JP6670177B2 - Die bond film, dicing die bond film, and method of manufacturing semiconductor device - Google Patents

Description

  The present invention relates to a die bond film, a dicing die bond film, and a method for manufacturing a semiconductor device.

  Conventionally, a die bond film is used for manufacturing a semiconductor device.

  In a semiconductor device manufacturing process using a die bond film, there is a method of stacking (stacking) chips in multiple stages. In such a case, there is a demand for a thinner chip. (For example, see Patent Document 1).

JP 2008-218571 A

  However, when a wafer on which a passivation film such as polyimide is formed is thinly ground, the wafer is largely warped, and the chip after dicing is warped. When the warped chip is bonded to a substrate, a lead frame, or the like and stacked, the warp remains, and there is a problem that the end of the chip floats.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a die bond film capable of suppressing warpage of an extremely thin chip having a large warp and capable of favorably performing multi-stage lamination.
Another object of the present invention is to provide a dicing die bond film including the die bond film.
Another object of the present invention is to provide a method for manufacturing a semiconductor device using the dicing die bond film.

  The present inventors have found that the above-described problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the die bond film according to the present invention,
A filler having an average particle size in a range of 5 nm to 100 nm,
A thermoplastic resin,
Containing phenolic resin,
A tensile storage modulus at 150 ° C. before thermosetting is greater than 0.3 MPa and 30 MPa or less.

According to the above configuration, since the tensile storage modulus at 150 ° C. before thermosetting is 0.3 MPa or more, even if the chip is warped, the warpage can be suppressed after die bonding.
Further, since the tensile storage modulus at 150 ° C. before the heat curing is 30 MPa or less, the embedding property into the adherend is improved, and the void between the adherend and the die bond film can be suppressed.
Further, since a filler having an average particle diameter in the range of 5 nm to 100 nm is used as the filler, the die bond film can be made thin. Also, since it contains a phenol resin, it has excellent reliability. Further, since the film contains a thermoplastic resin, the shape as a film can be maintained.

In the above configuration, when the glass transition temperature before thermal curing is T ₀ and the glass transition temperature after thermal curing is T ₁ , it is preferable that the following formula 1 is satisfied.
Equation 1 T ₀ <T ₁ <T ₀ +20

  When the above formula 1 is satisfied, it can be said that the difference between the glass transition temperature before the thermosetting and the glass transition temperature after the thermosetting is small, and the change in physical properties before and after the thermosetting is small. Therefore, the embedding property into the adherend is improved even after the heat history is applied.

  In the above configuration, the filler is preferably a silica filler.

  When the filler is a silica filler, the cost is lower than other inorganic fillers, and the filler is easily available.

  In the above configuration, it is preferable that the thermoplastic resin is an acrylic polymer having an epoxy group.

  When the thermoplastic resin is an acrylic polymer having an epoxy group, when the adherend is an organic substrate, reliability can be improved by reacting with an unreacted epoxy resin or phenol resin present in the organic substrate. . Further, it can be reacted with the sealing resin, and the reliability can be improved.

  In the above configuration, it is preferable that a coloring agent is included.

  Since the die bond film having the above-described configuration uses a filler having an average particle diameter in the range of 5 nm to 100 nm, the die bond film may have transparency and visibility may be reduced. However, when the coloring agent is included, the visibility of the die bond film can be improved, and the workability can be improved.

  In the above configuration, the colorant is preferably a dye.

  When the coloring agent is a dye, the coloring agent is easily dissolved in the resin constituting the die bond film and can be uniformly colored. In addition, when a solvent is used when producing a die bond film, it is easily dissolved in the solvent and can be uniformly colored.

In the above configuration, when the average particle size of the filler is R and the thickness of the die bond film is T, it is preferable that the following formula 2 is satisfied.
Equation 2 10 <T / R

  When the above expression 2 is satisfied, the protrusion of the filler from the die bond film can be suppressed. As a result, it is possible to prevent the wafer from breaking when the die bond film is attached to the wafer.

Further, the dicing die bond film according to the present invention,
Dicing sheet,
And the die bond film.

  The dicing die bond film includes the die bond film. Since the tensile storage elastic modulus at 150 ° C. before the thermosetting of the die bond film is 0.3 MPa or more, even if the chip is warped, the warp can be suppressed after die bonding. Further, since the tensile storage modulus at 150 ° C. before the heat curing is 30 MPa or less, the embedding property into the adherend is improved, and the void between the adherend and the die bond film can be suppressed.

Further, the method for manufacturing a semiconductor device according to the present invention includes
A step A of attaching a semiconductor wafer to a dicing die bond film;
Expanding the dicing die-bonding film, breaking at least the die-bonding film, and a step B of obtaining a chip with a die-bonding film,
A step C of picking up the chip with a die bond film;
A step D of die-bonding the picked-up chip with a die bond film to an adherend via a die bond film;
A step E of performing wire bonding on the chip with a die-bonding film,
The dicing die bond film,
A filler having an average particle size in a range of 5 nm to 100 nm,
A thermoplastic resin,
Containing phenolic resin,
A tensile storage modulus at 150 ° C. before thermosetting is greater than 0.3 MPa and 30 MPa or less.

  The dicing die bond film includes the die bond film. Since the tensile storage elastic modulus at 150 ° C. before the thermosetting of the die bond film is 0.3 MPa or more, even if the chip is warped, the warp can be suppressed after die bonding. Further, since the tensile storage modulus at 150 ° C. before the heat curing is 30 MPa or less, the embedding property into the adherend is improved, and the void between the adherend and the die bond film can be suppressed.

1 is a schematic cross-sectional view illustrating a dicing die bond film according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the semiconductor device according to the embodiment. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the semiconductor device according to the embodiment. (A), (b) is a schematic cross-sectional view for explaining the method of manufacturing a semiconductor device according to the present embodiment. FIG. 5 is a schematic cross-sectional view for explaining the method for manufacturing the semiconductor device according to the embodiment. FIG. 9 is a schematic cross-sectional view showing another example of the semiconductor device according to the embodiment. (A) And (b) is a cross section for explaining another manufacturing method of the semiconductor device concerning this embodiment. FIG. 11 is a schematic cross-sectional view for explaining another method for manufacturing the semiconductor device according to the embodiment.

  The die bond film and the dicing die bond film according to the present embodiment will be described below. The die bond film according to the present embodiment includes a dicing die bond film described below in a state where a dicing sheet is not bonded. Therefore, the dicing die bond film will be described below, and the die bond film will be described therein.

(Dicing die bond film)
The dicing die bond film according to one embodiment of the present invention will be described below. FIG. 1 is a schematic cross-sectional view showing a dicing die bond film according to one embodiment of the present invention.

  As shown in FIG. 1, the dicing die-bonding film 10 has a configuration in which a die-bonding film 3 is laminated on a dicing sheet 11. The dicing sheet 11 has a configuration in which the pressure-sensitive adhesive layer 2 is laminated on the base material 1. The die bond film 3 is provided on the pressure-sensitive adhesive layer 2.

  In the present embodiment, a case will be described in which the dicing sheet 11 has a portion 2b that is not covered by the die bond film 3, but the dicing die bond film according to the present invention is not limited to this example, and the dicing sheet is not limited to this example. A die bond film may be laminated on the dicing sheet so as to cover the whole.

