CN114107956A - Variable-size bias sample table of high-power microwave plasma chemical vapor deposition equipment - Google Patents
Variable-size bias sample table of high-power microwave plasma chemical vapor deposition equipment Download PDFInfo
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- CN114107956A CN114107956A CN202111424381.2A CN202111424381A CN114107956A CN 114107956 A CN114107956 A CN 114107956A CN 202111424381 A CN202111424381 A CN 202111424381A CN 114107956 A CN114107956 A CN 114107956A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 28
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 134
- 239000011733 molybdenum Substances 0.000 claims abstract description 134
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 238000010276 construction Methods 0.000 claims abstract description 4
- 238000009434 installation Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 17
- 210000001503 joint Anatomy 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 229920001973 fluoroelastomer Polymers 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 150000002751 molybdenum Chemical class 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 abstract description 24
- 239000010432 diamond Substances 0.000 abstract description 24
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to the field of diamond film growth, and particularly relates to a bias sample table of variable-size high-power microwave plasma chemical vapor deposition equipment. The substrate of this sample platform is placed in the top recess of molybdenum platform, vertical installation molybdenum bolt is followed at the bottom center of molybdenum platform, the sample platform support that relative level set up from top to bottom, sample platform ceramic plate, with the relative left L type riser that sets up about, right side L type relates to the riser combination and is cuboid frame construction, the molybdenum platform passes through the molybdenum bolt fastening on the sample platform ceramic plate that the level set up, the sample platform support is fixed on the cavity bottom plate through the stay bolt of vertical setting, DC power source loops through the power cord, aviation sealing joint, the high temperature wire, the molybdenum bolt is connected with the molybdenum platform. The invention solves the problem of uniformity of negative bias voltage field increased on the surface of the substrate in the reaction cavity in the deposition process of the microwave method chemical vapor deposition diamond film, and prepares the high-quality diamond single crystal film with good uniformity, high purity and good crystallization form.
Description
Technical Field
The invention relates to the field of diamond film growth, in particular to a bias sample table of variable-size high-power microwave plasma chemical vapor deposition equipment.
Background
A Microwave Plasma Chemical Vapor Deposition (MPCVD) system is called MPCVD for short, and is a low-pressure Deposition technology, and MPCVD equipment based on the technology is key equipment for preparing diamond film materials. A range of key thin film materials can be synthesized using MPCVD, such as: diamond, graphene, silicon carbide, boron nitride and the like. The diamond film has excellent mechanical properties, and the thermal and optical properties of the diamond film, including thermal conductivity, spectral transmission range, thermal shock resistance and the like, are also very excellent. Due to the excellent properties, diamond is an excellent optical window material and can be used in the military fields of infrared thermal imaging missile hoods and the like. Optical windows made of diamond film materials may possess thermal shock resistance advantages of up to 106000W (MPa)1/2/cm, compared to the thermal shock resistance advantages of ZnS commonly used in infrared optical windows of only 550W (MPa)1/2A/cm, and therefore diamond films are particularly useful in the manufacture of various optical windows that operate in extremely harsh environments.
The MPCVD equipment is the first choice technology for preparing diamond film optical materials, but the MPCVD equipment has the main disadvantage that the deposition rate of the diamond film is low, and particularly the deposition rate is generally only about 0.5 mu m/h when preparing diamond film materials with larger areas. The large-size diamond film windows of 2 inches, 4 inches, 6 inches, 8 inches and the like which are urgently needed in the industrial and military fields have higher requirements on the thickness, generally more than 0.5mm, so that the common high-power MPCVD cannot meet the requirements for growing large-size diamond window materials. Research shows that negative bias voltage is added to the deposition substrate surface of the MPCVD device, which is helpful to improve the nucleation rate and the deposition rate of the diamond film on the substrate, and can realize the requirement of rapid growth of the diamond film window material.
