CN117448795A - Equipment and method for on-line adjusting plasma ball position by MPCVD - Google Patents
Equipment and method for on-line adjusting plasma ball position by MPCVD Download PDFInfo
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- CN117448795A CN117448795A CN202311408900.5A CN202311408900A CN117448795A CN 117448795 A CN117448795 A CN 117448795A CN 202311408900 A CN202311408900 A CN 202311408900A CN 117448795 A CN117448795 A CN 117448795A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 86
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 230000007246 mechanism Effects 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims description 30
- 229910003460 diamond Inorganic materials 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
Abstract
The invention provides equipment and a method for on-line adjustment of plasma ball position by MPCVD, wherein the equipment comprises a bottom plate; the lower end surface of the shell is fixed on the bottom plate, and the top of the shell is provided with an air hole; the inner cavity shell is used for generating a plasma ball and adjusting the position of the plasma ball, is positioned in the shell, the lower end face of the inner cavity shell is propped against the bottom plate and can move along the bottom plate, and an interlayer space for gas to flow is formed by the inner cavity shell, the shell and the bottom plate together, and comprises an upper cavity and a middle cavity which are communicated in sequence; the lower cavity is used for feeding microwaves into the middle cavity, is positioned in the middle cavity and is surrounded by a circular quartz microwave window and a water cooling platform; the outer cavity adjusting mechanism is used for adjusting the position of the inner cavity shell in the shell, is fixed on the outer wall of the shell, the output end of the outer cavity adjusting mechanism penetrates through the shell and is fixed on the inner cavity shell, and the output end of the outer cavity adjusting mechanism can drive the inner cavity shell to horizontally move. The invention can adjust the center position of the inner cavity at any time, so that the plasma ball is positioned in the middle of the sample stage.
Description
Technical Field
The invention belongs to the technical field of chemical vapor deposition diamond, and particularly relates to equipment and a method for on-line adjustment of plasma sphere position by MPCVD.
Background
The Chemical Vapor Deposition (CVD) diamond film has the advantages of high hardness, good thermal conductivity, small thermal expansion coefficient, excellent optical and electrical properties, high acoustic propagation speed, good dielectric properties and the like, so that the diamond film has wide application prospect in the fields such as infrared optical windows, high-power LEDs, high-power and high-frequency electronic and optoelectronic devices and heat sinks of systems, high-performance anti-radiation detectors, sensors and the like. Currently, the most commonly used methods for preparing diamond are three methods, namely Hot Filament Chemical Vapor Deposition (HFCVD), direct current arc plasma jet chemical vapor deposition (DC arc plasmajet CVD), and Microwave Plasma Chemical Vapor Deposition (MPCVD). Among these three methods, the MPCVD method is characterized by good controllability of the diamond deposition process, no pollution of discharge electrodes, and is the preferred method internationally used for preparing high-quality diamond.
Carbon-based semiconductors can enhance chip performance more effectively, however, MPCVD is a major artificial polycrystalline diamond manufacturing apparatus, which is affected by many factors in diamond growth, one of which is temperature uniformity of diamond single crystal seed sheet and polycrystalline film, and in the process of growing single crystal or polycrystalline diamond, energy distribution of each part is asymmetric due to the fact that the position of a plasma ball is not at the center in the process of plating polycrystalline film or depositing single crystal, temperature difference of each part is large, deposited film grows to a certain thickness, and substrate breakage is often caused.
For butterfly cavity, mainly used in 8KW and above high power MPCVD equipment, relative to 6KW equipment, the energy is higher, the temperature is also high, if the position of plasma ball is found to be offset after the plasma source is ignited, the cavity must be opened to adjust the position of the upper cover of the cavity, the process includes closing the plasma source, closing the air inlet pipeline, and backfilling the vacuum system, the whole process takes a long time, the invention realizes the method of adjusting the center position of the plasma ball on line.
For MPCVD equipment, deposition of polycrystalline and single crystal diamond is a long-term process in which factors affecting the quality of the deposited diamond are many, mainly temperature, gas pressure, gas flow rate, and microwave power, and the conventional equipment defaults to a plasma sphere at an intermediate position, but in actual operation, the position of the plasma sphere is affected by various factors, such as the position of a tuning knob for centering and back-adjusting the resonant cavity, and whether the sample stage is level, so that the center position of the sample stage needs to be frequently opened to be adjusted so that the sample is located below the center of the plasma, so that the desired diamond film or single crystal can be chemically deposited.
