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FR2957186B1 - Cellule memoire de type sram - Google Patents

Cellule memoire de type sram

Info

Publication number
FR2957186B1
FR2957186B1 FR1051652A FR1051652A FR2957186B1 FR 2957186 B1 FR2957186 B1 FR 2957186B1 FR 1051652 A FR1051652 A FR 1051652A FR 1051652 A FR1051652 A FR 1051652A FR 2957186 B1 FR2957186 B1 FR 2957186B1
Authority
FR
France
Prior art keywords
memory cell
sram type
sram
type
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1051652A
Other languages
English (en)
Other versions
FR2957186A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Bich-Yen Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1051652A priority Critical patent/FR2957186B1/fr
Priority to US13/039,167 priority patent/US8575697B2/en
Priority to EP11156833.3A priority patent/EP2365520A3/fr
Priority to TW100107370A priority patent/TWI474319B/zh
Priority to CN201110054823.9A priority patent/CN102194516B/zh
Priority to KR1020110020044A priority patent/KR101224948B1/ko
Priority to SG2011016151A priority patent/SG174685A1/en
Priority to JP2011050489A priority patent/JP2011205092A/ja
Publication of FR2957186A1 publication Critical patent/FR2957186A1/fr
Application granted granted Critical
Publication of FR2957186B1 publication Critical patent/FR2957186B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
FR1051652A 2010-03-08 2010-03-08 Cellule memoire de type sram Active FR2957186B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1051652A FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram
US13/039,167 US8575697B2 (en) 2010-03-08 2011-03-02 SRAM-type memory cell
EP11156833.3A EP2365520A3 (fr) 2010-03-08 2011-03-03 Cellule mémoire de type SRAM
TW100107370A TWI474319B (zh) 2010-03-08 2011-03-04 靜態隨機存取記憶體型態之記憶體胞元及其製造與控制之方法
CN201110054823.9A CN102194516B (zh) 2010-03-08 2011-03-07 Sram型存储器单元
KR1020110020044A KR101224948B1 (ko) 2010-03-08 2011-03-07 Ｓｒａｍ-타입 메모리 셀
SG2011016151A SG174685A1 (en) 2010-03-08 2011-03-07 Sram-type memory cell
JP2011050489A JP2011205092A (ja) 2010-03-08 2011-03-08 Ｓｒａｍメモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1051652A FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram

Publications (2)

Publication Number Publication Date
FR2957186A1 FR2957186A1 (fr) 2011-09-09
FR2957186B1 true FR2957186B1 (fr) 2012-09-28

Family

ID=42829376

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1051652A Active FR2957186B1 (fr) 2010-03-08 2010-03-08 Cellule memoire de type sram

Country Status (8)

Country Link
US (1) US8575697B2 (fr)
EP (1) EP2365520A3 (fr)
JP (1) JP2011205092A (fr)
KR (1) KR101224948B1 (fr)
CN (1) CN102194516B (fr)
FR (1) FR2957186B1 (fr)
SG (1) SG174685A1 (fr)
TW (1) TWI474319B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2974666B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor de precharge dedie
FR2974656B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor a grille de passage dedie
US9490241B2 (en) * 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9029956B2 (en) * 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control
US9048136B2 (en) * 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control
JP5847549B2 (ja) * 2011-11-16 2016-01-27 ルネサスエレクトロニクス株式会社 半導体装置
FR2983345A1 (fr) * 2011-11-30 2013-05-31 Soitec Silicon On Insulator Grille arriere unifiee
US9111635B2 (en) * 2013-01-25 2015-08-18 Qualcomm Incorporated Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods
US9111801B2 (en) 2013-04-04 2015-08-18 Stmicroelectronics, Inc. Integrated circuit devices and fabrication techniques
FR3006809A1 (fr) * 2013-06-07 2014-12-12 St Microelectronics Sa Polarisation d'une cellule mos realisee dans une technologie fdsoi
GB2520740A (en) * 2013-11-29 2015-06-03 St Microelectronics Res & Dev Low power die
US10062680B2 (en) 2014-05-08 2018-08-28 Qualcomm Incorporated Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) standard library cell circuits having a gate back-bias rail(s), and related systems and methods
US9659933B2 (en) * 2015-04-27 2017-05-23 Stmicroelectronics International N.V. Body bias multiplexer for stress-free transmission of positive and negative supplies
US9634697B2 (en) 2015-09-09 2017-04-25 Qualcomm Incorporated Antenna selection and tuning
US10062701B2 (en) * 2016-11-24 2018-08-28 United Microelectronics Corp. Static random access memory unit cell
KR20180076842A (ko) 2016-12-28 2018-07-06 삼성전자주식회사 오프셋 제거 기능을 갖는 감지 증폭기
CN112581988A (zh) * 2020-12-15 2021-03-30 中国科学院上海微系统与信息技术研究所 静态随机存储器单元以及存储器