Disclosure of Invention
The invention aims to solve the technical problem of providing a bias sample stage of variable-size high-power microwave plasma chemical vapor deposition equipment, wherein negative bias is added on the surface of a deposition substrate of an MPCVD device, substrates with different sizes can be ensured to use molybdenum stages with corresponding sizes, and the substrates with different sizes are all in the same bias electric field gas atmosphere, so that the requirement of rapid growth of diamond film window materials is met, and the consistency of film performance during batch coating is ensured.
The technical scheme adopted by the invention for solving the problems is as follows:
a variable-size high-power microwave plasma chemical vapor deposition apparatus bias sample stage, the sample stage comprising: support bolt, sample platform support, sample platform ceramic plate, molybdenum bolt, molybdenum platform, substrate, left L type riser, right L type riser, concrete structure is as follows:
the substrate is placed in the top recess of molybdenum platform, and vertical installation molybdenum bolt is followed at the bottom center of molybdenum platform, and sample platform support, sample platform ceramic plate that relative level set up about, the left L type riser that sets up relatively, right L type riser combination are cuboid frame construction, and the molybdenum platform passes through the molybdenum bolt fastening on the sample platform ceramic plate that the level set up, and the sample platform support is fixed on the cavity bottom plate through the stay bolt of vertical setting.
The variable-size high-power microwave plasma chemical vapor deposition equipment bias pressure sample stage, the cuboid frame structure, the sample stage ceramic plate, the molybdenum bolt, the molybdenum stage and the substrate are arranged in the reaction chamber, the reaction chamber is formed by a chamber upper cover, a sealing insulating pad, a chamber shell and a chamber bottom plate which are sequentially arranged from top to bottom, the chamber shell is arranged on the chamber bottom plate, the chamber upper cover is arranged at the top of the chamber shell, and the chamber shell and the chamber upper cover are hermetically connected through the sealing insulating pad.
According to the variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage, a chamber upper cover of a reaction chamber is physically grounded to be used as a zero potential, a positive pole of a direct-current bias power supply is connected with a molybdenum stage sequentially through a power line, an aviation sealing joint, a high-temperature lead and a molybdenum bolt, a negative pole of the direct-current bias power supply is physically grounded to be used as the zero potential through the power line to form a loop with the chamber upper cover of the reaction chamber, and the direct-current bias power supply is an adjustable negative bias power supply of-500-0V.
The variable-size high-power microwave plasma chemical vapor deposition equipment bias pressure sample stage is characterized in that a molybdenum bolt is a combined structure formed by coaxially integrating a molybdenum bolt rod, an upper end of the molybdenum bolt and an upper flat plate of the molybdenum bolt, the top of the molybdenum bolt rod is the upper flat plate of the molybdenum bolt, the top of the upper flat plate of the molybdenum bolt is the upper end of the molybdenum bolt, the center of the bottom of the molybdenum stage is provided with a threaded hole, the molybdenum bolt is in threaded connection with the threaded hole in the center of the bottom of the molybdenum stage through the upper end of the molybdenum bolt, the upper flat plate of the molybdenum bolt is positioned in a groove in the center of the top of a ceramic plate of the sample stage, the center of the ceramic plate of the sample stage is provided with a through hole, the molybdenum bolt rod penetrates through the ceramic plate of the sample stage, a sheet nut, an upper clamping bolt of a lead, one end of a high-temperature lead and a lower clamping bolt are sequentially arranged on the molybdenum bolt, the sheet nut and the molybdenum bolt are in threaded connection and fixed at the bottom of the sheet nut, the lower clamping bolt of the lead is in threaded connection with the molybdenum bolt, one end of the high-temperature lead is sleeved on the molybdenum bolt and is clamped and fixed through the upper clamping bolt of the lead and the lower clamping bolt of the lead, and the other end of the high-temperature lead is connected with the aviation sealing joint.
