JP5456807B2 - Dicing die bond film - Google Patents

Description

  The present invention provides, for example, a dicing die bond for dicing a semiconductor wafer in a state where a die bond film for adhering and fixing a semiconductor chip on an adherend such as a substrate or a lead frame is attached to the semiconductor wafer before dicing. Related to film.

  Conventionally, a paste adhesive such as a silver paste has been used for fixing a semiconductor chip to a lead frame or an electrode member in a manufacturing process of a semiconductor device. However, the paste-like adhesive has a large variation in the coating amount and the coating shape due to its viscosity behavior and deterioration. As a result, the thickness of the paste adhesive formed is not uniform, and the reliability of the adhesive strength related to the semiconductor chip is poor. More specifically, when the coating amount of the paste adhesive is insufficient, the adhesive strength between the semiconductor chip and the lead frame or the like is lowered, and the semiconductor chip may be peeled off in the subsequent wire bonding process. On the other hand, when the application amount of the paste adhesive is too large, the paste adhesive is cast onto the semiconductor chip, resulting in poor characteristics, and the yield and reliability are lowered. Such a problem becomes particularly prominent with an increase in the size of a semiconductor chip. Therefore, it is necessary to frequently control the amount of paste adhesive applied, which hinders workability and productivity.

  In order to solve such a problem, a dicing film has been proposed in which a semiconductor wafer is bonded and held in a dicing process and an adhesive layer for bonding a semiconductor chip is also bonded in a die bonding process (for example, Patent Documents). 1). A dicing die-bonding film having a dicing film provided with a pressure-sensitive adhesive layer on a substrate and a die-bonding film provided on the pressure-sensitive adhesive layer has also been proposed.

  When the dicing die-bonding film is used and the semiconductor wafer is diced under the holding of the die-bonding film, the die-bonding film needs to be cut simultaneously with the semiconductor wafer. However, in a general dicing method using a diamond blade, due to the effect of heat generated during dicing, adhesion between the die bond film and the dicing film, adhesion of semiconductor chips due to generation of cutting debris, cutting to the side surface of the semiconductor chip There is concern about the adhesion of scraps. For this reason, it is necessary to slow down the cutting speed, resulting in an increase in manufacturing cost.

  Therefore, in recent years, a method for obtaining individual semiconductor chips by forming grooves on the surface of a semiconductor wafer and then grinding the back surface (see, for example, Patent Document 2), or laser light on a division line in a semiconductor wafer. The semiconductor wafer can be easily divided along the planned dividing line by forming a modified region by irradiating the substrate, and then the semiconductor wafer is broken by applying tensile tension to obtain individual semiconductor chips. (For example, refer to Patent Document 3 and Patent Document 4). According to these methods, it is possible to reduce the occurrence of defects such as chipping, particularly when the thickness of the semiconductor wafer is thin, and to reduce the kerf width as compared with the conventional case, thereby improving the yield of semiconductor chips. Can be planned.

  Here, in order to obtain individual die bond film-attached semiconductor chips by the above method while holding the dicing film, the dicing film is expanded by applying tensile tension to the dicing die bond film, and the die bond film is cut along with the cutting of the semiconductor wafer. Need to break. However, when dicing and die-bonding film is expanded, there is a problem that the die-bonding film is peeled off from the semiconductor wafer before the die-bonding film breaks or misalignment occurs due to the lack of shear bonding force between the die-bonding film and the semiconductor wafer. There is. In addition, there is a problem that the die bond film and the dicing film are peeled off or misalignment occurs due to the lack of shear bonding force between the die bond film and the dicing film.

JP-A-60-57642 JP-A-2-24864

  The present invention has been made in view of the above problems, and its purpose is to form a semiconductor chip by dividing a semiconductor wafer by applying a tensile tension to the dicing die-bonding film, and between the die-bonding film and the semiconductor wafer. Another object of the present invention is to provide a dicing die-bonding film that does not cause peeling or misalignment between the die-bonding film and the dicing film.

  As a result of studies to achieve the above object, the present inventors have found that the object can be achieved by adopting the following configuration, and have completed the present invention.

  That is, the dicing die-bonding film according to the present invention comprises a dicing film having at least a pressure-sensitive adhesive layer provided on a substrate and a die-bonding film provided on the pressure-sensitive adhesive layer in order to solve the above problems. A dicing die-bonding film having a semiconductor wafer that is divided into a plurality of semiconductor chips by applying a tensile tension is pasted onto the die-bonding film, and the dicing die-bonding film is expanded. In the dicing die bond film that allows the die bond film to be broken and divided into the semiconductor chips, the shear adhesive force at 25 ° C. when the semiconductor wafer is temporarily bonded to the die bond film is τ1 (MPa ), Die bond film and die Τ1 is in the range of 6 to 30 MPa, τ2 is in the range of 0.5 to 3 MPa, and τ1−τ2 ) Is 4 or more, and the elongation at break of the die bond film is 40 to 500%.

  The dicing die-bonding film according to the present invention has a structure having a dicing film provided with at least an adhesive layer on a base material and a die-bonding film provided on the adhesive layer. It is not used in a method for manufacturing a semiconductor device including a dicing process in which a semiconductor wafer is divided into individual semiconductor chips by cutting using the method. The dicing die-bonding film of the present invention, instead of the conventional dicing step, affixed on the die-bonding film a semiconductor wafer that has been subjected to processing that can be divided into a plurality of semiconductor chips by applying tensile tension, The dicing die-bonding film is expanded (expanded) to be used in a method for manufacturing a semiconductor device including a step of dividing the die-bonding film into individual semiconductor chips along with the breaking of the die-bonding film.

  Here, when the shear adhesive force between the two when the semiconductor wafer is temporarily bonded to the die bond film is τ1 (MPa) and the shear adhesive force between the die bond film and the dicing film is τ2 (MPa), the present invention In the dicing die-bonding film, the τ1 is 6-30 MPa, the τ2 is 0.5-3 MPa, and (τ1-τ2) is 4 MPa or more. As a result, since the die bond film is more securely bonded and fixed to the semiconductor wafer (or semiconductor chip) than the dicing film, the dicing die bond film is expanded and the semiconductor wafer is divided to form the semiconductor chip. In addition, the die bond film can be broken without causing the die bond film to peel from the semiconductor wafer or to cause a positional shift. Moreover, it can prevent that peeling and position shift arise between a die-bonding film and a dicing film.

  Here, by making the elongation at break of the die bond film 40% or more, it is possible to prevent the die bond film from being cracked and the like, improve the handling property, and simultaneously break the semiconductor wafer and break the die bond film. be able to. On the other hand, the die bond film can be prevented from being broken by setting the elongation at break to 500% or less.

  The “temporary bonding” means that, for example, when the die bond film is a thermosetting type, the die bond film is not completely thermoset by heating. Further, the “shearing adhesive force τ1” is a value obtained by measuring, for example, as follows. That is, first, two semiconductor wafers are bonded to both sides of the die bond film. Bonding is performed using a laminator, for example, under conditions of a bonding speed of 10 mm / sec, a bonding temperature of 50 ° C., and a bonding pressure of 0.15 MPa. Next, even when the die bond film is a thermosetting type, it is shear-bonded by using a bond tester (made by dagy, dagy4000) under environmental conditions of a temperature of 25 ° C. and a humidity of 50% RH without thermosetting the die bond film. The force τ1 is measured. The setting conditions of the bond tester are, for example, a head height of 100 μm and a speed of 0.5 mm / sec. The “shear adhesive force τ 2” is a value obtained by measuring as follows, for example. That is, first, a semiconductor wafer is bonded to one surface of the die bond film. Bonding is performed using a laminator, for example, under conditions of a bonding speed of 10 mm / sec, a bonding temperature of 50 ° C., and a bonding pressure of 0.15 MPa. A dicing film is bonded to the other surface of the die bond film. Bonding is performed using a laminator, for example, under conditions of a bonding speed of 10 mm / sec, a bonding temperature of 50 ° C., and a bonding pressure of 0.15 MPa. Next, even when the die bond film is a thermosetting type, it is shear-bonded by using a bond tester (made by dagy, dagy4000) under environmental conditions of a temperature of 25 ° C. and a humidity of 50% RH without thermosetting the die bond film. The force τ2 is measured. The setting conditions of the bond tester are, for example, a head height of 100 μm and a speed of 0.5 mm / sec.

  The said structure WHEREIN: It is preferable that the glass transition temperature of the said die-bonding film temporarily bonded to the said semiconductor wafer exists in the range of -20-60 degreeC. By setting the glass transition temperature of the die bond film temporarily bonded to the semiconductor wafer to −20 ° C. or higher, the adhesion with the semiconductor wafer when temporarily bonded to the semiconductor wafer can be improved. On the other hand, by making the glass transition temperature 60 ° C. or lower, it is possible to prevent the breakability of the die bond film from being lowered when the dicing die bond film is expanded.