Family Cites Families (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
KR100213602B1 (ko) 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US5028810A (en) 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
JPH04345064A (ja) 1991-05-22 1992-12-01 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2717740B2 (ja) 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
EP0564204A3 (en) 1992-03-30 1994-09-28 Mitsubishi Electric Corp Semiconductor device
US5325054A (en) * 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP3488730B2 (ja) * 1993-11-05 2004-01-19 株式会社ルネサステクノロジ 半導体集積回路装置
US5455791A (en) 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
JP3003088B2 (ja) 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JP3549602B2 (ja) 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JPH08255846A (ja) 1995-03-17 1996-10-01 Nippondenso Co Ltd 半導体装置及びその製造方法
JP3288554B2 (ja) 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
JPH0982814A (ja) 1995-07-10 1997-03-28 Denso Corp 半導体集積回路装置及びその製造方法
US6787844B2 (en) 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JP3265178B2 (ja) 1996-02-20 2002-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JPH10125064A (ja) 1996-10-14 1998-05-15 Toshiba Corp 記憶装置
JPH10208484A (ja) 1997-01-29 1998-08-07 Mitsubishi Electric Corp 半導体記憶装置のデータ読出回路及び半導体記憶装置
US5889293A (en) 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
JP3699823B2 (ja) 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6072217A (en) 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
FR2779869B1 (fr) 1998-06-15 2003-05-16 Commissariat Energie Atomique Circuit integre de type soi a capacite de decouplage, et procede de realisation d'un tel circuit
US6826730B2 (en) 1998-12-15 2004-11-30 Texas Instruments Incorporated System and method for controlling current in an integrated circuit
JP3456913B2 (ja) 1998-12-25 2003-10-14 株式会社東芝 半導体装置
US6372600B1 (en) 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
US6476462B2 (en) 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6300218B1 (en) 2000-05-08 2001-10-09 International Business Machines Corporation Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
US6350653B1 (en) 2000-10-12 2002-02-26 International Business Machines Corporation Embedded DRAM on silicon-on-insulator substrate
JP2002164544A (ja) 2000-11-28 2002-06-07 Sony Corp 半導体装置
US6614190B2 (en) 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP3982218B2 (ja) 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
JP3884266B2 (ja) 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6611023B1 (en) 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US6498057B1 (en) 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
EP1357603A3 (fr) 2002-04-18 2004-01-14 Innovative Silicon SA Dispositif semiconducteur
US6573549B1 (en) * 2002-06-21 2003-06-03 Texas Instruments Incorporated Dynamic threshold voltage 6T SRAM cell
US6838723B2 (en) 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7710771B2 (en) 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP2004179506A (ja) 2002-11-28 2004-06-24 Seiko Epson Corp Ｓｏｉ構造を有する半導体基板及びその製造方法及び半導体装置
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
JP2004303499A (ja) 2003-03-31 2004-10-28 Hitachi High-Technologies Corp イオン注入装置およびイオン注入方法
US6919647B2 (en) * 2003-07-03 2005-07-19 American Semiconductor, Inc. SRAM cell
JP4077381B2 (ja) 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US6965143B2 (en) 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
JP2005158952A (ja) 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
US7109532B1 (en) 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
US20050255666A1 (en) 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
US7112997B1 (en) 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4795653B2 (ja) 2004-06-15 2011-10-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7190616B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7196921B2 (en) 2004-07-19 2007-03-27 Silicon Storage Technology, Inc. High-speed and low-power differential non-volatile content addressable memory cell and array
US7560361B2 (en) 2004-08-12 2009-07-14 International Business Machines Corporation Method of forming gate stack for semiconductor electronic device
KR100663359B1 (ko) 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
US20060267064A1 (en) 2005-05-31 2006-11-30 Infineon Technologies Ag Semiconductor memory device
US7274618B2 (en) 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
JP4967264B2 (ja) 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
US7314794B2 (en) 2005-08-08 2008-01-01 International Business Machines Corporation Low-cost high-performance planar back-gate CMOS
