JP6535119B1 - Semiconductor processing tape - Google Patents

Abstract

An object is to provide a semiconductor processing tape which can be sufficiently heated and shrunk in a short time and can hold a kerf width. A tape for processing a semiconductor according to the present invention includes a pressure-sensitive adhesive tape 15 having a base film 11 and a pressure-sensitive adhesive layer 12 formed on at least one surface side of the base film 11. 15. Measured at the time of temperature rise by the thermomechanical characteristics tester in the TD direction, and the average value of the thermal deformation rate every 1 ° C. between 40 ° C. and 80 ° C. measured at the temperature rise by the thermomechanical characteristics tester in the MD It is characterized in that the sum with the average value of the thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. is a negative value. [Selected figure] Figure 1

Description

  The present invention can be used to fix a wafer in a dicing step of dividing a wafer into chip-like elements, and a die bonding step of bonding between the chip and the chip or between the chip and the substrate after dicing. The present invention relates to an expandable semiconductor processing tape that can be used in a mounting step and can also be used in a step of dividing an adhesive layer along a chip by expansion.

  Conventionally, in the process of manufacturing a semiconductor device such as an integrated circuit (IC), a back grinding step of grinding the back surface of the wafer to thin the wafer after forming the circuit pattern, adhesion and elasticity of the back surface of the wafer After a certain semiconductor processing tape is attached, a dicing step of dividing the wafer into chip units, an expanding step of expanding the semiconductor processing tape, a pickup step of picking up the divided chips, and a picked up chip A die bonding (mounting) step of bonding to a lead frame, a package substrate or the like (or stacking and bonding of chips in a stacked package) is performed.

  In the backgrinding process, a surface protection tape is used to protect the circuit patterning surface (wafer surface) of the wafer from contamination. After the back surface grinding of the wafer, when peeling off this surface protection tape from the surface of the wafer, a tape for semiconductor processing (dicing / die bonding tape) described below is bonded to the back surface of the wafer, and then the suction table is used for semiconductor processing. After the tape side is fixed and the surface protection tape is treated to reduce the adhesion to the wafer, the surface protection tape is peeled off. The wafer from which the surface protective tape has been peeled is then taken out of the suction table in a state where the wafer is bonded to the back surface, and is subjected to the next dicing step. When the surface protection tape is made of an energy ray curable component such as ultraviolet light, the above-mentioned treatment for reducing the adhesive strength is energy ray irradiation treatment, and when the surface protection tape is made of a thermosetting component, It is heat treatment.

  In the dicing step to the mounting step after the back grinding step, a semiconductor processing tape in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used. Generally, when using such a tape for semiconductor processing, first, the adhesive layer of the tape for semiconductor processing is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are chipped using a dicing blade. Dicing into units. Thereafter, the tape is expanded in the radial direction of the wafer to perform an expanding step to widen the distance between the chips. This expanding step is carried out to improve chip recognition by a CCD camera or the like in the subsequent pick-up step and to prevent chip breakage caused by contact between adjacent chips when picking up a chip. Ru. Thereafter, the chip is separated from the pressure-sensitive adhesive layer together with the adhesive layer in a pickup process and picked up, and is directly adhered to a lead frame, a package substrate or the like in a mounting process. As described above, by using the semiconductor processing tape, it is possible to directly bond the chip with the adhesive layer to the lead frame, the package substrate, etc. Therefore, the adhesive application process and the die bonding to each chip separately The step of bonding the film can be omitted.

  However, in the above-described dicing process, as described above, since the wafer and the adhesive layer are diced together using a dicing blade, not only the cuttings of the wafer but also the cuttings of the adhesive layer are generated. When chips of the adhesive layer get stuck in the dicing grooves of the wafer, the chips stick to each other to cause pickup defects and the like, resulting in a problem of lowering the manufacturing yield of the semiconductor device.

  In order to solve such problems, a method has been proposed in which the adhesive layer is divided into individual chips by dicing only the wafer with a blade in the dicing step and expanding the tape for semiconductor processing in the expanding step. (E.g., Patent Document 1). According to such a method of dividing the adhesive layer using tension at the time of expansion, no cutting chips of the adhesive are generated, and no adverse effect is caused in the pickup process.

  In recent years, a so-called stealth dicing method has been proposed as a method of cutting a wafer, which can cut the wafer without contact using a laser processing apparatus. For example, according to Patent Document 2, as a stealth dicing method, an adhesive layer (die bond resin layer) is interposed, the inside of the semiconductor substrate to which the sheet is attached is focused, and the laser light is irradiated. A step of forming a modified region by multiphoton absorption inside the semiconductor substrate and setting the modified region as a portion to be cut and expanding the sheet cut the semiconductor substrate and the adhesive layer along the portion to be cut And a method of cutting a semiconductor substrate.

  Further, as another method of cutting a wafer using a laser processing apparatus, for example, Patent Document 3 has a step of attaching an adhesive layer (adhesive film) for die bonding to the back surface of the wafer, and the adhesive layer A step of bonding a stretchable protective adhesive tape to the adhesive layer side of the bonded wafer, and irradiating the laser beam along the streets from the surface of the wafer to which the protective adhesive tape is bonded, to individual chips The step of dividing, the step of expanding the protective adhesive tape to apply tensile force to the adhesive layer, and breaking the adhesive layer for each chip, and the protective adhesive of the chip to which the broken adhesive layer is bonded A method of dividing the wafer has been proposed which includes the step of releasing from the tape.

  According to the wafer cutting methods described in Patent Document 2 and Patent Document 3, since the wafer is cut in a non-contact manner by laser light irradiation and tape expansion, the physical load on the wafer is small, which is currently mainstream. The wafer can be cut without generating chipping of the wafer as in the case of performing blade dicing. In addition, since the adhesive layer is divided by the expansion, chips of the adhesive layer are not generated. For this reason, attention has been focused on as an excellent technology that can replace blade dicing.

  However, as described in Patent Documents 1 to 3 described above, in the method of expanding by expanding and dividing the adhesive layer, when a conventional tape for semiconductor processing is used, expanding ring is accompanied by an increase in expanding amount. There is a problem that the portion pushed up in the step is extended, and the portion slackens after unwinding the expand, so that the distance between the chips (hereinafter, "kerf width") can not be maintained.

  Therefore, there has been proposed a method of holding the kerf width by heating the slack portion of the tape for processing a semiconductor by shrinking the adhesive layer by expanding and unwinding the expanded (for example, Patent Document 4) , 5).

JP 2007-5530 A Unexamined-Japanese-Patent No. 2003-338467 JP 2004-273895 A International Publication No. 2016/152957 Unexamined-Japanese-Patent No. 2015-211081

  By the way, as a method of shrinking the slack of the semiconductor processing tape produced by the expansion by heating, generally, the pair of hot air nozzles is circulated around the annular portion pushed up by the expand ring and the slack is generated. A method is used in which heat is applied to the part to heat and shrink.

  In the tape for semiconductor processing described in Patent Document 4, the heat shrinkage rate in both the longitudinal direction and the width direction of the tape when heated at 100 ° C. for 10 seconds is 0% or more and 20% or less. However, when the hot air nozzle is circulated and heated, the temperature in the vicinity of the surface of the tape for processing a semiconductor gradually increases, so it takes a long time to remove the slack in all the annular portions. was there. In addition, the kerf width can not be sufficiently maintained, and adjacent chips come into contact with each other at the time of pickup, and chipping occurs, resulting in a problem that the yield of the semiconductor component manufacturing process is deteriorated.

  Further, the tape for semiconductor processing described in Patent Document 5 has a shrinkage rate of 0.1% or more at 130 ° C. to 160 ° C. (refer to claim 1 of Patent Document 5), and shrinkage The temperature that causes Therefore, when heat shrinkage is performed by warm air, high temperature and long heating time are required, and warm air affects up to the adhesive layer in the vicinity of the wafer outer periphery, and the divided adhesive layer may be melted and re-fused There is. In addition, the kerf width can not be sufficiently maintained, and adjacent chips come into contact with each other at the time of pickup, and chipping occurs, resulting in a problem that the yield of the semiconductor component manufacturing process is deteriorated.

Therefore, according to the present invention, the kerf width can be sufficiently maintained to a degree that the heat shrinkage can be sufficiently performed in a short time, and adjacent chips contact with each other at the time of pickup to prevent chipping. It is an object of the present invention to provide a semiconductor processing tape capable of

  In order to solve the above-mentioned subject, the tape for semiconductor processing concerning the present invention has an adhesive tape which has a substrate film and an adhesive layer formed in at least one side of the substrate film, and the adhesive tape Measured at the time of temperature rise by the thermomechanical property tester in the TD direction and the average value of the thermal deformation rate per 1 ° C between 40 ° C and 80 ° C measured at the temperature rise by the thermomechanical property tester in the MD direction It is characterized in that the sum with the average value of the thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. is a negative value.

  Moreover, it is preferable that the adhesive layer and the peeling film are laminated | stacked in this order on the said adhesive layer side in the said tape for semiconductor processing.

  The above semiconductor processing tape is preferably used for full-cut and half-cut blade dicing, full-cut laser dicing, or stealth dicing using a laser.