The variable-size high-power microwave plasma chemical vapor deposition equipment is characterized in that a sample platform is biased, a support of the sample platform is in butt joint with the end part of the horizontal short edge of the left L-shaped vertical plate and the end part of the horizontal short edge of the right L-shaped vertical plate through a seam allowance, and the lower end of the vertical long edge of the left L-shaped vertical plate and the lower end of the vertical long edge of the right L-shaped vertical plate are in butt joint with the support of the sample platform through a seam allowance.
The variable-size high-power microwave plasma chemical vapor deposition equipment is characterized in that a bias sample table is arranged on the variable-size high-power microwave plasma chemical vapor deposition equipment, a molybdenum table and a molybdenum bolt are made of high-purity molybdenum materials with the purity of more than 99.99 wt%, a sample table ceramic plate is made of high-purity aluminum oxide materials with the purity of more than 99.99 wt%, a sealing insulating pad is made of fluororubber, and an upper cover, a shell and a bottom plate of a chamber are made of aluminum alloy.
The variable-size high-power microwave plasma chemical vapor deposition equipment is used for biasing a sample table, the rated voltage of a high-temperature lead is 600V, the working temperature is-65-200 ℃, and an insulating layer is Teflon.
The design idea of the invention is as follows: the invention designs a bias sample stage of variable-size high-power microwave plasma chemical vapor deposition equipment, negative bias is added on the surface of a deposition substrate of an MPCVD device, molybdenum stages with corresponding sizes are designed under the action of a negative bias electric field aiming at substrates with different sizes, and samples with different sizes are all in the same bias electric field gas atmosphere according to a diamond-shaped nucleation mechanism and the action mechanism of the bias electric field, so that diamond film materials with consistent film performance can be rapidly grown on the samples with different sizes.
The invention is suitable for the bias sample table of the high-power microwave plasma chemical vapor deposition equipment with variable size, and has the following advantages and beneficial effects:
1. the invention uses the sample table ceramic plate to replace the original molybdenum substrate table on the basis of the original high-power MPCVD, the molybdenum table is arranged on the sample table ceramic plate, the molybdenum table is connected with a negative bias power line, a negative bias electric field is formed on the surface of the substrate, the nucleation rate of carbon ions on the surface of the substrate is improved, and the requirement of rapid growth of a diamond film window material is met.
2. The substrates with different sizes use the corresponding molybdenum tables with different sizes, so that different positions on the surfaces of the substrates with different sizes are in the same field intensity atmosphere, and the consistency of the film performance during large-area film coating is ensured.
3. The invention has the advantages of simple structure, easy manufacture, convenient and quick disassembly and replacement of the molybdenum table, low cost and high-efficiency and ideal laboratory and industrial application effects.
Drawings
FIG. 1 is a block diagram of the present invention.
In the figure: 1-upper cover of chamber; 2-sealing the insulating pad; 3-a chamber housing; 4-a chamber floor; 5-a dc bias supply; 6-power line; 7-aviation sealing joint; 8-high temperature wire; 9-stay bolts; 10-a sample stage support; 11-sample table ceramic plate; 12-molybdenum bolts; 13-a molybdenum stage; 14-a substrate; 15-left L-shaped vertical plate; 16-right L-shaped vertical plate.
Fig. 2 is a partially enlarged view of a portion a in fig. 1. In the figure: 11-sample table ceramic plate; 12-molybdenum bolts; 13-a molybdenum stage; 14-a substrate; 17-clamping the bolt on the wire; 18-wire lower clamping bolt; 19-molybdenum bolt shank; 20-molybdenum bolt upper end; 21-molybdenum bolt upper flat plate; 22-sheet nut.
3(a) -3 (d) are the main model external dimension diagrams of 4-dimension molybdenum tables of the bias sample table of the variable-dimension high-power microwave plasma chemical vapor deposition device. In which fig. 3(a) is a first molybdenum stage, fig. 3(b) is a second molybdenum stage, fig. 3(c) is a third molybdenum stage, and fig. 3(d) is a fourth molybdenum stage. In the figure: 13-a molybdenum stage; 23-a groove; 24-threaded hole.