In the existing disc-shaped cavity MPCVD device, if the position of a plasma ball is found to deviate, the position of the shell is generally adjusted, because the shell is vacuum-sealed, the position of the shell needs to be unloaded every time the position of the shell is adjusted, the shell is adjusted according to visual inspection, then the vacuum pumping is restarted, and if the position is not ideal, the step needs to be repeated until the position of the plasma ball is centered. Therefore, the whole process consumes a great deal of time, and the adjustment precision cannot be ensured. As the butterfly cavity MPCVD, the waveguide antenna is placed under the cavity, so that microwave power can be increased without corroding the quartz window, but the higher power means higher temperature, and the higher temperature is easy to bring temperature non-uniformity due to the fact that the center temperature of the plasma ball is high and the peripheral temperature is low, and if the plasma ball is not in the center position, the diamond is heated unevenly, so that the diamond is cracked in the deposition process.
In summary, various types of microwave plasma reaction apparatuses for chemical vapor deposition of diamond films have been used and proposed until now, and various factors that are unfavorable for preparing high-quality diamond films under high-power conditions exist, so that it is highly desirable to design a high-power reaction apparatus with perfect structure and performance so as to meet the requirement of rapid preparation of high-quality diamond.
Disclosure of Invention
The invention aims to provide equipment and a method for on-line adjustment of the position of a plasma ball by MPCVD, which can adjust the central position of an inner cavity at any time so that the plasma ball is positioned in the middle of a sample stage. In order to achieve the above purpose, the following technical scheme is adopted:
an apparatus for MPCVD online adjustment of plasma sphere position, comprising:
a bottom plate 5;
a shell 12, the lower end surface of which is fixed on the bottom plate 5, and the top of which is provided with an air hole 13;
an inner cavity shell 18 for generating a plasma ball 15 and adjusting the position of the plasma ball 15, wherein the inner cavity shell is positioned in the outer shell 12, the lower end surface of the inner cavity shell abuts against the bottom plate 5 and can move along the bottom plate 5, and the inner cavity shell 18, the outer shell 12 and the bottom plate 5 jointly enclose an interlayer space for gas to flow, and the inner cavity shell comprises an upper cavity 1 and a middle cavity 2 which are communicated in sequence; the top of the inner cavity shell 18 is provided with an inner cavity air hole 19;
the lower cavity 3 is used for feeding microwaves into the middle cavity 2, is positioned in the middle cavity 2 and is surrounded by a circular quartz microwave window 6 and a water cooling platform 4, and the circular quartz microwave window 6 is fixed between the bottom plate 5 and the lower end surface of the water cooling platform 4;
the external cavity adjusting mechanism is used for adjusting the position of the internal cavity shell 18 in the outer shell 12, and is fixed on the outer wall of the outer shell 12, the output end of the external cavity adjusting mechanism penetrates through the outer shell 12 and is fixed on the internal cavity shell 18, and the output end of the external cavity adjusting mechanism can drive the internal cavity shell 18 to horizontally move.
Preferably, the extraluminal adjustment mechanism comprises:
a knob bracket 24 fixed to an outer wall of the housing 12;
the driving unit 22 is fixed on the knob bracket 24, and the output end of the driving unit is connected with a screw rod which is in threaded connection with the movable connecting plate 26;
a sealing flange 25, one side of which is fixed to the movable connection plate 26, and the other side of which is fixed to the first open end of the bellows 21, wherein the second open end of the bellows 21 is communicated with the housing 12; the bellows 21 is telescopic;
and an adjusting rod 20, which is positioned in the bellows 21, has one end passing through the housing 12 and forming an output end of the external cavity adjusting mechanism, and has the other end fixed to the sealing flange 25.
Preferably, sealing rubber 17 is arranged between the annular quartz microwave window 6 and the water cooling platform 4 and between the annular quartz microwave window 6 and the bottom plate 5; a sealing ring 27 is arranged between the housing 12 and the bottom plate 5.