  According to the tape for processing a semiconductor of the present invention, the kerf width can be reduced to such an extent that heat shrinkage can be sufficiently achieved in a short time, and adjacent chips are brought into contact with each other at the time of pickup to cause chipping. It can be held sufficiently.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the structure of the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing which shows the state in which the surface protection tape was bonded by the wafer. It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer. It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the wafer by laser processing. (A) It is sectional drawing which shows the state in which the tape for semiconductor processing which concerns on embodiment of this invention was mounted in the expand apparatus. (B) It is sectional drawing which shows the process in which a wafer is parted into a chip by expansion of the tape for semiconductor processing. (C) It is sectional drawing which shows the tape for semiconductor processing after expansion, an adhesive bond layer, and a chip | tip. It is sectional drawing for demonstrating a heating shrinkage process. It is an explanatory view showing a measurement point of kerf width in evaluation of an example and a comparative example. It is an example of the measurement result of a thermal deformation rate.

  Hereinafter, embodiments of the present invention will be described in detail.

  FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention. The tape 10 for semiconductor processing of the present invention is one in which the adhesive layer 13 is cut along the chip when the wafer is divided into the chip by expansion. This semiconductor processing tape 10 has an adhesive tape 15 comprising a base film 11 and an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12. And the back surface of the wafer is bonded onto the adhesive layer 13. In addition, each layer may be cut (pre-cut) into a predetermined shape in advance according to the use process and the apparatus. Furthermore, the semiconductor processing tape 10 of the present invention may be in the form of being cut for each wafer, or a long sheet on which a plurality of pieces cut for each wafer may be formed, It may be in the form of a roll. The configuration of each layer will be described below.

<Base film>
It is preferable that the base film 11 has uniform and isotropic expandability in that the wafer can be cut without deviation in all directions in the expanding step, and the material is not particularly limited. In general, a crosslinked resin has a greater resilience to tension than a non-crosslinked resin, and a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, it is excellent in the point which removes the slack which arose in the tape after an expansion process by heat contraction, makes a tape tense, and keeps the space | interval (kerf width) of each chip | tip stably. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, non-crosslinked resin has a smaller resilience against pulling compared to the crosslinked resin. Therefore, after the expanding step in a low temperature range such as -15 ° C to 0 ° C, the tape was once relaxed and returned to normal temperature, and the tape was hard to shrink when going to the pickup step and mounting step, so it adhered to the chip It is excellent at the point which can prevent that adhesive bond layers contact. Among non-crosslinked resins, olefin non-crosslinked resins are more preferably used.

  As such a thermoplastic cross-linked resin, for example, an ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester as a main polymer component 3 For example, ionomer resins in which a primary copolymer is crosslinked with metal ions are exemplified. These are particularly suitable in that they are suitable for the expanding step in terms of uniform extensibility, and that they exert a strong resilience upon heating due to crosslinking. The metal ion contained in the ionomer resin is not particularly limited, and examples thereof include zinc and sodium. Zinc ion is preferable from the viewpoint of low elution and low staining. In the (meth) acrylic acid alkyl ester of the ternary copolymer, it is preferable that the alkyl group having 1 to 4 carbon atoms has a high elastic modulus and can transmit a strong force to the wafer. As such (meth) acrylic acid alkyl ester, methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate and the like can be mentioned. It can be mentioned.

  Moreover, as the above-mentioned thermoplastic crosslinked resin, in addition to the above-mentioned ionomer resin, low density polyethylene having a specific gravity of 0.910 or more and less than 0.930, ultra low density polyethylene having a specific gravity of less than 0.910, and ethylene-acetic acid It is also preferable that a resin selected from vinyl copolymers be crosslinked by irradiation with an energy beam such as an electron beam. Such a thermoplastic cross-linked resin has certain uniform extensibility since cross-linked sites and non-cross-linked sites coexist in the resin. In addition, it is also suitable for removing the slack of the tape generated in the expanding step, because it exerts a strong restoring force at the time of heating, and since it contains almost no chlorine in the composition of the molecular chain, the tape became unnecessary after use. Even if incinerated, environmental impact is small because it does not generate chlorinated aromatic hydrocarbons such as dioxin and its analogues. By appropriately adjusting the amount of energy rays irradiated to the polyethylene and the ethylene-vinyl acetate copolymer, a resin having sufficient uniform extensibility can be obtained.

  Moreover, as a non-crosslinked resin, the mixed resin composition of a polypropylene and a styrene butadiene copolymer is illustrated, for example.

  As polypropylene, for example, a homopolymer of propylene or a block type or random type propylene-ethylene copolymer can be used. The random type propylene-ethylene copolymer is preferable because of its low rigidity. When the content of the ethylene structural unit in the propylene-ethylene copolymer is 0.1% by weight or more, the tape is excellent in the rigidity and the compatibility between the resins in the mixed resin composition. If the rigidity of the tape is appropriate, the cuttability of the wafer is improved, and if the compatibility between the resins is high, the extrusion discharge amount is likely to be stabilized. More preferably, it is 1% by weight or more. Moreover, if the content rate of the ethylene structural unit in a propylene ethylene copolymer is 7 weight% or less, it is excellent at the point which a polypropylene becomes stable and it becomes easy to superpose | polymerize. More preferably, it is 5% by weight or less.

  The styrene-butadiene copolymer may be hydrogenated. When the styrene-butadiene copolymer is hydrogenated, the compatibility with propylene is good and it is possible to prevent embrittlement and discoloration due to oxidative degradation caused by double bonds in butadiene. Moreover, the content rate of the styrene structural unit in a styrene butadiene copolymer is preferable at the point which a styrene butadiene copolymer tends to polymerize stably that it is 5 weight% or more. Further, at 40% by weight or less, the point of flexibility and expandability is excellent. More preferably, it is 25% by weight or less, still more preferably 15% by weight or less. As the styrene-butadiene copolymer, either a block copolymer or a random copolymer can be used. The random type copolymer is preferable because the styrene phase is uniformly dispersed, the rigidity can be suppressed from becoming too large, and the extensibility is improved.

  It is excellent at the point which can suppress the thickness nonuniformity of a base film that the content rate of the polypropylene in mixed resin composition is 30 weight% or more. When the thickness is uniform, the extensibility tends to be isotropic, and the stress relaxation property of the base film becomes too large, and the distance between the chips decreases with time, and the adhesive layers come in contact with each other to remelt. It is easy to prevent wearing. More preferably, it is 50% by weight or more. Moreover, it is easy to adjust suitably the rigidity of a base film as the content rate of a polypropylene is 90 weight% or less. If the rigidity of the base film is too large, the force required to expand the base film will be large, and the load on the device will be large, making it impossible to expand sufficiently to divide the wafer or the adhesive layer 13 Because there is, it is important to adjust appropriately. The lower limit of the content of the styrene-butadiene copolymer in the combined resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the apparatus. The upper limit of 70% by weight or less is excellent in that thickness unevenness can be suppressed, and 50% by weight or less is more preferable.

  In addition, in the example shown in FIG. 1, although the base film 11 is a single | mono layer, it is not limited to this, The multiple layer structure which laminated | stacked 2 or more types of resin may be sufficient, 1 type of resin It may be laminated in two or more layers. Two or more resins are preferable from the viewpoint that their respective properties are further enhanced and developed if crosslinkability or non-crosslinkability is unified, and when crosslinkability or non-crosslinkability is laminated in combination, each resin It is preferable in that the disadvantages can be compensated. Although the thickness of the base film 11 is not particularly limited, it may be easily stretched in the expanding step of the semiconductor processing tape 10 and may have sufficient strength not to break. For example, about 50-300 micrometers is good, and 70 micrometers-200 micrometers are more preferable.

  As a manufacturing method of the base film 11 of multiple layers, a conventionally well-known extrusion method, a lamination method, etc. can be used. When using the laminating method, an adhesive may be interposed between the layers. As the adhesive, conventionally known adhesives can be used.

<Pressure-sensitive adhesive layer>
The pressure-sensitive adhesive layer 12 can be formed by applying a pressure-sensitive adhesive composition to the base film 11. The pressure-sensitive adhesive layer 12 constituting the semiconductor processing tape 10 of the present invention does not peel off from the adhesive layer 13 during dicing, and does not cause defects such as chip fly and the like, and an adhesive during pickup What is necessary is just to have a characteristic that facilitates peeling from the layer 13.

  In the tape 10 for semiconductor processing of the present invention, the constitution of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pickup property after dicing, energy ray curable one is preferable. It is preferable that it is a material which becomes easy to peel off with the adhesive layer 13 later. In one embodiment, the adhesive composition contains, as a base resin, 60 mol% or more of a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms, and an energy ray curability having an iodine value of 5 to 30 What has a polymer (A) which has a carbon-carbon double bond is illustrated. Here, the energy beam refers to a light beam such as ultraviolet light or ionizing radiation such as an electron beam.

  In such a polymer (A), when the introduction amount of the energy ray-curable carbon-carbon double bond is 5 or more in iodine number, it is excellent in that the reduction effect of the adhesive force after energy ray irradiation becomes high. More preferably, it is 10 or more. Further, when the iodine value is 30 or less, the holding power of the chip until irradiation after energy beam irradiation is high, and it is excellent in that it is easy to widen the gap of the chip at the time of expansion immediately before the pickup step. If it is possible to sufficiently widen the gap between chips before the pickup step, it is preferable because image recognition of each chip at the time of pickup is easy and pickup becomes easy. Further, it is preferable that the introduced amount of carbon-carbon double bond is an iodine value of 5 or more and 30 or less, because the polymer (A) itself is stable and the production becomes easy.

  Furthermore, the polymer (A) is excellent in the heat resistance with respect to the heat accompanying energy-beam irradiation that a glass transition temperature is -70 degreeC or more, More preferably, it is -66 degreeC or more. Moreover, if it is 15 degrees C or less, it is excellent at the point of the scattering prevention effect of the chip | tip after dicing in a wafer with a rough surface state, More preferably, it is 0 degrees C or less, More preferably, it is -28 degrees C or less.