  The die bond film is formed of an epoxy resin and a phenol resin as thermosetting resins and an acrylic resin as a thermoplastic resin, and the total weight of the epoxy resin and the phenol resin is X parts by weight. X / (X + Y) when the weight is Y parts by weight is preferably 0.3 or more and less than 0.9. By making X / (X + Y) 0.3 or more and increasing the contents of the epoxy resin and the phenol resin, it is possible to facilitate breakage of the die bond film when the dicing die bond film is expanded. On the other hand, by reducing the X / (X + Y) to less than 0.9 and increasing the acrylic resin content, the die bond film is prevented from cracking when the dicing die bond film is attached to the semiconductor wafer. The workability can be improved. In addition, the adhesion to the semiconductor wafer can be improved.

  B / (A + B) is preferably 0.1 or more and 0.7 or less when the total weight of the epoxy resin, phenol resin and acrylic resin is A parts by weight and the weight of the filler is B parts by weight. By setting the B / (A + B) to 0.1 or more, the breakage of the die bond film when the dicing die bond film is expanded can be further facilitated. On the other hand, by setting the B / (A + B) to 0.7 or less, an increase in the tensile storage elastic modulus can be suppressed. As a result, for example, when a semiconductor chip with a die-bonding film is die-bonded on an adherend, a decrease in wettability with respect to the adherend can be suppressed and adhesion can be maintained well.

  At least one of the epoxy resin or the phenol resin preferably contains one or more resins having a melting point of 50 ° C. or higher. By including a resin having a melting point of 50 ° C. or higher, the die bond film can be more easily broken when the dicing die bond film is expanded.

  The dicing die-bonding film of the present invention has a structure having a dicing film having at least a pressure-sensitive adhesive layer provided on a base material and a die-bonding film provided on the pressure-sensitive adhesive layer. A step of pasting a semiconductor wafer on which processing that can be divided into semiconductor chips is performed on the die bond film, and then expanding the dicing die bond film to divide into individual semiconductor chips together with the breakage of the die bond film. It is used for the manufacturing method of the semiconductor device containing.

  In the expansion of the dicing die bond film, by making the breaking elongation rate of the die bond film 40% or more, the die bond film is prevented from being cracked, improving the handling property, and separating the semiconductor wafer and die bonding. The film can be broken simultaneously. On the other hand, the die bond film can be prevented from being broken by setting the elongation at break to 500% or less.

  Further, when the semiconductor wafer is temporarily bonded to the die bond film, the shear adhesive force between the two is τ1 (MPa), and the shear adhesive force between the die bond film and the dicing film is τ2 (MPa), τ2 is 0.5. ≦ τ2 ≦ 3, and τ1 and τ2 satisfy the relationship 4 ≦ τ1-τ2 ≦ 20. Therefore, when the dicing die-bonding film is expanded, the die-bonding film is broken and the semiconductor wafer is divided to form a semiconductor chip. In addition, it is possible to prevent the die bond film from being peeled off from the semiconductor wafer and the occurrence of misalignment. Moreover, it can also prevent that peeling and position shift arise between a die-bonding film and a dicing film. That is, the dicing die-bonding film of the present invention improves the throughput and enables the manufacture of a semiconductor device.

It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. FIGS. 4A and 4B are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to the present embodiment. It is a cross-sectional schematic diagram for demonstrating one manufacturing method of the semiconductor device which concerns on this embodiment. FIGS. 4A and 4B are schematic cross-sectional views for explaining another method for manufacturing the semiconductor device according to the present embodiment. It is a cross-sectional schematic diagram for demonstrating the other manufacturing method of the semiconductor device which concerns on this embodiment. It is a figure which shows an example of a stress-strain curve.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing an example of a dicing die-bonding film according to the present embodiment. FIG. 2 is a schematic cross-sectional view showing another dicing die-bonding film according to another embodiment of the present invention.

  As shown in FIG. 1, the dicing die-bonding film 10 includes at least a dicing film 11 provided with a pressure-sensitive adhesive layer 2 on a base material 1 and a die-bonding film 3 provided on the pressure-sensitive adhesive layer 2. It is a configuration. However, the present invention may have a configuration in which the die bond film 3 ′ is formed only on the semiconductor wafer attaching portion 2 a like the dicing die bond film 12 shown in FIG. 2.

  When the shear adhesive force at 25 ° C. when the semiconductor wafer is temporarily bonded to the die bond film 3 is τ1 (MPa), τ1 is preferably in the range of 6 to 30 MPa, and more preferably in the range of 8 to 20 MPa. By setting the τ1 to 6 MPa or more, it is possible to prevent peeling or misalignment between the die bond film 3 and the semiconductor wafer when the dicing die bond film 10 is expanded (expanded). Further, by setting τ1 to 30 MPa or less, when a positional deviation or the like occurs in the semiconductor wafer temporarily bonded to the die bond film 3, the semiconductor wafer and the die bond film 3 can be reworked.

  When the shear adhesive force at 25 ° C. between the dicing film 11 and the die bond film 3 is τ2 (MPa), τ2 is preferably in the range of 0.5 to 3 MPa, and more preferably in the range of 0.5 to 2 MPa. . By setting the τ2 to 0.5 MPa or more, it is possible to prevent peeling or misalignment between the dicing film 11 and the die bond film 3 when the dicing die bond film 10 is expanded. Further, by setting τ2 to 2 MPa or less, the peelability at the time of picking up the semiconductor chip can be improved.

  The (τ1-τ2) is 4 MPa or more, preferably 4 to 20 MPa, more preferably 5 to 15 MPa. By setting (τ1-τ2) to 4 MPa or more, since the die bond film 3 is more securely bonded and fixed to the semiconductor wafer (or semiconductor chip) than the dicing film 11, the dicing die bond film 10 is expanded. At this time, it is possible to prevent the die bond film 3 from being peeled off from the semiconductor wafer and the occurrence of positional deviation. Incidentally, by setting the (τ1-τ2) to 20 MPa or less, the die bond film 3 and the dicing film 11 can be adhered to some extent, and peeling between the die bond film 3 and the dicing film 11 during dicing or expanding can be performed. Misalignment can be prevented.

  The base material 1 is a strength matrix of the dicing die bond film 10. Examples of the base material 1 include polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, very low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, and polymethylpentene. , Ethylene-vinyl acetate copolymer, ethylene-propylene copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene Copolymer, ethylene-hexene copolymer, polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, poly Examples include plastic films made of polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, silicone resin, and mixtures thereof. It is done.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip Can be easily recovered.

  The surface of the base material 1 may be subjected to a conventional surface treatment in order to improve adhesion, retention, etc. with adjacent layers. Examples of the method include chemical treatment or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, and ionizing radiation treatment, and coating treatment with a primer (for example, an adhesive substance described later).

  The base material 1 can be used by appropriately selecting the same type or different types. Moreover, what blended several types can be used as needed. Furthermore, as the base material 1, in order to impart antistatic ability, a deposited layer of a conductive material having a thickness of about 30 to 500 mm and made of a metal, an alloy, or an oxide thereof is provided on the plastic film. Films can also be used. Furthermore, the laminated body which bonded together the said films or another film can also be used. Further, the substrate 1 may be a single layer or a laminated film in which a film or the like using the material is formed into two or more layers. In addition, when the adhesive layer 2 is a radiation curing type, it is preferable to use the substrate 1 that transmits at least part of radiation such as X-rays, ultraviolet rays, and electron beams.

  The thickness of the substrate 1 is not particularly limited as long as it can withstand the stress applied by the curing shrinkage during the thermosetting of the die bond films 3 and 3 ′, and can be appropriately set. 200 μm is preferred.

  The pressure-sensitive adhesive layer 2 may be formed of a radiation curable pressure-sensitive adhesive. In this case, the pressure-sensitive adhesive layer 2 may not be cured before the die-bonding films 3 and 3 ′ are bonded together, but is preferably cured in advance by irradiation with radiation. The cured part does not have to be the entire area of the pressure-sensitive adhesive layer 2, and at least the part 2a corresponding to the wafer bonding part 3a of the pressure-sensitive adhesive layer 2 only needs to be cured (see FIG. 1). If the pressure-sensitive adhesive layer 2 is cured by irradiation before being bonded to the die-bonding film 3, it is bonded to the die-bonding film 3 in a hard state, and therefore excessively at the interface between the pressure-sensitive adhesive layer 2 and the die-bonding film 3. It can suppress that adhesiveness becomes large. Thereby, the anchoring effect between the adhesive layer 2 and the die-bonding film 3 can be reduced, and the peelability can be improved.

  Further, the radiation curable pressure-sensitive adhesive layer 2 may be cured in advance in accordance with the shape of the die bond film 3 ′ shown in FIG. 2. Thereby, it can suppress that adhesiveness becomes large too much in the interface of the adhesive layer 2 and the die-bonding film 3. FIG. As a result, the die-bonding film 3 ′ is easily peeled off from the pressure-sensitive adhesive layer 2 at the time of pickup. On the other hand, the other part 2b of the pressure-sensitive adhesive layer 2 is uncured because it is not irradiated with radiation, and has a higher adhesive force than the part 2a. Thereby, when a dicing ring is affixed on the other part 2b, the dicing ring can be securely bonded and fixed.