The specific implementation mode is as follows:
hereinafter, specific embodiments of the present invention will be described in further detail with reference to the drawings and examples. With respect to the detailed description of these embodiments, it is to be understood that one skilled in the art can practice the invention and that other embodiments may be utilized and that changes and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In addition, although specific features of the invention are disclosed in the embodiments, such specific features can be modified as appropriate to achieve the functions of the invention.
As shown in fig. 1-3, the bias sample stage of the high power microwave plasma chemical vapor deposition apparatus of the present invention mainly comprises: the cavity upper cover 1, the sealed insulating pad 2, the cavity casing 3, the cavity bottom plate 4, direct current bias voltage power supply 5, power cord 6, aviation sealing joint 7, high temperature wire 8, stay bolt 9, sample platform support 10, sample platform ceramic plate 11, molybdenum bolt 12, molybdenum platform 13, substrate 14, left L type riser 15, right L type riser 16 etc. specific structure is as follows:
the substrate 14 is placed in a groove 23 at the top of the molybdenum table 13, a molybdenum bolt 12 is vertically installed at the center of the bottom of the molybdenum table 13, a sample table support 10 and a sample table ceramic plate 11 which are horizontally arranged relatively from top to bottom, and a cuboid frame structure is combined with a left L-shaped vertical plate 15 and a right L-shaped vertical plate 16 which are horizontally arranged relatively from left to right, the molybdenum table 13 is fixed on the sample table ceramic plate 11 which is horizontally arranged through the molybdenum bolt 12, and the sample table support 10 is fixed on the chamber bottom plate 4 through a supporting bolt 9 which is vertically arranged;
from the top down sets gradually cavity upper cover 1, sealed insulating pad 2, cavity casing 3, cavity bottom plate 4 constitute reaction chamber, and cavity casing 3 sets up on cavity bottom plate 4, and cavity upper cover 1 is installed at the top of cavity casing 3, through sealed insulating pad 2 sealing connection between cavity casing 3 and the cavity upper cover 1, cuboid frame construction and sample platform ceramic plate 11, molybdenum bolt 12, molybdenum platform 13, substrate 14 set up in reaction chamber.
The molybdenum bolt 12 is a combined structure of a molybdenum bolt rod 19, a molybdenum bolt upper end 20 and a molybdenum bolt upper flat plate 21 which are coaxial and integrated, the top of the molybdenum bolt rod 19 is the molybdenum bolt upper flat plate 21, the top of the molybdenum bolt upper flat plate 21 is the molybdenum bolt upper end 20, the bottom center of the molybdenum table 13 is provided with a threaded hole 24, the molybdenum bolt 12 is in threaded connection with the threaded hole 24 in the bottom center of the molybdenum table 13 through the molybdenum bolt upper end 20, the molybdenum bolt upper flat plate 21 is positioned in a groove in the top center of the sample table ceramic plate 11, the center of the sample table ceramic plate 11 is provided with a through hole, the molybdenum bolt rod 19 is arranged in the sample table ceramic plate 11 in a penetrating way, a sheet-shaped nut 22, a lead upper clamping bolt 17, one end of a high-temperature lead 8 and a lead lower clamping bolt 18 are sequentially arranged on the molybdenum bolt 12, the sheet-shaped nut 22 is in threaded connection with the molybdenum bolt 12 and fixed at the bottom of the sample table ceramic plate 11, the lead upper clamping bolt 17 is in threaded connection with the molybdenum bolt 12 and fixed at the bottom of the sheet-shaped nut 22, the lower clamping bolt 18 of the lead is connected with the molybdenum bolt 12 through threads, one end of the high-temperature lead 8 is sleeved on the molybdenum bolt 12 and is clamped and fixed through the upper clamping bolt 17 of the lead and the lower clamping bolt 18 of the lead, and the other end of the high-temperature lead 8 is connected with the aviation sealing joint 7.