  The polymer (A) described above may be produced in any manner, for example, one obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, or An acrylic copolymer having a functional group or a methacrylic copolymer (A1) having a functional group, and a functional group capable of reacting with the functional group, and an energy ray-curable carbon-carbon double bond What is obtained by making it react with the compound (A2) which has is used.

  Among them, as the methacrylic copolymer (A1) having the above functional group, a monomer (A1-1) having a carbon-carbon double bond such as an acrylic acid alkyl ester or a methacrylic acid alkyl ester, and carbon What is obtained by copolymerizing a monomer (A1-2) having a carbon double bond and having a functional group is exemplified. As the monomer (A1-1), hexyl acrylate having an alkyl chain having 6 to 12 carbon atoms, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, lauryl acrylate or alkyl chain And pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, methacrylates similar to these, and the like, which are monomers having a carbon number of 5 or less.

  In the monomer (A1-1), a component having 6 or more carbon atoms in the alkyl chain can reduce the peeling force between the pressure-sensitive adhesive layer and the adhesive layer, and is thus excellent in pick-up property. Further, the component of 12 or less has a low elastic modulus at room temperature and is excellent in the adhesive strength at the interface between the pressure-sensitive adhesive layer and the adhesive layer. When the adhesive strength at the interface between the pressure-sensitive adhesive layer and the adhesive layer is high, when the tape is expanded to cut the wafer, the interface displacement between the pressure-sensitive adhesive layer and the adhesive layer can be suppressed, and the cuttability is improved. Because it is preferable.

  Furthermore, since a glass transition temperature becomes low, so that carbon number of carbon number of an alkyl chain is used as a monomer (A1-1), the adhesive composition which has a desired glass transition temperature by selecting suitably Can be prepared. Moreover, it is also possible to mix | blend the low molecular weight compound which has carbon-carbon double bonds, such as vinyl acetate, styrene, an acrylonitrile etc., in order to raise various performances, such as compatibility, other than a glass transition temperature. In that case, these low molecular weight compounds shall be mix | blended within 5 mass% or less of the total mass of a monomer (A1-1).

  On the other hand, as a functional group which a monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group etc. can be mentioned, A monomer (A1-2) Specific examples of acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N -Methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride Acid, glycidyl aqua Rate, glycidyl methacrylate, it is possible to enumerate and allyl glycidyl ether.

  Furthermore, in the compound (A2), when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group, examples of the functional group to be used include a hydroxyl group, an epoxy group, an isocyanate group and the like. When it is a hydroxyl group, a cyclic acid anhydride group, an isocyanate group and the like can be mentioned, and when it is an amino group, an epoxy group, an isocyanate group and the like can be mentioned, and when it is an epoxy group A carboxyl group, a cyclic acid anhydride group, an amino group etc. can be mentioned, As a specific example, the thing similar to what was listed by the specific example of a monomer (A1-2) can be listed. In addition, as the compound (A2), a compound in which a part of the isocyanate group of the polyisocyanate compound is urethanized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond can also be used.

  In addition, in reaction of a compound (A1) and a compound (A2), a desired thing can be manufactured regarding characteristics, such as an acid value or a hydroxyl value, by leaving an unreacted functional group. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the adhesion after energy beam irradiation can be reduced to further reduce the risk of pickup error. Further, when the COOH group is left so that the acid value of the polymer (A) is 0.5 to 30, the improvement effect after restoration of the pressure-sensitive adhesive layer after the tape for processing a semiconductor of the present invention is obtained Is preferred. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in the reduction effect of the adhesive force after energy ray irradiation, and it is excellent in the fluidity of the adhesive after energy ray irradiation as it is 100 or less . Moreover, it is excellent in the point of tape restorability that an acid value is 0.5 or more, and excellent in the fluidity | liquidity point of an adhesive as it is 30 or less.

  In the synthesis of the polymer (A), as the organic solvent in the case of carrying out the reaction by solution polymerization, ketone type, ester type, alcohol type and aromatic type can be used, among which toluene, acetic acid In general, good solvents for acrylic polymers such as ethyl, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone etc., solvents having a boiling point of 60 to 120 ° C. are preferable, and as a polymerization initiator, α, α′-azobis Usually, radical generators such as azobis-based ones such as isobutyl nitrile and organic peroxide-based ones such as benzoyl peroxide are used. Under the present circumstances, a catalyst and a polymerization inhibitor can be used together as needed, and the polymer (A) of a desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. Further, with respect to controlling the molecular weight, it is preferable to use a solvent of mercaptan or carbon tetrachloride. The reaction is not limited to solution polymerization, and may be another method such as bulk polymerization or suspension polymerization.

  As described above, the polymer (A) can be obtained, but in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, the polymer (A) is excellent in that the cohesion can be enhanced. When the cohesion is high, there is an effect of suppressing the displacement at the interface with the adhesive layer at the time of expansion, and since the tensile force is easily transmitted to the adhesive layer, the dividability of the adhesive layer is improved. Preferred. When the molecular weight of the polymer (A) is 2,000,000 or less, it is excellent in terms of gelation suppression at the time of synthesis and at the time of coating. In addition, the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.

  In addition, in the semiconductor processing tape 10 of the present invention, the resin composition constituting the pressure-sensitive adhesive layer 12 may further have a compound (B) acting as a crosslinking agent in addition to the polymer (A). Good. For example, polyisocyanates, melamine / formaldehyde resins, and epoxy resins can be mentioned, and these can be used alone or in combination of two or more. The compound (B) reacts with the polymer (A) or the base film, and the resulting crosslinked structure makes it possible to use a pressure-sensitive adhesive based on the polymers (A) and (B) after application of the pressure-sensitive adhesive composition. The cohesion of can be improved.

  The polyisocyanates are not particularly limited. For example, 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenylether diisocyanate, 4,4 '-[2,2-bis (4) -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate And lysine diisocyanate, lysine triisocyanate, etc. Specifically, using Coronate L (Nippon Polyurethane Co., Ltd., trade name), etc. Kill. As the melamine / formaldehyde resin, specifically, Nicalac MX-45 (trade name of Sanwa Chemical Co., Ltd., trade name), Melan (trade name of Hitachi Chemical Co., Ltd., trade name) or the like can be used. As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) can be used. In the present invention, it is particularly preferable to use polyisocyanates.

  The adhesive layer which made the addition amount of a compound (B) 0.1 mass part or more with respect to 100 mass parts of polymers (A) is excellent at the point of cohesive force. More preferably, it is 0.5 parts by mass or more. In addition, the pressure-sensitive adhesive layer in which the content is 10 parts by mass or less is excellent in suppressing rapid gelation at the time of coating, and the workability such as blending and coating of the pressure-sensitive adhesive becomes good. More preferably, it is 5 parts by mass or less.

  In the present invention, the pressure-sensitive adhesive layer 12 may contain a photopolymerization initiator (C). There is no restriction | limiting in particular in a photoinitiator (C) contained in the adhesive layer 12, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethyl anthraquinone, t- Anthraquinones such as butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (rophine dimer), acridine compounds, etc. These can be used alone or in combination of two or more. As addition amount of a photoinitiator (C), it is preferable to mix | blend 0.1 mass part or more with respect to 100 mass parts of polymers (A), and 0.5 mass part or more is more preferable. The upper limit thereof is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

  Furthermore, a tackifier, an adhesion regulator, a surfactant and the like, or other modifiers and the like can be blended into the energy ray-curable pressure-sensitive adhesive used in the present invention as required. In addition, an inorganic compound filler may be added as appropriate.

  The pressure-sensitive adhesive layer 12 can be formed using a conventional method for forming a pressure-sensitive adhesive layer. For example, a method of applying the pressure-sensitive adhesive composition to a predetermined surface of the substrate film 11 or forming the pressure-sensitive adhesive composition, a separator (for example, a plastic film or sheet to which a release agent is applied) The pressure-sensitive adhesive layer 12 can be formed on the substrate film 11 by a method of applying the pressure-sensitive adhesive layer 12 onto the substrate surface 11 by transferring the pressure-sensitive adhesive layer 12 to a predetermined surface of the substrate. In addition, the adhesive layer 12 may have a form of a single layer, and may have a form of lamination.

  The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but a thickness of 2 μm or more is excellent in terms of tack force, and 5 μm or more is more preferable. It is excellent in pick-up property as it is 15 micrometers or less, and 10 micrometers or less are more preferable.

  The pressure-sensitive adhesive tape 15 has an average value of thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by a thermomechanical property tester in the MD (Machine Direction) direction and TD (Transverse Direction) direction. The sum with the average value of the thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester is a negative value, that is, less than 0. The MD direction is a flow direction at the time of film formation, and the TD direction is a direction perpendicular to the MD direction.

  The average value of the thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. measured at the temperature rise by the thermomechanical property tester in the MD direction of the adhesive tape 15 and the temperature rise by the thermomechanical property tester in the TD direction The tape 10 for semiconductor processing can be shrunk by heating at a low temperature for a short time by setting the sum of the measured value of 40 ° C. to 80 ° C. and the average value of the thermal deformation rate per 1 ° C. as a negative value. Therefore, even in the case of using a method in which a pair of hot air nozzles are circulated to heat shrink the portion of the semiconductor processing tape 10 where the slack occurs, the heat expansion is reduced without reducing the heat shrinkage many times. It is possible to remove the slack caused by the expansion in a short time and maintain the appropriate kerf width.

