CN115652274A - Chemical vapor deposition diamond system and equipment - Google Patents
Chemical vapor deposition diamond system and equipment Download PDFInfo
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- CN115652274A CN115652274A CN202211376070.8A CN202211376070A CN115652274A CN 115652274 A CN115652274 A CN 115652274A CN 202211376070 A CN202211376070 A CN 202211376070A CN 115652274 A CN115652274 A CN 115652274A
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Abstract
The invention provides a chemical vapor deposition diamond system and equipment, which comprise a cavity, a cavity cover, a deposition table, an annular microwave feed-in window, a waveguide, a coaxial waveguide, an inverted substrate table component sealing device and an inverted substrate table component, wherein the cavity, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide, the inverted substrate table component sealing device and the inverted substrate table component enclose a vacuum sealing environment, and the inverted substrate table component can move up and down; the microwave-excited plasma is located directly below the inverted substrate table assembly. According to the invention, the annular microwave feed-in window is arranged between the cavity cover and the deposition table, the inverted substrate table and the deposition table are arranged between the microwave feed-in window and the plasma for blocking, the distance from the plasma is far, the associated carbon residual substances cannot fall on the microwave feed-in window in the diamond growth process, and meanwhile, the ionized reaction gas cannot etch the microwave feed-in window, so that silicon or other impurities are prevented from being introduced into the diamond growth environment.
Description
Technical Field
The invention belongs to the technical field of diamond growth, and particularly relates to a chemical vapor deposition diamond system and equipment comprising the chemical vapor deposition diamond system.
Background
This section provides background information related to the present invention only and is not necessarily prior art.
Diamond has excellent electrical properties of semiconductors, namely wide band gap, high breakdown electric field, high carrier mobility and high thermal conductivity, which make diamond become one of the most promising semiconductor materials of solid-state power devices, and is known as an ultimate semiconductor, even though diamond has good application prospects, natural diamond has limited reserves and is expensive, so that the research direction of diamond artificial synthesis is concerned by the public.
The Microwave Plasma Chemical Vapor Deposition (MPCVD) diamond growth technology is gradually becoming the mainstream method of artificial diamond due to its advantages of no pollution of microwave energy, pure gas raw material, no catalyst and impurity incorporation, etc. The working principle of MPCVD is as follows: the microwave source emits microwave energy, the microwave energy enters the resonant cavity after waveguide transmission and antenna mode conversion, a microwave alternating electric field with certain intensity is formed in the resonant cavity, reaction gas maintained in a low-pressure state is broken down under the excitation of the alternating electric field to form plasma, so that various active groups are generated, then a series of chemical reactions are generated on the diamond by the various active groups, and adsorption, desorption, migration, diffusion and deposition are gradually generated on the surface of the diamond, and finally the diamond is obtained.
At present, in order to grow high-quality diamond more quickly, part of MPCVD equipment selects the technical scheme of inverting a substrate table, namely, plasma is positioned below the substrate table, because in the diamond growth process, ionized reaction gas is in an ascending trend, and can quickly reach the surface of the diamond to be adsorbed, desorbed, migrated, diffused and deposited, so that the diamond deposition speed is accelerated, meanwhile, the ionized reaction gas does not need to go through the processes of repeated ascending and descending, so that a large amount of non-ionized reaction gas cannot be doped, the ionized gas uniformity distribution on the surface of the diamond is realized, and finally, the growth of the high-quality diamond is realized.
Although the technical scheme of inverting the substrate table can produce the technical effects, the phenomenon that the residual substances are associated with carbon in the growth process of the diamond is ignored, and the residual substances are dropped and gathered on the microwave feeding quartz plate due to the action of gravity, so that the microwave feeding efficiency is influenced. Meanwhile, as the microwave feed plate is closer to the plasma, ionized reaction gas can also etch the microwave feed quartz plate, so that the grown diamond can possibly introduce silicon or other impurities.
