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FR2970592B1 - Cellule mémoire volatile/non volatile programmable - Google Patents

Cellule mémoire volatile/non volatile programmable

Info

Publication number
FR2970592B1
FR2970592B1 FR1150406A FR1150406A FR2970592B1 FR 2970592 B1 FR2970592 B1 FR 2970592B1 FR 1150406 A FR1150406 A FR 1150406A FR 1150406 A FR1150406 A FR 1150406A FR 2970592 B1 FR2970592 B1 FR 2970592B1
Authority
FR
France
Prior art keywords
volatile
memory cell
programmable
volatile memory
programmable volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1150406A
Other languages
English (en)
Other versions
FR2970592A1 (fr
Inventor
Yoann Guillemenet
Lionel Torres
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Montpellier filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1150406A priority Critical patent/FR2970592B1/fr
Priority to PCT/EP2012/050772 priority patent/WO2012098184A1/fr
Priority to EP12702206.9A priority patent/EP2666167B1/fr
Priority to US13/980,558 priority patent/US9042157B2/en
Publication of FR2970592A1 publication Critical patent/FR2970592A1/fr
Application granted granted Critical
Publication of FR2970592B1 publication Critical patent/FR2970592B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
FR1150406A 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile programmable Expired - Fee Related FR2970592B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1150406A FR2970592B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile programmable
PCT/EP2012/050772 WO2012098184A1 (fr) 2011-01-19 2012-01-19 Cellule de mémoire volatile/non-volatile programmable
EP12702206.9A EP2666167B1 (fr) 2011-01-19 2012-01-19 Cellule de mémoire volatile/non-volatile programmable
US13/980,558 US9042157B2 (en) 2011-01-19 2012-01-19 Programmable volatile/non-volatile memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1150406A FR2970592B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile programmable

Publications (2)

Publication Number Publication Date
FR2970592A1 FR2970592A1 (fr) 2012-07-20
FR2970592B1 true FR2970592B1 (fr) 2013-02-15

Family

ID=45562286

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1150406A Expired - Fee Related FR2970592B1 (fr) 2011-01-19 2011-01-19 Cellule mémoire volatile/non volatile programmable

Country Status (4)

Country Link
US (1) US9042157B2 (fr)
EP (1) EP2666167B1 (fr)
FR (1) FR2970592B1 (fr)
WO (1) WO2012098184A1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
US10056907B1 (en) * 2011-07-29 2018-08-21 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US8861271B1 (en) * 2012-03-16 2014-10-14 Cypress Semiconductor Corporation High reliability non-volatile static random access memory devices, methods and systems
FR2990089B1 (fr) * 2012-04-27 2014-04-11 Commissariat Energie Atomique Dispositif logique reprogrammable resistant aux rayonnements.
FR3004577A1 (fr) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
US9548117B2 (en) 2013-12-06 2017-01-17 Empire Technology Development Llc Non-volatile SRAM with multiple storage states
US9349440B1 (en) * 2014-12-11 2016-05-24 Empire Technology Development Llc Non-volatile SRAM with multiple storage states
US9741452B2 (en) 2015-02-23 2017-08-22 Qualcomm Incorporated Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods
US9842634B2 (en) 2015-02-23 2017-12-12 Qualcomm Incorporated Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods
US9595332B2 (en) 2015-06-15 2017-03-14 Cypress Semiconductor Corporation High speed, high voltage tolerant circuits in flash path
US9515075B1 (en) 2015-08-31 2016-12-06 Cypress Semiconductor Corporation Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier
JP6178451B1 (ja) * 2016-03-16 2017-08-09 株式会社東芝 メモリセルおよび磁気メモリ
US10199105B2 (en) 2016-05-12 2019-02-05 Crossbar, Inc. Non-volatile resistive memory configuration cell for field programmable gate array
TWI686930B (zh) * 2017-04-11 2020-03-01 國立交通大學 非揮發性記憶體及其操作方法
US10672465B1 (en) * 2019-04-18 2020-06-02 Globalfoundries Inc. Neuromorphic memory device