The thermal deformation rate can be calculated from the following equation (1) by measuring the amount of deformation due to temperature according to JIS K7197: 2012.
Thermal deformation rate TMA (%) = (amount of deformation of sample length / sample length before measurement) x 100 (1)
The amount of deformation is shown with the expansion direction of the sample being positive and the contraction direction being negative.

The thermal deformation rate between 40 ° C. and 80 ° C. is like the curve in the MD direction or the curve in the TD direction in FIG. 9, and the sum of the average value in the MD direction and the average value in the TD direction is a negative value It means that the adhesive tape generally exhibits shrinking behavior between 40 ° C and 80 ° C.
In order to make the sum of the average value of the thermal deformation rate in the MD direction and the average value of the thermal deformation rate in the TD direction a negative value, a step of stretching the resin film after film formation is added to constitute the adhesive tape 15 It is preferable to adjust the thickness of the adhesive tape 15 and the amount of extension in the MD direction or the TD direction according to the type of resin. As a method of stretching the adhesive tape in the TD direction, a method using a tenter, a method by blow molding (inflation), a method using an expand roll, etc. may be mentioned, and as a method of stretching in the MD direction A method, a method of pulling in a conveyance roll, etc. may be mentioned. Any method may be used as a method of obtaining the adhesive tape 15 of the present invention.

<Adhesive layer>
In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 is to be separated from the pressure-sensitive adhesive layer 12 and attached to the chip when picking up the chip after the wafer is bonded and diced. And it is used as an adhesive at the time of fixing a chip to a substrate or a lead frame.

  The adhesive layer 13 is not particularly limited as long as it is a film-like adhesive generally used for wafers, and includes, for example, one containing a thermoplastic resin and a thermally polymerizable component. . The thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin having thermoplasticity in an uncured state and forming a crosslinked structure after heating, and is not particularly limited. One embodiment includes a thermoplastic resin having a weight average molecular weight of 5,000 to 200,000, and a glass transition temperature of 0 to 150 ° C. Moreover, the thermoplastic resin which is a weight average molecular weight 100,000-1,000,000, and whose glass transition temperature is -50-20 degreeC as another aspect is mentioned.

  As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyether imide resin, polyamide imide resin, polyester resin, polyester imide resin, phenoxy resin, polysulfone resin, polyether sulfone resin, polyphenylene sulfide resin, polyether ketone Resin etc. are mentioned, It is preferable to use a polyimide resin and a phenoxy resin especially, and it is preferable to use the polymer containing a functional group as a latter thermoplastic resin.

  The polyimide resin can be obtained by condensation reaction of tetracarboxylic acid dianhydride and diamine by a known method. That is, in an organic solvent, equimolar or nearly equimolar amounts of tetracarboxylic acid dianhydride and diamine are used (the order of addition of each component is optional), and the addition reaction is carried out at a reaction temperature of 80 ° C. or less, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases to form a polyamic acid which is a precursor of polyimide. This polyamic acid can also adjust its molecular weight by heating at a temperature of 50 to 80 ° C. for depolymerization. The polyimide resin can be obtained by dehydrating and ring-closing the above-mentioned reactant (polyamic acid). The dehydration ring closure can be carried out by a heat ring closure method of heat treatment and a chemical ring closure method using a dehydrating agent.

  There is no restriction | limiting in particular as a tetracarboxylic acid dianhydride used as a raw material of a polyimide resin, For example, 1, 2- (ethylene) bis (trimellitate anhydride), 1,3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramethylene) bis (trimellitate anhydride), 1,5- (pentamethylene) bis (trimellitate anhydride), 1,6- (hexamethylene) bis (trimellitate anhydride), 1,7- ( Heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimellitate anhydride), 1,9- (nonamethylene) bis (trimellitate anhydride), 1,10- (decamethylene) bis (trimellitate anhydride ), 1,12- (dodecamethylene) bis (trimelitate anhydride), 1,16- (hexadeca) Tyrene) bis (trimellitate anhydride), 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic acid dianhydride, 2,2 ', 3,3'-biphenyltetracarboxylic acid dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) Propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylene Tracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic acid dianhydride, 3,4,3 ', 4'-benzophenone Tetracarboxylic acid dianhydride, 2,3,2 ', 3'-benzophenonetetracarboxylic acid dianhydride, 3,3,3', 4'-benzophenonetetracarboxylic acid dianhydride, 1,2,5,6 -Naphthalenetetracarboxylic acid dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 1,2,4,5-naphthalene Tetracarboxylic acid dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride , 2, 3, 6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride, phenanthrene-1,8,9,10-tetracarboxylic acid dianhydride, pyrazine-2,3,5,6- Tetracarboxylic acid dianhydride, thiophene-2,3,5,6-tetracarboxylic acid dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic acid dianhydride, 3,4,3', 4 '-Biphenyltetracarboxylic acid dianhydride, 2,3,2', 3'-biphenyltetracarboxylic acid dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-) Dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene , 1,3-Bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylene bis (trimellitate anhydride), ethylene tetracarboxylic acid dianhydride 1,2,3,4-butanetetracarboxylic acid dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic acid dianhydride, 4,8-dimethyl-1,2,3,5, 6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic acid dianhydride, cyclopentane-1,2,3,4-tetracarboxylic acid dianhydride, pyrrolidine-2,3,4,5 -Tetracarboxylic acid dianhydride, 1,2,3,4-cyclobutanetetracarboxylic acid dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid dianhydride, bicyclo- [2, 2, ] -Oct-7-ene-2,3,5,6-tetracarboxylic acid dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [ 4- (3,4-Dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxy) Hexafluoroisopropyl) benzene bis (trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzene bis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl)- 3-Methyl-3-cyclohexene-1,2-dicarboxylic acid dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic acid dianhydride, etc. Can be used, and one or more of these can be used in combination.

In addition, there is no particular limitation on diamine used as a raw material of polyimide, and, for example, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4 -Amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone , 3, 4 '-Jia No-diphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone, 3 4,4′-diaminodiphenyl ketone, 4,4′-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 ′-(3,4′-diaminodiphenyl) propane, 2,2- Bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4-amino) Phenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) benzene, 1,4-bis (3-amino) Nophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3,4 ′-(1,4-phenylene Bis (1-methylethylidene)) bisaniline, 4,4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2 , 2-Bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy) ) Phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy) phenyl) s , Aromatic diamines such as bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1,3-bis (aminomethyl) cyclohexane , Sun Techno Chemical Co., Ltd. Jeffamine D-230, D-400, D-2000, D-40 0, Aliphatic diamines such as polyoxyalkylene diamines such as ED-600, ED-900, ED-2001, EDR-148, etc. can be used, and one or more of these can be used in combination . The glass transition temperature of the polyimide resin is preferably 0 to 200 ° C., and the weight average molecular weight is preferably 10,000 to 200,000.
(Wherein, R 1 and R 2 each represent a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R 3 and R 4 each represent a monovalent hydrocarbon group of BRBR>, Each may be the same or different, and m is an integer of 1 or more)

  The phenoxy resin which is one of the preferable thermoplastic resins other than the above is preferably a resin obtained by a method of reacting various bisphenols and epichlorohydrin, or a method of reacting a liquid epoxy resin and bisphenols. And bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F and bisphenol S. The phenoxy resin has good compatibility with the epoxy resin because of its similar structure to the epoxy resin, and is suitable for imparting good adhesion to the adhesive film.

As a phenoxy resin used by this invention, resin which has a repeating unit represented, for example by following General formula (2) is mentioned.

In the above general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, -O-, -S-, -SO- or -SO _2- . Here, a C1-C10 alkylene group is preferable and, as for the alkylene group, -C (R1) (R2)-is more preferable. R1 and R2 each represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, isopropyl, isooctyl and 2-ethylhexyl And 1,3,3-trimethylbutyl and the like. The alkyl group may be substituted with a halogen atom, and examples include trifluoromethyl group. X is preferably an alkylene group, -O-, -S-, a fluorene group or -SO _2-, and more preferably an alkylene group, -SO _2- . Of _{these, -C (CH 3) 2 -} , - CH (CH 3) -, - CH 2 -, - SO 2 - are _{preferred, -C (CH 3) 2 -} , - CH (CH 3) -, - CH ₂ -, more preferably, -C _{(CH 3) 2} - is particularly preferred.

  If the phenoxy resin represented by the above general formula (2) has a repeating unit, even if it is a resin having a plurality of repeating units in which X in the above general formula (2) is different, the same repeating unit with X It may consist only of In the present invention, a resin in which X is composed only of the same repeating unit is preferable.

  In addition, when the phenoxy resin represented by the above general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermally polymerizable component is improved, and a uniform appearance and characteristics are imparted. be able to.

  When the mass average molecular weight of the phenoxy resin is 5,000 or more, it is excellent in the film formability. More preferably, it is 10,000 or more, further preferably 30,000 or more. Further, a mass average molecular weight of 150,000 or less is preferable from the viewpoint of fluidity at the time of heat and pressure bonding and compatibility with other resins. More preferably, it is 100,000 or less. Moreover, it is excellent at a film formation property as a glass transition temperature is -50 degreeC or more, More preferably, it is 0 degreeC or more, More preferably, it is 50 degreeC or more. The adhesive force of the adhesive layer 13 at the time of die bonding is excellent in glass transition temperature being 150 degreeC, More preferably, it is 120 degrees C or less, More preferably, it is 110 degrees C or less.

