CN114774880A - Chemical vapor deposition system and equipment with inverted substrate table - Google Patents
Chemical vapor deposition system and equipment with inverted substrate table Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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Abstract
The invention provides a chemical vapor deposition system with an inverted substrate table and equipment thereof, which comprise a substrate table lifting component, a reaction cavity, microwave feed-in glass and a microwave feed-in cavity which are sequentially arranged from top to bottom, wherein one end of the reaction cavity is sealed by the substrate table lifting component, the other end of the reaction cavity is sealed by the microwave feed-in glass and the microwave feed-in cavity, the substrate table component is arranged in the reaction cavity and is hermetically connected with the substrate table lifting component, and a plasma excited by microwaves is positioned under the substrate table. According to the invention, the plasma is formed under the substrate table through the inversion of the substrate table, ionized reaction gas can reach the diamond growth area at the first time due to the influence of the updraft, and meanwhile, the possibility of doping a large amount of un-ionized reaction gas is eliminated near the diamond growth area, so that the growth efficiency of diamond can be obviously improved, the uniformity of ionized gas near the diamond growth area can be improved, and the growth quality of diamond is improved.
Description
Technical Field
The invention belongs to the technical field of diamond growth, and particularly relates to a chemical vapor deposition system with an inverted substrate table and equipment comprising the chemical vapor deposition system with the inverted substrate table.
Background
This section provides background information related to the present application that is not necessarily prior art.
The diamond has physical and chemical excellent characteristics of high hardness, high elastic modulus, high thermal conductivity, high wear resistance, high thermal conductivity, high chemical stability, high optical transparency, low thermal expansion coefficient and the like, so that the diamond can be applied to a plurality of fields, and the electrical properties of the semiconductor, namely wide band gap, high breakdown electric field, high carrier mobility and high thermal conductivity, make the diamond become one of the most promising semiconductor materials of solid-state power devices, so that the diamond is known as an ultimate semiconductor, and the application of the diamond in the fields of micro-electro-mechanical systems, acoustic devices, semiconductor devices, power devices, detectors, biomedical science, quantum computing communication and the like increasingly receives attention from academia and industry, so that the diamond has wide application prospect, the status and the importance of the diamond in the scientific field increase day by day, and the diamond is a higher-performance scientific research tool.
As for growth technology, with the development of large-sized synthetic diamond material preparation technology, especially with the intensive research of High Temperature and High Pressure (HTHP) method Chemical Vapor Deposition (CVD) method, the requirement for equipment is very severe to obtain larger-sized HPHT diamond, which results in a substantial increase in equipment cost. The CVD method is a preferred scheme with high purity and large area because the synthesis of the diamond by the CVD method breaks the limitation of equipment on the size of the substrate and provides conditions for the growth of the diamond with large area. Currently, the commonly used CVD method for synthesizing diamond mainly includes Microwave Plasma CVD (MPCVD), hot wire CVD, flame combustion CVD, and dc arc plasma CVD.
The Microwave Plasma Chemical Vapor Deposition (MPCVD) diamond growth technology generally adopts metal stainless steel as a cavity, and due to the advantages of no pollution of microwave energy, pure gas raw materials, no doping of catalysts and impurities and the like, the quality of diamond is improved, and the method is distinguished in a plurality of diamond preparation methods, becomes one of the most promising technologies for preparing large-size and high-quality diamond, and greatly expands the application potential of diamond materials in the high-tech field.
The MPCVD working principle is that firstly the reaction cavity is vacuumized, the tightness of the reaction cavity is always kept, the microwave generated by the microwave generator enters the reaction cavity, the mixed reaction gas of carbon source gas and hydrogen is introduced, glow discharge is generated in the reaction cavity under the excitation of the microwave, the reaction gas is ionized and forms various active groups, then the various active groups generate a series of chemical reactions on the diamond and gradually generate adsorption, desorption, migration, diffusion and deposition on the surface of the diamond, and finally the diamond is obtained.
However, in the prior art, since the substrate stage in the MPCVD apparatus is located right below the plasma excited by the microwave, i.e., the diamond growth region is located right below the plasma, and the ionized reaction gas tends to rise during the diamond growth process, i.e., the ionized reaction gas needs to go through the repeated cycle of rising and falling to finally reach the diamond surface for adsorption, desorption, migration, diffusion and deposition, the diamond growth efficiency is affected. In addition, the ionized gas is doped with a large amount of non-ionized reaction gas in the process of rising and falling, so that the ionized gas on the surface of the diamond is not uniform, and the growth of high-quality diamond is adversely affected.
