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JP2000077723A - 発光半導体を備えた半導体装置 - Google Patents

発光半導体を備えた半導体装置

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Publication number
JP2000077723A
JP2000077723A JP24190199A JP24190199A JP2000077723A JP 2000077723 A JP2000077723 A JP 2000077723A JP 24190199 A JP24190199 A JP 24190199A JP 24190199 A JP24190199 A JP 24190199A JP 2000077723 A JP2000077723 A JP 2000077723A
Authority
JP
Japan
Prior art keywords
semiconductor
light
fluorescent material
layer
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24190199A
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English (en)
Other versions
JP4562828B2 (ja
JP2000077723A5 (ja
Inventor
Christopher Haydn Lowery
クリストファー・ハイドン・ロウリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
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Publication of JP2000077723A publication Critical patent/JP2000077723A/ja
Publication of JP2000077723A5 publication Critical patent/JP2000077723A5/ja
Application granted granted Critical
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】 【課題】一定して均一な白色光を生じる白色光ＬＥＤを
得る。 【解決手段】透明スペーサによって、ＬＥＤを蛍光材料
から分離する。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、一般に、発光ダイ
オードに関するものであり、とりわけ、蛍光材料(fluor
escent material)を利用する発光ダイオードに関するも
のである。
【０００２】
【従来の技術】現在、青色の発光ダイオードすなわちＬ
ＥＤは、白色光を放出するＬＥＤデバイスを得るため、
蛍光材料と組み合わせて用いられている。白色光は、一
般に、波長が４００〜６００ナノメートル（ｎｍ）の範
囲にわたって均一であるが、赤色、青色、及び、緑色の
組み合わせとして生じる光は、やはり白色に見える。Ｌ
ＥＤにインジウム・ガリウム窒化物を用いることによっ
て、強い青色光を生じることが可能である。一般に、よ
り強度の低い赤色及び緑色光、及び、より強度の高い青
色光を発生する蛍光物質(phosphor)を用いることによっ
て、白色に見える強い光を発生することが可能である。
基本的に、４７０ｎｍの青色光の大部分は、蛍光材料中
の蛍光物質にぶつかって、アップシフトされ(up-shifte
d)、二次緑色及び赤色光が、蛍光物質を通って脱出する
残りの青色光を補うことになる。これによって、人間の
目に白色に見える光の最終的組み合わせが得られる。
【０００３】あいにく、青色ＬＥＤ上に層をなす蛍光材