Preferably, a shell waveguide 11 is arranged on the outer bottom surface of the bottom plate 5, the shell waveguide 11 is sleeved on the outer water pipe 8, and an inner water pipe 16 and a central water pipe 9 are sleeved in the outer water pipe 8 in sequence;
wherein, a microwave feed port 10 is arranged on the shell waveguide 11, and a channel for microwave transmission is formed between the shell waveguide 11 and the outer water pipe 8; the bottom of the channel is closed, and the top of the channel is communicated with the bottom plate 5 and the lower cavity 3;
the outer water pipe 8, the inner water pipe 16 and the central water pipe 9 are all fixed on the water cooling platform 4, cold cut water is introduced into an internal water loop of the water cooling platform 4 through gaps between the outer water pipe 8 and the inner water pipe 16, and the internal water loop of the water cooling platform 4 is communicated with the top end of the central water pipe 9; the bottom end of the central water pipe 9 is open for cold cutting water to flow out.
Preferably, the vacuum suction opening 23 is provided in the bottom plate 5, which communicates with the middle chamber 2 and is located outside the lower chamber 3.
Preferably, the sample stage 28 is mounted to the water cooling stage 4, and the diamond deposition substrate 14 is placed on the sample stage 28.
Preferably, the housing 12 is a disk-shaped or cylindrical cavity.
A method of MPCVD on-line adjustment of plasma sphere position, comprising the steps of:
starting a driving unit 22, wherein the driving unit drives the screw rod to rotate;
the movable connecting plate 26 moves along the horizontal direction under the drive of the screw rod, the movable connecting plate 26 drives the sealing flange 25 to move, the corrugated pipe 21 stretches and contracts, the adjusting rod 20 moves along with the sealing flange 25, the adjusting rod 20 moves to drive the inner cavity shell 18 to move, and therefore position adjustment of the inner cavity shell 18 is achieved, and the plasma sphere 15 is located in the middle of the sample table.
Compared with the prior art, the invention has the advantages that:
1. the device comprises an external vacuum cavity and an internal disc-shaped resonant cavity, wherein the top of the external cavity is circular, and a water cooling pipeline and an air inlet pipeline are arranged in the cavity; the inner cavity is provided with an air inlet pipeline, the bottom of the inner cavity is provided with a microwave antenna, a microwave waveguide and a sample stage water cooling mechanism, and the inner cavity is connected with an adjusting knob outside the device through a connecting rod, so that the front and back positions and the left and right positions of the inner cavity can be adjusted.
2. The center position of the inner cavity can be adjusted at any time, so that the plasma ball is positioned in the middle of the sample table, the functions of uniform temperature and adjustable position are achieved, the ideal uniformity is realized in the diamond deposition forming process, and the function of controllable high-energy center position is achieved. The reaction gas is uniformly distributed, and the polycrystalline diamond film material with high purity and uniform thickness and single crystal diamond can be prepared with higher temperature uniformity.
Drawings
FIG. 1 is a block diagram of an apparatus for MPCVD on-line adjustment of plasma sphere position;
FIG. 2 is a process diagram of plasma sphere formation;
FIG. 3 is a top view of the apparatus with the housing in a cylindrical configuration;
fig. 4 is a structural view of an extraluminal adjustment mechanism.
The device comprises a 1-upper cavity, a 2-middle cavity, a 3-lower cavity, a 4-water cooling platform, a 5-bottom plate, a 6-annular quartz microwave window, a 7-base station fixing plate, an 8-outer water pipe, a 9-central water pipe, a 10-microwave feed inlet, an 11-shell waveguide, a 12-shell, a 13-air hole, a 14-diamond deposition substrate, a 15-plasma ball, a 16-inner water pipe, a 17-sealing rubber, an 18-inner cavity shell, a 19-inner cavity air hole, a 20-adjusting rod, a 21-bellows, a 22-driving unit, a 23-vacuum suction port, a 24-knob bracket, a 25-sealing flange, a 26-movable connecting plate, a 27-sealing ring and a 28-sample platform.
Detailed Description
The apparatus and method for MPCVD on-line plasma sphere position adjustment of the present invention will be described in more detail below with reference to the schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art could modify the invention described herein while still achieving the advantageous effects of the invention. Accordingly, the following description is to be construed as broadly known to those skilled in the art and not as limiting the invention.