Disclosure of Invention
The present invention has two main objects, the first object is to provide a chemical vapor deposition diamond system to solve the technical problems of the prior art that associated carbon residues fall and accumulate on a microwave feed quartz plate during diamond growth and that grown diamond introduces silicon or other impurities, and the second object is to provide an apparatus comprising the chemical vapor deposition diamond system.
To achieve the first object, the present invention provides a chemical vapor deposition diamond system. The method comprises the following steps:
an integrally formed cavity;
the cavity cover is arranged on the cavity body;
the deposition table is arranged between the cavity and the cavity cover;
the annular microwave feed-in window is arranged between the cavity cover and the deposition table;
the waveguide is fixedly arranged on the cavity cover;
the coaxial waveguide is simultaneously penetrated and arranged in the waveguide and the cavity cover, one end of the coaxial waveguide is hermetically fixed with the deposition table, and the other end of the coaxial waveguide is hermetically and fixedly connected with the waveguide;
the inverted substrate table assembly sealing device is fixedly arranged on the coaxial waveguide;
the inverted substrate table assembly is simultaneously arranged in the deposition table, the coaxial waveguide and the inverted substrate table assembly sealing device in a penetrating mode, a vacuum sealing environment is defined by the cavity, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide, the inverted substrate table assembly sealing device and the inverted substrate table assembly, and the inverted substrate table assembly can move up and down;
and a plasma, the microwave-excited plasma being located directly below the inverted substrate table assembly.
The cavity, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide, the inverted substrate table assembly sealing device and the inverted substrate table assembly jointly enclose a vacuum sealing environment, namely the vacuum sealing performance of the cavity structure is created, and a necessary environment for diamond deposition is created; the up-and-down movement function of the inverted substrate table assembly is to keep a certain distance between the surface of diamond and plasma in the growth process of diamond; in the system, the plasma is excited by microwave and formed in the cavity, and due to the unique design of the cavity structure and the inverted substrate table, the plasma is excited and formed under the inverted substrate table assembly.
Furthermore, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide and the substrate table assembly are concentrically arranged.
The concentric purpose is that the microwave can excite the plasma with uniform distribution in the cavity structure, which is beneficial to the growth of the diamond.
Furthermore, at least one O-shaped sealing ring is arranged between the top of the annular microwave feed-in window and the cavity cover, and at least one O-shaped sealing ring is arranged between the bottom of the annular microwave feed-in window and the deposition table.
O-shaped sealing rings are arranged between the top of the annular microwave feed-in window and the cavity cover and between the bottom of the annular microwave feed-in window and the deposition table so as to realize the vacuum tightness of the cavity structure.
Furthermore, the cavity cover is provided with a cavity cover annular groove, the deposition table is provided with a deposition table annular groove, and the O-shaped sealing ring is arranged in the cavity cover annular groove and the deposition table annular groove.
The cavity cover annular groove arranged on the cavity cover and the deposition table annular groove arranged on the deposition table are used for positioning the annular microwave feed-in window and are more favorable for the reliability of products, and the O-shaped sealing rings are arranged in the cavity cover annular groove and the deposition table annular groove and are favorable for the sealing among the cavity cover, the annular microwave feed-in window and the deposition table.
Furthermore, the annular microwave feed-in window is made of quartz.
The purpose of the annular microwave feeding window is to feed microwaves outside the cavity structure into the cavity structure, and quartz has a low microwave loss factor, and the absorbed microwave energy is almost negligible.
Furthermore, the inverted substrate table assembly comprises an inverted substrate table support and an inverted substrate table, and a substrate fixing module is arranged on the inverted substrate table.
The substrate stage is used for bearing the substrate and maintaining the substrate to be always kept within a certain temperature range, namely within the temperature range for diamond growth, and the substrate fixing module is arranged on the inverted substrate stage, so that the substrate can be separated from the inverted substrate stage under the action of gravity, namely the substrate and the inverted substrate stage are fixed.
Furthermore, the substrate fixing module is a plurality of L-shaped fixing pieces fixedly arranged at the edge of the inverted substrate table, and the edge of each L-shaped fixing piece, which is close to the plasma, is in a round angle arrangement.
