[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

NO980734D0 - Fremgangsmåte for törking av silisium - Google Patents

Fremgangsmåte for törking av silisium

Info

Publication number
NO980734D0
NO980734D0 NO980734A NO980734A NO980734D0 NO 980734 D0 NO980734 D0 NO 980734D0 NO 980734 A NO980734 A NO 980734A NO 980734 A NO980734 A NO 980734A NO 980734 D0 NO980734 D0 NO 980734D0
Authority
NO
Norway
Prior art keywords
substrate
bath
liquid
liquid bath
separating
Prior art date
Application number
NO980734A
Other languages
English (en)
Other versions
NO980734L (no
Inventor
Willhelm Schellenberger
Dieter Herrmannsdoerfer
Original Assignee
Ictop Entwicklungs Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ictop Entwicklungs Gmbh filed Critical Ictop Entwicklungs Gmbh
Publication of NO980734L publication Critical patent/NO980734L/no
Publication of NO980734D0 publication Critical patent/NO980734D0/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Detergent Compositions (AREA)
  • Inorganic Insulating Materials (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
NO980734A 1995-08-23 1998-02-20 Fremgangsmåte for törking av silisium NO980734D0 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19531031A DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium
PCT/EP1996/003541 WO1997008742A1 (en) 1995-08-23 1996-08-09 Procedure for drying silicon

Publications (2)

Publication Number Publication Date
NO980734L NO980734L (no) 1998-02-20
NO980734D0 true NO980734D0 (no) 1998-02-20

Family

ID=7770207

Family Applications (1)

Application Number Title Priority Date Filing Date
NO980734A NO980734D0 (no) 1995-08-23 1998-02-20 Fremgangsmåte for törking av silisium

Country Status (24)

Country Link
EP (2) EP1199740B1 (no)
JP (1) JP3857314B2 (no)
KR (1) KR19990037642A (no)
CN (1) CN1091542C (no)
AT (2) ATE227885T1 (no)
AU (1) AU697397B2 (no)
CA (1) CA2228168A1 (no)
CZ (1) CZ291335B6 (no)
DE (3) DE19531031C2 (no)
DK (2) DK0846334T3 (no)
ES (2) ES2250292T3 (no)
HK (2) HK1010280A1 (no)
HU (1) HUP9802482A3 (no)
IL (1) IL123042A (no)
MX (1) MX9801464A (no)
NO (1) NO980734D0 (no)
PL (1) PL183355B1 (no)
PT (1) PT846334E (no)
RU (1) RU2141700C1 (no)
SI (1) SI1199740T1 (no)
SK (1) SK284835B6 (no)
TW (1) TW427952B (no)
UA (1) UA51663C2 (no)
WO (1) WO1997008742A1 (no)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19613620C2 (de) 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) * 2003-12-17 2005-07-28 Friedrich-Schiller-Universität Jena Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
WO2006066115A2 (en) 2004-12-17 2006-06-22 The Procter & Gamble Company Process for extracting liquid from a fabric
KR100897581B1 (ko) 2007-11-14 2009-05-14 주식회사 실트론 웨이퍼 건조 방법
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) * 2022-06-17 2023-05-30 高景太阳能股份有限公司 一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) * 1985-12-10 1989-02-17 Recif Sa Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) * 1989-08-04 1991-03-20 Sharp Corp 絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) * 1990-07-03 1992-03-02 Seiko Epson Corp 水切り乾燥方法
JPH04346431A (ja) * 1991-05-24 1992-12-02 Mitsubishi Electric Corp 半導体シリコンウェハの洗浄装置
EP0739252B2 (en) * 1993-09-22 2004-10-06 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid

Also Published As

Publication number Publication date
EP0846334A1 (en) 1998-06-10
EP1199740B1 (en) 2005-11-09
EP0846334B1 (en) 2002-11-13
HUP9802482A3 (en) 2002-11-28
DE19531031A1 (de) 1997-02-27
DE69635427D1 (de) 2005-12-15
TW427952B (en) 2001-04-01
NO980734L (no) 1998-02-20
DK1199740T3 (da) 2006-03-27
RU2141700C1 (ru) 1999-11-20
IL123042A0 (en) 1998-09-24
DE69635427T2 (de) 2006-07-27
KR19990037642A (ko) 1999-05-25
CZ291335B6 (cs) 2003-02-12
ATE227885T1 (de) 2002-11-15
IL123042A (en) 2001-04-30
WO1997008742A1 (en) 1997-03-06
PL183355B1 (pl) 2002-06-28
SI1199740T1 (sl) 2006-06-30
CN1091542C (zh) 2002-09-25
HK1043661A1 (en) 2002-09-20
CZ51798A3 (cs) 1998-07-15
JPH11514496A (ja) 1999-12-07
DE69624830D1 (de) 2002-12-19
CA2228168A1 (en) 1997-03-06
HK1043661B (zh) 2006-03-03
AU697397B2 (en) 1998-10-08
SK21298A3 (en) 1998-10-07
CN1192824A (zh) 1998-09-09
ES2250292T3 (es) 2006-04-16
DE19531031C2 (de) 1997-08-21
EP1199740A2 (en) 2002-04-24
DK0846334T3 (da) 2003-02-10
PL325121A1 (en) 1998-07-06
MX9801464A (es) 1998-11-30
AU6872096A (en) 1997-03-19
HK1010280A1 (en) 1999-06-17
SK284835B6 (sk) 2005-12-01
DE69624830T2 (de) 2003-03-27
PT846334E (pt) 2003-02-28
ATE309613T1 (de) 2005-11-15
HUP9802482A2 (hu) 1999-02-01
UA51663C2 (uk) 2002-12-16
ES2186800T3 (es) 2003-05-16
EP1199740A3 (en) 2003-09-03
JP3857314B2 (ja) 2006-12-13

Similar Documents

Publication Publication Date Title
NO980734L (no) Fremgangsmåte for törking av silisium
EP0459148A3 (en) Dry eye treatment process and solution
ES2148165T3 (es) Metodo para la fabricacion de un cuerpo semiconductor.
DE69636117D1 (de) Integriertes halbleiterscheibenprozesssystems
DE59008544D1 (de) Nasschemische Strukturätzung von Silizium.
DE60131897D1 (de) Verfahren und vorrichtung zur erzeugung von tröpfchen
EP1100117A3 (en) A surface treatment method for a silicon wafer
KR900000985A (ko) 반도체 장치의 제조 방법
KR870011676A (ko) 실리콘질화막의 건식엣칭방법 및 건식엣칭장치
JPS5735323A (en) Removal of photoresist film
JPS5414165A (en) Selective oxidation method for semiconductor substrate
FI800816A (fi) Metod och apparat foer rengoering av avloppsvatten
KR910019147A (ko) 폴리실리콘층의 에칭전 Dip에칭처리방법
KR910001904A (ko) 다결정실리콘 산화에 의한 ldd 형성방법
CA2160039A1 (en) Method for separating sulfone from a hydrocarbon stream having a small concentration of sulfone
JPS6394627A (ja) 半導体の製造装置
SU702356A2 (ru) Устройство дл регулировани давлени и уровн жидкости
JPS5522325A (en) Waste liquid treatment using active sludge
JPS57211235A (en) Manufacture of semiconductor device
KR940002960A (ko) 식각 지연 방법
KR980003884A (ko) 레지스트 패턴 형성방법
KR920020742A (ko) 반도체 장치의 기준 전극 제조방법
JPS5363668A (en) Apparatus for settling separation
KR880003392A (ko) 산화물 분리방법
GB2190368B (en) Method of removing film from dendritic web silicon