(Die bond film)
The die bond film 3 has a tensile storage modulus at 150 ° C. before heat curing of more than 0.3 MPa and 30 MPa or less, preferably in the range of 0.4 MPa to 25 MPa, more preferably in the range of 0.5 MPa to 20 MPa. preferable.
Since the tensile storage modulus at 150 ° C. before heat curing is 0.3 MPa or more, even if the chip is warped, the warpage can be suppressed after die bonding. . Further, since the tensile storage modulus at 150 ° C. before the heat curing is 30 MPa or less, the embedding property into the adherend is improved, and the void between the adherend and the die bond film can be suppressed.
As described above, according to the die-bonding film 3, it is possible to achieve both active warpage suppression and void embedding.
In addition, the die bond film 3 preferably has a tensile storage modulus at 175 ° C. before thermosetting in the range of 0.2 MPa to 30 MPa, more preferably in the range of 0.3 MPa to 25 MPa. The temperature of the sealing step is usually about 175 ° C. Therefore, when the tensile storage elastic modulus at 175 ° C. before the heat curing is 30 MPa or less, the embedding property under the sealing pressure becomes good, and the void can be suppressed.
The tensile storage elastic modulus at 150 ° C. and 175 ° C. before the thermosetting of the die bond film 3 is calculated by, for example, using a filler described below or adjusting the molecular weight of the thermoplastic resin. It can be in the range.
A more detailed method for measuring the tensile storage modulus is according to the method described in Examples.

Die-bonding film 3, the glass transition temperature before the heat curing (Tg) T _0, when the glass transition temperature after thermal curing (Tg) was T _1, it is preferable to satisfy the following formula 1.
Equation 1 T ₀ <T ₁ <T ₀ +20

When the above formula 1 is satisfied, it can be said that the difference between the glass transition temperature before the thermosetting and the glass transition temperature after the thermosetting is small, and the change in physical properties before and after the thermosetting is small. Therefore, the embedding property into the adherend is improved even after the heat history is applied. The above T ₁ is more preferably smaller than (T ₀ +15), and still more preferably smaller than (T ₀ +10).
In order that the die bond film 3 satisfies the above formula 1, for example, it may be adjusted so as to reduce the crosslinking of the cured product.
In the present specification, “after heat curing” refers to a state after heating at 175 ° C. for 1 hour.

The glass transition temperature T ₀ of the die bond film 3 before the thermosetting is preferably in the range of 0 to 70 ° C., and more preferably in the range of 15 to 50 ° C. When the glass transition temperature T ₀ is 0 ° C. or higher, the tackiness of the die bond film 3 can be suppressed. Further, when the temperature is 70 ° C. or lower, it is possible to easily stick to an adherend.

Glass transition temperatures _{T 1} after thermal curing of the die-bonding film 3 is preferably in the range of 0 to 90 ° C., and more preferably in the range of 15 to 70 ° C.. Wherein the glass transition temperature T ₁ is within the above numerical value can be easily satisfied the formula 1. As a result, the embedding property into the adherend is improved even after the thermosetting.

The glass transition temperature T ₀ and the glass transition temperature T ₁ can be set within desired ranges by selecting a resin component constituting the die bond film 3.

  A more detailed method for measuring the glass transition temperature (Tg) is based on the method described in Examples.

The die-bonding film 3 preferably has an elongation at break at −15 ° C. in a state before thermosetting of not more than 20%, more preferably not more than 15%, further preferably not more than 10%. In a process of manufacturing a semiconductor device, stealth dicing (registered trademark) or a DBG process may be used. When the breaking elongation is 20% or less, the cool expandability after the stealth dicing or DBG step is improved. The stealth dicing and DBG processes will be described later.
The breaking elongation can be controlled by a material constituting the die bond film 3. For example, it can be controlled by appropriately selecting the type and content of the thermoplastic resin constituting the die bond film 3 and the content of the filler.
The method for measuring the elongation at break is according to the method described in Examples.

As shown in FIG. 1, the layer structure of the die bond film 3 includes a single-layer adhesive layer. Note that, in this specification, a single layer refers to a layer having the same composition and includes a plurality of layers having the same composition stacked.
However, the die bond film in the present invention is not limited to this example. For example, it may have a multilayer structure in which two or more types of adhesive layers having different compositions are laminated.

  The die bond film 3 contains a filler having an average particle size in a range of 5 nm to 100 nm, a thermoplastic resin, and a phenol resin.

The filler has an average particle size in a range of 5 nm to 100 nm, preferably in a range of 7 nm to 80 nm, and more preferably in a range of 10 nm to 50 nm. Since the filler having an average particle diameter in the range of 5 nm to 100 nm is used, the die bond film 3 can be made thin. In addition, since a filler having an average particle size in the range of 5 nm to 100 nm is used, the tensile storage modulus of the die bond film 3 can be increased.
The method for measuring the average particle size of the filler is based on the method described in Examples.

  Usually, the maximum particle size of the filler needs to be less than the thickness of the die bond film 3. This is because the filler protrudes from the die bond film, and the wafer is broken when the die bond film is bonded to the wafer. Since the average particle diameter of the filler contained in the die bond film 3 is in the range of 5 nm to 100 nm, the probability that a coarse filler (a filler having a diameter larger than the thickness of the die bond film 3) is extremely low. Therefore, for example, the thickness of the die bond film 3 can be 5 μm or less.

Examples of the filler include an inorganic filler and an organic filler, and an inorganic filler is preferable from the viewpoint of a low linear expansion coefficient. The inorganic filler is not particularly limited, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. Among them, crystalline silica and amorphous silica are preferable from the viewpoint of availability and cost.

When the average particle size of the filler is R and the thickness of the die bond film 3 is T, it is preferable that the following formula 2 is satisfied.
Equation 2 10 <T / R

  When the above expression 2 is satisfied, the protrusion of the filler from the die bond film 3 can be suppressed. As a result, it is possible to prevent the wafer from breaking when the die bond film 3 is bonded to the wafer. The T / R is more preferably 15 or more, and further preferably 20 or more.

  The thickness (T) of the die bond film 3 is preferably 1 to 30 μm, and more preferably 3 to 20 μm. When the thickness is 30 μm or less, the die bond film is easily cleaved in the cool expanding step.

The compounding ratio of the filler is preferably from 10 to 70% by weight, more preferably from 20 to 60% by weight, based on the entire die bond film 3.
When the compounding ratio of the filler is in the range of 10 to 70% by weight, the elastic modulus and the cleavability are improved.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic ester copolymer, polybutadiene resin, polycarbonate resin, and thermosetting resin. Examples include a plastic polyimide resin, a polyamide resin such as 6-nylon or 6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyester resin such as PET or PBT, a polyamideimide resin, or a fluororesin. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, an acrylic resin which contains few ionic impurities, has high heat resistance, and can ensure the reliability of the semiconductor element is particularly preferable. Since the die bond film 3 contains a thermoplastic resin, the shape as a film can be maintained.

  The acrylic resin is not particularly limited, and may be one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly having 4 to 18 carbon atoms. A polymer (acrylic copolymer) or the like as a component is exemplified. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  Further, other monomers forming the polymer are not particularly limited, for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid and the like Monomer containing a carboxyl group, acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylate Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as acrylate, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include a sulfonic acid group-containing monomer such as acryloyloxynaphthalenesulfonic acid and a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate.