  As described above, in the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10 shown in FIG. 1, the portion 2b formed of the uncured radiation-curable pressure-sensitive adhesive sticks to the die-bonding film 3 and is used when dicing. A holding force can be secured. In this way, the radiation curable pressure-sensitive adhesive can support the die bond film 3 for fixing the semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 12 shown in FIG. 2, the portion 2b can fix the dicing ring. The dicing ring can be made of a metal such as stainless steel or a resin.

  Although it does not restrict | limit especially as an adhesive which comprises the adhesive layer 2, In this invention, a radiation curing type adhesive is suitable. As the radiation curable pressure-sensitive adhesive, those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.

  Examples of the radiation curable pressure sensitive adhesive include general pressure sensitive adhesives such as the acrylic pressure sensitive adhesive, rubber pressure sensitive adhesive, silicone pressure sensitive adhesive, and polyvinyl ether pressure sensitive adhesive, and radiation curable monomer components and radiation. An additive type radiation curable pressure-sensitive adhesive containing a curable oligomer component can be exemplified. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer from the viewpoint of cleanability with an organic solvent such as ultrapure water or alcohol of an electronic component that is difficult to contaminate a semiconductor wafer or glass Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, 5 parts by weight or less is preferable with respect to 100 parts by weight of the base polymer. Moreover, it is preferable that it is 0.1 weight part or more as a lower limit. Furthermore, additives such as various tackifiers and anti-aging agents may be used for the adhesive, if necessary, in addition to the above components.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the ultraviolet curable oligomer component include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable. The blending amount of the ultraviolet curable monomer component and oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  As the radiation curable pressure-sensitive adhesive, in addition to the additive-type radiation curable pressure-sensitive adhesive, a base polymer having a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal was used. An internal radiation-curable pressure-sensitive adhesive is also included. Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain much, so they are stable without the oligomer components moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted, but it is easy to introduce the carbon-carbon double bond into the polymer side chain in terms of molecular design. It is. For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic ultraviolet curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the ultraviolet curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The UV-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-methylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1 Acetophenone compounds such as [4- (methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; 2-methyl-2-hydroxy Propi Α-ketone compounds such as phenone, ketal compounds such as benzyldimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) ) Photoactive oxime compounds such as oximes; benzophenone compounds such as benzophenone, benzoylbenzoic acid, 3,3′-dimethyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, Thioxanthone compounds such as 4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone Acylphosph Nokishido; acyl phosphonium diisocyanate and the like. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the radiation curable pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 include an addition polymerizable compound having two or more unsaturated bonds and an epoxy group disclosed in JP-A-60-196956. Examples include rubber adhesives and acrylic adhesives that contain a photopolymerizable compound such as alkoxysilane and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, or an onium salt compound. It is done. Examples of the addition polymerizable compound having two or more unsaturated bonds include polyhydric alcohol ester or oligoester of acrylic acid or methacrylic acid, epoxy or urethane compound, and the like.

  The compounding amount of the photopolymerizable compound or photopolymerization initiator is generally 10 to 500 parts by weight and 0.05 to 20 parts by weight per 100 parts by weight of the base polymer, respectively. In addition to these blending components, if necessary, an epoxy group functional crosslinking agent having one or more epoxy groups in the molecule such as ethylene glycol diglycidyl ether is additionally blended, You may make it raise crosslinking efficiency.

  In the pressure-sensitive adhesive layer 2 using the radiation-curable pressure-sensitive adhesive, a compound that is colored by irradiation with radiation can be contained as necessary. By including a compound to be colored in the pressure-sensitive adhesive layer 2 by irradiation with radiation, only the irradiated portion can be colored. That is, the pressure-sensitive adhesive layer 2a corresponding to the wafer pasting portion 3a can be colored. Thereby, it can be immediately determined by visual inspection whether the adhesive layer 2 is irradiated with radiation, the wafer pasting portion 3a can be easily recognized, and the semiconductor wafer can be easily pasted. Further, when detecting a semiconductor element by an optical sensor or the like, the detection accuracy is increased, and no malfunction occurs when the semiconductor element is picked up.

  A compound that is colored by radiation irradiation is a compound that is colorless or light-colored before radiation irradiation, but becomes colored by radiation irradiation. Preferable specific examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane, fluoran, phenothiazine, auramine, and spiropyran dyes are preferably used. Specifically, 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "-trisdimethyl Examples thereof include aminotriphenylmethanol, 4,4 ′, 4 ″ -trisdimethylaminotriphenylmethane, and the like.

  Developers preferably used together with these leuco dyes include conventionally used initial polymers of phenol formalin resins, aromatic carboxylic acid derivatives, electron acceptors such as activated clay, and further change the color tone. In some cases, various color formers can be used in combination.

  Such a compound colored by irradiation with radiation may be once dissolved in an organic solvent and then included in the radiation-curable pressure-sensitive adhesive, or may be finely powdered and included in the pressure-sensitive adhesive layer 2. Good. The compound is used in an amount of 0.01 to 10% by weight, preferably 0.5 to 5% by weight in the pressure-sensitive adhesive layer 2. When the proportion of the compound exceeds 10% by weight, the radiation applied to the pressure-sensitive adhesive layer 2 is absorbed too much by the compound, so that the pressure-sensitive adhesive layer 2a is not sufficiently cured and the pressure-sensitive adhesive strength is sufficiently reduced. There are things that do not. On the other hand, when the compound is used in an amount of less than 0.01% by weight, the pressure-sensitive adhesive sheet may not be sufficiently colored when irradiated with radiation, and malfunction may easily occur when picking up a semiconductor element.

  When the pressure-sensitive adhesive layer 2 is formed of a radiation-curable pressure-sensitive adhesive, after the radiation-curable pressure-sensitive adhesive layer 2 is formed on the substrate 1, radiation is partially applied to the portion corresponding to the wafer pasting portion 3a. A method of forming the pressure-sensitive adhesive layer 2a by irradiating and curing is mentioned. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the wafer bonding portion 3a is formed. Moreover, the method etc. of irradiating and irradiating a spot radiation are mentioned. The radiation-curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the substrate 1. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, all or a part of the base material 1 other than the part corresponding to the wafer bonding part 3a is shielded from light. It is possible to form a pressure-sensitive adhesive layer 2a having a reduced adhesive strength by using the radiation-curable pressure-sensitive adhesive layer 2 formed thereon and irradiating with radiation to cure the portion corresponding to the wafer pasting portion 3a. . As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the dicing die-bonding film of the present invention can be efficiently manufactured.

  In addition, when hardening inhibition by oxygen occurs at the time of radiation irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 2. Examples of the method for blocking oxygen include a method of covering the surface of the pressure-sensitive adhesive layer 2 with a separator, and a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere.

  The pressure-sensitive adhesive layer 2 may be configured to have the following relationship with respect to the peelability from the die bond film 3. That is, the interface corresponding to the wafer bonding part 3a (hereinafter sometimes referred to as the die bond film 3a) of the die bond film 3 corresponds to the other part 3b (hereinafter also referred to as the die bond film 3b). There is a relationship that the peelability is larger than that. In order to satisfy this relationship, the pressure-sensitive adhesive layer 2 has, for example, a pressure-sensitive adhesive force of a portion 2a (hereinafter sometimes referred to as pressure-sensitive adhesive layer 2a) corresponding to a wafer bonding portion 3a (which will be described later) <one of other portions. It is designed to have the adhesive strength of the part 2b (hereinafter sometimes referred to as the adhesive layer 2b) corresponding to the part or the whole.

  The adhesive strength of the adhesive layer 2a is based on the adhesive strength at normal temperature (23 ° C.) (90-degree peel value, peeling speed of 300 mm / min), such as the fixing holding power of the semiconductor wafer and the recoverability of the formed chip. From the point, it is preferably 0.5 N / 20 mm or less, more preferably 0.01 to 0.42 N / 20 mm, and particularly preferably 0.01 to 0.35 N / 20 mm. On the other hand, the adhesive strength of the pressure-sensitive adhesive layer 2b is preferably about 0.5 to 20 N / 20 mm. Even if the pressure-sensitive adhesive layer 2a has a low peel pressure, the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer 2b can suppress the occurrence of chip jumping and the like, and can exhibit a sufficient holding power for wafer processing.

  Although it does not restrict | limit especially as an adhesive which comprises the adhesive layer 2, In this Embodiment, the above-mentioned radiation-curable adhesive is suitable. This is because it is easy to give a difference in the adhesive force between the pressure-sensitive adhesive layer 2a and the pressure-sensitive adhesive layer 2b. A radiation-curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation with radiation such as ultraviolet rays. Therefore, the area | region where adhesive force fell remarkably can be easily formed by irradiating and hardening the adhesive layer 2a corresponding to the wafer bonding part 3a. Since the adhesive layer 2a that has been cured and the adhesive strength has been reduced is located at the wafer attachment portion 3a of the die bond film 3, the interface between the adhesive layer 2a and the wafer attachment portion 3a is easily peeled off during pickup. Has properties.

