JP2006286740A5 - - Google Patents
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- JP2006286740A5 JP2006286740A5 JP2005101822A JP2005101822A JP2006286740A5 JP 2006286740 A5 JP2006286740 A5 JP 2006286740A5 JP 2005101822 A JP2005101822 A JP 2005101822A JP 2005101822 A JP2005101822 A JP 2005101822A JP 2006286740 A5 JP2006286740 A5 JP 2006286740A5
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- JP
- Japan
- Prior art keywords
- gan
- layer
- semiconductor device
- semiconductor layer
- gate electrode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 11
- 229910002601 GaN Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 229910017083 AlN Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 229950008597 drug INN Drugs 0.000 claims 1
Claims (5)
- 基板と、
該基板上に形成されたＧａＮ系半導体層と、
該ＧａＮ系半導体層上に埋め込まれ形成されたゲート電極と、
該ゲート電極の両側に形成されたソース電極およびドレイン電極と、
前記ゲート電極と前記ソース電極の間に形成された第１のリセス部と、
前記ゲート電極と前記ドレイン電極の間に形成された第２のリセス部と、を具備し、
前記第１のリセス部の深さが、前記第２のリセス部の深さより浅いことを特徴とする半導体装置。 - 前記ＧａＮ半導体層は、前記基板の（０００１）面に形成されたことを特徴とする請求項１記載の半導体装置。
- 前記ＧａＮ半導体層は、ＧａＮ、ＡｌＮおよびＩｎＮの少なくとも１つからなる結晶層または混晶層を含む層であることを特徴とする請求項１または２記載の半導体装置。
- 前記ＧａＮ系半導体層は、ＧａＮ電子走行層とＡｌＧａＮ電子供給層を含むことを特徴とする請求項３記載の半導体装置。
- 前記第２のリセス部と前記ドレイン電極の間に前記ＧａＮ系半導体層の凹部を具備すること特徴とする請求項１から４のいずれか一項記載の半導体装置。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005101822A JP5093991B2 (ja) | 2005-03-31 | 2005-03-31 | 半導体装置 |
| US11/392,516 US8044433B2 (en) | 2005-03-31 | 2006-03-30 | GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005101822A JP5093991B2 (ja) | 2005-03-31 | 2005-03-31 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006286740A JP2006286740A (ja) | 2006-10-19 |
| JP2006286740A5 true JP2006286740A5 (ja) | 2008-05-01 |
| JP5093991B2 JP5093991B2 (ja) | 2012-12-12 |
Family
ID=37069261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005101822A Expired - Fee Related JP5093991B2 (ja) | 2005-03-31 | 2005-03-31 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8044433B2 (ja) |
| JP (1) | JP5093991B2 (ja) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194588A (ja) * | 2005-12-20 | 2007-08-02 | Sony Corp | 電界効果トランジスタ及びこの電界効果トランジスタを備えた半導体装置並びに半導体装置の製造方法 |
| EP2040299A1 (en) * | 2007-09-12 | 2009-03-25 | Forschungsverbund Berlin e.V. | Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device |
| JP5555985B2 (ja) * | 2008-06-23 | 2014-07-23 | サンケン電気株式会社 | 半導体装置 |
| JP5564791B2 (ja) | 2008-12-26 | 2014-08-06 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP5577681B2 (ja) | 2009-11-30 | 2014-08-27 | 住友電気工業株式会社 | 半導体装置 |
| EP2562799A1 (en) * | 2010-04-22 | 2013-02-27 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing same |
| DE102010016993A1 (de) * | 2010-05-18 | 2011-11-24 | United Monolithic Semiconductors Gmbh | Halbleiter-Bauelement |
| JP5776143B2 (ja) | 2010-07-06 | 2015-09-09 | サンケン電気株式会社 | 半導体装置 |
| JP5747245B2 (ja) * | 2010-10-14 | 2015-07-08 | 国立研究開発法人物質・材料研究機構 | 電界効果トランジスタ及びその製造方法 |
| CN102064261B (zh) * | 2010-11-03 | 2012-09-05 | 中国科学院半导体研究所 | 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法 |
| JP2012109366A (ja) * | 2010-11-17 | 2012-06-07 | Sharp Corp | 窒化物半導体装置 |
| JP5801560B2 (ja) * | 2011-01-21 | 2015-10-28 | 株式会社豊田中央研究所 | 半導体装置 |
| JP5566937B2 (ja) * | 2011-03-28 | 2014-08-06 | 古河電気工業株式会社 | 窒化物系半導体デバイス及びその製造方法 |
| US8884308B2 (en) * | 2011-11-29 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor structure with improved breakdown voltage performance |
| JP5790461B2 (ja) * | 2011-12-07 | 2015-10-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| EP2608268B8 (en) * | 2011-12-19 | 2017-06-21 | Nexperia B.V. | Semiconductor device |
