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DE69635427D1 - Ein Verfahren zum Trocknen von Siliziumsubstraten - Google Patents

Ein Verfahren zum Trocknen von Siliziumsubstraten

Info

Publication number
DE69635427D1
DE69635427D1 DE69635427T DE69635427T DE69635427D1 DE 69635427 D1 DE69635427 D1 DE 69635427D1 DE 69635427 T DE69635427 T DE 69635427T DE 69635427 T DE69635427 T DE 69635427T DE 69635427 D1 DE69635427 D1 DE 69635427D1
Authority
DE
Germany
Prior art keywords
substrate
bath
liquid
liquid bath
silicon substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69635427T
Other languages
English (en)
Other versions
DE69635427T2 (de
Inventor
Wilhelm Schellenberger
Dieter Herrmannsdoerfer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ICTOP ENTWICKLUNGSGMBH
Original Assignee
ICTOP ENTWICKLUNGSGMBH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ICTOP ENTWICKLUNGSGMBH filed Critical ICTOP ENTWICKLUNGSGMBH
Priority to DE69635427T priority Critical patent/DE69635427T2/de
Publication of DE69635427D1 publication Critical patent/DE69635427D1/de
Application granted granted Critical
Publication of DE69635427T2 publication Critical patent/DE69635427T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Detergent Compositions (AREA)
  • Inorganic Insulating Materials (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
DE69635427T 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten Expired - Lifetime DE69635427T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE69635427T DE69635427T2 (de) 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19531031 1995-08-23
DE19531031A DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium
DE69635427T DE69635427T2 (de) 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten

Publications (2)

Publication Number Publication Date
DE69635427D1 true DE69635427D1 (de) 2005-12-15
DE69635427T2 DE69635427T2 (de) 2006-07-27

Family

ID=7770207

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19531031A Expired - Fee Related DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium
DE69635427T Expired - Lifetime DE69635427T2 (de) 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten
DE69624830T Expired - Lifetime DE69624830T2 (de) 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19531031A Expired - Fee Related DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69624830T Expired - Lifetime DE69624830T2 (de) 1995-08-23 1996-08-09 Verfahren zum Trocknen von Substraten

Country Status (24)

Country Link
EP (2) EP1199740B1 (de)
JP (1) JP3857314B2 (de)
KR (1) KR19990037642A (de)
CN (1) CN1091542C (de)
AT (2) ATE227885T1 (de)
AU (1) AU697397B2 (de)
CA (1) CA2228168A1 (de)
CZ (1) CZ291335B6 (de)
DE (3) DE19531031C2 (de)
DK (2) DK0846334T3 (de)
ES (2) ES2250292T3 (de)
HK (2) HK1010280A1 (de)
HU (1) HUP9802482A3 (de)
IL (1) IL123042A (de)
MX (1) MX9801464A (de)
NO (1) NO980734D0 (de)
PL (1) PL183355B1 (de)
PT (1) PT846334E (de)
RU (1) RU2141700C1 (de)
SI (1) SI1199740T1 (de)
SK (1) SK284835B6 (de)
TW (1) TW427952B (de)
UA (1) UA51663C2 (de)
WO (1) WO1997008742A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19613620C2 (de) 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) * 2003-12-17 2005-07-28 Friedrich-Schiller-Universität Jena Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en) 2004-12-17 2006-06-22 The Procter & Gamble Company Process for extracting liquid from a fabric
KR100897581B1 (ko) 2007-11-14 2009-05-14 주식회사 실트론 웨이퍼 건조 방법
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) * 2022-06-17 2023-05-30 高景太阳能股份有限公司 一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) * 1985-12-10 1989-02-17 Recif Sa Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) * 1989-08-04 1991-03-20 Sharp Corp 絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) * 1990-07-03 1992-03-02 Seiko Epson Corp 水切り乾燥方法
JPH04346431A (ja) * 1991-05-24 1992-12-02 Mitsubishi Electric Corp 半導体シリコンウェハの洗浄装置
EP0739252B2 (de) * 1993-09-22 2004-10-06 Legacy Systems, Inc. Verfahren und vorrichtung zur behandlung einer halbleiterscheibe in einer flüssigkeit

Also Published As

Publication number Publication date
EP0846334A1 (de) 1998-06-10
EP1199740B1 (de) 2005-11-09
EP0846334B1 (de) 2002-11-13
HUP9802482A3 (en) 2002-11-28
DE19531031A1 (de) 1997-02-27
TW427952B (en) 2001-04-01
NO980734L (no) 1998-02-20
DK1199740T3 (da) 2006-03-27
RU2141700C1 (ru) 1999-11-20
IL123042A0 (en) 1998-09-24
DE69635427T2 (de) 2006-07-27
KR19990037642A (ko) 1999-05-25
CZ291335B6 (cs) 2003-02-12
ATE227885T1 (de) 2002-11-15
IL123042A (en) 2001-04-30
WO1997008742A1 (en) 1997-03-06
PL183355B1 (pl) 2002-06-28
SI1199740T1 (sl) 2006-06-30
CN1091542C (zh) 2002-09-25
HK1043661A1 (en) 2002-09-20
CZ51798A3 (cs) 1998-07-15
JPH11514496A (ja) 1999-12-07
DE69624830D1 (de) 2002-12-19
CA2228168A1 (en) 1997-03-06
HK1043661B (zh) 2006-03-03
AU697397B2 (en) 1998-10-08
SK21298A3 (en) 1998-10-07
CN1192824A (zh) 1998-09-09
ES2250292T3 (es) 2006-04-16
DE19531031C2 (de) 1997-08-21
EP1199740A2 (de) 2002-04-24
DK0846334T3 (da) 2003-02-10
PL325121A1 (en) 1998-07-06
MX9801464A (es) 1998-11-30
NO980734D0 (no) 1998-02-20
AU6872096A (en) 1997-03-19
HK1010280A1 (en) 1999-06-17
SK284835B6 (sk) 2005-12-01
DE69624830T2 (de) 2003-03-27
PT846334E (pt) 2003-02-28
ATE309613T1 (de) 2005-11-15
HUP9802482A2 (hu) 1999-02-01
UA51663C2 (uk) 2002-12-16
ES2186800T3 (es) 2003-05-16
EP1199740A3 (de) 2003-09-03
JP3857314B2 (ja) 2006-12-13

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