Disclosure of Invention
The invention mainly has two purposes, the first purpose is to provide a chemical vapor deposition system with an inverted substrate table, so as to solve the technical problems of low growth efficiency and non-uniform gas ionized on the surface of diamond in the diamond growth process in the prior art, and the second purpose is to provide equipment comprising the chemical vapor deposition system with the inverted substrate table.
To achieve the first object, the present invention provides a chemical vapor deposition system in which a substrate stage is inverted. The microwave plasma reactor comprises a substrate table lifting component, a reaction cavity, microwave feed-in glass and a microwave feed-in cavity which are sequentially arranged from top to bottom, wherein one end of the reaction cavity is sealed by the substrate table lifting component, the other end of the reaction cavity is sealed by the microwave feed-in glass and the microwave feed-in cavity, the substrate table component is arranged in the reaction cavity and is hermetically connected with the substrate table lifting component, and a microwave excited plasma is positioned under the substrate table component.
The substrate table lifting component is used for realizing the lifting function of the substrate table component, and as is well known, the MPCVD method for growing diamond needs to maintain a certain temperature range, and the growth of diamond is not facilitated when the temperature is too high or too low. After the diamond grows for a period of time, the thickness of the diamond increases, so that the distance between the diamond on the substrate table assembly and the plasma is closer and closer, and the plasma raises the temperature of the substrate table assembly, which is not beneficial to the growth of the diamond. The substrate table lifting assembly solves the above problems, and when the diamond grows for a certain period of time, the substrate table lifting assembly is contracted and the substrate table assembly is moved upward, so that the substrate table assembly and the plasma are maintained within a predetermined distance range. The reaction cavity is a container for exciting reaction gas to form plasma by microwave energy in the diamond growth process; the microwave feed glass may be microwave transmissive for feeding of microwave energy; the microwave feed-in cavity is a channel for allowing microwaves emitted by a microwave source to enter the reaction cavity; the substrate table assembly is for carrying a substrate.
One end of the reaction cavity is sealed by the substrate table lifting assembly, the other end of the reaction cavity is sealed by the microwave feed-in glass and the microwave feed-in cavity, the substrate table assembly is hermetically connected with the substrate table lifting assembly, and through the sealing, the lifting function of the substrate table assembly is realized while the formation of a diamond growth environment isolated from the outside is ensured.
The plasma excited by the microwave is positioned right below the substrate table assembly, so that the ionized reaction gas is promoted to reach the diamond growth area at the first time by the ascending motion of the ionized reaction gas, meanwhile, the possibility of doping a large amount of un-ionized reaction gas is eliminated near the diamond growth area, the growth efficiency of the diamond can be obviously improved, the uniformity of the ionized gas near the diamond growth area is improved, and the growth quality of the diamond is improved.
Furthermore, the substrate table lifting assembly comprises a vacuum corrugated pipe, a movable disc, a fixed disc, a reaction cavity body chassis and a screw rod, wherein two ends of the vacuum corrugated pipe are respectively in sealing connection with the movable disc and the reaction cavity body chassis, the reaction cavity body chassis is in sealing connection with the reaction cavity body, one end of the screw rod is movably connected with the reaction cavity body chassis, the movable disc and the fixed disc are provided with internal threads, and the screw rod is respectively in threaded connection with the movable disc and the fixed disc.
The vacuum corrugated pipe is used in an ultrahigh vacuum system, can realize bending, stretching and eccentric functions, and is required to have reliable sealing performance and service life, two ends of the vacuum corrugated pipe are respectively connected with the movable disc and the reaction cavity body chassis in a bolt sealing manner, the reaction cavity body chassis is connected with the reaction cavity body in a sealing manner, and in order to realize better sealing performance, a knife edge sealing manner can be adopted among the movable disc, the vacuum corrugated pipe, the reaction cavity body chassis and the reaction cavity body; the fixed disc is fixed with other parts of the equipment and is immovable; the screw rod can convert the rotary motion into the linear motion through the matching relation with the movable disc and the fixed disc.