As shown in fig. 1, the MPCVD apparatus for adjusting the position of a plasma ball on line adopts a dual cavity structure of an inner cavity and an outer cavity while maintaining the shape of a conventional resonant cavity. The inner cavity is a resonant cavity, a traditional mode that an outer cavity is the resonant cavity is replaced, and then the position of the inner cavity is adjusted through an external adjusting device, so that the function of adjusting the position of the plasma ball on line is realized.
The device can overcome the defects of lack of an adjusting mechanism, poor focusing capability, difficult water cooling of key parts, energy dispersion and uneven substrate surface temperature distribution of the existing various reaction devices to different degrees, so that the device can be applied to uniform and rapid deposition of high-quality diamond films under high power conditions.
The device specifically comprises:
the bottom plate 5, a vacuum pumping port 23 (communicating with a vacuum pump) is provided on the bottom plate 5, which communicates with the middle cavity 2 and is located outside the lower cavity 3.
The outer bottom surface of the bottom plate 5 is provided with an outer shell waveguide 11, the outer shell waveguide 11 is sleeved on the outer water pipe 8, and an inner water pipe 16 and a central water pipe 9 are sleeved in the outer water pipe 8 in sequence;
wherein, a microwave feed port 10 is arranged on the shell waveguide 11, and a channel for microwave transmission is formed between the shell waveguide 11 and the outer water pipe 8; the bottom of the channel is closed (so that microwaves travel upwards along the outer wall of the outer water pipe 8), and the top of the channel is communicated with the bottom plate 5 and the lower cavity 3;
the outer water pipe 8, the inner water pipe 16 and the central water pipe 9 are all fixed on the water cooling platform 4, cold cut water is introduced into an inner water loop of the water cooling platform 4 through a gap between the outer water pipe 8 and the inner water pipe 16, and the inner water loop of the water cooling platform 4 is communicated with the top end of the central water pipe 9; the bottom end of the central water pipe 9 is open for cold cutting water to flow out.
A shell 12, the lower end surface of which is fixed on the bottom plate 5, and the top of which is provided with an air hole 13; the housing 12 is a dish-shaped cavity (this embodiment) or a cylindrical cavity. The interior of the cylindrical cavity is provided with a cylindrical inner cavity structure, as shown in fig. 3.
The main stream equipment in the market is still a resonant cavity (the diameter is about 120-160 mm) with a cylindrical structure, a cylindrical inner cavity with smaller diameter can be added in the cylindrical cavity at the time, and then the same external adjusting structure is adopted to adjust the inner cavity, so that the position of the plasma ball is adjusted.
An inner cavity shell 18, which is used for generating a plasma ball 15 and adjusting the position of the plasma ball 15, is positioned in the outer shell 12, the lower end surface of the inner cavity shell is propped against the bottom plate 5 and can move along the bottom plate 5, and the inner cavity shell 18, the outer shell 12 and the bottom plate 5 jointly enclose an interlayer space for gas to flow, and comprises an upper cavity 1 and a middle cavity 2 which are sequentially communicated; the top of the inner cavity shell 18 is provided with an inner cavity air hole 19.
Wherein, upper cavity 1 and well cavity 2 are sealed through sealing strip 27 by shell 12 and bottom plate 5, form the vacuum chamber and form the vacuum chamber.
The inner cavity is arranged in the outer cavity and is used for independently bearing the reflection function of microwave (used for reflecting microwave), and the inner cavity is arranged in the vacuum and is used independently of the whole system, so that the inner cavity has a thinner wall thickness and can be processed into various shapes according to simulation requirements, for example, various processing modes of stamping and polishing can be adopted to obtain various structures with extremely low cost, various shapes and more complicated shapes, and the exploration of more ideal resonant cavity structures is possible.
Therefore, the inner cavity does not have the function of sealing vacuum in the vacuum, so that the position can be adjusted at will, but the inner cavity replaces the effect of reflecting microwaves to form plasma by the outer cavity.