  Among them, the thermoplastic resin is preferably an acrylic polymer having an epoxy group as a functional group. When the thermoplastic resin is an acrylic polymer having an epoxy group, when the adherend is an organic substrate, reliability can be improved by reacting with an unreacted epoxy resin or phenol resin present in the organic substrate. . Further, it can be reacted with the sealing resin, and the reliability can be improved.

  The mixing ratio of the thermoplastic resin is preferably in the range of 10 to 90% by weight, and more preferably 15 to 60% by weight, based on the entire die bond film 3 from the viewpoint of improving the elastic modulus at a high temperature before curing. More preferably, it is within the range.

The weight average molecular weight of the thermoplastic resin is preferably from 500,000 to 1700,000, and more preferably from 600,000 to 1500,000. When the molecular weight of the thermoplastic resin in the die bond film 3 is 500,000 or more, the cohesive force between polymer chains increases. As a result, it becomes difficult to elongate, and the cleavability at the time of cool expansion is improved. On the other hand, when the molecular weight is 1700,000 or less, the synthesis of the polymer is easy.
In the present specification, the weight average molecular weight refers to a value measured by the following method.
<Measurement of weight average molecular weight Mw>
The measurement of the weight average molecular weight Mw is performed by GPC (gel permeation chromatography). The measurement conditions are as follows. Incidentally, the weight average molecular weight is calculated in terms of polystyrene.
Measuring device: HLC-8120GPC (product name, manufactured by Tosoh Corporation)
Column: TSKgel GMH-H (S) x 2 (product number, manufactured by Tosoh Corporation)
Flow rate: 0.5 ml / min
Injection volume: 100 μl
Column temperature: 40 ° C
Eluent: THF
Injected sample concentration: 0.1% by weight
Detector: Differential refractometer

  Examples of the phenol resin include a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a novolac phenol resin such as a nonylphenol novolak resin, a resol phenol resin, and a polyoxystyrene such as polyparaoxystyrene. No. These can be used alone or in combination of two or more. Of these phenolic resins, phenol novolak resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved. Excellent reliability because it contains phenolic resin.

  From the viewpoint of reliability, the blending ratio of the phenol resin is preferably in the range of 1 to 35% by weight, more preferably 3 to 20% by weight, based on the entire die bond film 3. . When it is within the above numerical range, the reaction with other components proceeds sufficiently, so that the reliability can be improved.

  The die bond film 3 preferably contains a coloring agent. Since the die bond film 3 uses a filler having an average particle size in the range of 5 nm to 100 nm, the die bond film 3 may have transparency and visibility may be reduced. Therefore, if the coloring agent is included, the visibility of the die bond film 3 can be improved, and the workability can be improved.

  Examples of the coloring agent include pigments and dyes. The colorants can be used alone or in combination of two or more. As the dye, any form of dye such as an acid dye, a reactive dye, a direct dye, a disperse dye, and a cationic dye can be used. In addition, the form of the pigment is not particularly limited, and can be appropriately selected from known pigments. Of these, dyes are preferred. When a dye is used, it can be easily dissolved in the resin constituting the die bond film 3 and can be uniformly colored. When a solvent is used when producing the die bond film 3, it is easily dissolved in the solvent and can be uniformly colored. From the viewpoint that it is not necessary to disperse the dye, a dye having excellent solubility is preferable.

  When the die-bonding film 3 of the present invention is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer can be added as a crosslinking agent during the production. Thereby, the adhesive properties at high temperatures can be improved, and the heat resistance can be improved.

  As the cross-linking agent, a conventionally known one can be employed. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate are more preferred. The amount of the crosslinking agent to be added is generally preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. If the amount of the cross-linking agent is more than 7 parts by weight, the adhesive strength is undesirably reduced. On the other hand, if the amount is less than 0.05 part by weight, the cohesive force becomes insufficient, which is not preferable. In addition, other polyfunctional compounds such as an epoxy resin may be included together with such a polyisocyanate compound, if necessary.

In addition, other additives can be appropriately blended into the die bond film 3 as needed. Examples of other additives include a flame retardant, a silane coupling agent, an ion trapping agent, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.
From the viewpoint of improving reliability, the die bond film 3 may contain an epoxy resin in a small amount. However, since the epoxy resin has a low molecular weight, if the die bond film 3 contains a large amount of the epoxy resin, the elastic modulus before the thermosetting is reduced. In addition, since the amount of the hardening component increases, the embedding property after the heat hardening decreases. Therefore, the die bond film 3 preferably does not contain an epoxy resin.

(Dicing sheet)
The dicing sheet 11 according to the present embodiment has a configuration in which the pressure-sensitive adhesive layer 2 is laminated on the base material 1. However, the dicing sheet according to the present invention is not limited to this example as long as the die bond film 3 can be fixed when the die bond film 3 is broken into individual pieces in the cool expanding step. For example, another layer may be present between the substrate and the pressure-sensitive adhesive layer.

(Base material)
The substrate 1 preferably has ultraviolet transmittance, and serves as a strength matrix of the dicing die bond film 10. For example, low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polyolefins such as polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Examples of the material of the substrate 1 include polymers such as a crosslinked body of the resin. The plastic film may be used without stretching, or may be subjected to uniaxial or biaxial stretching if necessary. According to the resin sheet imparted with heat shrinkage by a stretching process or the like, the semiconductor chips 5 with the die bond film 3 are formed by heat shrinking (heat expanding) the outer peripheral portion of the semiconductor wafer of the base material 1 after the cool expansion. , The recovery of the semiconductor chip 5 can be facilitated.

  The surface of the base material 1 is formed by a conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high-piezoelectric exposure, ionizing radiation treatment, etc., in order to enhance the adhesion and retention of the adjacent layer. Alternatively, physical treatment and coating treatment with a primer (for example, an adhesive substance described later) can be performed. As the base material 1, the same type or different types can be appropriately selected and used, and if necessary, a blend of several types can be used. Further, in order to provide the substrate 1 with an antistatic property, a vapor-deposited layer made of a metal, an alloy, an oxide thereof, or the like and having a thickness of about 30 to 500 ° is provided on the substrate 1. it can. The substrate 1 may be a single layer or two or more layers.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

(Adhesive layer)
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleaning and cleaning properties of an electronic component that prevents contamination of a semiconductor wafer, glass, and the like with an organic solvent such as ultrapure water or alcohol. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , An octadecyl ester, an eicosyl ester and the like alkyl group having 1 to 30 carbon atoms, especially a linear or branched alkyl ester having 4 to 18 carbon atoms) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) in the present invention has the same meaning.

  The acrylic polymer contains a unit corresponding to another monomer component copolymerizable with the alkyl (meth) acrylate or the cycloalkyl ester, if necessary, for the purpose of improving the cohesive strength, heat resistance, and the like. You may go out. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid; and maleic anhydride. , Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as sulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid. Monomer; Phosphoric acid group-containing monomer such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or two or more of these copolymerizable monomer components can be used. The use amount of these copolymerizable monomers is preferably 40% by weight or less of all monomer components.