料を利用する従来のアプローチでは、明るい白色の中心
部が、黄色の環状リング、それに続く青色の環状リン
グ、それに続く黄色の最終環状リングで包囲された、Ｌ
ＥＤが得られることが分かっている。これらの環状リン
グは、必ずしも、ＬＥＤ毎に予測可能に生じるとは限ら
ないので、比較的均一な白色光を生じるＬＥＤもあれ
ば、環状リングに変動を生じるＬＥＤもある。
【０００４】これらのリングの原因を確認するのは困難
であり、従って、この問題を解決する方法を決定するの
は困難であった。顧客は、白色からの偏差（逸脱）をＬ
ＥＤの欠陥とみなすので、品質管理において、多数のＬ
ＥＤを廃棄しなければならない。
【０００５】以上の問題は、ＬＥＤランプ並びに表面実
装(surface-mount)ＬＥＤ灯の両方に生じる。
【０００６】
【発明が解決しようとする課題】本発明の目的は、上述
の問題点を解決し、一定して均一な白色光ＬＥＤが得ら
れるようにすることにある。
【０００７】
【課題を解決するための手段】本半導体灯は、透明スペ
ーサによって被われた発光ダイオードを備えている。蛍
光材料がより均一に照明されて、一定して均一な白色光
ＬＥＤが得られるように、透明スペーサによって、ＬＥ
Ｄが蛍光材料から分離されている。これによって、黄色
及び／または青色光を放出する、白色半導体灯に関する
前者の問題が解消される。
【０００８】本発明の利点については、当該技術者に
は、添付の図面と関連づけて考察すれば、以下の詳細な
説明を読むことによって明らかになるであろう。
【０００９】
【発明の実施の形態】次に、図１（先行技術）を参照す
ると、発光ダイオード（ＬＥＤ）・ランプが示されてい
る。ＬＥＤランプ１０は、ＬＥＤランプ１０に電力を供
給する第１と第２の端子、または、リード・フレーム１
２及び１４を備えている。リード・フレーム１２は、Ｌ
ＥＤ１８が配置された凹型反射領域１６を備えている。
ＬＥＤは、透明なサファイア基板上のインジウムをドー
プした(indium-doped)窒化ガリウムのエピタキシャル層
から造られている。適正な順電圧での直流電流によって
作動させると、インジウムをドープした窒化ガリウムの
ＬＥＤの上部表面には、波長が約４７０ｎｍの青色光が
生じる。
【００１０】ＬＥＤ１８は、ワイヤ・ボンド２０によっ
てリード・フレーム１２に接続され、ワイヤ・ボンド２
２によってリード・フレーム１４に接続されている。Ｌ
ＥＤ１８上には蛍光材料２４の層が配置されている。蛍
光材料２４は、一般に、ＹＡＧ／Ｇｄ：Ｃｅ蛍光物質の
粒子を含む透明なエポキシ樹脂である。アセンブリ全体
が、透明なカプセル封止(encapsulation)エポキシ樹脂
２６に埋め込まれている。
【００１１】図１（先行技術）には、環状青色リングの
光線を表した矢印２８及び３０も示されている。矢印３
２及び３４は、外側環状リングの光線を表し、矢印３６
及び３８は、内側黄色環状リングを表している。
【００１２】次に図２（先行技術）を参照すると、ＬＥ
Ｄ１８を保持するカップを形成する反射部分１６を備え
た、リード・フレーム１２が示されている。薄い領域４
０及び４２とより厚い領域４４を備えた蛍光材料２４の
層が、さらに拡大して示されている。簡略化のため、最
終的なカプセル封止エポキシ樹脂２６は示されていな
い。
【００１３】次に図３を参照すると、ＬＥＤ１８を保持
するリフレクタ１６を備えたリード・フレーム１２が示
されている。先行技術と同様の部品は、同じ番号で示さ
れている。ＬＥＤ１８をカプセル封止する透明なスペー
サ５０が示されており、透明スペーサ５０よりある高さ
だけ上方に配置された蛍光材料５２が示されている。最
終的なカプセル封止エポキシ樹脂２６は、簡略化のため
示されていない。
【００１４】次に図４を参照すると、表面実装装置の装
置基板６２に配置された表面実装ＬＥＤ灯６０が示され
ている。ＬＥＤ６０が、透明スペーサ６４にカプセル封
止されており、透明スペーサ６４は、さらに、蛍光材料