  On the other hand, the pressure-sensitive adhesive layer 2b that is not irradiated with radiation is formed of an uncured radiation-curable pressure-sensitive adhesive, and therefore has sufficient adhesive strength. For this reason, the pressure-sensitive adhesive layer 2b is securely adhered to the die bond film 3, and as a result, the pressure-sensitive adhesive layer 2 as a whole can secure a holding force capable of sufficiently fixing the die bond film 3 even during dicing. Thus, the pressure-sensitive adhesive layer 2 formed of the radiation-curable pressure-sensitive adhesive can support the die bond film 3 for fixing the semiconductor chip or the like to the substrate or the semiconductor chip with a good balance of adhesion and peeling.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably, from the viewpoint of chipping prevention of chip cross section and compatibility of fixing and holding the adhesive layer. 5 to 25 μm.

The storage elastic modulus of the pressure-sensitive adhesive layer 2 is preferably 1 × 10 ⁴ to 1 × 10 ¹⁰ Pa in the temperature range of −10 to 30 ° C. By setting the storage elastic modulus of the pressure-sensitive adhesive layer 2 to 1 × 10 ⁴ Pa or more, chipping of the semiconductor chip can be prevented when the semiconductor wafer is divided to form the semiconductor chip. On the other hand, by setting the storage elastic modulus to 1 × 10 ¹⁰ Pa or less, when picking up the semiconductor chip with the die-bonding films 3 and 3 ′, it is possible to prevent occurrence of chip jumping and positional deviation of the semiconductor chip. be able to.

The breaking energy per unit area at room temperature (for example, 23 to 25 ° C.) of the portion where the dicing film 11 is attached to the semiconductor wafer is preferably 1 to ² J / mm ² or more, and 1.2 to 1.8 J / mm ^2. Is more preferable, and 1.4 to 1.6 J / mm ² is more preferable. Moreover, 40-1000% is preferable and the break elongation rate at room temperature in the case of the expansion of the part affixed to the semiconductor wafer of the dicing film 11 is 100-500%. By setting the breaking energy and the breaking elongation within the above ranges, the dicing film 11 can be prevented from breaking in the expanding step described later. The breaking energy was measured for a stress-strain curve for a sample having a width of 10 mm, a distance between chucks of 20 mm, and a thickness of 5 to 250 μm using a tensile tester at a tensile speed of 0.5 m / min. Is obtained from the lower area (see FIG. 9). The elongation at break is obtained by (((distance between chucks at break (mm)) − 20) / 20) × 100.

  The laminated structure of the die bond film is not particularly limited. For example, the die bond film 3 or 3 ′ (see FIGS. 1 and 2) is composed of a single layer of the adhesive layer, or is bonded to one or both sides of the core material. The thing of the multilayer structure which formed the agent layer is mentioned. Examples of the core material include films (for example, polyimide films, polyester films, polyethylene terephthalate films, polyethylene naphthalate films, polycarbonate films, etc.), resin substrates reinforced with glass fibers or plastic non-woven fibers, silicon substrates, glass substrates, and the like. Is mentioned.

  Examples of the adhesive composition constituting the die bond films 3 and 3 ′ include a combination of a thermoplastic resin and a thermosetting resin.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type. Biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., bifunctional epoxy resin or polyfunctional epoxy resin, or hydantoin type, trisglycidyl isocyanurate Type or glycidylamine type epoxy resin is used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.

  Furthermore, the phenol resin acts as a curing agent for the epoxy resin. Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per 1 equivalent of the epoxy group in the epoxy resin component. . More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  At least one of the epoxy resin and the phenol resin preferably contains one or more resins having a melting point of 50 ° C. or higher. This is because a resin having a melting point of 50 ° C. or higher is included, and the die bond film is more preferably broken by the tensile tension. As epoxy resins having a melting point of 50 ° C. or higher, AER-8039 (Asahi Kasei Epoxy, melting point 78 ° C.), BREN-105 (Nippon Kayaku, melting point 64 ° C.), BREN-S (Nippon Kayaku, melting point 83 ° C.) ), CER-3000L (manufactured by Nippon Kayaku, melting point 90 ° C.), EHPE-3150 (manufactured by Daicel Chemical, melting point 80 ° C.), EPPN-501HY (manufactured by Nippon Kayaku, melting point 60 ° C.), ESN-165M (manufactured by Nippon Steel Chemical) , Melting point 76 ° C), ESN-175L (manufactured by Nippon Steel Chemical Co., Ltd., melting point 90 ° C), ESN-175S (manufactured by Nippon Steel Chemical Co., Ltd., melting point 67 ° C), ESN-355 (manufactured by Nippon Steel Chemical Co., Ltd., melting point 55 ° C), ESN-375 (Nippon Steel) Chemical, melting point 75 ° C), ESPD-295 (Sumitomo Chemical, melting point 69 ° C), EXA-7335 (Dainippon Ink, melting point 99 ° C), EXA-7337 (Dainippon Ink) , Melting point 70 ° C), HP-7200H (Dainippon Ink, melting point 82 ° C), TEPIC-SS (Nissan Chemical, melting point 108 ° C), YDC-1312 (manufactured by Tohto Kasei, melting point 141 ° C), YDC-1500 ( Toto Kasei, melting point 101 ° C), YL-6121HN (manufactured by JER, melting point 130 ° C), YSLV-120TE (manufactured by Toto Kasei, melting point 113 ° C), YSLV-80XY (manufactured by Toto Kasei, melting point 80 ° C), YX-4000H (Manufactured by JER, melting point 105 ° C.), YX-4000K (manufactured by JER, melting point 107 ° C.), ZX-650 (manufactured by Tohto Kasei, melting point 85 ° C.), epicoat 1001 (manufactured by JER, melting point 64 ° C.), epicoat 1002 (manufactured by JER) , Melting point 78 ° C.), Epicoat 1003 (manufactured by JER, melting point 89 ° C.), Epicoat 1004 (manufactured by JER, melting point 97 ° C.), Epicoat 100 FS (JER Co., Ltd., melting point 112 ° C.) can be mentioned. Among them, AER-8039 (Asahi Kasei Epoxy, melting point 78 ° C), BREN-105 (Nippon Kayaku, melting point 64 ° C), BREN-S (Nippon Kayaku, melting point 83 ° C), CER-3000L (Nippon Kasei). Medicinal product, melting point 90 ° C), EHPE-3150 (manufactured by Daicel Chemical, melting point 80 ° C), EPPN-501HY (manufactured by Nippon Kayaku, melting point 60 ° C), ESN-165M (manufactured by Nippon Steel Chemical Co., Ltd., melting point 76 ° C), ESN- 175L (manufactured by Nippon Steel Chemical Co., Ltd., melting point 90 ° C.), ESN-175S (manufactured by Nippon Steel Chemical Co., Ltd., melting point 67 ° C.), ESN-355 (manufactured by Nippon Steel Chemical Co., Ltd., melting point 55 ° C.), ESN-375 (manufactured by Nippon Steel Chemical Co., Ltd., melting point 75 ° C.) ESPD-295 (Sumitomo Chemical, melting point 69 ° C.), EXA-7335 (Dainippon Ink, melting point 99 ° C.), EXA-7337 (Dainippon Ink, melting point 70 ° C.), HP-720 H (Dainippon Ink, melting point 82 ° C.), YSLV-80XY (Toto Kasei, melting point 80 ° C.), ZX-650 (Toto Kasei, melting point 85 ° C.), Epicoat 1001 (JER, melting point 64 ° C.), Epicoat 1002 (manufactured by JER, melting point 78 ° C.), Epicoat 1003 (manufactured by JER, melting point 89 ° C.), and Epicoat 1004 (manufactured by JER, melting point 97 ° C.) are preferable. Since these epoxy resins have a melting point that is not too high (less than 100 ° C.), when the semiconductor wafer 4 is mounted on the die bond film 3, 3 ′, the semiconductor wafer 4 is likely to stick to the die bond film 3, 3 ′. Because.