  In addition, the acrylic polymer may include a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking. Such polyfunctional monomers include, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Acrylate and the like. One or more of these polyfunctional monomers can be used. The amount of the polyfunctional monomer to be used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer is obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend and the like, the content of the low-molecular-weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, and more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately used as the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer. As a specific means of the external cross-linking method, a method of adding a so-called cross-linking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based cross-linking agent to cause a reaction is used. When an external cross-linking agent is used, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. Further, as necessary, in addition to the above-mentioned components, additives such as conventionally known various tackifiers and antioxidants may be used for the pressure-sensitive adhesive.

The pressure-sensitive adhesive layer 2 may be formed of a radiation-curable pressure-sensitive adhesive. When an ultraviolet ray is irradiated in a state where the die bond film 3 is bonded, an anchor effect can be generated between the die bond film 3 and the die bond film 3. Thereby, the adhesiveness between the pressure-sensitive adhesive layer 2 and the die bond film 3 at a low temperature (for example, -15 ° C.) can be improved.
Note that the lower the temperature, the higher the adhesion due to the anchor effect. Even at room temperature (for example, 23 ° C.), there is an anchor effect, but at room temperature, adhesion by the anchor effect is not exhibited as compared with low temperature.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the radiation-curable pressure-sensitive adhesive include, for example, an addition-type radiation-curable pressure-sensitive adhesive in which a radiation-curable monomer component or an oligomer component is blended with a general pressure-sensitive pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Agents can be exemplified.

  Examples of the radiation-curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples thereof include stall tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. The radiation-curable oligomer component includes various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene-based oligomers, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, so as to reduce the adhesive force of the pressure-sensitive adhesive layer. Generally, the amount is, for example, 5 to 500 parts by weight, and preferably about 40 to 150 parts by weight, based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.

  In addition, as the radiation-curable pressure-sensitive adhesive, in addition to the additive-type radiation-curable pressure-sensitive adhesive described above, a base polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the end of the main chain. And an internal radiation-curable pressure-sensitive adhesive. The intrinsic radiation-curable pressure-sensitive adhesive does not need to contain, or does not contain many, low molecular components such as oligomer components, so that the oligomer components and the like do not move in the pressure-sensitive adhesive over time and are stable. This is preferable because a pressure-sensitive adhesive layer having a laminated layer structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having tackiness can be used without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method of introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to introduce a carbon-carbon double bond into a polymer side chain in terms of molecular design. It is. For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable compound having a carbon-carbon double bond. And a method of performing a condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, and hydroxyl groups and isocyanate groups. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracing of the reaction. In addition, as long as the combination of these functional groups produces an acrylic polymer having the carbon-carbon double bond, the functional group may be on either side of the acrylic polymer and the compound. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate. In addition, as the acrylic polymer, those obtained by copolymerizing the above-described hydroxy group-containing monomer, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like are used.

  The intrinsic radiation-curable pressure-sensitive adhesive can use the base polymer (particularly an acrylic polymer) having the carbon-carbon double bond alone, but the radiation-curable monomer can be used without deteriorating the properties. Components and oligomer components can also be blended. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.

  When the radiation-curable pressure-sensitive adhesive is cured by ultraviolet light or the like, a photopolymerization initiator is contained. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, and 2-methyl-2-hydroxypropion. Α-Ketol compounds such as phenone and 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as benzophenone, benzoylbenzoic acid, and 3,3′-dimethyl; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, Thioxanthone compounds such as 2,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketones; acylphosphinoxides; acylphosphonates. The compounding amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  Examples of the radiation-curable pressure-sensitive adhesive include, for example, photopolymerizable compounds such as addition-polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group, which are disclosed in JP-A-60-196965. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and a photopolymerization initiator such as an onium salt-based compound.

  Although the thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably, from the viewpoint of preventing chipping of the chip cut surface and compatibility with fixing and holding the die bond film 3. Is 5 to 25 μm.

  The die bond film 3 of the dicing die bond film 10 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film 3 until it is put to practical use. Further, the separator can be further used as a support base material when transferring the die bond film 3 to the pressure-sensitive adhesive layer 2. The separator is peeled off when the work is attached to the die bond film 3 of the dicing die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based release agent, or a long-chain alkyl acrylate-based release agent can also be used.

The dicing die bond film 10 according to the present embodiment is manufactured, for example, as follows.
First, the substrate 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after applying the pressure-sensitive adhesive composition solution on the base material 1 to form a coating film, the coating film is dried under predetermined conditions (by heat crosslinking if necessary) to form a precursor layer. . The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes. Alternatively, the precursor layer may be formed by applying the pressure-sensitive adhesive composition on the separator to form a coating film, and then drying the coating film under the drying conditions. Thereafter, the precursor layer is bonded on the base material 1 together with the separator. Thereby, a dicing sheet precursor is produced.

The die bond film 3 is produced, for example, as follows.
First, an adhesive composition solution as a material for forming the die bond film 3 is prepared. As described above, the adhesive composition solution contains the adhesive composition, filler, and other various additives.

  Next, the adhesive composition solution is applied onto the base separator to have a predetermined thickness to form a coating film, and the coating film is dried under predetermined conditions to form the die bond film 3. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are, for example, a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes. Alternatively, the die-bonding film 3 may be formed by applying a pressure-sensitive adhesive composition solution on the separator to form a coating film, and then drying the coating film under the drying conditions. After that, the die bond film 3 is attached to the base separator together with the separator.

  Subsequently, the separator is peeled off from the dicing sheet precursor and the die bond film 3, respectively, and the two are bonded together such that the die bond film 3 and the pressure-sensitive adhesive layer become bonding surfaces. The bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and for example, is preferably 30 to 50 ° C, and more preferably 35 to 45 ° C. The linear pressure is not particularly limited, and for example, is preferably 0.1 to 20 kgf / cm, and more preferably 1 to 10 kgf / cm. After that, ultraviolet rays may be irradiated from the substrate 1 side. The irradiation amount of the ultraviolet rays is preferably an amount that makes the peeling force A and the peeling force B fall within the above numerical ranges. The specific amount of ultraviolet irradiation varies depending on the composition and thickness of the pressure-sensitive adhesive layer, but is preferably, for example, 50 mJ to 500 mJ, and more preferably 100 mJ to 300 mJ. As described above, the dicing die bond film according to the present embodiment is obtained.

(Method of Manufacturing Semiconductor Device)
Next, a method for manufacturing a semiconductor device using the dicing die-bonding film 10 will be described with reference to FIGS.

The method for manufacturing a semiconductor device according to the present embodiment includes:
A step A of attaching a semiconductor wafer to a dicing die bond film;
Expanding the dicing die-bonding film, breaking at least the die-bonding film, and a step B of obtaining a chip with a die-bonding film,
A step C of picking up the chip with a die bond film;
A step D of die-bonding the picked-up chip with a die bond film to an adherend via a die bond film;
And at least a step E of performing wire bonding on the chip with a die bond film,
The dicing die bond film,
A filler having an average particle size in a range of 5 nm to 100 nm,
A thermoplastic resin,
Containing phenolic resin,
The tensile storage modulus at 150 ° C. before thermosetting is greater than 0.3 MPa and 30 MPa or less.

