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IT1250783B - Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori. - Google Patents

Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori.

Info

Publication number
IT1250783B
IT1250783B ITRM910727A ITRM910727A IT1250783B IT 1250783 B IT1250783 B IT 1250783B IT RM910727 A ITRM910727 A IT RM910727A IT RM910727 A ITRM910727 A IT RM910727A IT 1250783 B IT1250783 B IT 1250783B
Authority
IT
Italy
Prior art keywords
source voltage
voltage
circuit
differential amplifier
amplifier circuit
Prior art date
Application number
ITRM910727A
Other languages
English (en)
Inventor
Gyo-Jin Han
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM910727A0 publication Critical patent/ITRM910727A0/it
Publication of ITRM910727A1 publication Critical patent/ITRM910727A1/it
Application granted granted Critical
Publication of IT1250783B publication Critical patent/IT1250783B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Viene fornito un circuito di controllo di tensione di sorgente comprendente un circuito di generazione di tensione di riferimento con un circuito a retroazione negativa, un circuito di percezione di livello di tensione di sorgente per aumentare la tensione di sorgente interna quando la tensione esterna supera una data tensione, un primo circuito amplificatore differenziale per funzionamento attivo, ed un secondo circuito amplificatore differenziale per funzionamento in attesa, in modo che venga prodotta una tensione di sorgente interna stabile e la pendenza della tensione di sorgente interna venga facilmente regolata quando la tensione di sorgente di tensione esterna supera il valore dato. Il primo circuito amplificatore differenziale riceve la tensione di riferimento e la tensione della sorgente interna, controllato da un primo segnale di controllo e l'uscita del circuito di percezione del livello di tensione di sorgente. Il secondo circuito amplificatore differenziale riceve la tensione di riferimento e la tensione di sorgente interna, controllata da un secondo segnale di controllo.
ITRM910727A 1990-09-29 1991-09-27 Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori. IT1250783B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900015678A KR930009148B1 (ko) 1990-09-29 1990-09-29 전원전압 조정회로

Publications (3)

Publication Number Publication Date
ITRM910727A0 ITRM910727A0 (it) 1991-09-27
ITRM910727A1 ITRM910727A1 (it) 1992-03-30
IT1250783B true IT1250783B (it) 1995-04-21

Family

ID=19304259

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910727A IT1250783B (it) 1990-09-29 1991-09-27 Circuito di controllo di tensione di sorgente, in particolare per dispositivi di memoria a semiconduttori.

Country Status (11)

Country Link
US (1) US5077518A (it)
JP (1) JPH07101374B2 (it)
KR (1) KR930009148B1 (it)
CN (1) CN1044412C (it)
DE (1) DE4037206C2 (it)
FR (1) FR2667409B1 (it)
GB (1) GB2248357B (it)
HK (1) HK36197A (it)
IT (1) IT1250783B (it)
NL (1) NL193038C (it)
RU (1) RU1838814C (it)

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DE69229995T2 (de) * 1992-06-30 2000-03-16 Stmicroelectronics S.R.L. Spannungsregler für Speichergeräte
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JP3523718B2 (ja) 1995-02-06 2004-04-26 株式会社ルネサステクノロジ 半導体装置
US5570060A (en) * 1995-03-28 1996-10-29 Sgs-Thomson Microelectronics, Inc. Circuit for limiting the current in a power transistor
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DE19716430A1 (de) * 1997-04-18 1998-11-19 Siemens Ag Schaltungsanordnung zur Erzeugung einer internen Versorgungsspannung
DE69719188T2 (de) * 1997-11-05 2003-12-04 Stmicroelectronics S.R.L., Agrate Brianza Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren
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JP3964182B2 (ja) * 2001-11-02 2007-08-22 株式会社ルネサステクノロジ 半導体装置
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JP5325628B2 (ja) * 2009-03-26 2013-10-23 ラピスセミコンダクタ株式会社 半導体メモリの基準電位発生回路
US8493795B2 (en) * 2009-12-24 2013-07-23 Samsung Electronics Co., Ltd. Voltage stabilization device and semiconductor device including the same, and voltage generation method
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CN102541133A (zh) * 2011-05-11 2012-07-04 电子科技大学 一种全温度范围补偿的电压基准源
CN102289243B (zh) * 2011-06-30 2013-06-12 西安电子科技大学 Cmos带隙基准源
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CN109274362A (zh) * 2018-12-03 2019-01-25 上海艾为电子技术股份有限公司 控制电路
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Also Published As

Publication number Publication date
GB2248357A (en) 1992-04-01
NL9100497A (nl) 1992-04-16
NL193038B (nl) 1998-04-01
NL193038C (nl) 1998-08-04
CN1051438A (zh) 1991-05-15
GB2248357B (en) 1994-07-06
GB9112078D0 (en) 1991-07-24
HK36197A (en) 1997-04-04
JPH04145509A (ja) 1992-05-19
JPH07101374B2 (ja) 1995-11-01
CN1044412C (zh) 1999-07-28
ITRM910727A0 (it) 1991-09-27
DE4037206C2 (de) 1995-08-10
KR920007339A (ko) 1992-04-28
ITRM910727A1 (it) 1992-03-30
RU1838814C (ru) 1993-08-30
DE4037206A1 (de) 1992-04-09
FR2667409A1 (fr) 1992-04-03
US5077518A (en) 1991-12-31
FR2667409B1 (fr) 1993-07-16
KR930009148B1 (ko) 1993-09-23

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970829