The sample stage support 10 is in butt joint with the end part of the horizontal short side of the left L-shaped vertical plate 15 and the end part of the horizontal short side of the right L-shaped vertical plate 16 through rabbets, and the lower end of the vertical long side of the left L-shaped vertical plate 15 and the lower end of the vertical long side of the right L-shaped vertical plate 16 are in butt joint with the sample stage support 10 through rabbets.
3(a) -3 (d), the size of the main model of the molybdenum table with 4 sizes of the bias sample table of the variable-size high-power microwave plasma chemical vapor deposition device is shown in the shape and size diagrams. The center of the top of the molybdenum table 13 is provided with a groove 23, and the center of the bottom of the molybdenum table 13 is provided with a threaded hole 24. In fig. 3(a), the effective size Φ of the first molybdenum table groove 23 is 2 inches (52 ± 0.1mm), the effective size Φ of the second molybdenum table groove 23 is 4 inches (104 ± 0.1mm), the effective size Φ of the third molybdenum table groove is 6 inches (156 ± 0.1mm), and the effective size Φ of the fourth molybdenum table groove is 8 inches (208 ± 0.1 mm).
The molybdenum table 13 and the molybdenum bolt 12 are made of high-purity molybdenum materials with the purity of 99.99 wt% or more, the sample table ceramic plate 11 is made of high-purity alumina materials with the purity of 99.99 wt% or more, the sealing insulating pad 2 is made of fluororubber, and the chamber upper cover 1, the chamber shell 3 and the chamber bottom plate 4 are made of aluminum alloys.
The rated voltage of the high-temperature lead 8 is 600V, the working temperature is-65-200 ℃, and the insulating layer is Teflon.
The chamber upper cover 1 of the reaction chamber is physically grounded to be used as a zero potential, the anode of the direct current bias power supply 5 is connected with the molybdenum table 13 sequentially through the power line 6, the aviation sealing joint 7, the high-temperature wire 8 and the molybdenum bolt 12, the cathode of the direct current bias power supply 5 is physically grounded to be used as the zero potential to form a loop with the chamber upper cover 1 of the reaction chamber through the power line, and the direct current bias power supply 5 is an adjustable negative bias power supply with the voltage of-500-0V.
The result shows that the invention solves the problem of increasing the uniformity of the negative bias voltage field on the surface of the substrate in the reaction cavity in the deposition process of the microwave chemical vapor deposition diamond film, can ensure that the substrates with different sizes use molybdenum tables with corresponding sizes, and the molybdenum tables are convenient and quick to disassemble and replace, so that different positions on the surfaces of the substrates with different sizes are in the same field intensity atmosphere, thereby ensuring the consistency of the film performance in large-area film coating, and can deposit the diamond film on the substrates with different sizes to prepare the high-quality diamond single crystal film with different areas, good uniformity, high purity and good crystallization form.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (7)
1. A variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage is characterized in that the sample stage comprises: support bolt, sample platform support, sample platform ceramic plate, molybdenum bolt, molybdenum platform, substrate, left L type riser, right L type riser, concrete structure is as follows:
the substrate is placed in the top recess of molybdenum platform, and vertical installation molybdenum bolt is followed at the bottom center of molybdenum platform, and sample platform support, sample platform ceramic plate that relative level set up about, the left L type riser that sets up relatively, right L type riser combination are cuboid frame construction, and the molybdenum platform passes through the molybdenum bolt fastening on the sample platform ceramic plate that the level set up, and the sample platform support is fixed on the cavity bottom plate through the stay bolt of vertical setting.