  As a phenol resin having a melting point of 50 ° C. or more, DL-65 (Maywa Kasei, melting point 65 ° C.), DL-92 (Maywa Kasei, melting point 92 ° C.), DPP-L (Nippon Petroleum, melting point 100 ° C.), GS-180 (manufactured by Gunei Chemical Co., melting point 83 ° C), GS-200 (manufactured by Gunei Chemical Co., melting point 100 ° C), H-1 (manufactured by Meiwa Kasei Co., Ltd., melting point 79 ° C), H-4 (manufactured by Meiwa Kasei Co., Ltd., melting point) 71 ° C), HE-100C-15 (manufactured by Sumitomo Chemical, melting point 73 ° C), HE-510-05 (manufactured by Sumitomo Chemical, melting point 75 ° C), HF-1 (manufactured by Meiwa Kasei, melting point 84 ° C), HF-3 (Maywa Kasei, melting point 96 ° C), MEH-7500 (Maywa Kasei, melting point 111 ° C), MEH-7500-3S (Maywa Kasei, melting point 83 ° C), MEH-7800-3L (Maywa Kasei, melting point 72) ° C), MEH-7851 (Maywa Kasei, melting point 78) ), MEH-7851-3H (Maywa Kasei, melting point 105 ° C.), MEH-7851-4H (Maywa Kasei, melting point 130 ° C.), MEH-7851S (Maywa Kasei, melting point 73 ° C.), P-1000 (Arakawa) Chemical, melting point 63 ° C), P-180 (Arakawa Chemical, melting point 83 ° C), P-200 (Arakawa Chemical, melting point 100 ° C), VR-8210 (Mitsui Chemicals, melting point 60 ° C), XLC-3L (Mitsui Chemicals, melting point 70 ° C.), XLC-4L (Mitsui Chemicals, melting point 62 ° C.), XLC-LL (Mitsui Chemicals, melting point 75 ° C.). Among them, DL-65 (Maywa Kasei, melting point 65 ° C), DL-92 (Maywa Kasei, melting point 92 ° C), GS-180 (Gunei Chemical, melting point 83 ° C), H-1 (Maywa Kasei) , Melting point 79 ° C.), H-4 (Maywa Kasei, melting point 71 ° C.), HE-100C-15 (Sumitomo Chemical, melting point 73 ° C.), HE-510-05 (Sumitomo Chemical, melting point 75 ° C.), HF -1 (Maywa Kasei, melting point 84 ° C), HF-3 (Maywa Kasei, melting point 96 ° C), MEH-7500-3S (Maywa Kasei, melting point 83 ° C), MEH-7800-3L (Maywa Kasei, Melting point 72 ° C.), MEH-7851 (Maywa Kasei, melting point 78 ° C.), MEH-7851S (Maywa Kasei, melting point 73 ° C.), P-1000 (Arakawa Chemical, melting point 63 ° C.), P-180 (Arakawa Chemical) Manufactured, melting point 83 ° C.), VR-8210 (Mitsui Chemicals, melting 60 ℃), XLC-3L (manufactured by Mitsui Chemicals, Inc., melting point 70 ℃), XLC-4L (manufactured by Mitsui Chemicals, Inc., melting point 62 ℃), XLC-LL (from Mitsui Chemicals, melting point 75 ° C.), are preferred. Since these phenol resins have a melting point that is not too high (less than 100 ° C.), when the semiconductor wafer 4 is mounted on the die bond film 3, 3 ′, the semiconductor wafer 4 is likely to stick to the die bond film 3, 3 ′. Because.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples thereof include a polymer (acrylic copolymer) as a component. Examples of the alkyl group include a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include an ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.

  Among the acrylic resins, an acrylic copolymer is particularly preferable for the reason of improving cohesion. Examples of the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  The mixing ratio of the thermosetting resin is not particularly limited as long as the die-bonding films 3 and 3 ′ exhibit a function as a thermosetting type when heated under predetermined conditions. It is preferably within the range, and more preferably within the range of 10 to 50% by weight.

  Among the die bond films 3 and 3 ′, the adhesive layer contains an epoxy resin and a phenol resin as the thermosetting resin, and an acrylic resin as the thermoplastic resin, and the epoxy resin. X / (X + Y) is preferably 0.3 or more and less than 0.9, where X is X and Y is the weight of the acrylic resin, and 0.35 or more and 0.85. More preferably, it is more preferably less than 0.3 and less than 0.8. By making X / (X + Y) 0.3 or more, cracks and the like are prevented from occurring in the die bond films 3 and 3 ′, and handling properties are improved, and the semiconductor wafer is divided and the die bond films 3 and 3 ′. Can be simultaneously broken. On the other hand, by making X / (X + Y) less than 0.9, it is possible to prevent only the semiconductor wafer from being divided and the die bond films 3, 3 'from being broken.

  When the die-bonding films 3, 3 ′ of the present invention are previously crosslinked to some extent, a polyfunctional compound that reacts with the functional group at the molecular chain end of the polymer is added as a crosslinking agent during production. Is good. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  Moreover, a filler can be suitably mix | blended with die-bonding film 3, 3 'according to the use. The blending of the filler enables imparting conductivity, improving thermal conductivity, adjusting the elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferable from the viewpoints of characteristics such as improvement in handleability, improvement in thermal conductivity, adjustment of melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate whisker. , Boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. Further, from the viewpoint that the above properties are well balanced, crystalline silica or amorphous silica is preferable. In addition, a conductive substance (conductive filler) may be used as the inorganic filler for the purpose of imparting conductivity and improving thermal conductivity. Examples of the conductive filler include metal powder in which silver, aluminum, gold, cylinder, nickel, conductive alloy and the like are made into a spherical shape, needle shape and flake shape, metal oxide such as alumina, amorphous carbon black, graphite and the like.

  The average particle size of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. This is because when the average particle size of the filler is 0.005 μm or more, the wettability to the adherend and the adhesiveness can be improved. Moreover, by setting it as 10 micrometers or less, while being able to make the effect of the filler added for provision of said each characteristic sufficient, heat resistance can be ensured. In addition, the average particle diameter of a filler is the value calculated | required, for example with the photometric type particle size distribution analyzer (The product made from HORIBA, apparatus name; LA-910).

  The adhesive layer contains an epoxy resin and a phenol resin as the thermosetting resin, an acrylic resin as the thermoplastic resin, and a filler, and the epoxy resin and the phenol resin. When the total weight with the acrylic resin is A and the weight of the filler is B, B / (A + B) is preferably 0.1 or more and 0.7 or less, and 0.1 or more and 0.65 or less. More preferably, it is 0.1 or more and 0.6 or less. By setting the B / (A + B) to 0.7 or less, it is possible to prevent the tensile storage elastic modulus from being increased, and to improve the wettability and adhesion to the adherend. . Further, by setting B / (A + B) to be 0.1 or more, the die bond films 3 and 3 ′ can be suitably broken when the dicing die bond film 10 is expanded.

  In addition to the said filler, other additives can be suitably mix | blended with the die-bonding films 3 and 3 'as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Although the thickness (in the case of a laminated body) of die-bonding films 3 and 3 'is not specifically limited, For example, it can select from the range of 1-200 micrometers, Preferably it is 5-100 micrometers, More preferably, it is 10- 80 μm.

  The die bond films 3 and 3 ′ are such that the adhesive strength of the semiconductor wafer attaching portion 3a to the semiconductor wafer and the adhesive strength to the adhesive layer 2a are: adhesive strength to the semiconductor wafer> adhesive strength to the adhesive layer 2a. Preferably it is designed. The adhesive strength with respect to the semiconductor wafer is appropriately adjusted according to the type of the semiconductor wafer.

  The adhesive strength (90 degree peel value, peeling speed 300 mm / min) of the semiconductor wafer pasting portion 3a to the adhesive layer 2a is 0.5 N / 20 mm or less, further 0.01 to 0.42 N / 20 mm, particularly 0. It is preferably 0.01 to 0.35 N / 20 mm. On the other hand, the adhesive force (same condition as above) of the workpiece pasting portion 3a to the semiconductor wafer is 10 to 50 N / 20 mm or less, more preferably 10 to 30 N / in, from the viewpoint of reliability at the time of dicing, picking up, die bonding, and picking up. 20 mm is preferred.

  The die bond films 3, 3 'of the dicing die bond films 10, 12 are preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond films 3 and 3 ′ until they are put into practical use. Further, the separator can be used as a base material for transferring the die bond films 3 and 3 ′ to the pressure-sensitive adhesive layer 2. The separator is peeled off when a workpiece is stuck on the die bond film 3, 3 'of the dicing die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

At room temperature of the die-bonding films 3, 3 '(for example, 23 to 25 ° C.) breaking energy per unit area in is preferably 5 J / mm ² or less, more preferably 4.5 J / mm ² or less, 4J / mm ² or less Particularly preferred. When the breaking energy of the die bond films 3 and 3 ′ is 5 J / mm ² or less, the die bond films 3 and 3 ′ can be suitably broken when the dicing die bond film 10 is expanded. In addition, from the viewpoint of cracking and handling properties of the die bond films 3 and 3 ′, the breaking energy is preferably 1 J / mm ² or more. The breaking energy was measured for a stress-strain curve of a sample having a width of 10 mm, a distance between chucks of 20 mm, and a thickness of 5 to 250 μm using a tensile tester at a tensile speed of 0.5 m / min. Is obtained from the lower area (see FIG. 9).

  Further, the elongation at break of the die bond films 3 and 3 ′ is 40% or more and 500% or less, preferably 40 to 480%. By making the die bond film 3, 3 ′ elongation at break 40% or more, the die bond film 3, 3 ′ is prevented from being cracked and the like, and the handling property is improved, and the semiconductor wafer is divided and the die bond film 3, 3 'breaks can be made simultaneously. On the other hand, by setting the elongation at break to 500% or less, it is possible to prevent only the semiconductor wafer from being divided and the die bond films 3, 3 'from being broken. The elongation at break is obtained by (((distance between chucks at break (mm)) − 20) / 20) × 100.