Therefore, the inner cavity shell 18 has a simple structure, compared with a traditional outer cavity, a complex water cooling structure (distributed in the inner part of the cavity wall of the outer shell) and an air inlet structure are omitted, the manufacturing cost is low, the reflection and resonance effects of the outer cavity on microwaves are replaced, a plasma ball is formed, the shape is optimized, the convenience and the variability are realized, and a large amount of cost is saved.
The lower cavity 3 is communicated with the atmosphere and is used for feeding microwaves into the middle cavity 2, the lower cavity 2 is positioned in the middle cavity 2 and is surrounded by a circular quartz microwave window 6 and a water cooling platform 4, and the circular quartz microwave window 6 is fixed between the bottom plate 5 and the lower end surface of the water cooling platform 4. The sample stage 28 is mounted on the water cooling stage 4, and the diamond deposition substrate 14 (4-6 inch single crystal silicon wafer or molybdenum wafer) is placed on the sample stage 28.
A base fixing plate 7 is arranged below the water cooling platform 4, and a screw step hole is formed in the base fixing plate 7 and is connected with the water cooling platform 4. The base fixing plate 7 is provided with holes for the outer water pipe 8, the inner water pipe 16 and the central water pipe 9 to pass through.
Sealing rubber 17 is arranged between the annular quartz microwave window 6 and the water cooling platform 4 and between the annular quartz microwave window 6 and the bottom plate 5 and is used for sealing vacuum (the upper cavity 1 and the middle cavity 2); a sealing ring 27 is arranged between the housing 12 and the bottom plate 5.
Referring to fig. 4, the external cavity adjusting mechanism is used for adjusting the position of the internal cavity shell 18 in the outer shell 12, and is fixed on the outer wall of the outer shell 12, and the output end of the external cavity adjusting mechanism passes through the outer shell 12 and is fixed on the internal cavity shell 18, so that the output end of the external cavity adjusting mechanism can drive the internal cavity shell 18 to horizontally move.
Specifically, the extraluminal adjustment mechanism includes:
a knob bracket 24 fixed to an outer wall of the housing 12;
a driving unit 22 (knob or motor) fixed to a knob bracket 24, the output end of which is connected to a screw rod which is screw-connected to a movable connection plate 26;
a sealing flange 25, one side of which is fixed to the movable connecting plate 26, and the other side of which is fixed to the first open end of the bellows 21, the second open end of the bellows 21 being communicated with the housing 12; bellows 21 is telescopic.
Wherein, the sealing flange 25 and the corrugated pipe 21 are sealed and welded to form a vacuum sealing structure.
Because of the expansion and contraction characteristics of the bellows, vacuum tightness is ensured, and the positions of the inner cavity in the X direction and the Y direction can be adjusted by utilizing the expansion and contraction characteristics and the relative movement positions of the bellows and the external adjusting system in the X direction and the Y direction of the shell 12.
An adjustment rod 20, which is located within bellows 21, has one end passing through housing 12 and forming the output end of the out-of-cavity adjustment mechanism, and has the other end secured to a sealing flange 25.
The movable connecting plate 26 can horizontally move under the drive of the screw rod, the movable connecting plate drives the sealing flange to move, the corrugated pipe can stretch out and draw back at the moment, the adjusting rod also moves along with the movement, and the movement of the adjusting rod drives the movement of the inner cavity because the adjusting rod is connected to the inner cavity, so that the adjustment of the position of the inner cavity is realized, and the energy distribution is uniform and more reasonable and symmetrical.
In the practical application process, the guide of the linear guide rail is matched between the movable connecting plate and the knob bracket, so that the inclination of the movable connecting plate is avoided.
As shown in fig. 2, microwaves are fed from below, converted through an antenna (housing waveguide 11) and introduced into an inner cavity, focused over a diamond deposition substrate 14 by reflection from the inner cavity, and resonated with an introduced mixed gas, which is H 2 Mainly comprises CH 4 O and O 2 And the like, the mixed gas is excited by microwaves to form plasma balls, and a diamond chemical deposition environment is formed in a specific vacuum degree environment.
Preferably, the entire extraluminal adjustment mechanism is mounted one each in the X and Y directions (horizontal directions) of the outer lumen (see fig. 3), which can show adjustments to the front and back and left and right of the inner lumen.