  Hereinafter, first, a case in which the dicing die-bonding film is expanded to simultaneously break the die-bonding film and the semiconductor wafer after the formation of the modified region to obtain a chip with a die-bonding film (stealth dicing) will be described.

2 to 5 are schematic cross-sectional views illustrating a method for manufacturing the semiconductor device according to the present embodiment.
First, a modified region is formed on the planned dividing line 4L by irradiating the planned dividing line 4L of the semiconductor wafer 4 with a laser beam (see FIG. 2). This method is a method of aligning a condensing point inside a semiconductor wafer, irradiating a laser beam along a grid-shaped scheduled dividing line, and forming a modified region inside the semiconductor wafer by ablation by multiphoton absorption. . Laser irradiation conditions may be appropriately adjusted within the following conditions.
<Laser irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens
Magnification 100 times or less
NA 0.55
Transmittance for laser light wavelength 100% or less (C) Moving speed of the mounting table on which the semiconductor substrate is mounted 280 mm / sec or less In addition, the method of irradiating laser light to form a modified region on the planned dividing line 4L Are described in detail in Japanese Patent No. 3408805 and Japanese Patent Application Laid-Open No. 2003-338567, and the detailed description thereof will be omitted.

  Next, as shown in FIG. 3, the semiconductor wafer 4 after the formation of the modified region is pressure-bonded onto the die-bonding film 3, and the semiconductor wafer 4 is bonded and fixed (fixing step). This step corresponds to step A of the present invention. This step is performed while pressing with a pressing means such as a pressure roll. The bonding temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80 ° C. This is because the warpage of the semiconductor wafer 4 can be effectively prevented, and the influence of expansion and contraction of the dicing die bond film can be reduced.

  Next, by applying a tensile tension to the dicing die-bonding film 10, the semiconductor wafer 4 and the die-bonding film 3 are broken at the planned dividing line 4L to form the semiconductor chip 5 (cool expanding step). This step corresponds to Step B of the present invention. In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 4A, a dicing ring 31 is attached to the periphery of the adhesive layer 2 of the dicing die-bonding film 10 to which the semiconductor wafer 4 is attached, and then fixed to the wafer expanding device 32. I do. Next, as shown in FIG. 4B, the push-up portion 33 is raised to apply tension to the dicing die-bonding film 12.

  The cool expanding step is preferably performed under a condition of 0 to -15 ° C, and more preferably under a condition of -5 to -15 ° C. Since the cool expanding step is performed under the condition of 0 to −15 ° C., the die bond film 3 can be suitably broken.

  In the cool expanding step, the expanding speed (the speed at which the push-up portion rises) is preferably 100 to 400 mm / sec, more preferably 100 to 350 mm / sec, and 100 to 300 mm / sec. Is more preferred. When the expanding speed is set to 100 mm / sec or more, the semiconductor wafer 4 and the die bond film 3 can be easily and substantially simultaneously broken. If the expanding speed is 400 mm / sec or less, the dicing sheet 11 can be prevented from breaking.

  In the cool expanding step, the expanded amount is preferably 4 to 16 mm. The expansion amount can be appropriately adjusted within the above numerical range according to the chip size to be formed. When the expanded amount is 4 mm or more, breakage of the semiconductor wafer 4 and the die bond film 3 can be made easier. If the expanded amount is 16 mm or less, the dicing sheet 11 can be further prevented from breaking.

  As described above, by applying a tensile force to the dicing die-bonding film 10, cracks are generated in the thickness direction of the semiconductor wafer 4 starting from the modified region of the semiconductor wafer 4, and the die-bonding film 3 in close contact with the semiconductor wafer 4 is formed. The semiconductor chip 5 having the die bond film 3 can be obtained.

Next, a heat expanding step is performed as necessary. In the heat expanding step, the outer side of the portion of the dicing sheet 11 to which the semiconductor wafer 4 is attached is heated and contracted. Thereby, the interval between the semiconductor chips 5 is increased. The conditions in the heat expanding step are not particularly limited, but it is preferable that the expanding amount is 4 to 16 mm, the heat temperature is 200 to 260 ° C., the heat distance is 2 to 30 mm, and the rotation speed is 3 ° / sec to 10 ° / sec. .
Note that the heat expanding step is not limited to this example. For example, the heat expanding step may be a step including the following steps (1) to (3).
(1) After the cool expanding step, first, the dicing sheet 11 is expanded by a heat stage. Thereby, the sagging of the dicing sheet 11 is removed, and the interval between the semiconductor chips 5 is increased.
(2) Next, the portion of the dicing sheet 11 to which the semiconductor wafer 4 is adhered is attracted to the heat stage, so that the state where the chip interval is widened can be maintained.
(3) Thereafter, the outside of the portion of the dicing sheet 11 to which the semiconductor wafer 4 is attached is heated and thermally contracted (heat shrink).

  Next, a cleaning step is performed as necessary. In the cleaning step, the dicing sheet 11 to which the semiconductor chip 5 with the die bond film 3 is fixed is set on a spin coater. Next, the spin coater is rotated while the cleaning liquid is dropped on the semiconductor chip 5. Thus, the surface of the semiconductor chip 5 is cleaned. Examples of the cleaning liquid include water. The rotation speed and rotation time of the spin coater vary depending on the type of the cleaning liquid and the like, but may be, for example, 400 to 3000 rpm and 1 to 5 minutes.

  Next, the semiconductor chip 5 is picked up to separate the semiconductor chip 5 bonded and fixed to the dicing die bond film 10 (pickup step). This step corresponds to Step C of the present invention. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method in which each semiconductor chip 5 is pushed up from the dicing die bond film 10 side by a needle, and the pushed up semiconductor chip 5 is picked up by a pickup device.

  Next, as shown in FIG. 5, the picked-up semiconductor chip 5 is die-bonded to the adherend 6 via the die-bonding film 3 (temporary fixing step). This step corresponds to Step D of the present invention. Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or a non-deformable adherend that is difficult to deform (a semiconductor wafer or the like).

  As the substrate, a conventionally known substrate can be used. In addition, as the lead frame, a metal lead frame such as a Cu lead frame and a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by bonding and fixing a semiconductor element and electrically connecting the semiconductor element.

  The shear adhesive force at 25 ° C. during temporary fixing of the die bond film 3 is preferably 0.2 MPa or more to the adherend 6, more preferably 0.2 to 10 MPa. If the shear bonding force of the die bond film 3 is at least 0.2 MPa or more, the ultrasonic bonding or heating in the wire bonding step causes the die bond film 3 and the semiconductor chip 5 or the adherend 6 to be bonded to each other. There is little occurrence of shear deformation on the bonding surface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from being reduced. Further, the shear adhesive force at 175 ° C. when the die bond film 3 is temporarily fixed is preferably 0.01 MPa or more to the adherend 6, and more preferably 0.01 to 5 MPa.

  Next, wire bonding for electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 to an electrode pad (not shown) on the semiconductor chip 5 with a bonding wire 7 is performed (wire bonding step). This step corresponds to Step E of the present invention. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at the time of performing wire bonding is in the range of 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is from several seconds to several minutes. The connection is performed by using vibration energy by ultrasonic waves and pressure bonding energy by application and pressurization in a state of being heated to be within the above-mentioned temperature range. This step is performed without performing thermosetting of the die bond film 3. Further, the semiconductor chip 5 and the adherend 6 are not fixed by the die bond film 3 in the process of this step.