The lifting principle of the substrate table lifting assembly can be simply described as follows: the screw rod rotates under the action of external force, the screw rod can drive the movable disc to move up and down, the vacuum corrugated pipe keeps vacuum property in the stretching process, meanwhile, the contradiction between motion and vacuum tightness is overcome, and the tightness between a reaction environment in the reaction cavity and the external environment is ensured.
Further, substrate platform lifting unit still includes the dead lever, dead lever one end and reaction cavity chassis fixed connection, the other end and fixed disk fixed connection, the activity dish is equipped with the mating holes, and the dead lever corresponds and passes the mating holes.
In order to better ensure that the fixed disc keeps a static state and simultaneously realize the stable movement of the movable disc, the substrate table lifting assembly is also provided with a fixed rod. Because the reaction cavity is in the quiescent condition, and reaction cavity chassis fixed connection, so the fixed disk is also in the quiescent condition, and the activity dish is equipped with the mating holes, and the dead lever corresponds and passes the mating holes, and the mating holes has guaranteed that the activity dish can carry out stable removal on the dead lever.
Further, the substrate table assembly comprises a substrate table and a substrate table support, and the substrate table support is connected with the movable disc in a sealing mode.
The substrate table is used for bearing the substrate and adjusting the temperature of the substrate, the substrate table support is used for supporting the substrate table and providing a waterway temperature control system channel, the substrate table support is connected with the movable disc in a sealing mode, the substrate table can be guaranteed to move along with the movement of the movable disc, and meanwhile the sealing performance of a reaction environment is guaranteed.
Further, a substrate fixing module is arranged on the substrate table.
In the present invention, the plasma is located right below the substrate stage, and the substrate is separated from the substrate stage by the action of gravity, so that a substrate fixing module is required.
Furthermore, the substrate fixing module is a plurality of L-shaped fixing pieces fixedly arranged at the edge of the substrate table, and the included angle between the connecting line of at least 2 adjacent L-shaped fixing pieces and the center of the substrate table is more than or equal to 180 degrees.
The edge of the substrate table is provided with a plurality of L-shaped fixing pieces, so that the substrate can be fixed on the substrate table, and the growth of diamond is not influenced; the included angle between the connecting line of at least 2 adjacent L-shaped fixing pieces and the center of the substrate table is more than or equal to 180 degrees, so that the substrate can be conveniently placed on the substrate table.
Further, the edge of the L-shaped fixing piece close to the plasma is rounded.
The round angle is set because microwave energy is enriched at edge edges and sharp corners, so that the uniformity of plasma is influenced, microwave energy waste is formed, and adverse effects are brought to high-quality growth of diamond.
Furthermore, the L-shaped fixing piece is made of elastic metal.
In the reaction cavity, the L-shaped fixing piece is positioned near the plasma, and the temperature of the plasma is very high, so that the L-shaped fixing piece is made of metal, and the elasticity is used for keeping the substrate and the substrate table in a tightly attached state, so that the temperature of the substrate is kept in a range required by the growth of diamond.
Further, the substrate table is provided with a plurality of substrate table depressions, and the substrate fixing module is a suction cup disposed in the substrate table depression.
The substrate fixing module adopts another technical concept that a plurality of substrate platform depressions are arranged on the substrate platform, suckers are arranged in the substrate platform depressions, and gas circuit pipelines of the suckers can be arranged through a substrate platform support. During operation, the substrate is attached to the substrate table, the suction disc performs suction operation, so that the substrate can be adsorbed on the substrate table due to the air pressure difference between the inside and the outside of the suction disc, and the problem that the substrate falls off from the substrate table under the action of gravity is solved.
To achieve the second object, the present invention also provides an apparatus including the above substrate table-inverted chemical vapor deposition system.
According to the technical scheme, the invention has the following beneficial effects:
1. in the invention, the plasma excited by the microwave is positioned right below the substrate table component, so that the ionized reaction gas is promoted to reach a diamond growth area at the first time by the ascending motion of the ionized reaction gas, and meanwhile, the possibility of doping a large amount of un-ionized reaction gas is eliminated near the diamond growth area, thus the growth efficiency of the diamond can be obviously improved, the uniformity of the ionized gas near the diamond growth area can be improved, and the growth quality of the diamond is improved;
2. the substrate table lifting assembly is arranged to ensure that the substrate table and the plasma are kept within a certain distance range, so that the diamond is ensured to grow within a preset temperature range, good sealing performance of a reaction environment is ensured, and the contradiction between motion and vacuum sealing performance is solved;
3. the substrate fixing module is arranged on the substrate table, so that the substrate is effectively prevented from being separated from the substrate table under the action of gravity;
4. the edge of the L-shaped fixing piece close to the plasma is provided with the round angle, so that the phenomenon that microwave energy is enriched at the edge angle and the sharp angle of the edge of the L-shaped fixing piece to influence the uniformity of the plasma is avoided, the microwave energy is saved, and the high-quality growth of the diamond is realized;
5. the elastic metal of the L-shaped fixing piece maintains the stability of the L-shaped fixing piece, ensures that the substrate and the substrate table are in a close fit state, and is beneficial to keeping the temperature of the substrate within a range required by diamond growth.