A plurality of L-shaped fixing parts are arranged at the edge of the inverted substrate table, so that a clamping position is formed on the substrate, and the substrate can be fixed on the inverted substrate table; the round angle of the L-shaped fixing piece close to the edge of the plasma is provided with the round angle because the microwave energy is enriched at the edge corner and the sharp corner, so that the uniformity of the plasma is influenced, the waste of the microwave energy is formed, and meanwhile, the adverse effect is brought to the high-quality growth of the diamond.
Furthermore, the L-shaped fixing piece is made of a metal material with certain elasticity.
In the process of diamond growth, the temperature of plasma is very high, and the L-shaped fixing piece is positioned near the plasma, so that the L-shaped fixing piece is made of metal, the elasticity of the L-shaped fixing piece is used for enabling the substrate and the inverted substrate table to be always in a joint state, the control of the substrate temperature is facilitated, and the diamond growth is ensured to be always within a proper temperature range.
To achieve the second object, the present invention also provides an apparatus comprising the above chemical vapor deposition diamond system.
According to the technical scheme, the invention has the following beneficial effects:
1. according to the invention, the annular microwave feed-in window is arranged between the cavity cover and the deposition table, and the annular microwave feed-in window is positioned at the upper part of the cavity, and the inverted substrate table and the deposition table are arranged between the microwave feed-in window and the plasma for blocking and are far away from the plasma, so that the residual substances associated with carbon can be deposited at the bottom of the cavity in the diamond growth process and can not fall on the microwave feed-in window, meanwhile, ionized reaction gas can not etch the microwave feed-in window, and silicon or other impurities are prevented from being introduced into the diamond growth environment;
2. the cavity, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide and the substrate table component are concentrically arranged, so that the microwave can excite uniformly distributed plasma in the cavity structure, and the growth of diamond is facilitated;
3. in the invention, the plasma excited by the microwave is positioned right below the inverted substrate table, so that the ionized reaction gas is promoted to reach a diamond growth area at the first time by the ascending motion of the ionized reaction gas, and meanwhile, the possibility of doping a large amount of un-ionized reaction gas is eliminated near the diamond growth area, thereby obviously improving the growth efficiency of the diamond, improving the uniformity of the ionized gas near the diamond growth area and improving the growth quality of the diamond;
4. the good sealing performance of the reaction environment is ensured by arranging the cavity cover, the deposition table and the annular microwave feed-in window sealing structure;
5. the substrate fixing module arranged on the inverted substrate table prevents the substrate from separating from the inverted substrate table under the action of gravity;
6. the edge of the L-shaped fixing piece close to the plasma is provided with a fillet, so that the phenomenon that microwave energy is enriched at the edge corner and the sharp corner of the edge of the L-shaped fixing piece to influence the uniformity of the plasma is avoided, the microwave energy is saved, and the high-quality growth of the diamond is realized;
7. the elastic metal of the L-shaped fixing piece can ensure that the substrate and the inverted substrate table are kept in a tightly attached state while the stability of the L-shaped fixing piece is maintained, and the growth of diamond can be maintained within a required specific temperature range.
Drawings
FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition diamond system according to the present invention;
FIG. 2 is a schematic cross-sectional view of a chamber lid, deposition station and annular microwave feedthrough window seal arrangement provided in accordance with the present invention;
FIG. 3 is a schematic cross-sectional view of a chamber lid, deposition station and annular microwave feedthrough window seal arrangement provided in accordance with the invention;
FIG. 4 is a schematic view of an inverted substrate table assembly and substrate holding structure according to the present invention.