  Next, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wires 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is usually 175 ° C. for 60 to 90 seconds, but the present invention is not limited to this. For example, curing can be performed at 165 to 185 ° C. for several minutes. Thus, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed via the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the fixing by the die bond film 3 is possible in this step, so that the number of manufacturing steps is reduced and the manufacturing time of the semiconductor device is reduced. Can be reduced. Note that the sealing step is not limited to this example, and is a step of embedding the semiconductor chip 5 in the sealing sheet by using a sheet-shaped sealing resin (sealing sheet), for example, by a parallel plate press. You may.

  In the post-curing step, the insufficiently cured sealing resin 8 is completely cured in the sealing step. Even when the die bonding film 3 is not completely thermally cured in the sealing step, the die bonding film 3 can be completely thermally cured together with the sealing resin 8 in this step. The heating temperature in this step depends on the type of the sealing resin, but is, for example, in the range of 165 to 185 ° C., and the heating time is about 0.5 to 8 hours.

In addition, the dicing die bond film of the present invention can be suitably used also when three-dimensional mounting is performed by stacking a plurality of semiconductor chips. At this time, the die-bonding film and the spacer may be laminated between the semiconductor chips, or the die-bonding film alone may be laminated between the semiconductor chips without laminating the spacer, and may be appropriately changed according to manufacturing conditions, applications, and the like. It is possible.
Hereinafter, a semiconductor device in which a plurality of semiconductor chips are stacked will be briefly described. FIG. 6 is a schematic sectional view showing another example of the semiconductor device according to the present embodiment. In the semiconductor device shown in FIG. 6, the semiconductor chip 5 is stacked on the adherend 6 via the die bond film 3, and further, the semiconductor chip 15 is stacked on the semiconductor chip 5 via the die bond film 13. The semiconductor chip 15 is smaller than the semiconductor chip 5 in plan view. The electrode pads (not shown) formed on the upper surface of the semiconductor chip 5 are exposed from the semiconductor chip 15 in plan view. The electrode pads formed on the upper surface of the semiconductor chip 5 and the terminal portions (not shown) of the adherend 6 are electrically connected by bonding wires 7. Further, an electrode pad (not shown) formed on the upper surface of the semiconductor chip 15 and a terminal portion (not shown) of the adherend 6 are electrically connected by a bonding wire 7. The semiconductor chip 5 and the semiconductor chip 15 are sealed with the sealing resin 8. The die bond film 13 may have the same composition as the die bond film 3 or may have a different composition from the die bond film 3 within the range described in the section of the die bond film.
The example of the semiconductor device in which the plurality of semiconductor chips are stacked has been described above.

  Next, a method of manufacturing a semiconductor device employing a step of forming a groove on the surface of a semiconductor wafer and then performing backside grinding (DBG step: Dicing Before Grinding step) will be described below.

  7 and 8 are schematic cross-sectional views illustrating another method for manufacturing the semiconductor device according to the present embodiment. First, as shown in FIG. 7A, a groove 4S that does not reach the back surface 4R is formed on the front surface 4F of the semiconductor wafer 4 by the rotating blade 41. In forming the groove 4S, the semiconductor wafer 4 is supported by a support base (not shown). The depth of the groove 4S can be set as appropriate according to the thickness of the semiconductor wafer 4 and the conditions of the expansion. Next, as shown in FIG. 7B, the semiconductor wafer 4 is supported by the protective base material 42 so that the front surface 4F comes into contact with the semiconductor wafer 4. Then, the back surface is ground by the grinding wheel 45 to expose the groove 4S from the back surface 4R. Note that a conventionally known bonding apparatus can be used for attaching the protective base material 42 to the semiconductor wafer, and a conventionally known grinding apparatus can also be used for backside grinding.

  Next, as shown in FIG. 8, the semiconductor wafer 4 having the groove 4S exposed is pressure-bonded onto the dicing die-bonding film 10, and the semiconductor wafer 4 is fixed by bonding and holding. This step corresponds to step A of the present invention. After that, the protection base material 42 is peeled off, and tension is applied to the dicing die bond film 10 by the wafer expanding device 32. Thereby, the die bond film 3 is broken, and the semiconductor chip 5 is formed (chip forming step). This step corresponds to Step B of the present invention. The temperature, the expanding speed, and the expanding amount in the chip forming step are the same as those in the case where the modified region is formed on the planned division line 4L by irradiating the laser beam. Subsequent steps are the same as those in the case where the modified region is formed on the scheduled division line 4L by irradiating the laser beam, and thus the description thereof will be omitted.

The method for manufacturing a semiconductor device according to the present embodiment is not limited to the above-described embodiment as long as the semiconductor wafer and the die bond film are simultaneously broken in the cool expanding step or only the die bond film is broken in the cool expanding step. As another embodiment, for example, as shown in FIG. 7A, after forming a groove 4S that does not reach the back surface 4R on the front surface 4F of the semiconductor wafer 4 with the rotating blade 41, the groove 4S is formed on the dicing die bond film. Is press-bonded, and the semiconductor wafer 4 is bonded and fixed by fixing (temporary fixing step). Thereafter, tension is applied to the dicing die bond film by a wafer expanding device. Thereby, the semiconductor chip 4 may be formed by breaking the semiconductor wafer 4 and the die bond film 3 at the groove 4S.
However, the method for manufacturing a semiconductor device according to the present invention is not limited to this example.
For example,
A step A of attaching a semiconductor wafer to a dicing die bond film;
Dicing the semiconductor wafer together with the die-bonding film with a blade to obtain a chip with a die-bonding film;
A step C of picking up the chip with a die bond film;
A step D of die-bonding the picked-up chip with a die bond film to an adherend via a die bond film;
The method of manufacturing a semiconductor device may include a step E of performing wire bonding on the chip with a die bond film.

  Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to the following examples unless it exceeds the gist. In addition, in each example, all parts are by weight unless otherwise specified.

(Example 1)
<Production of dicing sheet>
In a reaction vessel equipped with a cooling pipe, a nitrogen introduction pipe, a thermometer, and a stirrer, 100 parts of 2-ethylhexyl acrylate (hereinafter, also referred to as “2EHA”) and 2-hydroxyethyl acrylate (hereinafter, “HEA”) were added. 19 parts, 0.4 parts of benzoyl peroxide, and 80 parts of toluene were added, and polymerized at 60 ° C. for 10 hours in a nitrogen stream to obtain an acrylic polymer A.
To this acrylic polymer A, 1.2 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as “MOI”) was added, and an addition reaction treatment was performed at 50 ° C. for 60 hours in an air stream to obtain an acrylic polymer A ′. I got
Next, 1.3 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and 100 parts of acrylic polymer A ′, and a photopolymerization initiator (trade name “Irgacure 184”) 3 parts of Ciba Specialty Chemicals Co., Ltd.) was added to prepare an adhesive solution (also referred to as “adhesive solution A”).
The pressure-sensitive adhesive solution A prepared as described above was applied to the silicone-treated surface of a PET release liner, and dried by heating at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer A having a thickness of 10 μm. Next, a 125 μm-thick EVA film (ethylene-vinyl acetate copolymer film) having a thickness of 125 μm was attached to the exposed surface of the pressure-sensitive adhesive layer A, and stored at 23 ° C. for 72 hours to obtain a dicing sheet A.