の層６６及び最終的な透明カプセル封止層６８によって
被われている。
【００１５】動作時、図１のＬＥＤランプ１０（先行技
術）は、ＬＥＤのどの部分がｐ接合で、どの部分がｎ接
合であるかに従って、リード・フレーム１２または１４
に電力が給与される。電力が給与されると、ＬＥＤ１８
の上部は、強い青色光を放出する。領域４４に、適正な
厚さの蛍光材料が与えられると、約４７０ｎｍの青色光
と、それぞれ、５００ｎｍと５５０ｎｍの緑色及び赤色
蛍光が適正に組み合わせられて、白色光が生じることに
なる。
【００１６】図２（先行技術）に示す領域４０及び４２
において、蛍光材料の層が比較的薄い場合、蛍光物質か
らの光の影響が不十分であるため、青色光は、一般に、
光線のライン２８及び３０に沿って青色環状リングを生
じることになる。環状青色リングの内側及び外側には、
光線３２及び３４と光線３６及び３８による黄色環状リ
ングが生じるが、この場合、蛍光物質は光の一部に影響
を及ぼすものの、均一な白色光を生じさせるには不十分
である。
【００１７】ＬＥＤ１８上の材料２４の表面張力によっ
て、ＬＥＤ１８のコーナに近い領域４０及び４２の厚さ
から、ＬＥＤの中心の上方における領域４４の厚さに及
ぶ、さまざまな厚さの領域が生じる。この結果、青色光
の不均一な再放射及び前述の環状リングが生じる。これ
は、蛍光材料２４の層が、ＬＥＤ１８の上及びまわりに
配置されている場合に固有のように思われる。
【００１８】図３に示す本発明の場合、ＬＥＤ１８の上
及びまわりに透明スペーサ５０を堆積させ、ＬＥＤ１８
からほぼ均一な厚さの蛍光材料の層５２を分離すること
によって、環状リングが排除されることが確認された。
また、蛍光材料の層５２がＬＥＤの上方で均一な厚さに
なるように、透明スペーサ５０とＬＥＤ１８の上部をち
ょうど同じ高さにすることも可能であり、これによっ
て、やはりこの問題が解消されることが確認されてい
る。しかし、この後者のアプローチは、円錐状反射領域
１６によって形成されるカップにおける透明スペーサ５
０のより慎重な体積配分が必要とされる。
【００１９】図４に示す表面実装ＬＥＤ灯の場合、表面
張力（ＬＥＤ１８のサイズでは、重力に比べて大きい）
と粘性の組み合わせを利用して、半球形一杯分の透明な
紫外線（ＵＶ）硬化樹脂をＬＥＤ１８の上に滴下させ、
透明スペーサ６０を形成することが可能である。この樹
脂は、全てのコーナを被覆し、その後、ＵＶ光を利用し
て硬化させられる。これに、やはり、粘性のＵＶ硬化樹
脂である、蛍光材料の層６６が後続する。透明スペーサ
６４の堆積によって、液滴としての半球が生じ、次に、
蛍光材料の層６６が流れて、透明スペーサ６４の半球形
状と同じ形状になり、最終カプセル封止６８及び硬化の
前に、硬化する。蛍光材料の層６６は、厚さが均一にな
るので、環状リングの問題は生じない。
【００２０】熱硬化性による粘性が通常の滴下では、小
さいサイズにもかかわらず、ほとんどの樹脂、通常エポ
キシ、がＬＥＤ１８から流れ出てしまうので、ＵＶ硬化
のような高速硬化を行うことが必要になる。その後で、
最終カプセル封止層６８を堆積させることが可能にな
る。
【００２１】特定の最良の態様に関連して、本発明の解
説を行ってきたが、もちろん、当該技術者には、以上の
説明に鑑みて、多くの代替、修正、及び、変更案が明ら
かになるであろう。従って、それは、付属の請求項の精
神及び範囲内にあるこうした全ての代替、修正、及び、
変更案を包含することを意図したものである。本明細書
に記載され、添付の図面に示された全ての事項は、例証
を意味するものであって、制限を意味するものではない
と解釈すべきである。
【００２２】以上、本発明の実施例について詳述した
が、以下、本発明の各実施態様の例を示す。
【００２３】（実施態様１）半導体装置であって、発光
半導体（１８、６０）と、前記発光半導体（１８、６
０）のまわりに配置された透明スペーサ（５０、６４）