The device comprises a cavity 1, a cavity cover 2, a cavity cover annular groove 21, a deposition table 3, a deposition table annular groove 31, an annular microwave feed-in window 4, an O-shaped sealing ring 401, a waveguide 5, a coaxial waveguide 6, an inverted substrate table assembly 7, an inverted substrate table support 71, an inverted substrate table 72, an L-shaped fixing member 721, a substrate 722, a plasma 8 and an inverted substrate table assembly sealing device 9.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments of the present invention and the related technical features in the embodiments may be combined with each other. It should be noted that the following detailed description is intended to provide further explanation of the invention, and unless otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The invention is described in detail below, with the same or similar reference numerals indicating the same or similar parts or having the same or similar functions throughout. In addition, if the description of the prior art documents or other prior art is not necessary for the technical solution provided by the present invention, it has been omitted in the present invention. The embodiments described in the present invention are for illustrative purposes only and are not intended to limit the technical solutions of the present invention.
Although the technical scheme of inverting the substrate table in the prior art has the advantages of accelerating the diamond deposition speed and realizing the gas uniformity distribution of diamond surface ionization, the phenomenon that the residual substances associated with carbon can appear in the growth process of the diamond is ignored, the residual substances associated with carbon can be conveniently gathered on the microwave feed-in quartz plate due to the action of gravity to influence the microwave feed-in efficiency, and meanwhile, because the microwave feed-in plate is closer to the plasma, the reaction gas of the plasma can also etch the microwave feed-in quartz plate, so that silicon or other impurities can be introduced into the grown diamond. The invention provides a chemical vapor deposition diamond system and equipment for solving the technical problems.
The technical solution of the present invention and how to solve the above technical problems are described in detail by specific examples below.
Referring to fig. 1, in order to achieve the first object, a chemical vapor deposition diamond system includes an integrally formed cavity 1; the cavity cover 2 is arranged on the cavity 1; the deposition table 3 is arranged between the cavity 1 and the cavity cover 2; the annular microwave feed-in window 4 is arranged between the cavity cover 2 and the deposition table 3; the cavity 1, the cavity cover 2, the deposition table 3 and the annular microwave feed-in window 4 form a cavity structure, and the annular microwave feed-in window 4 is used for feeding microwaves into the cavity structure from the outside of the cavity structure; the waveguide 5 is fixedly arranged on the cavity cover 2 and can conduct microwaves; the coaxial waveguide 6 is simultaneously arranged in the waveguide 5 and the cavity cover 2 in a penetrating way, one end of the coaxial waveguide is fixedly connected with the deposition table 3 in a sealing way, and the other end of the coaxial waveguide is fixedly connected with the waveguide 5 in a sealing way, so that the deposition table 3 and the microwave feed-in window 4 can be prevented from falling off due to the action of gravity, and simultaneously, the vacuum tightness of the cavity structure is also facilitated, and as the microwave can penetrate through insulators such as glass and can not penetrate through conductors such as metal, a new microwave transmission channel is formed by the coaxial waveguide 6 and the waveguide 5 together, and the microwave can penetrate through the annular microwave feed-in window 4 to enter the cavity structure after being emitted from a microwave source and passing through the new microwave transmission channel formed by the coaxial waveguide 6 and the waveguide 5 together; the inverted substrate table set sealing device 9 is fixedly arranged on the coaxial waveguide 6 and is used for realizing the vacuum tightness of a cavity structure in the process of moving the inverted substrate table assembly 7 up and down; the inverted substrate table assembly 7 is simultaneously arranged in the deposition table 3, the coaxial waveguide 6 and the inverted substrate table assembly sealing device 9 in a penetrating mode, a vacuum sealing environment is defined by the cavity 1, the cavity cover 2, the deposition table 3, the annular microwave feed-in window 4, the coaxial waveguide 6, the inverted substrate table assembly sealing device 9 and the inverted substrate table assembly 7, and a certain distance is kept between the diamond surface and the plasma 8 in the growth process of the diamond due to the fact that the inverted substrate table assembly 7 can move up and down; due to the design of the cavity structure, the plasma 8 excited by microwaves is positioned under the inverted substrate table assembly 7, so that ionized reaction gas reaches a diamond growth area in the ascending motion at the first time, and meanwhile, the possibility of doping a large amount of non-ionized reaction gas is eliminated near the diamond growth area, the growth efficiency of the diamond can be obviously improved, the uniformity of the ionized gas near the diamond growth area can be improved, and the growth quality of the diamond is improved.