  The glass transition temperature of the die bond films 3 and 3 ′ temporarily bonded to the semiconductor wafer is preferably within a range of −20 to 60 ° C., more preferably within a range of 0 to 50 ° C., and within a range of 20 to 50 ° C. Particularly preferred. By setting the glass transition temperature to −20 ° C. or higher, the adhesion to the semiconductor wafer when temporarily bonded to the semiconductor wafer can be improved. On the other hand, by making the glass transition temperature 60 ° C. or lower, it is possible to prevent the breakability of the die bond film from being lowered when the dicing die bond films 10 and 12 are expanded. The glass transition temperature was determined by cutting the die-bonding films 3 and 3 ′ into a strip shape having a thickness of 200 μm, a width of 10 mm, and a length of 40 mm with a cutter knife, and measuring the viscoelasticity (Rheometic Scientific, model: RSA-III). , Tanδ (E ″ (loss elastic modulus) / E when measured under the conditions of a frequency of 1.0 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min in a temperature range of 50 ° C. to 300 ° C. '(Storage modulus)) is the temperature at which the maximum value is reached.

  The tensile storage modulus at −20 to 30 ° C. before thermosetting of the die bond films 3 and 3 ′ is preferably 0.1 to 10 GPa, and more preferably 0.5 to 9.5 GPa. When the semiconductor wafer 4 is divided by the division line 4L (see FIG. 3) after irradiation with laser light by setting the tensile storage modulus at −20 to 30 ° C. before thermosetting to 0.1 to 10 GPa. The occurrence of chipping can be prevented. Further, it is possible to prevent the position shift of the semiconductor chip 5 and the chip skip when the line is divided along the planned division line 4L.

  The thickness of the dicing die bond films 10 and 11 is not particularly limited, but is usually preferably in the range of 11 to 200 μm, more preferably in the range of 15 to 100 μm, and particularly preferably in the range of 20 to 80 μm.

The dicing die bond films 10 and 11 according to the present embodiment are produced as follows, for example.
First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, after a pressure-sensitive adhesive composition solution is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary), and the pressure-sensitive adhesive layer 2 is formed. Form. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing film 11 is produced.

The die bond films 3 and 3 ′ are produced, for example, as follows.
First, an adhesive composition solution which is a material for forming the dicing die bond films 3 and 3 ′ is prepared. As described above, the adhesive composition solution contains the adhesive composition, filler, and other various additives.

  Next, the adhesive composition solution is applied onto the base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form an adhesive layer. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition solution on a separator and forming a coating film, you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator.

  Subsequently, the separator is peeled off from each of the dicing film 11 and the adhesive layer, and the adhesive layer and the pressure-sensitive adhesive layer are bonded to each other so as to be a bonding surface. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the base material separator on the adhesive layer is peeled off, and the dicing die-bonding film according to the present embodiment is obtained.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using the dicing die bond film 12 will be described with reference to FIGS. The semiconductor manufacturing method according to the present embodiment includes a preprocessing step for performing preprocessing on the semiconductor wafer 4 so that the semiconductor wafer 4 can be easily divided later on the planned dividing line 4L, and dicing the semiconductor wafer 4 after the preprocessing. The semiconductor wafer 4 and the die bond film 3 ′ constituting the dicing die bond film 12 are broken at the division line 4L by applying a tensile tension to the dicing die bond film 12 and a mounting step for bonding to the die bond film 12. An expanding process for forming the semiconductor chip 5, a pick-up process for picking up the semiconductor chip 5 adhered and fixed to the dicing die-bonding film 12, and the picked-up semiconductor chip 5 on the adherend 6 via the die-bonding film 3 '. Die-bonding temporary fixing step and after the temporary fixing step A wire bonding step of performing wire bonding to the semiconductor chip 5, the semiconductor chip 5 which is wire-bonded by the wire bonding step, and a sealing step of sealing with a sealing resin 8.

3 to 6 are schematic cross-sectional views for explaining one method of manufacturing the semiconductor device according to this embodiment. First, the semiconductor wafer 4 is subjected to pre-processing that enables easy division later on the planned division line 4L (pre-processing step). As this step, as shown in FIG. 3, a method of forming a modified region on the planned division line 4 </ b> L by irradiating a laser beam can be mentioned. This method is a method of aligning a condensing point inside a semiconductor wafer, irradiating a laser beam along a grid-like division planned line, and forming a modified region inside the semiconductor wafer by ablation by multiphoton absorption. . What is necessary is just to adjust suitably within the range of the following conditions as laser beam irradiation conditions.
<Laser irradiation conditions>
(A) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repeat frequency 100 kHz or less
Pulse width 1μs or less
Output 1mJ or less
Laser light quality TEM00
Polarization characteristics Linearly polarized (B) condensing lens
Magnification 100 times or less
NA 0.55
Transmittance with respect to laser beam wavelength: 100% or less (C) Moving speed of placing table on which semiconductor substrate is placed 280 mm / sec or less Note that a method of forming a modified region on the planned division line 4L by irradiating laser beam Is described in detail in Japanese Patent No. 3408805 and Japanese Patent Application Laid-Open No. 2003-338567, and detailed description thereof will be omitted here.

  Next, as shown in FIG. 4, the pretreated semiconductor wafer 4 is pressure-bonded onto the die-bonding film 3 ', and this is bonded and held (fixing step). This step is performed while pressing with a pressing means such as a pressure roll. The attaching temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80 ° C. By setting the affixing temperature within the above numerical range, warping of the semiconductor wafer 4 can be effectively prevented and the influence of expansion and contraction of the dicing die bond film can be reduced. Moreover, although the pressure in the case of sticking is not specifically limited, It is preferable to exist in the range of 0.1-0.3 MPa, and it is more preferable to exist in the range of 0.15-0.2 MPa.

  Next, by applying a tensile tension to the dicing die bond film 12, the semiconductor wafer 4 and the die bond film 3 'are broken to form the semiconductor chip 5 (expanding process). In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 5A, a dicing ring 31 is attached to the periphery of the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 12 to which the semiconductor wafer 4 is bonded, and then the wafer expansion device 32 is attached. Fix it. Next, as shown in FIG. 5B, the push-up portion 33 is raised to apply tension to the dicing die-bonding film 12.

  At this time, the expanding speed (speed at which the push-up portion rises) is preferably 10 to 1000 mm / second, more preferably 50 to 750 mm / second, and particularly preferably 100 to 600 mm / second. By setting the expanding speed to 10 mm / second or more, the semiconductor wafer 4 can be divided and the die bond film 3 ′ can be easily and substantially simultaneously broken. Moreover, it can prevent that the dicing film 11 fractures | ruptures by making an expanding speed | rate into 1000 mm / sec or less.

  Moreover, it is preferable that it is 5-50 mm, the expansion amount (height which the pushing-up part rose) is more preferable, it is 5-40 mm, and it is especially preferable that it is 5-30 mm. By setting the amount of expansion to 5 mm or more, the semiconductor wafer 4 can be divided and the die bond film 3 can be easily broken. Moreover, it can prevent that the dicing film 11 fractures | ruptures by making expand amount into 50 mm or less.

  Further, the expansion temperature may be adjusted between −50 and 100 ° C. as necessary, but in the present invention, it is preferably −20 to 30 ° C., and more preferably −10 to 25 ° C. preferable. Since the die bond film has a lower elongation at break and is more likely to break, the expand temperature is preferably lower in terms of preventing yield loss due to defective breakage of the die bond film.

  In this way, by applying tensile tension to the dicing die bond film 12, cracks are generated in the thickness direction of the semiconductor wafer 4 starting from the modified region of the semiconductor wafer 4, and the die bond film 3 that is in close contact with the semiconductor wafer 4. 'Can be broken, and the semiconductor chip 5 with the die bond film 3' can be obtained.

  Next, in order to peel off the semiconductor chip 5 adhered and fixed to the dicing die bond film 12, the semiconductor chip 5 is picked up (pickup process). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing die bond film 12 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.

  Here, since the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the die-bonding film 3 'of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

  Next, as shown in FIG. 6, the picked-up semiconductor chip 5 is die-bonded to the adherend 6 via the die-bonding film 3 '(temporary fixing step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

  The shear adhesive strength at 25 ° C. at the time of temporarily fixing the die bond film 3 ′ is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa with respect to the adherend 6. When the shear bond strength of the die bond film 3 is at least 0.2 MPa or more, the die bond film 3 and the semiconductor chip 5 or the adherend 6 are bonded by ultrasonic vibration or heating in the wire bonding process. Less shear deformation occurs on the adhesive surface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing. Moreover, it is preferable that the shear adhesive force at 175 degreeC at the time of temporary adhering of die-bonding film 3 'is 0.01 Mpa or more with respect to the to-be-adhered body 6, More preferably, it is 0.01-5 Mpa.

  Next, wire bonding is performed in which the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by the bonding wire 7 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and crimping energy by applying pressure while being heated so as to be within the temperature range. This step can be performed without performing thermosetting of the die bond film 3a. Further, the semiconductor chip 5 and the adherend 6 are not fixed by the die bond film 3a in the course of this step.