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US4006469A (en) 1975-12-16 1977-02-01 International Business Machines Corporation Data storage cell with transistors operating at different threshold voltages
DE19548053A1 (de) 1995-12-21 1997-07-03 Siemens Ag Verfahren zum Betrieb einer SRAM MOS-Transistor Speicherzelle
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP3834787B2 (ja) 2001-11-22 2006-10-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 不揮発性ラッチ回路
US6687154B2 (en) 2002-02-25 2004-02-03 Aplus Flash Technology, Inc. Highly-integrated flash memory and mask ROM array architecture
JP3768504B2 (ja) 2002-04-10 2006-04-19 松下電器産業株式会社 不揮発性フリップフロップ
JP3875139B2 (ja) 2002-04-24 2007-01-31 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置、そのデータ書き込み制御方法およびプログラム
KR100479810B1 (ko) 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
US7335906B2 (en) 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
DE102005001667B4 (de) * 2005-01-13 2011-04-21 Qimonda Ag Nichtflüchtige Speicherzelle zum Speichern eines Datums in einer integrierten Schaltung
US7764081B1 (en) 2005-08-05 2010-07-27 Xilinx, Inc. Programmable logic device (PLD) with memory refresh based on single event upset (SEU) occurrence to maintain soft error immunity
US7599210B2 (en) 2005-08-19 2009-10-06 Sony Corporation Nonvolatile memory cell, storage device and nonvolatile logic circuit
DE102005049232A1 (de) 2005-10-14 2007-04-26 Infineon Technologies Ag Integrierter Schaltkreis und Verfahren zum Betreiben eines integrierten Schaltkreises
JP5311784B2 (ja) 2006-10-11 2013-10-09 ルネサスエレクトロニクス株式会社 半導体装置
US7692954B2 (en) 2007-03-12 2010-04-06 International Business Machines Corporation Apparatus and method for integrating nonvolatile memory capability within SRAM devices
WO2009031231A1 (fr) 2007-09-07 2009-03-12 Renesas Technology Corp. Dispositif à semi-conducteur
US7791941B2 (en) 2007-10-26 2010-09-07 Micron Technology, Inc. Non-volatile SRAM cell
WO2009072511A1 (fr) 2007-12-06 2009-06-11 Nec Corporation Circuit de verrouillage non volatil
US7760538B1 (en) 2008-03-04 2010-07-20 Xilinx, Inc. Non-volatile SRAM cell
US7796417B1 (en) * 2008-04-14 2010-09-14 Altera Corporation Memory circuits having programmable non-volatile resistors
US7961502B2 (en) 2008-12-04 2011-06-14 Qualcomm Incorporated Non-volatile state retention latch
US8194438B2 (en) 2009-02-12 2012-06-05 Seagate Technology Llc nvSRAM having variable magnetic resistors
US8605490B2 (en) 2009-10-12 2013-12-10 Micron Technology, Inc. Non-volatile SRAM cell that incorporates phase-change memory into a CMOS process
FR2966636B1 (fr) 2010-10-26 2012-12-14 Centre Nat Rech Scient Element magnetique inscriptible
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
TWI429062B (zh) 2011-06-15 2014-03-01 Ind Tech Res Inst 非揮發性靜態隨機存取式記憶胞以及記憶體電路
US8773896B2 (en) * 2012-05-18 2014-07-08 Alexander Mikhailovich Shukh Nonvolatile latch circuit

Also Published As

Publication number Publication date
US9042157B2 (en) 2015-05-26
US20140050012A1 (en) 2014-02-20
WO2012098184A4 (fr) 2012-11-01
WO2012098184A1 (fr) 2012-07-26
EP2666167A1 (fr) 2013-11-27
EP2666167B1 (fr) 2018-09-05
FR2970592A1 (fr) 2012-07-20

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