2. The variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage according to claim 1, wherein the cuboid frame structure, the sample stage ceramic plate, the molybdenum bolt, the molybdenum stage and the substrate are arranged in the reaction chamber, a chamber upper cover, a sealing insulating pad, a chamber shell and a chamber bottom plate which are sequentially arranged from top to bottom form the reaction chamber, the chamber shell is arranged on the chamber bottom plate, the chamber upper cover is arranged at the top of the chamber shell, and the chamber shell is closely connected with the chamber upper cover through the sealing insulating pad.
3. The variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage according to claim 2, wherein a chamber upper cover of the reaction chamber is physically grounded as a zero potential, a positive electrode of a direct-current bias power supply is connected with the molybdenum stage sequentially through a power line, an aviation sealing joint, a high-temperature wire and a molybdenum bolt, a negative electrode of the direct-current bias power supply is physically grounded as a zero potential through the power line to form a loop with the chamber upper cover of the reaction chamber, and the direct-current bias power supply is an adjustable negative bias power supply of-500-0V.
4. The variable-size high-power microwave plasma chemical vapor deposition apparatus bias pressure sample stage according to claim 1, wherein the molybdenum bolt is a combined structure of a molybdenum bolt rod, an upper end of the molybdenum bolt and an upper flat plate of the molybdenum bolt, the top of the molybdenum bolt rod is the upper flat plate of the molybdenum bolt, the top of the upper flat plate of the molybdenum bolt is the upper end of the molybdenum bolt, the center of the bottom of the molybdenum stage is provided with a threaded hole, the molybdenum bolt is connected with the threaded hole at the center of the bottom of the molybdenum stage through the upper end of the molybdenum bolt by a thread, the upper flat plate of the molybdenum bolt is positioned in a groove at the center of the top of the ceramic plate of the sample stage, the center of the ceramic plate of the sample stage is provided with a through hole, the molybdenum bolt rod is inserted into the ceramic plate of the sample stage, the molybdenum bolt is sequentially provided with a sheet nut, a clamping bolt on the lead, one end of a high-temperature lead and a clamping bolt under the lead, the sheet nut and the molybdenum bolt are connected with the bottom of the sample stage by a thread and fixed on the ceramic plate of the sample stage, the clamping bolt is connected with the molybdenum bolt through threads and fixed at the bottom of the flaky nut, the clamping bolt is connected with the molybdenum bolt through threads under the lead, one end of the high-temperature lead is sleeved on the molybdenum bolt and is clamped and fixed through the clamping bolt on the lead and the clamping bolt under the lead, and the other end of the high-temperature lead is connected with the aviation sealing joint.
5. The variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage according to claim 1, wherein a sample stage support is in butt joint with the end part of the horizontal short side of the left L-shaped vertical plate and the end part of the horizontal short side of the right L-shaped vertical plate through a seam allowance, and the lower end of the vertical long side of the left L-shaped vertical plate and the lower end of the vertical long side of the right L-shaped vertical plate are in butt joint with the sample stage support through a seam allowance.
6. The variable-size high-power microwave plasma chemical vapor deposition apparatus bias sample stage according to claim 1, wherein the molybdenum stage and the molybdenum bolts are made of high-purity molybdenum material with purity of 99.99 wt% or more, the sample stage ceramic plate is made of high-purity alumina material with purity of 99.99 wt% or more, the sealing insulating pad is made of fluororubber, and the chamber upper cover, the chamber housing and the chamber bottom plate are made of aluminum alloy.
7. The variable-size high-power microwave plasma chemical vapor deposition equipment bias sample stage according to claim 3 or 4, wherein the rated voltage of the high-temperature wire is 600V, the working temperature is-65-200 ℃, and the insulating layer is Teflon.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116732502A (en) * | 2023-03-28 | 2023-09-12 | 成都沃特塞恩电子技术有限公司 | Sample stage assembly with bias leads and MPCVD system |
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| US20050094349A1 (en) * | 2003-10-29 | 2005-05-05 | Cheng-Liang Chang | Electrostatic chuck assembly having disassembling device |
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