  On the other hand, examples of the functional group in the polymer containing a functional group include glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group and the like, among which glycidyl group is preferred. .

  As a high molecular weight component containing the said functional group, the (meth) acrylic copolymer etc. which contain functional groups, such as a glycidyl group, a hydroxyl group, a carboxyl group, etc. are mentioned, for example.

  As said (meth) acrylic copolymer, a (meth) acrylic ester copolymer, acrylic rubber, etc. can be used, for example, An acrylic rubber is preferable. An acrylic rubber is a rubber which has an acrylic ester as a main component and is mainly made of a copolymer of butyl acrylate and acrylonitrile, a copolymer of ethyl acrylate and acrylonitrile, and the like.

  As a functional group, when it contains glycidyl group, 0.5 to 6.0 weight% is preferable, as for the quantity of a glycidyl group containing repeating unit, 0.5 to 5.0 weight% is more preferable, and 0.8 to 5 .0 wt% is particularly preferred. The glycidyl group-containing repeating unit is a constituent monomer of a (meth) acrylic copolymer containing a glycidyl group, and specifically, is glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is in this range, adhesion can be secured and gelation can be prevented.

  As a component monomer of said (meth) acrylic copolymers other than glycidyl acrylate and glycidyl methacrylate, an ethyl (meth) acrylate, a butyl (meth) acrylate etc. are mentioned, for example, These are individual or combination of 2 or more types Can also be used. In the present invention, ethyl (meth) acrylate indicates ethyl acrylate and / or ethyl methacrylate. The mixing ratio in the case of using functional monomers in combination may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. When the glass transition temperature is -50 ° C. or higher, it is preferable in that the film formability is excellent and excessive tack at normal temperature can be suppressed. When the tack strength at normal temperature is excessive, the handling of the adhesive layer becomes difficult. More preferably, it is -20 degreeC or more, More preferably, it is 0 degreeC or more. When the glass transition temperature is 30 ° C. or less, the adhesive strength of the adhesive layer at the time of die bonding is excellent, and more preferably 20 ° C. or less.

  When producing the high molecular weight component which contains a functional monomer by polymerizing the above-mentioned monomer, there is no restriction in particular as the polymerization method, for example, methods, such as pearl polymerization and solution polymerization, can be used, and among them, pearl polymerization Is preferred.

In the present invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, the film forming property is excellent, more preferably 200,000 or more, still more preferably 500,000 or more. . In addition, when the weight average molecular weight is adjusted to 2,000,000 or less, the heat flowability of the adhesive layer at the time of die bonding is improved. When the heat flowability of the adhesive layer at the time of die bonding is improved, the adhesion between the adhesive layer and the adherend becomes good and the adhesive strength can be improved. Further, the unevenness of the adherend is filled and the void can be easily suppressed. Become. More preferably, it is 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, an even greater effect can be obtained.

  The thermally polymerizable component is not particularly limited as long as it is polymerized by heat, and, for example, functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group and amide group And compounds having a group and a trigger material, which may be used alone or in combination of two or more, but in view of heat resistance as an adhesive layer, they are cured by heat and have an adhesive action It is preferable to contain the thermosetting resin to be exerted together with a curing agent and an accelerator. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, urea resin and the like, and in particular, heat resistance, workability and reliability. It is most preferable to use an epoxy resin in that an adhesive layer excellent in the above is obtained.

  The above epoxy resin is not particularly limited as long as it cures and has an adhesive action, and a bifunctional epoxy resin such as bisphenol A epoxy, a novolac epoxy resin such as phenol novolac epoxy resin and cresol novolac epoxy resin Etc can be used. In addition, generally known ones such as polyfunctional epoxy resin, glycidyl amine type epoxy resin, heterocycle-containing epoxy resin or alicyclic epoxy resin can be applied.

  As the above-mentioned bisphenol A type epoxy resin, Mitsubishi Chemical Co., Ltd. Epi coat series (Epi coat 807, Epi coat 815, Epi coat 825, Epi coat 827, Epi coat 828, Epi coat 834, Epi coat 1001, Epi coat 1004, Epi coat 1007, Epi coat 1009), Dow The chemical company make, DER-330, DER-301, DER-361, Nippon Steel Sumikin Chemical Co., Ltd. make, YD8125, YDF8170 etc. are mentioned. Examples of the above-mentioned phenol novolac epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Mitsubishi Chemical Co., Ltd., EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., etc. As the novolac type epoxy resin, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-102, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., Nippon Steel Sumikin Chemical Co., Ltd., YDCN 701, YDCN 702, YDCN 703, YDCN 704, etc. may be mentioned. As said polyfunctional epoxy resin, Epon1031S by Mitsubishi Chemical Co., Ltd., Araldite 0163 by Ciba Specialty Chemicals Co., Ltd., Denacol EX-611, EX-614, EX-614B, EX-622 by Nagase ChemteX Co., Ltd. , EX-512, EX-521, EX-421, EX-411, EX-321 and the like. As the above amine type epoxy resin, Epicoat 604 manufactured by Mitsubishi Chemical Co., Ltd., YH-434 manufactured by Toto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., manufactured by Sumitomo Chemical Co., Ltd. ELM-120 etc. are mentioned. Examples of the above-mentioned heterocycle-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL 4234 and ERL 4299 manufactured by UCC, ERL 4221, ERL 4206 and the like. These epoxy resins can be used alone or in combination of two or more.

  Additives can be added as appropriate to cure the thermosetting resin. As such an additive, a hardening agent, a hardening accelerator, a catalyst etc. are mentioned, for example, When adding a catalyst, a co-catalyst can be used as needed.

When using an epoxy resin for the said thermosetting resin, it is preferable to use an epoxy resin hardening | curing agent or a hardening accelerator, and it is more preferable to use these together. As the curing agent, for example, phenol resin, dicyandiamide, boron trifluoride complex compound, organic hydrazide compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polymercaptan compound, polysulfide resin having a mercapto group at an end , Acid anhydrides, light and ultraviolet curing agents. These can be used alone or in combination of two or more.
Among them, boron trifluoride complex compounds include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and organic hydrazide compounds include isophthalic acid dihydrazide.

  As the phenol resin, for example, novolac type phenol resin such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin, polysol such as resol type phenol resin, polyparaoxystyrene etc. It can be mentioned. Among them, phenolic compounds having at least two phenolic hydroxyl groups in the molecule are preferred.

  As a phenol type compound which has at least two phenolic hydroxyl groups in the above-mentioned molecule, for example, phenol novolac resin, cresol novolac resin, t-butylphenol novolac resin, dicyclopentadiene cresol novolac resin, dicyclopentadiene phenol novolac resin, Xylylene modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolac resin, poly-p-vinylphenol resin, phenol aralkyl resin and the like. Further, among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable, and connection reliability can be improved.

  As the amines, linear aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethylamine) Aminomethyl) phenol, m-xylenediamine, etc., cyclic aliphatic amines (N-aminoethyl piperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensene diamine, iso Folone diamine, 1,3-bis (aminomethyl) cyclohexane, etc., heterocyclic amine (piperazine, N, N-dimethyl piperazine, triethylene diamine, melamine, guanamine etc.), aromatic amine (methaphenylene diamine, 4,4 ' -Diamino dif Nilmethane, diamino, 4,4'-diaminodiphenyl sulfone, etc., polyamide resin (polyamidoamine is preferable, and a condensation product of dimer acid and polyamine), imidazole compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methyl) Imidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, epoxy imidazole adduct, etc., urea or thiourea compound (N, N-dialkylurea) Compounds, N, N-dialkylthiourea compounds, etc., polymercaptan compounds, polysulfide resins having mercapto group at the end, acid anhydrides (tetrahydrophthalic anhydride etc.), light / ultraviolet curing agents Feto, triphenylsulfonium hexafluorophosphate and the like) are exemplified.

The curing accelerator is not particularly limited as long as it cures a thermosetting resin, and for example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl- 4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecen-7-tetraphenylborate and the like can be mentioned.
The imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -Benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole and the like .

  The content of the curing agent or curing accelerator for epoxy resin in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of curing agent or curing accelerator.

  It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin, for example so that the hydroxyl group in a phenol resin will be 0.5-2.0 equivalent per 1 equivalent of epoxy groups in the said epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, when the mixing ratio of the both is out of the above range, a sufficient curing reaction does not proceed, and the characteristics of the adhesive layer are easily deteriorated. The other thermosetting resin and the curing agent are, in one embodiment, 0.5 to 20 parts by mass of the curing agent with respect to 100 parts by mass of the thermosetting resin, and in the other embodiment, the curing agent is It is 1 to 10 parts by mass. The content of the curing accelerator is preferably smaller than the content of the curing agent, and the curing accelerator is preferably 0.001 to 1.5 parts by mass, and 0.01 to 0. 100 parts by mass of the thermosetting resin. 95 parts by weight is more preferred. By adjusting to the said range, advancing of sufficient hardening reaction can be assisted. 0.001-1.5 mass parts is preferable with respect to 100 mass parts of thermosetting resins, and, as for content of a catalyst, 0.01-1.0 mass parts is more preferable.

Moreover, the adhesive agent layer 13 of this invention can mix | blend a filler suitably according to the use. As a result, the dicing property of the adhesive layer in the uncured state is improved, the handleability is improved, the melt viscosity is adjusted, the thixotropic property is imparted, and the thermal conductivity of the adhesive layer in the cured state is imparted, the adhesive strength It is possible to improve the
As a filler used by this invention, an inorganic filler is preferable. The inorganic filler is not particularly limited. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate, boron nitride Crystalline silica, amorphous silica, antimony oxide and the like can be used. Moreover, these can also be used individually or in mixture of 2 or more types.