<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution A having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler A (trade name “YA010C-SP3” manufactured by Admatechs Co., Ltd., average particle size 10 nm): 100 parts (d) Colorant (trade name “OIL SCARLET 308”, manufactured by Orient Chemical Industry Co., Ltd.): 1 part

  The adhesive composition solution A was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film A was obtained.

(Example 2)
<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution B having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler B (trade name "YA010C-SV1" manufactured by Admatechs Co., Ltd., average particle size 10 nm): 100 parts (d) Colorant (trade name "OIL SCARLET 308", manufactured by Orient Chemical Industry Co., Ltd.): 1 part

  The adhesive composition solution B was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film B having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film B was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film B was obtained.

(Example 3)
<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution C having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler C (trade name "MEK-ST-40" manufactured by Nissan Chemical Industries, Ltd., average particle size 13 nm): 100 parts (d) Colorant (trade name "OIL SCARLET 308", manufactured by Orient Chemical Industries, Ltd.) : 1 copy

  The adhesive composition solution C was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film C having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film C was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film C was obtained.

(Example 4)
<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution D having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler D (trade name “MEK-ST-L” manufactured by Nissan Chemical Industries, Ltd., average particle size: 45 nm): 100 parts (d) Colorant (trade name “OIL SCARLET 308”, manufactured by Orient Chemical Co., Ltd.) : 1 copy

  The adhesive composition solution D was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film D having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film D was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film D was obtained.

(Example 5)
<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution E having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler E (trade name “MEK-ST-ZL” manufactured by Nissan Chemical Industries, Ltd., average particle size 85 nm): 100 parts (d) colorant (trade name “OIL SCARLET 308”, manufactured by Orient Chemical Industries, Ltd.) : 1 copy

  The adhesive composition solution E was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film E was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film E was obtained.

(Example 6)
<Preparation of die bond film>
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution F having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler D (trade name “MEK-ST-L” manufactured by Nissan Chemical Industries, Ltd., average particle size: 45 nm): 100 parts

  The adhesive composition solution F was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film F having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film F was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film F was obtained.

(Comparative Example 1)
<Preparation of die bond film>
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution G having a solid content of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler C (trade name "MEK-ST-40" manufactured by Nissan Chemical Industries, Ltd., average particle diameter 13 nm): 280 parts (d) Colorant (trade name "OIL SCARLET 308", manufactured by Orient Chemical Industries, Ltd.) : 2 copies

  The adhesive composition solution G was applied on a release film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film G having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film G was obtained.

(Comparative Example 2)
<Preparation of die bond film>
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution H having a solid concentration of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Filler F (trade name “SO-25R” manufactured by Adtex Co., Ltd., average particle size 500 nm): 100 parts

  The adhesive composition solution H was applied onto a release film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm and subjected to silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film H having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film H was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film H was obtained.

(Comparative Example 3)
<Preparation of die bond film>
The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution I having a solid content of 18% by weight.
(A) Acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.): 12 parts ( c) Colorant (trade name “OIL SCARLET 308”, manufactured by Orient Chemical Co., Ltd.): 1 part

  The adhesive composition solution I was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film I having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film I was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film I was obtained.

(Comparative Example 4)
<Preparation of die bond film>
The following (a) to (f) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution J having a solid content of 45% by weight.
(A) Acrylic resin (trade name “SG-P3” manufactured by Nagase ChemteX Corporation, molecular weight 850,000): 100 parts (b) Epoxy resin A (trade name “JER1010”, manufactured by Mitsubishi Chemical Corporation): 52 parts (c) ) Epoxy resin B (trade name "JER828", manufactured by Mitsubishi Chemical Corporation): 140 parts (d) Phenol resin (trade name "MEH-7851ss", manufactured by Meiwa Kasei Co., Ltd.) 210 parts (e) Filler C (trade name "MEK -ST-40 "manufactured by Nissan Chemical Industries, Ltd., average particle size 13 nm): 100 parts (f) 3 parts of curing accelerator (trade name" 2PHZ-PW "manufactured by Shikoku Chemicals Co., Ltd.)

  The adhesive composition solution J was applied on a release film (release liner) composed of a 50 μm-thick polyethylene terephthalate film subjected to a silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film J having a thickness (average thickness) of 5 μm and a thickness (average thickness) of 20 μm was obtained.

<Preparation of dicing die bond film>
The same dicing sheet A as used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and a die bond film J was bonded to the exposed pressure-sensitive adhesive layer. A hand roller was used for bonding. Next, ultraviolet rays of 300 mJ were irradiated from the dicing sheet side. Thus, a dicing die bond film J was obtained.

[Measurement of average particle size of filler]
The die-bonding films of Examples and Comparative Examples were heated at 175 ° C. for 1 hour, and thereafter, the heat-cured die-bonding films were embedded in a resin (EpoFix kit, manufactured by Struers). The embedded sample was mechanically polished to expose the cross section of the die bond film. Next, the cross section was subjected to ion milling using a CP device (cross section polisher, manufactured by JEOL Ltd., SM-09010). Thereafter, a conductive treatment was performed, and FE-SEM observation was performed. The FE-SEM was observed at an acceleration voltage of 1 to 5 kV, and a reflected electron image was observed. The captured image was binarized using image analysis software Image-J to identify filler particles. Next, the area of the filler particles in the image was divided by the number of filler particles in the image, the average area of the filler particles was determined, and the particle size was calculated.

[Measurement of tensile storage modulus at 150 ° C. and 175 ° C. before thermal curing of die-bonding film and glass transition temperature before thermal curing of die-bonding film]
The die bond films according to the example and the comparative example were overlaid until the thickness became 200 μm. Next, a strip having a length of 40 mm (measured length) and a width of 10 mm was cut out with a cutter knife. Next, the tensile storage modulus at −40 to 260 ° C. was measured using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Scientific Co., Ltd.). The measurement conditions were a distance between chucks of 20 mm, a tensile mode, a frequency of 1 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min. The measurement was started after holding at −40 ° C. for 5 minutes. At that time, the values at 150 ° C. and 175 ° C. were read and used as measured values of the tensile storage modulus.
Further, a temperature-tan δ curve was created from the obtained tan δ data, the temperature of the maximum value of tan δ of the largest peak was read, and the temperature was taken as the glass transition temperature before thermosetting. Table 1 shows the results.

[Measurement of glass transition temperature after thermosetting of die bond film]
The die bond films according to the example and the comparative example were overlaid until the thickness became 200 μm. Next, it heated at 175 degreeC for 1 hour, and was set as the die bond film after thermosetting. Next, a strip having a length of 40 mm (measured length) and a width of 10 mm was cut out with a cutter knife. Next, the tensile storage modulus at −40 to 260 ° C. was measured using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Scientific Co., Ltd.). The measurement conditions were a distance between chucks of 20 mm, a tensile mode, a frequency of 1 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min. The measurement was started after holding at −40 ° C. for 5 minutes. A temperature-tan δ curve was created from the obtained tan δ data, the temperature of the maximum value of the tan δ of the largest peak was read, and the temperature was taken as the glass transition temperature after thermosetting. Table 1 shows the results.

