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HK1206147A1 - Method for producing semiconductor device, and semiconductor device - Google Patents

Method for producing semiconductor device, and semiconductor device

Info

Publication number
HK1206147A1
HK1206147A1 HK15106510.1A HK15106510A HK1206147A1 HK 1206147 A1 HK1206147 A1 HK 1206147A1 HK 15106510 A HK15106510 A HK 15106510A HK 1206147 A1 HK1206147 A1 HK 1206147A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
producing
producing semiconductor
semiconductor
Prior art date
Application number
HK15106510.1A
Other languages
English (en)
Chinese (zh)
Inventor
高田圭太
團野忠敏
波多俊幸
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1206147A1 publication Critical patent/HK1206147A1/xx

Links

Classifications

    • H—ELECTRICITY
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK15106510.1A 2012-09-24 2015-07-08 Method for producing semiconductor device, and semiconductor device HK1206147A1 (en)

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JP6316708B2 (ja) * 2014-08-26 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9171788B1 (en) * 2014-09-30 2015-10-27 Alpha And Omega Semiconductor Incorporated Semiconductor package with small gate clip and assembly method
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JP6507779B2 (ja) * 2015-03-26 2019-05-08 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電子機器
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JP6591302B2 (ja) * 2016-01-29 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2017162866A (ja) * 2016-03-07 2017-09-14 株式会社東芝 半導体装置
CN106229307B (zh) * 2016-08-01 2019-05-17 长电科技（宿迁）有限公司 铝线焊点表面二次装片的焊接结构及其工艺方法
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JP6901902B2 (ja) * 2017-04-27 2021-07-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6777815B2 (ja) * 2017-05-10 2020-10-28 三井化学株式会社 半導体装置の製造方法および半導体装置の中間体
US10804186B2 (en) * 2017-05-12 2020-10-13 Mitsubishi Electric Corporation Semiconductor module and power converter
DE112017008277T5 (de) * 2017-12-13 2020-08-20 Mitsubishi Electric Corporation Halbleitervorrichtung und leistungsumwandlungsvorrichtung
EP3633715A1 (en) * 2018-10-02 2020-04-08 Infineon Technologies Austria AG Multi-clip structure for die bonding
JP7199214B2 (ja) * 2018-12-17 2023-01-05 ローム株式会社 半導体装置および電力変換装置
JP7364168B2 (ja) * 2019-02-12 2023-10-18 住友電工デバイス・イノベーション株式会社 半導体モジュール及び半導体デバイス収容体
JP7222822B2 (ja) * 2019-06-18 2023-02-15 株式会社東芝 半導体装置
US11538768B2 (en) * 2019-10-04 2022-12-27 Texas Instruments Incorporated Leadframe with ground pad cantilever
JP7510764B2 (ja) 2020-01-30 2024-07-04 ローム株式会社 半導体装置及び半導体装置の製造方法
JP7264143B2 (ja) * 2020-11-12 2023-04-25 株式会社デンソー 半導体モジュール、および、それを含むパワーモジュール
FR3118390A1 (fr) * 2020-12-22 2022-06-24 Valeo Equipements Electriques Moteur Module de puissance avec surmoulage et systemes comprenant un tel module de puissance
FR3118391B1 (fr) * 2020-12-22 2025-01-17 Valeo Equip Electr Moteur Module de puissance avec surmoulage et systemes comprenant un tel module de puissance
KR102341396B1 (ko) * 2021-05-04 2021-12-21 제엠제코(주) 반도체 패키지 및 이에 적용되는 금속 브릿지
US12021019B2 (en) * 2021-10-29 2024-06-25 Texas Instruments Incorporated Semiconductor device package with thermal pad

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JP5870200B2 (ja) 2016-02-24
JPWO2014045435A1 (ja) 2016-08-18
TW201413839A (zh) 2014-04-01
CN104603943B (zh) 2017-07-04
US20150206830A1 (en) 2015-07-23
KR20150056531A (ko) 2015-05-26
CN104603943A (zh) 2015-05-06

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