The waveguide 5 is a hollow metal waveguide tube with various shapes, and can completely limit transmitted electromagnetic waves in the metal waveguide tube, in the invention, the waveguide 5 and the coaxial waveguide 6 can form a new waveguide, namely a new microwave transmission channel, and microwaves are transmitted in the new waveguide.
It should be noted here that, since the inverted substrate stage assembly 7 can move up and down, and the inverted substrate stage assembly sealing device 9 is fixedly disposed on the coaxial waveguide 6, the inverted substrate stage assembly sealing device 9 may adopt a technically mature device including a vacuum bellows or a magnetic fluid to overcome the contradiction between the motion and the vacuum sealing property.
In some embodiments, as shown in FIG. 1, the chamber lid 2, the deposition station 3, the ring-shaped microwave feedthrough window 4, the coaxial waveguide 6, and the substrate table assembly 7 are concentrically arranged.
The cavity 1, the cavity cover 2, the deposition table 3, the annular microwave feed-in window 4, the coaxial waveguide 6 and the substrate table assembly 7 are concentrically arranged, so that plasma with uniform distribution can be excited in a cavity structure by microwaves, and growth of diamond is facilitated. After the microwave is emitted from the microwave source, the microwave penetrates through the annular microwave feed-in window 4 and uniformly enters the cavity structure through a new microwave transmission channel formed by the waveguide 5, the waveguide 5 and the coaxial waveguide 6, and the microwave can excite the uniformly distributed plasma 8 because the cavity structure is also an axisymmetric cylindrical cavity.
In some embodiments, as shown in fig. 2, 2O-rings 401 are disposed between the top of the circular microwave feedthrough window 4 and the chamber lid 2, and 2O-rings 401 are disposed between the bottom of the circular microwave feedthrough window 4 and the deposition station 3. When the chemical vapor deposition diamond system is assembled, the top of the annular microwave feed-in window 4 and the cavity cover 2 extrude 2O-shaped sealing rings 401 between the top of the annular microwave feed-in window 4 and the cavity cover 2, so that good sealing performance is formed between the top of the annular microwave feed-in window 4 and the cavity cover 2; similarly, the bottom of the ring-shaped microwave feedthrough window 4 and the deposition station 3 extrude 2O-rings 401 therebetween, and the bottom of the ring-shaped microwave feedthrough window 4 and the deposition station 3 are sealed.
In some embodiments, as shown in FIG. 3, the chamber cover 2 has a chamber cover annular groove 21, the deposition station 3 has a deposition station annular groove 31, and 2O-rings 401 are disposed in the chamber cover annular groove 21 and the deposition station annular groove 31, respectively.
The annular groove 21 of the chamber cover and the annular groove 31 of the deposition table are formed on the chamber cover 2 and the deposition table 3, so as to position the annular microwave feeding window 4, and if the annular groove 21 of the chamber cover and the annular groove 31 of the deposition table are not formed on the chamber cover 2 and the deposition table 3, the annular microwave feeding window 4 may be displaced, which is not favorable for the reliability of the product. O-rings in the chamber cover annular groove 21 and the deposition station annular groove 31 help seal between the chamber cover 2, the annular microwave feedthrough window 4, and the deposition station 3.
In some embodiments, the annular microwave feedthrough window 4 is made of quartz.
The material of the ring-shaped microwave feeding window 4 is quartz, which is determined by the characteristics of microwave, which is an electromagnetic wave with the frequency of 300MHz-300GHz, has the characteristics of easy clustering, high directionality and straight line propagation, and can be used for transmitting high-frequency signals in unobstructed sight free space. The microwave frequency is higher than the frequency of a general radio wave, and is also generally called "ultra high frequency electromagnetic wave", and the microwave also has a particle duality as one type of electromagnetic wave. The basic properties of microwaves are generally represented by three characteristics, namely penetration, reflection and absorption. For glass, plastic and porcelain, microwaves almost pass through without being absorbed. The microwave is absorbed into water and food, and the microwave is self-heated. And for metal objects, the microwave is reflected. The purpose of the ring-shaped microwave feeding window is to feed external microwaves into the cavity structure, and quartz has a low microwave loss factor, i.e., absorbed microwave energy can be almost ignored, so the ring-shaped microwave feeding window 4 is made of quartz.