  Further, among the above-mentioned inorganic fillers, it is preferable to use alumina, aluminum nitride, boron nitride, crystalline silica, non-crystalline silica or the like from the viewpoint of improving the thermal conductivity. In addition, from the viewpoint of adjusting the melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica It is preferable to use amorphous silica or the like. Further, from the viewpoint of improving the dicing property, it is preferable to use alumina or silica.

  It is excellent at the point of wire bonding property as the content rate of a filler is 30 mass% or more. At the time of wire bonding, it is preferable that the storage elastic modulus after curing of the adhesive layer bonding the chip that strikes the wire be adjusted in the range of 20 to 1000 MPa at 170 ° C., and the content ratio of the filler is 30 mass% or more It is easy to adjust the storage elastic modulus after hardening of an adhesive bond layer to this range. In addition, when the content ratio of the filler is 75% by mass or less, the film formability and the heat flowability of the adhesive layer at the time of die bonding are excellent. When the heat flowability of the adhesive layer at the time of die bonding is improved, the adhesion between the adhesive layer and the adherend becomes good and the adhesive strength can be improved. Further, the unevenness of the adherend is filled and the void can be easily suppressed. Become. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.

  The adhesive layer of the present invention can contain, as the filler, two or more fillers having different average particle sizes. In this case, it becomes easy to prevent the viscosity increase when the content ratio of the filler is high or the viscosity decrease when the content ratio of the filler is low in the raw material mixture before film formation as compared with the case where a single filler is used, Good film formation is easily obtained, the flowability of the uncured adhesive layer can be optimally controlled, and excellent adhesion can be easily obtained after curing of the adhesive layer.

In the adhesive layer of the present invention, the average particle diameter of the filler is preferably 2.0 μm or less, more preferably 1.0 μm or less. When the average particle diameter of the filler is 2.0 μm or less, thinning of the film is facilitated. Here, the thin film implies a thickness of 20 μm or less. Moreover, the dispersibility is favorable in it being 0.01 micrometer or more.
Furthermore, from the viewpoint of improving the adhesion after curing of the adhesive layer, which controls the flowability of the uncured adhesive layer optimally to prevent the viscosity increase or decrease of the raw material mixture before film formation, the average particle diameter It is preferable to include a first filler in the range of 0.1 to 1.0 μm, and a second filler having an average primary particle diameter in the range of 0.005 to 0.03 μm. A first filler having an average particle diameter in the range of 0.1 to 1.0 μm and having particles of 99% or more distributed in the range of the particle diameter 0.1 to 1.0 μm, and an average of the primary particle diameter It is preferable to include a second filler in which the particle size is in the range of 0.005 to 0.03 μm, and particles of 99% or more are distributed in the range of the particle size of 0.005 to 0.1 μm.
The average particle size in the context of the present invention means the D50 value of the cumulative volume distribution curve, in which 50% by volume of the particles have a diameter smaller than this value. In the present invention, the average particle size or D50 value is measured by laser diffraction, for example using a Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using diffraction of laser light, based on the application of either Fraunhofer or Mie theory. In the present invention, the Mie theory or the modified Mie theory for non-spherical particles is used, and the average particle size or D50 value relates to scatterometry at 0.02 to 135 ° with respect to the incident laser beam.

In the present invention, in one aspect, the thermoplastic resin having a weight average molecular weight of 5000 to 200,000 of 10 to 40% by mass and 10 to 40% by mass with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13 And a filler of 30 to 75% by mass. In this embodiment, the content of the filler may be 30 to 60% by mass, or 40 to 60% by mass. In addition, the mass average molecular weight of the thermoplastic resin may be 5,000 to 150,000, or 10,000 to 100,000.
In another embodiment, 20 to 50% by mass of a thermoplastic resin having a weight average molecular weight of 200,000 to 2,000,000 and a weight average molecular weight of 10 to 20% by mass with respect to the entire pressure-sensitive adhesive composition constituting the adhesive layer 13 And a filler of 30 to 75% by mass. In this embodiment, the content of the filler may be 30 to 60% by mass, and may be 30 to 50% by mass. In addition, the mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, and may be 200,000 to 800,000.
By adjusting the compounding ratio, the storage elastic modulus and the flowability after curing of the adhesive layer 13 can be optimized, and the heat resistance at a high temperature tends to be sufficiently obtained.

  In the tape 10 for semiconductor processing of the present invention, the adhesive layer 13 may be formed by laminating, in advance or indirectly, a film (hereinafter referred to as an adhesive film) on the base film 11. . The temperature during lamination is preferably in the range of 10 to 100 ° C., and a linear pressure of 0.01 to 10 N / m is preferably applied. Note that such an adhesive film may be one in which the adhesive layer 13 is formed on a peeling film, in which case the peeling film may be peeled after lamination, or the tape 10 for semiconductor processing as it is. It may be used as a cover film of the above, and it may exfoliate when pasting a wafer.

  The adhesive film may be laminated on the entire surface of the pressure-sensitive adhesive layer 12, but even if the adhesive film 12 is laminated on the pressure-sensitive adhesive layer 12, the adhesive film is cut (precut) into a shape corresponding to the wafer to be bonded beforehand. Good. Thus, when the adhesive film according to the wafer is laminated, as shown in FIG. 3, the adhesive layer 13 is present at the portion to which the wafer W is to be bonded, and the portion to which the ring frame 20 is to be bonded There is no adhesive layer 13 and only the adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a precut adhesive film, and the ring is removed at the time of tape peeling after use. An effect that adhesive residue to the frame 20 does not easily occur is obtained.

<Use>
The semiconductor processing tape 10 of the present invention is used in a method of manufacturing a semiconductor device including an expanding step of dividing the adhesive layer 13 at least by expansion. Therefore, the other steps and the order of steps are not particularly limited. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (E).

Semiconductor device manufacturing method (A)
(A) bonding a surface protection tape to the wafer surface on which the circuit pattern is formed;
(B) a back grinding step of grinding the back side of the wafer;
(C) bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the tape for semiconductor processing to the back surface of the wafer while heating the wafer at 70 to 80 ° C .;
(D) peeling a surface protection tape from the wafer surface;
(E) irradiating a portion of the wafer to be divided with a laser beam to form a modified region by multiphoton absorption inside the wafer;
(F) expanding the semiconductor processing tape to divide the wafer and the adhesive film along a dividing line to obtain a plurality of chips with an adhesive film;
(G) a step of removing a slack generated in the expanding step by heating and shrinking a portion of the tape for semiconductor processing not overlapping with the chip, and holding a gap between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing;
And manufacturing a semiconductor device.
The manufacturing method of the present semiconductor device is a method using stealth dicing.

Semiconductor device manufacturing method (B)
(A) bonding a surface protection tape to the wafer surface on which the circuit pattern is formed;
(B) a back grinding step of grinding the back side of the wafer;
(C) bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape to the back surface of the wafer while heating the wafer at 70 to 80 ° C .;
(D) peeling a surface protection tape from the wafer surface;
(E) irradiating a laser beam from the surface of the wafer along a dividing line to divide into individual chips;
(F) expanding the tape for semiconductor processing to divide the adhesive film correspondingly to the chip to obtain a plurality of chips with adhesive film;
(G) a step of removing a slack generated in the expanding step by heating and shrinking a portion of the tape for semiconductor processing not overlapping with the chip, and holding a gap between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing;
And manufacturing a semiconductor device.
The method of manufacturing the semiconductor device is a method using full-cut laser dicing.

Semiconductor device manufacturing method (C)
(A) bonding a surface protection tape to the wafer surface on which the circuit pattern is formed;
(B) a back grinding step of grinding the back side of the wafer;
(C) bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the semiconductor processing tape to the back surface of the wafer while heating the wafer at 70 to 80 ° C .;
(D) peeling a surface protection tape from the wafer surface;
(E) cutting the wafer along a parting line using a dicing blade to divide into individual chips;
(F) expanding the tape for semiconductor processing to divide the adhesive film correspondingly to the chip to obtain a plurality of chips with adhesive film;
(G) a step of removing a slack generated in the expanding step by heating and shrinking a portion of the tape for semiconductor processing not overlapping with the chip, and holding a gap between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing;
And manufacturing a semiconductor device.
The manufacturing method of the present semiconductor device is a method using full-cut blade dicing.

Semiconductor device manufacturing method (D)
(A) cutting the wafer on which the circuit pattern has been formed using a dicing blade to a depth less than the thickness of the wafer along the dividing line schedule line;
(B) bonding a surface protection tape to the wafer surface;
(C) a back grinding step of grinding the back side of the wafer;
(D) bonding an adhesive film bonded to the pressure-sensitive adhesive layer of the tape for processing a semiconductor on the back surface of the chip while heating the wafer at 70 to 80 ° C .;
(E) peeling a surface protection tape from the wafer surface;
(F) expanding the tape for semiconductor processing to divide the adhesive film correspondingly to the chip to obtain a plurality of chips with adhesive film;
(G) a step of removing a slack generated in the expanding step by heating and shrinking a portion of the tape for semiconductor processing not overlapping with the chip, and holding a gap between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing;
And manufacturing a semiconductor device.
The method of manufacturing the semiconductor device is a method using half-cut blade dicing.

