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FR2724489B1 - Dispositif a semiconducteur et son procede de fabrication - Google Patents

Dispositif a semiconducteur et son procede de fabrication

Info

Publication number
FR2724489B1
FR2724489B1 FR9509874A FR9509874A FR2724489B1 FR 2724489 B1 FR2724489 B1 FR 2724489B1 FR 9509874 A FR9509874 A FR 9509874A FR 9509874 A FR9509874 A FR 9509874A FR 2724489 B1 FR2724489 B1 FR 2724489B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9509874A
Other languages
English (en)
Other versions
FR2724489A1 (fr
Inventor
Jun Wada
Toshihiro Ogihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2724489A1 publication Critical patent/FR2724489A1/fr
Application granted granted Critical
Publication of FR2724489B1 publication Critical patent/FR2724489B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR9509874A 1994-08-19 1995-08-17 Dispositif a semiconducteur et son procede de fabrication Expired - Lifetime FR2724489B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19546094 1994-08-19

Publications (2)

Publication Number Publication Date
FR2724489A1 FR2724489A1 (fr) 1996-03-15
FR2724489B1 true FR2724489B1 (fr) 1998-09-25

Family

ID=16341448

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9509874A Expired - Lifetime FR2724489B1 (fr) 1994-08-19 1995-08-17 Dispositif a semiconducteur et son procede de fabrication

Country Status (3)

Country Link
US (1) US5923072A (fr)
KR (1) KR100211070B1 (fr)
FR (1) FR2724489B1 (fr)

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* Cited by examiner, † Cited by third party
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DE19623517C1 (de) * 1996-06-12 1997-08-21 Siemens Ag MOS-Transistor für biotechnische Anwendungen
JP3856544B2 (ja) * 1997-10-29 2006-12-13 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP3534624B2 (ja) * 1998-05-01 2004-06-07 沖電気工業株式会社 半導体装置の製造方法
TW385366B (en) * 1998-06-05 2000-03-21 Nat Science Council Hydrogen-sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor
JP2001015526A (ja) * 1999-06-28 2001-01-19 Nec Kansai Ltd 電界効果トランジスタ
JP2002118122A (ja) * 2000-10-06 2002-04-19 Nec Corp ショットキゲート電界効果トランジスタ
KR100704510B1 (ko) * 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 하부 기판 및 그의 제조방법
JP3724464B2 (ja) * 2002-08-19 2005-12-07 株式会社デンソー 半導体圧力センサ
KR100497193B1 (ko) * 2002-12-17 2005-06-28 동부아남반도체 주식회사 반도체 소자의 본딩 패드와 이의 형성 방법
JP4339736B2 (ja) * 2004-04-06 2009-10-07 三菱電機株式会社 半導体装置の製造方法
US9640649B2 (en) * 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
JP2007129018A (ja) 2005-11-02 2007-05-24 Nec Electronics Corp 半導体装置
US7935620B2 (en) * 2007-12-05 2011-05-03 Freescale Semiconductor, Inc. Method for forming semiconductor devices with low leakage Schottky contacts
JP2009141237A (ja) * 2007-12-10 2009-06-25 Panasonic Corp 半導体装置及びその製造方法
JP5535475B2 (ja) * 2008-12-26 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
US8319310B2 (en) * 2009-03-31 2012-11-27 Freescale Semiconductor, Inc. Field effect transistor gate process and structure
WO2013011617A1 (fr) * 2011-07-15 2013-01-24 パナソニック株式会社 Dispositif semi-conducteur et procédé de fabrication de celui-ci
JP2013258368A (ja) * 2012-06-14 2013-12-26 Toshiba Corp 半導体装置
JP6356009B2 (ja) * 2014-08-25 2018-07-11 ルネサスエレクトロニクス株式会社 半導体装置
KR102029493B1 (ko) * 2014-09-29 2019-10-07 삼성전기주식회사 적층 세라믹 커패시터 및 그 실장 기판
JP6816776B2 (ja) * 2017-01-13 2021-01-20 三菱電機株式会社 半導体装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4319258A (en) * 1980-03-07 1982-03-09 General Dynamics, Pomona Division Schottky barrier photovoltaic detector
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
US4316201A (en) * 1980-05-08 1982-02-16 The United States Of America As Represented By The Secretary Of The Navy Low-barrier-height epitaxial Ge-GaAs mixer diode
JPS577985A (en) * 1980-06-18 1982-01-16 Asahi Chem Ind Co Ltd Magnetoelectricity converting element and manufacture thereof
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof
US4398344A (en) * 1982-03-08 1983-08-16 International Rectifier Corporation Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface
JPS615562A (ja) * 1984-06-20 1986-01-11 Hitachi Ltd 半導体装置
EP0182088B1 (fr) * 1984-10-26 1990-03-21 Siemens Aktiengesellschaft Contact Schottky à la surface d'un semi-conducteur et son procédé de réalisatioN
JPS6229175A (ja) * 1985-07-29 1987-02-07 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタの製造方法
KR930006140B1 (ko) * 1988-01-21 1993-07-07 세이꼬 엡슨 가부시끼가이샤 Mis형 반도체 집적회로장치
JPH01255235A (ja) * 1988-04-05 1989-10-12 Nec Corp 半導体装置
JPH01283839A (ja) * 1988-05-10 1989-11-15 Seiko Epson Corp 半導体装置
JPH0230131A (ja) * 1988-07-19 1990-01-31 Seiko Epson Corp 半導体装置
JP2679333B2 (ja) * 1990-02-26 1997-11-19 日本電気株式会社 ショットキー障壁接合ゲート型電界効果トランジスタ
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
JPH0582581A (ja) * 1991-09-20 1993-04-02 Fujitsu Ltd 半導体装置の製造方法
JPH05160130A (ja) * 1991-12-09 1993-06-25 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JPH05206287A (ja) * 1992-01-27 1993-08-13 Sumitomo Electric Ind Ltd 多層配線構造
US5284801A (en) * 1992-07-22 1994-02-08 Vlsi Technology, Inc. Methods of moisture protection in semiconductor devices utilizing polyimides for inter-metal dielectric
US5369043A (en) * 1992-12-25 1994-11-29 Nippon Telegraph And Telephone Corporation Semiconductor circuit device and method for production thereof
US5585655A (en) * 1994-08-22 1996-12-17 Matsushita Electric Industrial Co., Ltd. Field-effect transistor and method of manufacturing the same
US5550065A (en) * 1994-11-25 1996-08-27 Motorola Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact

Also Published As

Publication number Publication date
FR2724489A1 (fr) 1996-03-15
KR100211070B1 (ko) 1999-07-15
US5923072A (en) 1999-07-13

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