Drawings
FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition system with an inverted substrate table according to the present invention;
FIG. 2 is a schematic view of a substrate table lift assembly and substrate table assembly provided in accordance with the present invention;
FIG. 3 is a schematic view of an L-shaped fastener according to the present invention;
FIG. 4 is a schematic view of an L-shaped fastener according to the present invention;
FIG. 5 is a schematic view of an L-shaped fastener holding a substrate according to the present invention;
fig. 6 is a schematic structural view of a substrate fixing module according to the present invention.
The device comprises a substrate table assembly 1, a substrate table 11, an L-shaped fixing piece 111, a substrate table recess 112, a sucker 113, a substrate 114, a substrate table support 12, a reaction cavity 2, microwave feed-in glass 3, an observation window 4, a substrate table lifting assembly 5, a vacuum corrugated pipe 51, a movable plate 52, a fixed plate 53, a reaction cavity chassis 54, a fixing rod 55 and a screw 56, wherein the substrate table lifting assembly is characterized in that the vacuum corrugated pipe is arranged on the substrate table lifting assembly, the movable plate 52 is arranged on the substrate table lifting assembly, the fixed plate 53 is arranged on the reaction cavity chassis 54, and the fixing rod 55 is arranged on the substrate table lifting assembly 56.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and the related technical features in the embodiments in the present application may be combined with each other. It should be noted that the following detailed description is intended to provide further explanation of the disclosure, and unless otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The invention is described in detail below, with the same or similar reference numerals indicating the same or similar parts or having the same or similar functions throughout. In addition, if the description of the prior art documents or other prior art is not necessary for the technical solution provided by the present invention, it has been omitted in the present invention. The embodiments described in the present invention are for illustrative purposes only and are not intended to limit the technical scope of the present invention.
In the prior art, because a substrate table in the MPCVD equipment is positioned right below a plasma excited by microwaves, namely, diamond grows right below the plasma, and ionized reaction gas in a reaction cavity tends to rise, namely, the ionized reaction gas can finally reach the surface of the diamond to be adsorbed, desorbed, migrated, diffused and deposited through the repeated circulation process of rising and falling, and the growth efficiency of the diamond is influenced. In addition, the ionized gas is doped with a large amount of non-ionized reaction gas in the process of rising and falling, so that the ionized gas on the surface of the diamond is not uniform, and the growth of high-quality diamond is adversely affected. The invention provides a chemical vapor deposition system with an inverted substrate stage and equipment.
The technical solution of the present invention and how to solve the above technical problems are described in detail with specific embodiments below.
Referring to fig. 1, in order to achieve the first object, the chemical vapor deposition system with the inverted substrate table includes a substrate table lifting assembly 5, a reaction chamber 2, a microwave feed-in glass 3 and a microwave feed-in chamber 6, which are sequentially arranged from top to bottom, one end of the reaction chamber 2 is sealed by the substrate table lifting assembly 5, the other end is sealed by the microwave feed-in glass 3 and the microwave feed-in chamber 6, a substrate table assembly 1 is arranged in the reaction chamber 2, the substrate table assembly 1 is hermetically connected with the substrate table lifting assembly 5, and a microwave-excited plasma 7 is located right below the substrate table assembly 1.
In addition, in order to observe the growth of diamond, the reaction cavity 2 is provided with an observation window, so that the growth state of diamond in the reaction cavity 2 can be observed at any time.