In this embodiment, if the accuracy of the whole apparatus is high and the adjustment distance of the inner cavity shell 18 is required to be low without changing the outer shell 12, the wall thickness of the inner cavity shell 18 may be made thin, for example, about 0.5mm, and the distance between the inner cavity shell 18 and the outer shell 12 is 5mm.
For a high-power dish-shaped cavity, as the diameter of the cavity body is large (generally more than 300 mm), an inner cavity is added in the outer cavity, the shape of the whole resonant cavity is hardly changed, and the shape and focusing effect of the resonant cavity are not affected.
The key component of the device provided by the invention is an inner cavity, which is extremely low compared with the cavity of the shell, is favorable for matching with multiple electric field simulations, processing different inner cavity shapes and using the inner cavity test of multiple shapes.
Another practical application of the invention is: because the cavity replaces the function of reflecting microwaves by the outer cavity, and the performance of the microwave resonant cavity is closely related to the cavity shape, the previous experiments show that in order to obtain ideal electric field distribution of the resonant cavity, the shape optimization of the resonant cavity often needs many times of computer simulation and actual test, and for the traditional resonant cavity, the structure of the outer cavity is extremely complex due to the ventilation holes and the heat conducting grooves on the outer cavity, the processing cost is very high, each experiment needs high cost,
the invention replaces the outer cavity with the inner cavity with a simpler structure, and can process the inner cavities with a plurality of shapes with low cost in the experimental process, thereby realizing the inner cavity structures with different shapes and being beneficial to more economically optimizing the shape of the resonant cavity.
Working principle:
1. the step of forming the plasma ball 15:
microwaves are fed into the shell waveguide 11 through the microwave feed port 10, the outer water pipe 8 in the shell waveguide 11 has the function of converting an antenna (microwaves travel upwards along the outer wall of the outer water pipe 8), the fed microwaves are led into the lower cavity 3, then enter the middle cavity 2 through the annular quartz window 6, are reflected by the inner wall of the middle cavity 2 and enter the upper cavity 1, the upper cavity is also called a resonant cavity, and a plasma ball 15 is formed in the upper cavity.
The gas enters the interlayer of the inner cavity shell 18 and the outer shell 12 through the gas holes 13 of the outer shell 12, and then is guided into the upper cavity 1 through the inner cavity gas holes 19.
After resonance of the microwaves under a certain pressure, the gas forms plasma spheres 15 in the upper cavity 1, and the plasma spheres act on the polycrystalline or monocrystalline substrate on the sample stage 14 to perform chemical deposition to form polycrystalline or monocrystalline diamond.
2. When the plasma ball 15 is not located right in the middle of the sample stage (observing the center position of the plasma ball, or observing the temperature color of the deposited substrate, the higher the temperature, the brighter the substrate), the step of adjusting the position of the inner chamber housing 18:
the movable connecting plate 26 moves along the horizontal direction under the action of the screw and the driving unit, the movable connecting plate drives the sealing flange to move, the corrugated pipe stretches out and draws back at the moment, the adjusting rod also moves along with the movement, and the adjusting rod is connected to the inner cavity, and the movement of the adjusting rod drives the movement of the inner cavity, so that the position of the inner cavity is adjusted. Therefore, the mechanism can adjust the center position of the inner cavity at any time, so that the plasma sphere is positioned in the middle of the sample stage, and the diamond deposition substrate 14 is always positioned in the middle of the sample stage.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (8)
1. An apparatus for MPCVD on-line adjustment of plasma sphere position, comprising:
a bottom plate (5);
a shell (12) with a lower end surface fixed on the bottom plate (5) and an air hole (13) at the top;
the inner cavity shell (18) is used for generating the plasma ball (15) and adjusting the position of the plasma ball (15), is positioned in the shell (12), the lower end face of the inner cavity shell abuts against the bottom plate (5) and can move along the bottom plate (5), and the inner cavity shell (18), the shell (12) and the bottom plate (5) jointly enclose an interlayer space for gas to flow, and the interlayer space comprises an upper cavity (1) and a middle cavity (2) which are sequentially communicated; an inner cavity air hole (19) is formed in the top of the inner cavity shell (18);
the lower cavity (3) is used for feeding microwaves into the middle cavity (2), is positioned in the middle cavity (2), and is surrounded by a circular quartz microwave window (6) and a water cooling platform (4), wherein the circular quartz microwave window (6) is fixed between the bottom plate (5) and the lower end surface of the water cooling platform (4);
the outer cavity adjusting mechanism is used for adjusting the position of the inner cavity shell (18) in the outer shell (12), is fixed on the outer wall of the outer shell (12), the output end of the outer cavity adjusting mechanism penetrates through the outer shell (12) and is fixed on the inner cavity shell (18), and the output end of the outer cavity adjusting mechanism can drive the inner cavity shell (18) to move horizontally.