JP4413841B2 (ja) 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
JP5054919B2 (ja) 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100735613B1 (ko) 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
US7304903B2 (en) 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
JP4855786B2 (ja) * 2006-01-25 2012-01-18 株式会社東芝 半導体装置
US7417889B2 (en) * 2006-02-27 2008-08-26 International Business Machines Corporation Independent-gate controlled asymmetrical memory cell and memory using the cell
US20070211517A1 (en) * 2006-03-10 2007-09-13 Freescale Semiconductor, Inc. System and method for operating a memory circuit
US7681628B2 (en) * 2006-04-12 2010-03-23 International Business Machines Corporation Dynamic control of back gate bias in a FinFET SRAM cell
JP4762036B2 (ja) 2006-04-14 2011-08-31 株式会社東芝 半導体装置
CN101432976A (zh) * 2006-04-24 2009-05-13 松下电器产业株式会社 接收装置、使用该接收装置的电子设备以及接收方法
US7494902B2 (en) 2006-06-23 2009-02-24 Interuniversitair Microelektronica Centrum Vzw (Imec) Method of fabricating a strained multi-gate transistor
KR100843055B1 (ko) 2006-08-17 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
US7560344B2 (en) 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
JP2008130670A (ja) * 2006-11-17 2008-06-05 Seiko Epson Corp 半導体装置、論理回路および電子機器
JP5057430B2 (ja) * 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
US7400525B1 (en) * 2007-01-11 2008-07-15 International Business Machines Corporation Memory cell with independent-gate controlled access devices and memory using the cell
JP4869088B2 (ja) 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
JP5019436B2 (ja) 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5594927B2 (ja) 2007-04-11 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
FR2915024A1 (fr) 2007-04-12 2008-10-17 St Microelectronics Crolles 2 Procede de fabrication permettant l'homogeneisation de l'environnement de transistors et dispositif associe
US7729149B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
EP2015362A1 (fr) 2007-06-04 2009-01-14 STMicroelectronics (Crolles 2) SAS Matrice à semi-conducteurs et procédé de fabrication correspondant
US7449922B1 (en) 2007-06-15 2008-11-11 Arm Limited Sensing circuitry and method of detecting a change in voltage on at least one input line
US7759714B2 (en) 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
FR2918823B1 (fr) 2007-07-13 2009-10-16 Ecole Centrale De Lyon Etablis Cellule logique reconfigurable a base de transistors mosfet double grille
FR2919112A1 (fr) 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
JP5035345B2 (ja) 2007-08-30 2012-09-26 富士通セミコンダクター株式会社 イオン注入装置、基板クランプ機構、及びイオン注入方法
US7710765B2 (en) * 2007-09-27 2010-05-04 Micron Technology, Inc. Back gated SRAM cell
KR100884344B1 (ko) 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
JP5222520B2 (ja) 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20090101940A1 (en) 2007-10-19 2009-04-23 Barrows Corey K Dual gate fet structures for flexible gate array design methodologies
DE102007052097B4 (de) 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
FR2925223B1 (fr) 2007-12-18 2010-02-19 Soitec Silicon On Insulator Procede d'assemblage avec marques enterrees
US7593265B2 (en) 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
JP5263495B2 (ja) * 2008-01-25 2013-08-14 ルネサスエレクトロニクス株式会社 スタティック型半導体記憶装置
DE112008003726B4 (de) 2008-02-20 2023-09-21 Soitec Oxidation nach Oxidauflösung
JP5270938B2 (ja) * 2008-03-19 2013-08-21 ルネサスエレクトロニクス株式会社 半導体集積回路及び半導体集積回路の設計方法
WO2009119666A1 (fr) * 2008-03-28 2009-10-01 独立行政法人産業技術総合研究所 Cellule sram et dispositif sram
JP6053250B2 (ja) 2008-06-12 2016-12-27 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
WO2010007478A1 (fr) 2008-06-13 2010-01-21 Yale University Dispositifs à semi-conducteurs à oxyde de métal complémentaire améliorés
US8012814B2 (en) 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
US8120110B2 (en) 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
KR101623958B1 (ko) 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101522400B1 (ko) 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
JP4997392B2 (ja) * 2009-06-01 2012-08-08 独立行政法人産業技術総合研究所 二重絶縁ゲート電界トランジスタを用いたｍｏｓトランジスタ回路およびそれを用いたｃｍｏｓトランジスタ回路、ｓｒａｍセル回路、ｃｍｏｓ−ｓｒａｍセル回路、集積回路

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FR2957186A1 (fr) 2011-09-09
EP2365520A3 (fr) 2013-09-11
SG174685A1 (en) 2011-10-28
US8575697B2 (en) 2013-11-05
CN102194516B (zh) 2015-07-29
US20110233675A1 (en) 2011-09-29
EP2365520A2 (fr) 2011-09-14
CN102194516A (zh) 2011-09-21
TWI474319B (zh) 2015-02-21
JP2011205092A (ja) 2011-10-13
KR20110102196A (ko) 2011-09-16
TW201203247A (en) 2012-01-16
KR101224948B1 (ko) 2013-01-22

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