In some embodiments, as shown in FIG. 4, inverted substrate table assembly 7 comprises an inverted substrate table support 71 and an inverted substrate table 72, with a substrate holding module disposed on inverted substrate table 72.
The inverted substrate stage support 71 is provided therein with an inverted substrate stage water-cooling structure, and the inverted substrate stage 72 is used for carrying the substrate 722 and maintaining the substrate 722 within a certain temperature range, i.e., within a temperature range for diamond growth. The substrate holding module provided on the inverted substrate table 72 holds the substrate 722 and the inverted substrate table 72, and if the substrate holding module is not provided on the inverted substrate table 72, the substrate 722 may be detached from the inverted substrate table 72 by gravity.
In some embodiments, as shown in fig. 4, the substrate fixing module is 3L-shaped fixing members 721 fixedly disposed at the edge of the inverted substrate table 72, wherein 2 adjacent L-shaped fixing members 721 form an included angle of 180 degrees or more with the central connecting line of the inverted substrate table 72, and the edge of the L-shaped fixing member 721 near the plasma 8 is rounded.
3L-shaped fixing pieces 721 are arranged at the edge of the inverted substrate table 72, and a clamping position for fixing the substrate 722 can be formed between the bottom protrusion of the L-shaped fixing piece 721 and the inverted substrate table 72, wherein the included angle between the central connecting line of 2 adjacent L-shaped fixing pieces 721 and the inverted substrate table 72 is more than or equal to 180 degrees, so that the substrate 722 can be fixed on the inverted substrate table 72, the substrate 722 can be conveniently placed between the bottom protrusion of the L-shaped fixing piece 721 and the clamping position of the inverted substrate table 72, and the substrate 722 and the inverted substrate table 72 can be more optimally fixed; the rounded corners of the L-shaped fixture 721 near the edge of the plasma 8 are due to the fact that microwave energy will concentrate at the edge corners and sharp corners, which affects the uniformity of the plasma, not only wastes microwave energy, but also adversely affects the high quality growth of diamond.
In some embodiments, the L-shaped fastener 721 is made of a resilient metal.
In the process of diamond growth, the temperature of the plasma is very high, and the L-shaped fixture 721 is located near the plasma 8, so the L-shaped fixture 721 is made of metal, and the elasticity of the material of the L-shaped fixture 721 is to make the substrate 722 and the inverted substrate stage 72 always keep a bonding state, which is helpful for controlling the temperature of the substrate 722, i.e. ensuring that the diamond growth is always within a proper temperature range.
In some embodiments, not shown, the inverted substrate table 72 is provided with a plurality of substrate table recesses, and the substrate holding module is a chuck disposed in the substrate table recesses.
The substrate fixing module adopts another technical implementation mode, a plurality of substrate platform depressions are formed in the inverted substrate platform, suckers are arranged in the substrate platform depressions, and gas circuit pipelines of the suckers can be arranged in the inverted substrate platform support. In operation, the substrate 772 is attached to the inverted substrate table 72 and the chuck is used for suction, so that the substrate is adsorbed on the inverted substrate table 72 due to the air pressure difference between the inside and the outside of the chuck, the problem that the substrate 722 falls off from the inverted substrate table 72 under the action of gravity is solved, and the purpose of tightly attaching the substrate 722 and the inverted substrate table 72 is achieved.
To achieve the second object, the present invention also provides an apparatus comprising the chemical vapor deposition diamond system as above.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances such that, for example, embodiments of the invention described herein may be implemented in sequences other than those illustrated or described herein.