2. The apparatus for MPCVD online adjustment of plasma ball position according to claim 1, wherein the extraluminal adjustment mechanism comprises:
a knob bracket (24) fixed to the outer wall of the housing (12);
the driving unit (22) is fixed on the knob bracket (24), the output end of the driving unit is connected with a screw rod, and the screw rod is in threaded connection with the movable connecting plate (26);
a sealing flange (25) with one side fixed to the movable connecting plate (26) and the other side fixed to the first open end of the bellows (21), wherein the second open end of the bellows (21) is communicated with the housing (12); the corrugated pipe (21) is telescopic;
and an adjusting rod (20) which is positioned in the corrugated pipe (21), one end of the adjusting rod passes through the shell (12) and forms an output end of the out-cavity adjusting mechanism, and the other end of the adjusting rod is fixed on the sealing flange (25).
3. The device for on-line adjustment of plasma ball position by MPCVD according to claim 1, wherein sealing rubber (17) is arranged between the circular quartz microwave window (6) and the water cooling platform (4) and between the circular quartz microwave window (6) and the bottom plate (5); a sealing ring (27) is arranged between the shell (12) and the bottom plate (5).
4. The device for on-line adjustment of plasma ball position by MPCVD according to claim 1, wherein a shell waveguide (11) is installed at the outer bottom surface of the bottom plate (5), the shell waveguide (11) is sleeved on an outer water pipe (8), and an inner water pipe (16) and a central water pipe (9) are sequentially sleeved in the outer water pipe (8);
the shell waveguide (11) is provided with a microwave feed port (10), and a channel for microwave transmission is formed between the shell waveguide (11) and the outer water pipe (8); the bottom of the channel is closed, and the top of the channel is communicated with the bottom plate (5) and the lower cavity (3);
the outer water pipe (8), the inner water pipe (16) and the central water pipe (9) are all fixed on the water cooling platform (4), and cold cut water is introduced into an inner water loop of the water cooling platform (4) through a gap between the outer water pipe (8) and the inner water pipe (16), and the inner water loop of the water cooling platform (4) is communicated with the top end of the central water pipe (9); the bottom end of the central water pipe (9) is opened for cold water cutting to flow out.
5. The apparatus for on-line adjustment of plasma ball position by MPCVD according to claim 1, wherein the vacuum suction port (23) is opened at the bottom plate (5) which communicates with the middle chamber (2) and is located outside the lower chamber (3).
6. The MPCVD apparatus for on-line adjustment of plasma sphere position according to claim 1, wherein the sample stage (28) is mounted on a water cooling platform (4), and the diamond deposition substrate (14) is placed on the sample stage (28).
7. The MPCVD apparatus for on-line adjustment of plasma sphere position according to claim 1, wherein the housing (12) is a dish-shaped or cylindrical cavity.
8. A method for MPCVD on-line adjustment of plasma sphere position, comprising the steps of:
starting a driving unit (22), wherein the driving unit drives the screw rod to rotate;
the movable connecting plate (26) moves along the horizontal direction under the drive of the screw rod, the movable connecting plate (26) drives the sealing flange (25) to move, the corrugated pipe (21) stretches out and draws back, the adjusting rod (20) moves along with the sealing flange (25), the adjusting rod (20) moves to drive the inner cavity shell (18) to move, and therefore the position of the inner cavity shell (18) is adjusted, and the plasma sphere (15) is located in the middle of the sample table.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN118374788A (en) * | 2024-04-01 | 2024-07-23 | 铂世光(上海)技术有限公司 | MPCVD dish-shaped cavity diamond deposition area enlarging structure and method |
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