Semiconductor device manufacturing method (E)
(A) bonding a surface protection tape to the wafer surface on which the circuit pattern is formed;
(B) irradiating a portion of the wafer to be divided with a laser beam to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding step of grinding the back side of the wafer;
(D) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .;
(E) peeling the surface protection tape from the wafer surface;
(F) expanding the semiconductor processing tape to divide the wafer and the adhesive layer along a dividing line to obtain a plurality of chips with an adhesive film;
(G) heat shrinkage of a portion of the tape for semiconductor processing not overlapping with the chip, thereby removing slack generated in the expanding step to maintain the distance between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing;
And manufacturing a semiconductor device.
The manufacturing method of the present semiconductor device is a method using stealth dicing.

<How to use>
The method of using the tape in the case where the tape 10 for semiconductor processing of the present invention is applied to the method (A) for manufacturing a semiconductor device will be described with reference to FIGS. First, as shown in FIG. 2, a surface protection tape 14 for circuit pattern protection, which contains an ultraviolet curable component in an adhesive, is bonded to the surface of the wafer W on which the circuit pattern is formed. Implement a back grinding process to grind.

  After completion of the back grinding process, as shown in FIG. 3, the wafer W is mounted with the front side down on the heater table 25 of the wafer mounter, and then the semiconductor processing tape 10 is bonded to the back surface of the wafer W. Do. The semiconductor processing tape 10 used here is obtained by laminating an adhesive film which has been cut (precut) in advance in a shape corresponding to the wafer W to be bonded, and in the surface to be bonded to the wafer W, the adhesive layer The adhesive layer 12 is exposed around the area where the 13 is exposed. The portion of the semiconductor processing tape 10 to which the adhesive layer 13 is exposed is attached to the back surface of the wafer W, and the portion to which the adhesive layer 12 around the adhesive layer 13 is exposed is attached to the ring frame 20. At this time, the heater table 25 is set to 70 to 80 ° C., whereby the heat bonding is performed. In the present embodiment, the pressure-sensitive adhesive tape 15 composed of the base film 11 and the pressure-sensitive adhesive layer 12 provided on the base film 11, and the adhesive layer 13 provided on the pressure-sensitive adhesive layer 12 Although the semiconductor processing tape 10 is used, an adhesive tape and a film adhesive may be used respectively. In this case, first, a film adhesive is bonded to the back surface of the wafer to form an adhesive layer, and the adhesive layer of the adhesive tape is bonded to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as an adhesive tape.

Next, the wafer W bonded with the semiconductor processing tape 10 is unloaded from the heater table 25 and placed on the suction table 26 with the semiconductor processing tape 10 side down, as shown in FIG. 4. Then, from the upper side of the wafer W suction-fixed on the suction table 26, UV light of, for example, 1000 mJ / cm ² is irradiated to the substrate surface side of the surface protection tape 14 using the energy ray light source 27. The adhesion to the wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W.

  Next, as shown in FIG. 5, laser light is irradiated to a portion to be divided of the wafer W to form a modified region 32 by multiphoton absorption inside the wafer W.

  Next, as shown in FIG. 6A, the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding apparatus with the base film 11 side down. .

  Next, as shown in FIG. 6B, in a state where the ring frame 20 is fixed, the push-up member 22 of the hollow cylindrical shape of the expanding device is raised to expand the semiconductor processing tape 10. As the expansion condition, the expanding speed is, for example, 5 to 500 mm / sec, and the expanding amount (pushing amount) is, for example, 5 to 25 mm. As described above, the semiconductor processing tape 10 is stretched in the radial direction of the wafer W, whereby the wafer W is divided into chips 34 starting from the modified region 32. At this time, although the adhesive layer 13 is restrained from elongation (deformation) due to expansion at a portion adhering to the back surface of the wafer W and breakage does not occur, tension due to expansion of the tape is concentrated at the position between the chips 34 And break. Therefore, as shown in FIG. 6C, the adhesive layer 13 is also divided together with the wafer W. Thereby, a plurality of chips 34 with the adhesive layer 13 can be obtained.

  Next, as shown in FIG. 7, the push-up member 22 is returned to its original position, and the slack of the semiconductor processing tape 10 generated in the previous expanding step is removed to stably maintain the distance between the chips 34. Perform the process. In this step, for example, a hot air nozzle 29 is used to form a hot air nozzle at a temperature of 40 to 120 ° C. in the annular heat-shrinkable area 28 between the area where the tip 34 of the semiconductor processing tape 10 is present and the ring frame 20. To heat shrink the base film 11 and make the semiconductor processing tape 10 taut. Thereafter, the adhesive layer 12 is subjected to an energy ray curing process, a thermal curing process or the like to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.

In addition, although the tape 10 for semiconductor processing by this Embodiment becomes a structure provided with the adhesive bond layer 13 on the adhesive layer 12, you may comprise, without providing the adhesive bond layer 13. FIG. In this case, the wafer may be bonded onto the pressure-sensitive adhesive layer 12 and used to separate only the wafer, or the adhesive produced in the same manner as the adhesive layer 13 when using the tape for semiconductor processing A film may be bonded to the wafer together with the wafer on the pressure-sensitive adhesive layer 12 to separate the wafer from the adhesive film.
<Example>
Next, in order to further clarify the effects of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

[Production of tape for semiconductor processing]
(1) Production of base film <base film A>
Zinc ionomer of ethylene-methacrylic acid-ethyl methacrylate copolymer synthesized by radical polymerization method (methacrylic acid content 15%, ethyl methacrylate content 5%, softening point 72 ° C., melting point 90 ° C., density Resin beads of 0.96 g / cm ³ and zinc ion content of 5% by mass were melted at 230 ° C. and molded into a long film of 150 μm thickness using an extruder. Thereafter, the base film A was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base Film B>
A base film B was produced in the same manner as the base film A except that the thickness of the long film was 180 μm and the long film was stretched in the TD direction to a thickness of 90 μm.

<Base Film C>
A base film C was produced in the same manner as the base film A, except that the thickness of the long film was 215 μm and the long film was stretched in the TD direction to a thickness of 90 μm.

<Base Film D>
Zinc ionomer of ethylene-methacrylic acid-isobutyl methacrylate copolymer synthesized by radical polymerization method (methacrylic acid content 11%, isobutyl methacrylate content 9%, softening point 64 ° C., melting point 83 ° C., density Resin beads of 0.95 g / cm ³ and a zinc ion content of 4% by mass were melted at 230 ° C., and formed into a long film of 150 μm thick using a extruder. Thereafter, the base film D was produced by stretching the long film in the TD direction so as to have a thickness of 90 μM.

<Base Film E>
Resin beads in which the hydrogenated styrene thermoplastic elastomer and homopropylene (PP) were mixed at a compounding ratio of 52:48 were melted at 200 ° C., and a long film having a thickness of 150 μm was formed using an extruder. Thereafter, the base film E was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base Film F>
Resin beads in which the hydrogenated styrene thermoplastic elastomer and homopropylene (PP) were mixed at a compounding ratio of 64: 36 were melted at 200 ° C. and molded into a long film having a thickness of 150 μm using an extruder. Thereafter, the base film F was produced by stretching the long film in the TD direction so as to have a thickness of 90 μm.

<Base Film G>
A base film G was produced in the same manner as the base film A, except that the thickness of the long film was 150 μm, and the long film was stretched in the MD direction to a thickness of 90 μm.

<Base Film H>
A base film H was produced in the same manner as the base film D, except that the thickness of the long film was 150 μm, and the long film was stretched in the MD direction to a thickness of 90 μm.

<Base Film I>
A substrate film I was produced in the same manner as the substrate film A, except that the thickness of the long film was 90 μm and the stretching treatment of the long film was not performed.

<Base Film J>
A substrate film J was produced in the same manner as the substrate film D except that the thickness of the long film was 90 μm and the stretching treatment of the long film was not performed.

<Base film K>
A substrate film K was produced in the same manner as the substrate film E except that the thickness of the long film was 90 μm and the stretching treatment of the long film was not performed.

<Base Film L> A base film K was produced in the same manner as the base film F, except that the thickness of the long film was 90 μm, and the stretching process of the long film was not performed.

<Base Film M>
A base film M was produced in the same manner as the base film A, except that the thickness of the long film was 110 μm, and the long film was stretched in the TD direction to a thickness of 90 μm.

<Base film N>
A base film N was produced in the same manner as the base film A, except that the thickness of the long film was 120 μm and the long film was stretched in the TD direction to a thickness of 90 μm.

(2) Preparation of acrylic copolymer As the acrylic copolymer (A1) having a functional group, it comprises 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the proportion of 2-ethylhexyl acrylate is 60 mol% A copolymer having a weight average molecular weight of 700,000 was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 25 and an acrylic copolymer having a glass transition temperature of -50 ° C, a hydroxyl value of 10 mg KOH / g, and an acid value of 5 mg KOH / g was prepared. .

(3) Preparation of adhesive composition 40 parts by mass of epoxy resin "1002" (Mitsubishi Chemical Co., Ltd., solid bisphenol A epoxy resin, epoxy equivalent 600), epoxy resin "806" (trade name of Mitsubishi Chemical Co., Ltd.) 100 parts by mass of bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20), 5 parts by mass of curing agent "Dyhard 100 SF" (trade name of Degussa, dicyandiamide), silica filler "SO-C2" (product of Adma Fine Co., Ltd. Composition comprising 200 parts by weight of average particle size 0.5 μm, and 3 parts by weight of silica filler “Aerosil R 972” (trade name of Nippon Aerosil Co., Ltd., average particle size of primary particle diameter 0.016 μm) The mixture was stirred and mixed to obtain a homogeneous composition.
100 parts by mass of phenoxy resin "PKHH" (trade name of INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.), and "KBM-802" as a coupling agent (trade name of Shin-Etsu Silicone Co., Ltd.) 0.6 part by mass of propyltrimethoxysilane) and "cuazole 2PHZ-PW" as a curing accelerator (trade name, 2-phenyl-4,5-dihydroxymethylimidazole manufactured by Shikoku Kasei Co., Ltd., decomposition temperature 230 ° C.) 0.5 parts by mass was added and stirred and mixed until uniform. Furthermore, this was filtered with a 100 mesh filter and vacuum defoamed to obtain a varnish of an adhesive composition.