  Next, the semiconductor chip 5 is sealed with the sealing resin 8 (sealing step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. Thereby, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed through the die bond film 3. That is, in the present invention, even when the post-curing step described later is not performed, the die bonding film 3 can be fixed in this step, and the number of manufacturing steps can be reduced and the semiconductor device manufacturing period can be reduced. It can contribute to shortening.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even if the die bond film 3a is not completely thermoset in the sealing step, the die bond film 3a can be completely thermoset together with the sealing resin 8 in this step. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  In the embodiment described above, the case where the wire bonding process is performed without temporarily curing the die bond film 3 ′ after temporarily fixing the semiconductor chip 5 with the die bond film 3 ′ to the adherend 6 has been described. However, in the present invention, after the semiconductor chip 5 with the die bond film 3 ′ is temporarily fixed to the adherend 6, the die bond film 3 ′ is thermally cured, and then a normal die bond process is performed in which a wire bonding process is performed. It is good as well. In this case, it is preferable that the die-bonding film 3 ′ after thermosetting has a shear adhesive force of 0.01 MPa or more at 175 ° C., and more preferably 0.01 to 5 MPa. By setting the shear adhesive strength at 175 ° C. after thermosetting to 0.01 MPa or more, the die bond film 3 ′ and the semiconductor chip 5 or the adherend 6 are caused by ultrasonic vibration or heating in the wire bonding step. This is because it is possible to prevent shear deformation from occurring on the adhesive surface.

  In addition, the dicing die-bonding film of this invention can be used suitably also when laminating | stacking a several semiconductor chip and carrying out three-dimensional mounting. At this time, the die bond film and the spacer may be laminated between the semiconductor chips, or only the die bond film may be laminated between the semiconductor chips without laminating the spacers. Is possible.

  In the above-described embodiment, the method of forming the modified region on the division planned line 4L by irradiating the laser beam as the pretreatment process has been described. However, in the present invention, as a pretreatment step, a step of forming grooves on the surface of the semiconductor wafer and then performing backside grinding may be employed. Therefore, a manufacturing method of the semiconductor device in this case will be described below.

  7 and 8 are schematic cross-sectional views for explaining another method for manufacturing the semiconductor device according to the present embodiment. First, as shown in FIG. 7A, a groove 4 </ b> S that does not reach the back surface 4 </ b> R is formed on the front surface 4 </ b> F of the semiconductor wafer 4 by the rotating blade 41. When forming the grooves 4S, the semiconductor wafer 4 is supported by a support base (not shown) (for example, a dicing film). The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 and the expanding conditions. Next, as shown in FIG. 7B, the semiconductor wafer 4 is supported on the protective base material 42 so that the surface 4F comes into contact therewith. Thereafter, back grinding is performed with the grinding wheel 45 to expose the groove 4S from the back surface 4R. Thereby, the semiconductor chip 5 is formed. In addition, a conventionally well-known sticking apparatus can be used for affixing the protective base material 42 to a semiconductor wafer, and a conventionally well-known grinding apparatus can also be used for back surface grinding. The above is the pretreatment process.

  Next, as shown in FIG. 8, the pre-processed semiconductor chip 5 is pressure-bonded onto the die bond film 3 ', and this is bonded and held (fixed step). Thereafter, the protective substrate 42 is peeled off, and an expanding process is performed. This expanding step may be the same as the case where the modified region is formed on the division planned line 4L by irradiating the laser beam. Since the subsequent steps are the same as the case where the modified region is formed on the division planned line 4L by irradiating the laser beam, the description here will be omitted.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. The present invention is not limited to these examples.

Example 1
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (JER Corporation, Epicoat 1004, melting point 97 ° C.) 113 parts by weight (b) Phenolic resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 121 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 37 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film A having a thickness of 40 μm was produced.

(Example 2)
In Example 2, a die bond film B according to this example was produced in the same manner as in Example 1 except that the amount of spherical silica (d) was changed to 222 parts by weight. .

(Example 3)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (JER Co., Ltd., Epicoat 1001, melting point 64 ° C.) 32 parts by weight (b) Phenolic resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 34 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 18 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film C having a thickness of 40 μm was produced.

Example 4
In Example 4, a die bond film D according to this example was produced in the same manner as in Example 3 except that the blending amount of the spherical silica (d) was changed to 110 parts by weight. .

(Example 5)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (manufactured by JER, YL-980, liquid at room temperature) 113 parts by weight (b) Phenolic resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 121 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 37 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film E having a thickness of 40 μm was produced.

(Example 6)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (JER Corporation, Epicoat 1004, melting point 97 ° C.) 113 parts by weight (b) Phenolic resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 121 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 501 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film F having a thickness of 40 μm was produced.

(Comparative Example 1)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (JER Corporation, Epicoat 1004, melting point 97 ° C.) 11 parts by weight (b) Phenolic resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 13 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 1287 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a die bond film G having a thickness of 40 μm was produced.

(Comparative Example 2)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (manufactured by JER Corporation, Epicoat 827, liquid at room temperature) 917 parts by weight (b) Phenol resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 983 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 1333 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film H having a thickness of 40 μm was produced.

(Comparative Example 3)
The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.
(A) Epoxy resin (manufactured by JER Corporation, Epicoat 827, liquid at room temperature) 11 parts by weight (b) Phenol resin (Mitsui Chemicals, Millex XLC-4L, melting point 59 ° C.) 13 parts by weight (c) Acrylic acid ester-based polymer based on ethyl acrylate-methyl methacrylate (manufactured by Nagase ChemteX Corp., SG-708-6) 100 parts by weight (d) spherical silica as a filler (manufactured by Admatex Corp.) SO-25R) 7 parts by weight

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film I having a thickness of 40 μm was produced.

(Measurement of glass transition temperature (Tg))
The die bond films A to I produced in each of the examples and comparative examples were cut out with a cutter knife into strips each having a thickness of 200 μm, a width of 10 mm, and a length of 40 mm. Next, using a viscoelasticity measuring apparatus (Rheometic Scientific, model: RSA-III), a frequency of 1.0 Hz, a strain of 0.1%, and a heating rate of 10 ° C./min in a temperature range of 50 ° C. to 300 ° C. Tan δ (E ″ (loss elastic modulus) / E ′ (storage elastic modulus)) measured under the above conditions is a temperature at which the maximum value is obtained.

About the die-bonding films AI produced in each Example and Comparative Example, the elongation at break at 25 ° C. before thermosetting was measured as follows. That is, each die-bonding film A to I was cut out with a cutter knife into strips each having a width of 10 mm, a length of 30 mm, and a thickness of 40 μm. Next, using a tensile tester (manufactured by Shimadzu Corporation, trade name: Tensilon), a tensile test was performed at a distance between chucks of 20 mm and a tensile speed of 0.5 m / min, and the elongation at break was determined by the following formula.
Elongation at break (%) = (((Distance between chucks at break (mm)) − 20) / 20) × 100

(Measurement of shear adhesion between dicing film and die bond film)
The shear adhesive force between the die bond films A to I and the dicing film produced in the examples and comparative examples was measured as follows.
First, the die bond films A to I were attached to a dicing film (manufactured by Nitto Denko Corporation, trade name: V-12S) using a laminator. The pasting conditions were a stage temperature of 60 ° C. during pasting, a pasting speed of 10 mm / sec, and a pasting pressure of 0.15 MPa.

  Next, a semiconductor wafer (thickness 0.5 mm) was stuck on the die bond film stuck on each dicing tape using a laminator. The pasting conditions were a stage temperature of 60 ° C. during pasting, a pasting speed of 10 mm / sec, and a pasting pressure of 0.15 MPa.

  Thereafter, the semiconductor wafer was diced so that the chip size was 5 mm × 5 mm, and the semiconductor chips around the semiconductor chip to be measured were removed. Subsequently, the shear adhesive force between the dicing film and the die bond film was measured for the semiconductor chip to be measured. Measurement conditions were a bond tester (Dagy, # 4000), a stage temperature of 23 ° C., a head height of 100 μm, and a speed of 0.5 mm / sec. Moreover, the measurement was performed in the state which does not perform the heat processing for the thermosetting of a die-bonding film. The results are shown in Table 1 below.

(Measurement of shear adhesion between die bond film and semiconductor wafer)
The shear adhesive force between the die bond films A to I and the semiconductor wafer produced in the examples and comparative examples was measured as follows.
First, each die-bonding film was affixed to a semiconductor element (length 5 mm × width 5 mm × thickness 0.5 mm) using a laminator. The affixing conditions were a temperature of 60 ° C., a laminating speed of 10 mm / sec, and a pressure of 0.15 MPa. Furthermore, the said semiconductor element was affixed on the other semiconductor element (10 mm long x 10 mm wide x 0.5 mm thickness) through the die-bonding film. The affixing conditions were a temperature of 60 ° C., a laminating speed of 10 mm / sec, and a pressure of 0.15 MPa.