The substrate table lifting component 5 is used for realizing the lifting function of the substrate table component 1, and as is well known, the MPCVD method for growing diamond needs to maintain a certain temperature range, and the growth of diamond is not facilitated when the temperature is too high or too low. After the diamond grows for a period of time, the thickness of the diamond will increase, so that the distance between the diamond on the substrate table assembly 1 and the plasma 7 becomes closer and closer, and the plasma 7 raises the temperature of the substrate table assembly 1, which is not beneficial to the growth of the diamond. The substrate table elevation system 5 can solve the above problem in that, when the diamond grows for a certain period of time, the substrate table elevation assembly 5 is contracted and the substrate table assembly 1 is moved upward so that the substrate table assembly 1 and the plasma 7 are maintained within a predetermined distance range. The reaction cavity 2 is a container for exciting reaction gas by microwave energy to form plasma 7 in the diamond growth process; the microwave feed glass 3 may be microwave transparent for feeding of microwave energy; the microwave feed-in cavity 6 is a channel for the microwave emitted by the microwave source to enter the reaction cavity 2; the substrate table assembly 1 is used to carry a substrate.
One end of the reaction cavity 2 is sealed by a substrate table lifting component 5, the other end of the reaction cavity is sealed by microwave feed-in glass 3 and a microwave feed-in cavity 6, the substrate table component 1 is hermetically connected with the substrate table lifting component 5, and through the sealing, the lifting function of the substrate table component 1 is realized while the diamond growth environment is isolated from the outside.
The plasma 7 excited by the microwave is positioned under the substrate table, so that the ionized reaction gas is promoted to reach a diamond growth area at the first time by the ascending motion of the ionized reaction gas, and the possibility of doping a large amount of unionized reaction gas is eliminated near the diamond growth area, thereby obviously improving the growth efficiency of the diamond, improving the uniformity of the ionized gas near the diamond growth area and improving the growth quality of the diamond.
The plasma is an electric neutral substance consisting of various particles with different properties such as cations, neutral particles, free electrons and the like, the plasma is obtained by exciting reaction gas by a microwave field, the temperature from the center to the edge of the plasma is gradually reduced, and the central position of the plasma can reach more than 2500 ℃; the microwave feed glass is quartz glass.
In some embodiments, as shown in fig. 1 and 2, the substrate stage lifting assembly 5 includes a vacuum bellows 51, a movable plate 52, a fixed plate 53, a reaction chamber chassis 54 and a screw 56, two ends of the vacuum bellows 51 are respectively connected with the movable plate 52 and the reaction chamber chassis 54 in a sealing manner, the reaction chamber chassis 54 is connected with the reaction chamber 2 in a sealing manner, one end of the screw 56 is movably connected with the reaction chamber chassis 54, the movable plate 52 and the fixed plate 53 are provided with internal threads, and the screw 56 is respectively connected with the movable plate 52 and the fixed plate 53 in a threaded manner.
The vacuum bellows 51 is a bellows which can realize bending, expansion and eccentricity in an ultrahigh vacuum system and requires reliable sealing performance and service life, two ends of the vacuum bellows 51 are respectively connected with the movable disc 52 and the reaction cavity chassis 54 in a bolt sealing manner, the reaction cavity chassis 54 is connected with the reaction cavity 2 in a bolt sealing manner, and in order to realize better sealing performance, a knife edge sealing manner can be adopted among the movable disc 52, the vacuum bellows 51, the reaction cavity chassis 54 and the reaction cavity 2; the fixed disc 53 is fixed with other parts of the device and is not movable; through the matching relationship between the screw 56 and the movable disc 52 and the fixed disc 53, when the screw 56 is rotated by an external force, the fixed disc 53 is immovable because the screw 56 is in threaded engagement with the movable disc 52 and the fixed disc 53, respectively, and therefore, the screw 56 causes the movable disc 52 to move up and down in the direction of the screw 56, i.e., the screw 56 converts the rotational motion into a linear motion.
It should be noted that the knife-edge sealing means that the sealing element is matched with a protrusion and a groove with a triangular section, the purpose of sealing is achieved by extruding a metal gasket in the middle of a part to deform the metal gasket, and the vacuum tightness of the reaction cavity can be greatly improved by adopting the knife-edge sealing.
The lifting principle of the substrate table lifting assembly 5 can be described simply as: the screw 56 rotates under the action of external force, the screw 56 drives the movable disc 52 to move up and down, and the vacuum bellows 51 overcomes the contradiction between motion and vacuum tightness while keeping vacuum property in the expansion process, so that the tightness between the reaction environment in the reaction cavity 2 and the external environment is ensured.
