

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