と、前記発光半導体（１８、６０）及び前記透明スペー
サ（５０、６４）の上に配置された蛍光材料を含む層
（５２、６６）と、前記発光半導体（１８、６０）に接
続されて、前記発光半導体に付勢し、発光させる入力端
子（１２、１４、６２）とを有する半導体装置。
【００２４】（実施態様２）前記透明スペーサ（５０、
６４）が、前記発光半導体（１８、６０）の上に配置さ
れることと、前記蛍光材料を含む層（５２、６６）が、
前記透明スペーサ（５０、６４）によって、前記発光半
導体（１８、６０）から間隔をあけて配置されることを
特徴とする、実施態様１に記載の半導体装置。
【００２５】（実施態様３）前記蛍光材料を含む層（６
６、５２）の上に配置された保護層（６８、２６）が含
まれることを特徴とする、実施態様１に記載の半導体装
置。
【００２６】（実施態様４）前記入力端子（１２）の１
つが、前記発光半導体（１８）のリフレクタ（１６）を
形成することを特徴とする、実施態様１に記載の半導体
装置。
【００２７】（実施態様５）前記発光半導体（１８、６
０）が、前記蛍光材料を含む層（５２、６６）によって
部分的に別の波長に変換され、所定の波長の光を放出す
ることを特徴とする、実施態様１に記載の半導体装置。
【００２８】（実施態様６）前記発光半導体（１８、６
０）が、青色光を放出することと、前記蛍光材料を含む
層（５２、６６）に、前記青色光の大部分に反応して、
前記青色光の残りの部分と結合可能な光を発生し、それ
によって白色光が得られるようにする蛍光物質が含まれ
ていることとを特徴とする実施態様１に記載の半導体装
置。
【００２９】（実施態様７）半導体装置であって、発光
ダイオードと、前記発光ダイオードのまわりに配置され
た透明なカプセル封止樹脂と、前記発光ダイオード及び
前記透明なカプセル封止樹脂の上に配置された蛍光材料
を含む樹脂と、前記発光ダイオードに接続されて、前記
発光ダイオードに付勢し、発光させる入力端子とを有す
る半導体装置。
【００３０】（実施態様８）前記透明なカプセル封止樹
脂が、前記発光ダイオードの上に配置されることと、前
記蛍光材料を含む前記樹脂が、前記透明なカプセル封止
樹脂によって、前記発光ダイオードから間隔をあけて配
置されることと、前記蛍光材料を含む前記樹脂が、ほぼ
均一な厚さであることとを特徴とする、実施態様７に記
載の半導体装置。
【００３１】（実施態様９）前記蛍光材料を含む前記樹
脂の上に配置された保護樹脂層が含まれることを特徴と
する、実施態様７に記載の半導体装置。
【００３２】（実施態様１０）前記入力端子の１つが、
前記発光ダイオード用のリフレクタ、及び、前記樹脂用
のカップを形成することを特徴とする、実施態様７に記
載の半導体装置。
【００３３】（実施態様１１）前記発光ダイオードを配
置し、前記樹脂を滴下した装置基板が含まれていること
を特徴とする、実施態様７に記載の半導体装置。
【００３４】（実施態様１２）前記発光ダイオードが、
前記蛍光材料によって部分的に別の波長に変換されて、
均一な白色光を生じることになる、所定の波長の光を放
出することを特徴とする、実施態様７に記載の半導体装
置。
【００３５】（実施態様１３）前記発光ダイオードが、
青色光を放出することと、前記蛍光材料に、前記青色光
に反応して、緑色光を生じる第１の蛍光物質と、前記青
色光に反応して、赤色光を生じる第２の蛍光物質が含ま
れていることと、前記蛍光材料が、それを通る前記青色
光、及び、それから放出される前記赤色及び前記緑色光
から白に見える光を生じることを特徴とする、実施態様
７に記載の半導体装置。
【００３６】（実施態様１４）半導体装置であって、サ
ファイア基板と、前記サファイア層の上に配置されて、
発光ダイオードを形成する、インジウムをドープした窒
化ガリウムのエピタキシャル層と、前記サファイア基板
のまわりに配置された透明なカプセル封止樹脂と、前記
エピタキシャル層の上に配置される樹脂及び前記透明な
カプセル封止樹脂を含むＹＡＧ／Ｇｄ：Ｃｅ蛍光物質