It should be noted that the external force for driving the screw 56 to rotate can be provided by a motor or the like, specifically, a rotational force can be provided.
Further, the substrate table lifting assembly 5 further comprises a fixing rod 55, one end of the fixing rod 55 is fixedly connected with the reaction cavity base plate 54, the other end of the fixing rod 55 is fixedly connected with the fixed disk 53, the movable disk 52 is provided with a matching hole, and the fixing rod 55 correspondingly penetrates through the matching hole.
To better ensure that the stationary platen 53 remains stationary while the movable platen 52 is moved in a stable manner, the substrate table lift assembly 5 is further provided with a stationary bar 55. Because the reaction chamber 2 is in a static state, and the reaction chamber 2 is fixedly connected with the reaction chamber chassis 54, the fixed disk 53 is also in a static state, the movable disk 52 is provided with a matching hole, the fixed rod 55 correspondingly passes through the matching hole, and the matching hole ensures that the movable disk 52 can stably move along the fixed rod 55.
Further, the substrate table assembly 1 comprises a substrate table 11 and a substrate table support 12, the substrate table support 12 being sealingly connected to the movable plate 52.
The substrate table 11 is used for bearing the substrate and adjusting the temperature of the substrate, the substrate table support 12 is used for supporting the substrate table 11 and providing a channel of a water path temperature control system, and the substrate table support 12 and the movable disc 52 are in sealed connection, so that the substrate table 11 can move along with the movement of the movable disc 52, and meanwhile, the sealing performance of a reaction environment is ensured.
This is because the plasma 7 is located just below the substrate stage 11, and the substrate is separated from the substrate stage by gravity, so that a substrate fixing module needs to be provided.
In some embodiments, the substrate fixing module is a plurality of L-shaped fixing members 111 fixedly disposed at the edge of the substrate stage 11, and an included angle between a connecting line of at least 2 adjacent L-shaped fixing members 111 and the center of the substrate stage 11 is greater than or equal to 180 degrees.
The edge of the substrate table 11 is provided with a plurality of L-shaped fixing pieces 111, so that the substrate can be fixed on the substrate table 11, the edge of the L-shaped fixing pieces does not influence the growth of diamond, and the included angle between the connecting line of at least 2L-shaped fixing pieces 111 and the center of the substrate table 11 is larger than or equal to 180 degrees so as to be convenient for placing the substrate on the substrate table 11.
In some embodiments, as shown in fig. 3, 2L-shaped fixing members 111 are disposed at the edge of the substrate stage 11, and the included angle between the 2L-shaped fixing members 111 and the central connecting line of the substrate stage 11 is 180 degrees.
In some embodiments, which are not shown in the drawings, 2L-shaped fixing members 111 are disposed at the edge of the substrate stage 11, and the included angle between the 2L-shaped fixing members 111 and the central line of the substrate stage 11 is 180 degrees.
In another embodiment, not shown, the substrate stage 11 is provided with 3L-shaped fixing members 111 at the edge, the included angle between the first L-shaped fixing member and the second L-shaped fixing member is 45 degrees, the included angle between the second L-shaped fixing member and the third L-shaped fixing member is 45 degrees, and the included angle between the first L-shaped fixing member and the third L-shaped fixing member is 180 degrees.
In some embodiments, as shown in FIG. 4, the edges of the L-shaped fixtures 111 near the plasma 7 are rounded.
The round angle is set because microwave energy is enriched at the edges and corners, thereby affecting the uniformity of plasma, not only forming the waste of microwave energy, but also bringing adverse effect to the high-quality growth of diamond.
In some embodiments, the L-shaped fixing element 111 is made of an elastic metal.
In the reaction chamber 2, the L-shaped fixing piece 111 is positioned near the plasma 7, and the temperature of the plasma 7 is high, so the L-shaped fixing piece 111 is made of metal, and the elasticity is used for keeping the substrate 114 and the substrate table 11 in a close fit state, which is beneficial to keeping the substrate temperature within a range required by diamond growth.
For ease of understanding, as shown in fig. 5, an L-shaped fixing member 111 fixes a substrate 114 on the substrate stage 11. The substrate 114 is bonded to the substrate stage 11, and the L-shaped fixing member 111 fixes the substrate 114 to prevent the substrate 114 from falling off the substrate stage 111.
