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DE60037996D1 - Herstellungsverfahren für eine III-V Nitridschicht und für ein Substrat - Google Patents

Herstellungsverfahren für eine III-V Nitridschicht und für ein Substrat

Info

Publication number
DE60037996D1
DE60037996D1 DE60037996T DE60037996T DE60037996D1 DE 60037996 D1 DE60037996 D1 DE 60037996D1 DE 60037996 T DE60037996 T DE 60037996T DE 60037996 T DE60037996 T DE 60037996T DE 60037996 D1 DE60037996 D1 DE 60037996D1
Authority
DE
Germany
Prior art keywords
iii
substrate
manufacturing
nitride layer
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037996T
Other languages
English (en)
Other versions
DE60037996T2 (de
Inventor
Satoshi Tomioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60037996D1 publication Critical patent/DE60037996D1/de
Publication of DE60037996T2 publication Critical patent/DE60037996T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60037996T 1999-12-08 2000-12-07 Herstellungsverfahren für eine III-V Nitridschicht und für ein Substrat Expired - Lifetime DE60037996T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP37642299A JP3591710B2 (ja) 1999-12-08 1999-12-08 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法
JP37642299 1999-12-08

Publications (2)

Publication Number Publication Date
DE60037996D1 true DE60037996D1 (de) 2008-03-27
DE60037996T2 DE60037996T2 (de) 2009-02-26

Family

ID=18507116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037996T Expired - Lifetime DE60037996T2 (de) 1999-12-08 2000-12-07 Herstellungsverfahren für eine III-V Nitridschicht und für ein Substrat

Country Status (6)

Country Link
US (1) US6656269B2 (de)
EP (1) EP1107296B1 (de)
JP (1) JP3591710B2 (de)
KR (1) KR100743209B1 (de)
DE (1) DE60037996T2 (de)
TW (1) TW473798B (de)

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US6673149B1 (en) * 2000-09-06 2004-01-06 Matsushita Electric Industrial Co., Ltd Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
JP2002222771A (ja) 2000-11-21 2002-08-09 Ngk Insulators Ltd Ｉｉｉ族窒化物膜の製造方法、ｉｉｉ族窒化物膜の製造用下地膜、及びその下地膜の製造方法
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
JP2004525518A (ja) * 2001-03-30 2004-08-19 テクノロジーズ アンド デバイス インターナショナル インコーポレイテッド Ｈｖｐｅ技術を使用したサブミクロンｉｉｉ属窒化物構造を成長させる方法および装置
TW544956B (en) * 2001-06-13 2003-08-01 Matsushita Electric Ind Co Ltd Nitride semiconductor, production method therefor and nitride semiconductor element
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
EP1422748A1 (de) * 2001-08-01 2004-05-26 Nagoya Industrial Science Research Institute Gruppe-iii-nitrid-halbleiterfilm und verfahren zu seiner herstellung
US6969426B1 (en) * 2002-02-26 2005-11-29 Bliss David F Forming improved metal nitrides
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
FR2851079B1 (fr) * 2003-02-12 2005-08-26 Soitec Silicon On Insulator Structure semi-conductrice sur substrat a forte rugosite
US6989314B2 (en) * 2003-02-12 2006-01-24 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure and method of making same
KR100531178B1 (ko) * 2003-07-08 2005-11-28 재단법인서울대학교산학협력재단 중간 질화물 반도체 에피층의 금속상 전환을 이용한질화물 반도체 에피층 성장 방법
JP4457609B2 (ja) * 2003-08-26 2010-04-28 豊田合成株式会社 窒化ガリウム（ＧａＮ）の製造方法
JP4559190B2 (ja) * 2003-11-06 2010-10-06 昭和電工株式会社 化合物半導体素子
JP2005209803A (ja) * 2004-01-21 2005-08-04 Sumitomo Electric Ind Ltd ＧａＮ結晶基板の製造方法
JP4720125B2 (ja) * 2004-08-10 2011-07-13 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法並びにｉｉｉ−ｖ族窒化物系半導体
US20060049418A1 (en) * 2004-09-03 2006-03-09 Tzi-Chi Wen Epitaxial structure and fabrication method of nitride semiconductor device
DE102004048454B4 (de) * 2004-10-05 2008-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
KR101094409B1 (ko) 2004-12-28 2011-12-15 삼성코닝정밀소재 주식회사 질화갈륨 단결정 후막의 제조 방법
US20090140286A1 (en) * 2005-04-07 2009-06-04 Showa Denko K.K. Production Method of Group III Nitride Semiconductor Element
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
KR100770583B1 (ko) * 2005-06-16 2007-10-26 주식회사 이츠웰 질화물 반도체 기판을 이용한 수직 전극형 발광 소자 및그의 제조방법
JP2007059850A (ja) * 2005-08-26 2007-03-08 Ngk Insulators Ltd Ｉｉｉ族窒化物成膜用基板及びその製造方法並びにそれを用いた半導体装置
TWI408264B (zh) * 2005-12-15 2013-09-11 Saint Gobain Cristaux & Detecteurs 低差排密度氮化鎵（ＧａＮ）之生長方法
JP4187175B2 (ja) * 2006-03-13 2008-11-26 国立大学法人東北大学 窒化ガリウム系材料の製造方法
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
TWI305006B (en) * 2006-08-31 2009-01-01 Ind Tech Res Inst Nitride semiconductor and method for forming the same
JP2009190936A (ja) * 2008-02-14 2009-08-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の製造方法
US8846482B2 (en) 2011-09-22 2014-09-30 Avogy, Inc. Method and system for diffusion and implantation in gallium nitride based devices
JP5319810B2 (ja) 2012-03-08 2013-10-16 株式会社東芝 窒化物半導体層の製造方法
JP6024533B2 (ja) 2012-03-28 2016-11-16 日亜化学工業株式会社 サファイア基板及びその製造方法並びに窒化物半導体発光素子
KR102122366B1 (ko) 2013-06-14 2020-06-12 삼성전자주식회사 질화물 반도체 박막 제조방법 및 이를 이용한 질화물 반도체 소자 제조방법
US10706426B2 (en) 2014-04-30 2020-07-07 Ncr Corporation Automated remote transaction assistance
NL2012877B1 (en) * 2014-05-23 2016-03-15 Onderzoekscentrum Voor Aanwending Van Staal N V Electric arc welding method.
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
KR20180004551A (ko) * 2016-07-04 2018-01-12 포항공과대학교 산학협력단 금속 기판 패터닝을 통한 질화붕소 화합물 반도체의 선택적 영역 성장 방법
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
JPWO2021075369A1 (de) * 2019-10-18 2021-04-22

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JP2002510275A (ja) * 1997-07-03 2002-04-02 シービーエル テクノロジーズ エピタキシャル層中の欠陥の除去
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
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Also Published As

Publication number Publication date
EP1107296A2 (de) 2001-06-13
KR20010062188A (ko) 2001-07-07
TW473798B (en) 2002-01-21
DE60037996T2 (de) 2009-02-26
JP2001168045A (ja) 2001-06-22
US6656269B2 (en) 2003-12-02
JP3591710B2 (ja) 2004-11-24
US20010000733A1 (en) 2001-05-03
EP1107296B1 (de) 2008-02-13
EP1107296A3 (de) 2005-04-06
KR100743209B1 (ko) 2007-07-26

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