と、前記エピタキシャル層に接続されて、前記エピタキ
シャル層に付勢し、光を放出させる入力端子が含まれて
いる、半導体装置。
【００３７】（実施態様１５）前記透明なカプセル封止
樹脂が、前記エピタキシャル層の上に配置され、樹脂を
含む前記蛍光物質が、前記透明なカプセル封止樹脂によ
って前記エピタキシャル層から間隔をあけて配置される
ことを特徴とする、実施態様１４に記載の半導体装置。
【００３８】（実施態様１６）前記蛍光物質を含む樹脂
の上に配置された保護層が含まれることを特徴とする、
実施態様１４に記載の半導体装置。
【００３９】（実施態様１７）前記入力端子の１つが、
前記サファイア基板上において前記エピタキシャル層用
のリフレクタを形成することを特徴とする、実施態様１
４に記載の半導体装置。
【００４０】（実施態様１８）前記サファイア基板を配
置した装置基板が含まれることを特徴とする、実施態様
１４に記載の半導体装置。
【００４１】（実施態様１９）前記エピタキシャル層
が、前記蛍光物質を含む樹脂によって部分的に別の波長
に変換されて、均一な白に見える光を生じることにな
る、所定の波長の光を放出することを特徴とする、実施
態様１４に記載の半導体装置。
【００４２】（実施態様２０）前記エピタキシャル層
が、青色光を生じることと、前記ＹＡＧ／Ｇｄ：Ｃｅ蛍
光物質を含む樹脂が、前記青色光の大部分に反応して、
緑色及び赤色光を放出することと、前記ＹＡＧ／Ｇｄ：
Ｃｅ蛍光物質を含む樹脂が、それから放出される前記緑
色及び赤色光と、それを通る前記残りの青色光から白に
見える光を生じることを特徴とする、実施態様１４に記
載の半導体装置。
【００４３】
【発明の効果】以上のように、本発明を用いると、透明
スペーサによって被われた発光ダイオードを備えている
ので、蛍光材料がより均一に照明され、一定して均一な
白色光ＬＥＤが得られる。これによって、黄色及び／ま
たは青色光を放出する、白色半導体灯に関する問題が解
消される。
【図面の簡単な説明】
【図１】従来のＬＥＤランプの断面図である。
【図２】先行技術によるＬＥＤ及びそのカプセル封止シ
ステムの拡大図である。
【図３】本発明のカプセル封止システムを備えたＬＥＤ
の拡大図である。
【図４】本発明のカプセル封止システムを利用した、表
面実装装置におけるＬＥＤの拡大図である。
【符号の説明】
１０：ＬＥＤランプ １２、１４：リード・フレーム １６：凹型反射領域 １８：ＬＥＤ ２０、２２：ワイヤ・ボンド ２４：蛍光材料 ２６：カプセル封止エポキシ樹脂 ２８、３０：環状青色リングの光線 ３２、３４：外側黄色環状リングの光線 ３６、３８：内側黄色環状リングの光線 ４０、４２：薄い領域 ４４：厚い領域 ５０：透明スペーサ ５２：蛍光材料 ６０：ＬＥＤ ６２：表面実装装置の装置基板 ６４：透明スペーサ ６６：蛍光材料の層 ６８：カプセル封止層

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】半導体装置であって、 発光半導体と、 前記発光半導体のまわりに配置された透明スペーサと、 前記発光半導体及び前記透明スペーサの上に配置された
    蛍光材料を含む層と、 前記発光半導体に接続されて、前記発光半導体に付勢
    し、発光させる入力端子とを有する半導体装置。
JP24190199A 1998-09-01 1999-08-27 発光半導体を備えた半導体装置 Expired - Lifetime JP4562828B2 (ja)

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US09/144,744 US5959316A (en) 1998-09-01 1998-09-01 Multiple encapsulation of phosphor-LED devices

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