| JP5991000B2 (ja) * | 2012-04-23 | 2016-09-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| WO2013176905A1 (en) * | 2012-05-23 | 2013-11-28 | Hrl Laboratories, Llc | A high electron mobility field effect transistor and method of manufacturing the same |
| US9000484B2 (en) | 2012-05-23 | 2015-04-07 | Hrl Laboratories, Llc | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
| WO2013176904A1 (en) * | 2012-05-23 | 2013-11-28 | Hrl Laboratories, Llc | Hemt device and method of manufacturing the same |
| US8680536B2 (en) | 2012-05-23 | 2014-03-25 | Hrl Laboratories, Llc | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
| US10700201B2 (en) | 2012-05-23 | 2020-06-30 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
| US9379195B2 (en) * | 2012-05-23 | 2016-06-28 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
| US8981528B2 (en) * | 2012-11-16 | 2015-03-17 | Vishay General Semiconductor Llc | GaN-based Schottky diode having partially recessed anode |
| JP2016058681A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 半導体装置 |
| JP6332021B2 (ja) | 2014-12-26 | 2018-05-30 | 株式会社デンソー | 半導体装置 |
| US10177061B2 (en) | 2015-02-12 | 2019-01-08 | Infineon Technologies Austria Ag | Semiconductor device |
| JP6311668B2 (ja) | 2015-07-10 | 2018-04-18 | 株式会社デンソー | 半導体装置 |
| ITUB20155536A1 (it) * | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Transistore hemt di tipo normalmente spento includente una trincea contenente una regione di gate e formante almeno un gradino, e relativo procedimento di fabbricazione |
| WO2019090762A1 (zh) * | 2017-11-13 | 2019-05-16 | 吴展兴 | 半导体结构及其形成方法 |
| US10680092B2 (en) | 2018-10-01 | 2020-06-09 | Semiconductor Components Industries, Llc | Electronic device including a transistor with a non-uniform 2DEG |
| CN112133739B (zh) * | 2019-06-25 | 2024-05-07 | 联华电子股份有限公司 | 高电子迁移率晶体管和调整二维电子气体电子密度的方法 |
| JP7332548B2 (ja) * | 2020-08-06 | 2023-08-23 | 株式会社東芝 | 半導体装置 |
| US12218202B2 (en) * | 2021-09-16 | 2025-02-04 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
| CN117174749A (zh) | 2022-05-26 | 2023-12-05 | 联华电子股份有限公司 | 漏极具有阶梯状化合物层的高电子移动率晶体管 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2615585B2 (ja) * | 1987-01-29 | 1997-05-28 | 日本電気株式会社 | 砒化ガリウムトランジスタ |
| US5192987A (en) * | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
| JPH10178024A (ja) * | 1996-12-18 | 1998-06-30 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ及びその製造方法 |
| JP3127874B2 (ja) * | 1998-02-12 | 2001-01-29 | 日本電気株式会社 | 電界効果トランジスタ及びその製造方法 |
| JP3534624B2 (ja) * | 1998-05-01 | 2004-06-07 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| US6133593A (en) * | 1999-07-23 | 2000-10-17 | The United States Of America As Represented By The Secretary Of The Navy | Channel design to reduce impact ionization in heterostructure field-effect transistors |
| US6639255B2 (en) * | 1999-12-08 | 2003-10-28 | Matsushita Electric Industrial Co., Ltd. | GaN-based HFET having a surface-leakage reducing cap layer |
| DE20010743U1 (de) * | 2000-06-16 | 2000-10-12 | Westfalia Separator Food Tec GmbH, 59302 Oelde | Zentrifuge mit doppeltem Zulauf |
| JP4186032B2 (ja) * | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
| JP4022708B2 (ja) * | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | 半導体装置 |
| JP4220683B2 (ja) * | 2001-03-27 | 2009-02-04 | パナソニック株式会社 | 半導体装置 |
-
2005
- 2005-03-31 JP JP2005101822A patent/JP5093991B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-30 US US11/392,516 patent/US8044433B2/en not_active Expired - Fee Related
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