  Next, a die bond film is used under the conditions of a stage temperature of 23 ° C., a head height of 100 μm, and a speed of 0.5 mm / sec using a bond tester (Dagy, # 4000) without thermosetting the die bond film. The shear adhesion force between the semiconductor device and the semiconductor device was measured. The results are shown in Table 1 below. Since the value of the obtained shear adhesive force can be regarded as the shear adhesive force between the semiconductor wafer and the die bond film, the measured value was taken as the shear adhesive force between the semiconductor wafer and the die bond film.

(State of expanded semiconductor wafer and die bond film)
Regarding the state after expansion between the die bond films A to I and the semiconductor wafer produced in the above-mentioned examples and comparative examples, as a pre-processing step for the semiconductor wafer, the laser beam is irradiated to improve the state on the division planned line 4L. It confirmed about each of the case where the process (process 1) which forms a quality area | region is employ | adopted, and the case where a groove | channel is formed in the surface of a semiconductor wafer and the process (process 2) which performs back surface grinding is employ | adopted after that. The mounting conditions of the semiconductor wafer on each of the die bond films A to I were a temperature of 60 ° C., a laminating speed of 10 mm / sec, and a pressure of 0.15 MPa.

<When a process (process 1) of forming a modified region on the planned division line 4L by irradiating laser light as a pretreatment process>
Using ML300-Integration, manufactured by Tokyo Seimitsu Co., Ltd. as the laser processing device, the condensing point is aligned inside the semiconductor wafer, and laser light is emitted from the surface side of the semiconductor wafer along the grid-like (10 mm × 10 mm) division line. Irradiated to form a modified region inside the semiconductor wafer. A silicon wafer (thickness 75 μm, outer diameter 12 inches) was used as the semiconductor wafer. The laser light irradiation conditions were as follows.

(A) Semiconductor wafer
Silicon wafer (thickness 75μm, outer diameter 12 inches)
(B) Laser light
Laser light source Semiconductor laser pumped Nd: YAG laser
Wavelength 1064nm
Laser light spot cross-sectional area 3.14 × 10 ⁻⁸ cm ²
Oscillation form Q switch pulse
Repetition frequency 100kHz
Pulse width 30ns
Output 20μJ / pulse
Laser light quality TEM00 40
Polarization characteristics Linearly polarized (B) condensing lens
50 times magnification
NA 0.55
60% transmittance for laser wavelength
(C) Moving speed of the table on which the semiconductor substrate is placed 100 mm / second

  After bonding the semiconductor wafer which performed the pre-processing by the laser beam to each of die-bonding films A-I, the fracture test was done. The expanding conditions in the break test were room temperature (25 ° C.), an expanding speed of 300 mm / second, and an expanding amount of 30 mm. After the expansion, the semiconductor wafer from which the die bond film was not peeled was marked with ◯, and the peeled wafer was marked with x. The results are shown in Table 1 below.

<When a step (step 2) in which grooves are formed on the surface of the semiconductor wafer and then back grinding is adopted as the pretreatment step>
A grid-shaped (10 mm × 10 mm) cut groove was formed on a semiconductor wafer (thickness 500 μm, outer diameter 12 inches) by blade dicing. The depth of the cut groove was 100 μm.
Next, the surface of this semiconductor wafer was protected with a protective tape, and back surface grinding was performed until the thickness became 75 μm, thereby obtaining individual semiconductor chips (10 mm × 10 mm × 75 μm) divided. After bonding this to each of the die bond films A to I, a break test was performed. The expanding conditions in the break test were room temperature (25 ° C.), an expanding speed of 300 mm / second, and an expanding amount of 30 mm. After the expansion, the semiconductor wafer from which the die bond film was not peeled was marked with ◯, and the peeled wafer was marked with x. The results are shown in Table 1 below.

(Die bond film and dicing film after expansion)
About the state after the expansion between the die bond films A to I and the dicing film produced in the above-mentioned examples and comparative examples, as a pretreatment process for the semiconductor wafer, the laser beam is irradiated and the line is divided onto the planned division line 4L. It confirmed about each of the case where the process (process 1) which forms a quality area | region is employ | adopted, and the case where a groove | channel is formed in the surface of a semiconductor wafer and the process (process 2) which performs back surface grinding is employ | adopted after that.

  The mounting of the semiconductor wafer on the die bond films A to I was performed after pasting dicing films (manufactured by Nitto Denko Corporation, trade name: V-12S) on the die bond films A to I in advance. The mounting conditions were a temperature of 60 ° C., a laminating speed of 10 mm / sec, and a pressure of 0.15 MPa. Moreover, about the detail of the process 1 and the process 2, it was made to be the same as that of the case where the state of the expanded semiconductor wafer and the die-bonding film is observed. After the expansion, those that did not peel between the dicing film and the die-bonding film were marked with ◯, and those that peeled off were marked with ×. The results are shown in Table 1 below.

(Confirmation of breakage)
Regarding the determinability when the die bond films A to I produced in the examples and comparative examples are attached to a semiconductor wafer and the die bond films A to I are expanded, laser light is used as a pretreatment step for the semiconductor wafer. When the process of forming the modified region on the division line 4L by irradiation (process 1) is adopted, and the process of forming the groove on the surface of the semiconductor wafer and then grinding the back surface (process 2) is adopted. Confirmed for each of the cases.

  The mounting of the semiconductor wafer on the die bond films A to I was performed after pasting dicing films (manufactured by Nitto Denko Corporation, trade name: V-12S) on the die bond films A to I in advance. The mounting conditions were a temperature of 60 ° C., a laminating speed of 10 mm / sec, and a pressure of 0.15 MPa. Moreover, about the detail of the process 1 and the process 2, it was made to be the same as that of the case where the state of the expanded semiconductor wafer and the die-bonding film is observed. After the expansion, whether or not the semiconductor chip with the die bond film was divided was observed with an optical microscope. A case where all the semiconductor chips were divided by 100% was marked with ◯, and a case where even one was not divided was marked with x. The results are shown in Table 1 below.

(result)
As is clear from Table 1 below, in the die bond films A to F according to Examples 1 to 6, the adhesiveness with the semiconductor wafer and the dicing film after the expansion is good, and it is confirmed that peeling or misalignment occurs. Was not. Moreover, it was confirmed that each die-bonding film was broken well along with the division of the semiconductor wafer, and a semiconductor chip with a die-bonding film was obtained with good yield. On the other hand, in the die-bonding film G according to Comparative Example 1, the shear adhesive force between the semiconductor wafer and the dicing film was too small, and as a result, peeling and misalignment occurred during expansion. Furthermore, the die bond film could not be broken along with the division of the semiconductor wafer. In addition, in the die bond films H and I according to Comparative Examples 2 and 3, the occurrence of peeling or the like was not observed between the semiconductor wafer and the dicing film during the expansion, but the die bond film was removed along with the division of the semiconductor wafer. It could not be broken.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 'Die bond film 4 Semiconductor wafer 5 Semiconductor chip 6 Substrate 7 Bonding wire 8 Sealing resin 10, 12 Dicing die bond film 11 Dicing film 31 Dicing ring 32 Wafer expansion apparatus 41 Rotating blade 42 Protective substrate 45 Grinding wheel

Claims (5)

A die-bonding film that is provided on the pressure-sensitive adhesive layer of a dicing film provided with at least a pressure-sensitive adhesive layer on a substrate to form a dicing die-bonding film,
The dicing die bond film formed by using the die bond film is bonded to a semiconductor wafer on which processing capable of being divided into a plurality of semiconductor chips by applying tensile tension is applied to the die bond film. By expanding the film, it is possible to break the die bond film and divide the semiconductor chip,
The shear adhesive force at 25 ° C. when the semiconductor wafer is temporarily bonded to the die bond film is τ ₁ (MPa), and the shear adhesive force at 25 ° C. when the dicing film is bonded to the die bond film is τ ₂ (MPa). , Τ ₁ is in the range of 6-30 MPa, τ ₂ is in the range of 0.5-3 MPa, and (τ ₁ -τ ₂ ) is 4 or more,
A die bond film having an elongation at break of 40 to 500%.   2. The die bond film according to claim 1, wherein a glass transition temperature of the die bond film temporarily bonded to the semiconductor wafer is in a range of −20 to 60 ° C. 3. It is formed by epoxy resin and phenol resin as thermosetting resin and acrylic resin as thermoplastic resin,
The X / (X + Y) when the total weight of the epoxy resin and the phenol resin is X parts by weight and the weight of the acrylic resin is Y parts by weight is 0.3 or more and less than 0.9. The die-bonding film as described in 2. It is formed by epoxy resin and phenol resin as thermosetting resin, acrylic resin as thermoplastic resin, and filler,
The B / (A + B) when the total weight of the epoxy resin, phenol resin and acrylic resin is A parts by weight and the weight of the filler is B parts by weight is 0.1 or more and 0.7 or less. 2. The die bond film according to 2. The die-bonding film according to claim 3 or 4, wherein at least one of the epoxy resin or the phenol resin includes one or more kinds of resins having a melting point of 50 ° C or higher.

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