It is to be understood that the above-described embodiments are only some, but not all embodiments of the present invention. The invention is not limited to the foregoing embodiments. Rather, the invention extends to any novel feature or any novel combination of features disclosed herein, which is capable of implementation in other forms without departing from the spirit or essential characteristics thereof. It is intended that the specification be considered as exemplary only, with a true scope of the invention being indicated by the following claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Other variants and modifications of the invention will be obvious to those skilled in the art in view of the foregoing description, and it is not intended to exhaust all embodiments. All obvious changes and modifications of the present invention are within the scope of the present invention.
Furthermore, although the present specification describes embodiments, not every embodiment includes only a single technical solution, and those skilled in the art should make the specification as a whole, and the technical solutions in the embodiments may be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims (9)
1. A chemical vapor deposition diamond system, comprising:
the cavity is integrally formed;
the cavity cover is arranged on the cavity body in a sealing manner;
the deposition table is arranged between the cavity and the cavity cover;
the annular microwave feed-in window is arranged between the cavity cover and the deposition table;
the waveguide is fixedly arranged on the cavity cover;
the coaxial waveguide is simultaneously arranged in the waveguide and the cavity cover in a penetrating way, one end of the coaxial waveguide is fixedly sealed with the deposition table, and the other end of the coaxial waveguide is fixedly sealed with the waveguide;
the inverted substrate table assembly sealing device is fixedly arranged on the coaxial waveguide;
the inverted substrate table assembly is simultaneously arranged in the deposition table, the coaxial waveguide and the inverted substrate table assembly sealing device in a penetrating mode, the cavity cover, the deposition table, the annular microwave feed-in window, the coaxial waveguide, the inverted substrate table assembly sealing device and the inverted substrate table assembly enclose a vacuum sealing environment, and the inverted substrate table assembly can move up and down;
a plasma, said plasma excited by microwaves being located directly below the inverted substrate table assembly.
2. The chemical vapor deposition diamond system of claim 1, wherein the cavity, the cavity cover, the deposition station, the annular microwave feedthrough window, the coaxial waveguide, and the substrate table assembly are concentrically arranged.
3. The chemical vapor deposition diamond system of claim 2, wherein: at least one O-shaped sealing ring is arranged between the top of the annular microwave feed-in window and the cavity cover, and at least one O-shaped sealing ring is arranged between the bottom of the annular microwave feed-in window and the deposition table.
4. The chemical vapor deposition diamond system of claim 3, wherein the chamber cover is provided with a chamber cover annular groove, the deposition table is provided with a deposition table annular groove, and the O-ring is provided in the chamber cover annular groove and the deposition table annular groove.
5. The system of claim 1, wherein the annular microwave feedthrough window is made of quartz.
6. The chemical vapor deposition diamond system of claim 1, wherein: the inverted substrate table assembly comprises an inverted substrate table support and an inverted substrate table, and a substrate fixing module is arranged on the inverted substrate table.
7. The chemical vapor deposition diamond system of claim 6, wherein: the substrate fixing module is composed of a plurality of L-shaped fixing pieces fixedly arranged on the edge of the inverted substrate table, and the edge of each L-shaped fixing piece close to the plasma is a round angle.
8. The chemical vapor deposition diamond system of claim 7, wherein: the L-shaped fixing piece is made of elastic metal.
9. An apparatus, comprising: the chemical vapor deposition diamond system of any of claims 1-8.
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| CN202211376070.8A CN115652274A (en) | 2022-11-04 | 2022-11-04 | Chemical vapor deposition diamond system and equipment |
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| CN202211376070.8A CN115652274A (en) | 2022-11-04 | 2022-11-04 | Chemical vapor deposition diamond system and equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118186376A (en) * | 2024-03-15 | 2024-06-14 | 滁州爱沃富光电科技有限公司 | Microwave plasma equipment for silicon dioxide film growth |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118186376A (en) * | 2024-03-15 | 2024-06-14 | 滁州爱沃富光电科技有限公司 | Microwave plasma equipment for silicon dioxide film growth |
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| PB01 | Publication |