Example 1
A mixture of 5 parts by mass of Coronate L (made by Nippon Polyurethane) as polyisocyanate and 3 parts by mass of Esacure KIP 150 (made by Lamberti) as a photopolymerization initiator with respect to 100 parts by mass of the above-mentioned acrylic copolymer The solution was dissolved in ethyl acetate and stirred to prepare a pressure-sensitive adhesive composition.
Next, the pressure-sensitive adhesive composition is coated on a release liner made of a release-treated polyethylene-terephthalate film so that the thickness after drying is 10 μm, and dried at 110 ° C. for 3 minutes, and then the substrate It bonded to a film and produced the adhesive sheet in which the adhesive layer was formed on the base film.

  Next, the above-mentioned adhesive composition is applied to a release liner made of a release-treated polyethylene-terephthalate film so that the thickness after drying is 20 μm, dried at 110 ° C. for 5 minutes, and peeled off. The adhesive film in which the adhesive layer was formed on the liner was produced.

  The pressure-sensitive adhesive sheet was cut into the shape shown in FIG. 3 and the like so that it could be bonded to the ring frame so as to cover the opening. In addition, the adhesive film was cut into the shape shown in FIG. 3 and the like which can cover the back surface of the wafer. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are pasted so that a portion where the adhesive layer 12 is exposed is formed around the adhesive film as shown in FIG. Then, a semiconductor processing tape was manufactured.

<Examples 2 to 8 and Comparative Examples 1 to 6> The semiconductors according to Examples 2 to 8 and Comparative Examples 1 to 6 are the same as in Example 1 except that the base film described in Table 1 is used. A processing tape was produced.

About the adhesive tape of the tape for semiconductor processing concerning an example and a comparative example, it cuts so that it may become length 24 mm (direction which measures deformation), width 5 mm (direction orthogonal to the direction which measures deformation), and samples It was a piece.
Using a thermomechanical property tester (trade name: TMA 8310, manufactured by RIGAKU Co., Ltd.), the obtained sample pieces were measured by the tensile load method under the following measurement conditions to measure the deformation due to temperature in two directions of MD and TD did.
(Measurement condition)
Measurement temperature: -60 to 100 ° C
Heating rate: 5 ° C / min
Measurement load: 19.6mN
Atmosphere gas: nitrogen atmosphere (100 ml / min)
Sampling: 0.5s
Chuck distance: 20 mm

And a thermal deformation rate was computed by following formula (1), the average value of the thermal deformation rate for every 1 degree C between 40 degreeC-80 degreeC of MD direction and TD direction was calculated | required, and the sum was computed. The results are shown in Tables 1 and 2.
Thermal deformation rate TMA (%) = (displacement of sample length / sample length before measurement) x 100 (1)

[Evaluation of chipping]
The wafer was divided into chips for each of the tapes for semiconductor processing of the example and the comparative example by the method described below, and chipping was evaluated.

(A) bonding a surface protection tape to the wafer surface on which the circuit pattern is formed;
(B) irradiating a portion of the wafer to be divided with a laser beam to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding step of grinding the back side of the wafer;
(D) bonding the adhesive layer of the tape for semiconductor processing to the back surface of the wafer while the wafer is heated to 70 to 80 ° C .;
(E) peeling the surface protection tape from the wafer surface;
(F) expanding the tape for semiconductor processing to divide the wafer and the adhesive layer along a dividing line to obtain a plurality of chips with an adhesive film; and (g) the tape for semiconductor processing By removing the slack generated in the expanding step of (f) by heating and shrinking a portion (an annular region between the region in which the tip is present and the ring frame) of the chip and the gap between the chips. Holding the
(H) carrying out the step of picking up the chip with the adhesive layer from the adhesive layer of the tape for semiconductor processing.

  In the step (d), the wafer was bonded to a tape for processing a semiconductor such that the dividing line of the wafer was aligned with the MD direction and the TD direction of the base film.

  In the step (f), the ring ring for dicing bonded to the tape for semiconductor processing is pressed down by the expand ring of DDS 2300 manufactured by Disco Corporation by DDS 2300 manufactured by Disco Corporation, and the wafer bonding site of the tape for semiconductor processing The expansion was carried out by pressing the portion of the outer periphery not overlapping the wafer against the circular push-up member. As the conditions of the step (f), the amount of expansion was adjusted so that the expanding speed was 300 mm / sec and the expanding height was 10 mm. Here, the amount of expansion refers to the amount of change in the relative position of the ring frame and the push-up member before and after the depression. The chip size was made to be 1 × 1 mm square.

In the step (g), after performing expansion again at room temperature under conditions of an expansion speed of 1 mm / sec and an expand height of 10 mm, a heat shrinkage treatment was performed under the following conditions.
[Condition 1]
Heater set temperature: 220 ° C
Hot air volume: 40 L / min
Distance between heater and tape for semiconductor processing: 20 mm
Heater rotation speed: 7 ° / sec
[Condition 2]
Heater set temperature: 220 ° C
Hot air volume: 40 L / min
Distance between heater and tape for semiconductor processing: 20 mm
Heater rotation speed: 5 ° / sec

About the tape for semiconductor processing of Examples 1-8 and Comparative Examples 1-6, pick-up was performed after the said (g) process, and the presence or absence of chip | tip chipping was evaluated. Under the condition (1) and condition 2 of the above-mentioned step (g), when chips to be picked up are lifted, they interfere with adjacent chips and chip chips are not generated as excellent products “◎” and adjacent under condition 1 There is no chipping due to interference with chips, but chips with chipping under condition 2 and having an incidence rate of less than 1% are regarded as good products with "○", chips under interference with adjacent chips under condition 2 The occurrence of chipping is 3% or more due to the interference with the adjacent chip under both condition 1 and condition 2 with "A" as an acceptable product where the occurrence of chipping is 1% or more and less than 3% It evaluated by "x" as inferior goods. The results are shown in Tables 1 and 2.
In the evaluation, as shown in FIG. 8, around the chip 50a on the rightmost end in FIG. 8 without chipping in the MD direction of the adhesive tape, similarly, in FIG. 8 without chipping in the MD direction of the adhesive tape One hundred chips were picked up and evaluated for the periphery of the tip 50b at the end, the periphery of the most tip 51 without chipping in the TD direction of the adhesive tape, and the periphery of the tip 52 located at the center.

  As shown in Table 1, the tapes for semiconductor processing according to Examples 1 to 8 were heats at 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester in the MD direction of the adhesive tape. Because the sum of the average value of deformation rates and the average value of the thermal deformation rates for each 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical characteristics tester in the TD direction is a negative value. Chip chipping at the time of pick-up caused by contact with the chip could be well suppressed.

  On the other hand, as shown in Table 2, in the tape for semiconductor processing according to Comparative Examples 1 to 6, every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical property tester in the MD direction of the adhesive tape. Since the sum of the average value of the thermal deformation rate and the average value of the thermal deformation rate at every 1 ° C. between 40 ° C. and 80 ° C. measured at the time of temperature rise by the thermomechanical testing machine in the TD direction is not a negative value, It was a result inferior to suppression of the chip | tip chipping at the time of the pickup accompanying the contact with an adjacent chip | tip.

10: tape for semiconductor processing 11: base film 12: adhesive layer 13: adhesive layer 22: push-up member 28: heat-shrink area 29: hot air nozzle

Claims (4)

It has an adhesive tape which has a substrate film and an adhesive layer formed on at least one side of the substrate film,
The pressure-sensitive adhesive tape is heated by the thermomechanical characteristic tester in the TD direction and the average value of the thermal deformation rate per 1 ° C between 40 ° C and 80 ° C measured by the thermomechanical characteristic tester in the MD direction. sometimes Ri sum minus value der between the average value of the thermal deformation ratio per 1 ℃ between the measured 40 ° C. to 80 ° C.,
Semiconductor processing tape according to claim Rukoto used in semiconductor processing, including an expanding step of expanding the pressure-sensitive adhesive tape. It has an adhesive tape which has a substrate film and an adhesive layer formed on at least one side of the substrate film,
The base film is made of an ionomer resin or a mixed resin composition of polypropylene and a styrene-butadiene copolymer,
The pressure-sensitive adhesive tape is heated by the thermomechanical characteristic tester in the TD direction and the average value of the thermal deformation rate per 1 ° C between 40 ° C and 80 ° C measured by the thermomechanical characteristic tester in the MD direction. A semiconductor processing tape characterized in that the sum with the average value of the thermal deformation rate per 1 ° C. between 40 ° C. and 80 ° C. measured sometimes is a negative value.   The adhesive tape is laminated | stacked on the said adhesive layer side, The tape for semiconductor processing of Claim 1 or Claim 2 characterized by the above-mentioned.   The tape for semiconductor processing according to any one of claims 1 to 3, which is used for full-cut and half-cut blade dicing, laser dicing, or stealth dicing using a laser.