In some embodiments, as shown in FIG. 6, the substrate table 11 is provided with a plurality of substrate table recesses 112, and the substrate holding module is a chuck 113 disposed in the substrate table recesses 112.
The substrate fixing module adopts another technical concept that a plurality of substrate table depressions 112 are formed in the substrate table, suction cups 113 are arranged in the substrate table depressions 112, and air passages of the suction cups can be arranged through the substrate table support 12. In operation, the substrate 114 is attached to the substrate stage 12, and the suction operation is performed by the suction cup 113, so that the substrate 114 is sucked onto the substrate stage 11 due to the difference between the internal and external air pressures of the suction cup 113, thereby overcoming the problem that the substrate 114 falls off from the substrate stage 11 by gravity.
To achieve the second object, the present invention also provides an apparatus including the above substrate table-inverted chemical vapor deposition system.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances such that, for example, embodiments of the application described herein may be implemented in sequences other than those illustrated or described herein.
It is to be understood that the above-described embodiments are only some of the embodiments of the present invention, and not all of them. The invention is not limited to the foregoing embodiments. Rather, the invention extends to any novel feature or any novel combination of features disclosed herein, which is capable of implementation in other forms without departing from the spirit or essential characteristics thereof. It is intended that the specification be considered as exemplary only, with a true scope of the invention being indicated by the following claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Other variants and modifications of the invention will be obvious to those skilled in the art in view of the foregoing description, and it is not intended to exhaust all embodiments. Obvious changes or modifications of the invention are also within the scope of the invention.
Furthermore, although the present specification describes embodiments, not every embodiment includes only a single technical solution, and those skilled in the art should make the specification as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims (10)
1. The utility model provides a chemical vapor deposition system that substrate platform was invertd, includes substrate platform lifting unit, reaction cavity, microwave feed-in glass and the microwave feed-in cavity that from top to bottom set gradually, reaction cavity one end by substrate platform lifting unit seals, the other end by microwave feed-in glass with the microwave feed-in cavity seals, be equipped with substrate platform subassembly in the reaction cavity, substrate platform subassembly with substrate platform lifting unit sealing connection, microwave excitation's plasma is located under the substrate platform subassembly.
2. The substrate table inverted chemical vapor deposition system of claim 1, wherein: the substrate table lifting assembly comprises a vacuum corrugated pipe, a movable disc, a fixed disc, a reaction cavity body chassis and a screw rod, wherein two ends of the vacuum corrugated pipe are respectively connected with the movable disc and the reaction cavity body chassis in a sealing mode, the reaction cavity body chassis is connected with the reaction cavity body chassis in a sealing mode, one end of the screw rod is movably connected with the reaction cavity body chassis, the movable disc and the fixed disc are provided with internal threads, and the screw rod is respectively connected with the movable disc and the fixed disc in a threaded mode.
3. The substrate table inverted chemical vapor deposition system of claim 2, wherein: the substrate table lifting assembly further comprises a fixing rod, one end of the fixing rod is fixedly connected with the reaction cavity base plate, the other end of the fixing rod is fixedly connected with the fixing plate, the movable plate is provided with a matching hole, and the fixing rod correspondingly penetrates through the matching hole.
4. The substrate table inverted chemical vapor deposition system of claim 2, wherein: the substrate table assembly comprises a substrate table and a substrate table support, and the substrate table support is connected with the movable disc in a sealing mode.
5. The substrate stage inverted chemical vapor deposition system of claim 4, wherein: and a substrate fixing module is arranged on the substrate table.
6. The substrate table inverted chemical vapor deposition system of claim 5, wherein: the substrate fixing module is composed of a plurality of L-shaped fixing pieces fixedly arranged at the edge of the substrate table, and at least 2 included angles between the L-shaped fixing pieces and the central connecting line of the substrate table are larger than or equal to 180 degrees.
7. The substrate stage inverted chemical vapor deposition system of claim 6, wherein: the edge of the L-shaped fixing piece close to the plasma is a round angle.
8. The substrate stage inverted chemical vapor deposition system of claim 7, wherein: the L-shaped fixing piece is made of elastic metal.
9. The substrate table inverted chemical vapor deposition system of claim 5, wherein: the substrate table is provided with a plurality of substrate table depressions, and the substrate fixing module is a sucker arranged in the substrate table depression.
10. An apparatus, comprising: the substrate stage inverted chemical vapor deposition system of any of claims 1-9.
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