[Measurement of elongation at break at -15 ° C in a state before thermosetting of die-bonding film]
The die bond films according to the example and the comparative example were overlaid until the thickness became 200 μm. Next, a strip having a length of 60 mm (measured length) and a width of 10 mm was cut out with a cutter knife.
The elongation at break at -15 ° C was measured using a tensile tester (manufacturer: SHIMADZU: triple tensile tester with constant temperature and humidity chamber). The measurement conditions were a distance between chucks of 20 mm, a speed of 100 mm / min, and a measurement temperature of −15 ° C. The measurement was started after holding at −15 ° C. for 2 minutes. The breaking elongation was determined by the following equation. Table 1 shows the results.
[Elongation at break (%)] = [(length of adhesive sheet at break (mm) -20) / 20 × 100]

[Visibility evaluation]
The case where the boundary between the die bond film and the release treated film (release liner) was easily visually recognized was evaluated as Δ, and the case where the boundary was not easily recognized was evaluated as ×. Table 1 shows the results.

[Embedding evaluation]
The die-bonding film having a thickness of 20 μm obtained in each of the examples and the comparative examples was attached to a silicon wafer ground to 50 μm at 60 ° C., and singulated into chips of 10 mm square to obtain a chip with a die-bonding film. This chip with a die bond film was mounted on a BGA substrate under the conditions of a temperature of 150 ° C., a pressure of 0.1 MPa, and a time of 1 s. This was further heat-treated at 175 ° C. for 1 hour in a dryer. Then, using a mold machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamping pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, and a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the condition of ()). After the sealing step, voids at the interface between the BGA substrate and the die bond film were observed using an ultrasonic imaging device (FS200II, manufactured by Hitachi Finetech Co., Ltd.). The area occupied by voids in the observation image was calculated using binarization software (WinRoof ver. 5.6). The case where the area occupied by voids was less than 30% with respect to the surface area of the die bond film was evaluated as “「 ”, and the case where it was 30% or more was evaluated as“ × ”.

[Warp evaluation]
The die bond film having a thickness of 5 μm obtained in each of the examples and the comparative examples was attached to a silicon wafer ground to a thickness of 30 μm at 60 ° C., and diced into chips having a size of 15 mm × 10 mm. Thus, a chip with a die bond film was obtained.
This chip with a die bond film was mounted on a BGA substrate under the conditions of a temperature of 150 ° C., a pressure of 0.1 MPa, and a time of 1 s.
Further, a second chip was mounted on the mounted chip with a lateral shift of 300 μm. This operation was repeated until the number of chip stages became four. Five such laminates were prepared.
Set the stacked chips on a microscope so that the lateral sides of the chips can be seen, set the distance between the center of the first-stage chip and the BGA substrate to zero, and observe how much both ends are warped did. Specifically, the distance between the BGA substrate and each end was measured.
The average value of the amount of warpage at both ends was calculated. Further, the average value of the five laminated bodies was calculated. Those having an average value of less than 60 μm were evaluated as ○, and those having an average value of 60 μm or more were evaluated as x. Table 1 shows the results.

[Cool expand evaluation]
By using ML300-Integration manufactured by Tokyo Seimitsu Co., Ltd. as a laser processing device, a converging point is set inside a 12-inch semiconductor wafer, and a laser beam is irradiated along a grid (10 mm × 10 mm) dividing line. Then, a modified region was formed inside the semiconductor wafer. Laser irradiation conditions were as follows.
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross section 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30 ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized light (B) Condensing lens
50x magnification
NA 0.55
60% transmittance for laser light wavelength
(C) The moving speed of the placing table on which the semiconductor substrate is placed 100 mm / sec

  Next, a protective tape for back grinding was attached to the front surface of the semiconductor wafer, and the back surface was ground using a back grinder DGP8760 manufactured by Disco Corporation so that the thickness of the semiconductor wafer became 25 μm.

  Next, the semiconductor wafer and the dicing ring, which had been pretreated by laser light, were bonded to the dicing die bond films (thickness of the die bond film: 5 μm) of the examples and the comparative examples.

Next, using a die separator DDS2300 manufactured by Disco Co., the semiconductor wafer was cut and the dicing sheet was thermally shrunk to obtain a sample. Specifically, first, the semiconductor wafer was cleaved by a cool expander unit under the conditions of an expanding temperature of −15 ° C., an expanding speed of 100 mm / sec, and an expanding amount of 12 mm.
Thereafter, the dicing sheet was thermally shrunk by a heat expander unit under the conditions of an expansion amount of 10 mm, a heat temperature of 250 ° C., an air flow of 40 L / min, a heat distance of 20 mm, and a rotation speed of 3 ° / sec.
The pickup evaluation was performed using the obtained sample. Specifically, pickup was performed using a die bonder SPA-300 (manufactured by Shinkawa) under the following conditions. When all the chips could be picked up, the evaluation was evaluated as ○. Table 1 shows the results.
<Pickup conditions>
Pin count: 5
Pickup height: 500 μm
Pickup evaluation number: 50 chips

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3 Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Adherend 7 Bonding wire 8 Sealing resin 10 Dicing die bond film 11 Dicing sheet

Claims (9)

A filler having an average particle size in a range of 5 nm to 100 nm,
A thermoplastic resin,
Containing phenolic resin,
Tensile storage modulus at 0.99 ° C. before thermal curing state, and are less greater than 0.3 MPa 30 MPa,
Die-bonding film breaking elongation at -15 ° C. in a state before thermal curing, characterized in der Rukoto than 20%. The glass transition temperature before the heat curing T _0, when the glass transition temperature after thermal curing was T _1, the die-bonding film according to claim 1, characterized in that satisfy the following formula 1.
Equation 1 T ₀ <T ₁ <T ₀ +20   The die-bonding film according to claim 1, wherein the filler is a silica filler.   The die-bonding film according to any one of claims 1 to 3, wherein the thermoplastic resin is an acrylic polymer having an epoxy group.   The die bond film according to claim 1, further comprising a coloring agent.   The die bond film according to claim 5, wherein the colorant is a dye. The die bond film according to any one of claims 1 to 6, wherein when the average particle diameter of the filler is R and the thickness of the die bond film is T, the following formula 2 is satisfied.
Equation 2 10 <T / R Dicing sheet,
A dicing die-bonding film, comprising: the die-bonding film according to claim 1. A step A of attaching a semiconductor wafer to a dicing die-bonding film including a dicing sheet and a die-bonding film ;
Expanding the dicing die-bonding film, breaking at least the die-bonding film, and a step B of obtaining a chip with a die-bonding film,
A step C of picking up the chip with a die bond film;
A step D of die-bonding the picked-up chip with a die bond film to an adherend via a die bond film;
A step E of performing wire bonding on the chip with a die-bonding film,
The die bond film ,
A filler having an average particle size in a range of 5 nm to 100 nm,
A thermoplastic resin,
Containing phenolic resin,
Tensile storage modulus at 0.99 ° C. before thermal curing state, and are less greater than 0.3 MPa 30 MPa,
The method of manufacturing a semiconductor device breaking elongation at -15 ° C. in a state before thermal curing, characterized in der Rukoto than 20%.

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