CN103086370A - Method for preparing graphene strip by adopting low-temperature chemical vapour deposition - Google Patents
Method for preparing graphene strip by adopting low-temperature chemical vapour deposition Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 53
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000011889 copper foil Substances 0.000 claims abstract description 55
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 150000007824 aliphatic compounds Chemical class 0.000 claims abstract description 7
- 150000001491 aromatic compounds Chemical class 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000004202 carbamide Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims 1
- 229960000935 dehydrated alcohol Drugs 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
本发明属于半导体材料制备领域，具体涉及一种石墨烯条带的低温化学气相沉积制备方法。本发明的步骤是首先对铜箔进行电解抛光，然后将铜箔放入石英管反应器内，在氢气条件下进行退火，然后于500~580℃，同时调节氢气的流速为2.4~3.0sccm，并通入液体碳源，在铜箔上生长石墨烯条带，控制压力在2.0~10.0Torr之间，控制生长时间为10~50min，得到生长在铜箔上的石墨烯条带。本发明方法中使用电解抛光的铜箔，使得铜箔表面的化学活性更高，采用的碳源为具有芳香族和脂肪族化合物特征以及介于芳香族和脂肪族化合物特征之间的含碳有机溶剂，与现有技术中普遍采用的气体碳源甲烷等相比，更加有利于石墨烯条带的低温生长。
The invention belongs to the field of semiconductor material preparation, and in particular relates to a low-temperature chemical vapor deposition preparation method of graphene strips. The steps of the present invention are first to electrolytically polish the copper foil, then put the copper foil into a quartz tube reactor, anneal under the condition of hydrogen, and then adjust the flow rate of hydrogen to 2.4 to 3.0 sccm at the same time at 500~580°C. A liquid carbon source is introduced to grow graphene strips on the copper foil, the pressure is controlled between 2.0~10.0Torr, and the growth time is controlled to be 10~50min to obtain graphene strips grown on the copper foil. Electropolished copper foil is used in the method of the present invention, so that the chemical activity of the copper foil surface is higher, and the carbon source adopted is a carbon-containing organic compound with the characteristics of aromatic and aliphatic compounds and between the characteristics of aromatic and aliphatic compounds. Compared with the gas carbon source methane commonly used in the prior art, the solvent is more conducive to the low-temperature growth of graphene strips.
Description
技术领域 technical field
本发明属于半导体材料制备领域，具体涉及一种石墨烯条带的低温化学气相沉积制备方法。 The invention belongs to the field of semiconductor material preparation, and in particular relates to a low-temperature chemical vapor deposition preparation method of graphene strips.
背景技术 Background technique
石墨烯(graphene)是由单层碳原子紧密堆积成的二维蜂巢结构的材料，其独特的晶体结构使单层石墨成为具有零带隙的半导体材料代表，其中单层石墨烯纳米条带因具有量子限域效应和边缘效应，而使得石墨烯条带能够实现对带隙的调节，有望被用于制作高电子迁移率和高转换速度的晶体管器件等。 Graphene is a material with a two-dimensional honeycomb structure that is tightly packed with single-layer carbon atoms. Its unique crystal structure makes single-layer graphite a representative of semiconductor materials with zero band gap. The single-layer graphene nanoribbons are due to It has quantum confinement effect and edge effect, so that the graphene strip can realize the adjustment of the band gap, and it is expected to be used to make transistor devices with high electron mobility and high switching speed.
目前，国内外制备石墨烯条带的典型方法包括：电子束刻蚀法、化学法以及外延生长法等，但是这些方法存在诸如：无法精确控制石墨烯条带裁剪尺寸、无法避免所制备的石墨烯条带中的缺陷和杂质等问题，特别是采用气相生长法所制备的石墨烯的生长温度较高，其典型生长温度甚至高于1000 ℃，给石墨烯的生产制备和应用推广带来难度。 At present, the typical methods for preparing graphene strips at home and abroad include: electron beam etching, chemical methods, and epitaxial growth methods, etc., but these methods have problems such as: the inability to accurately control the cutting size of graphene strips, and the inability to avoid the prepared graphite In particular, the growth temperature of graphene prepared by the vapor phase growth method is relatively high, and its typical growth temperature is even higher than 1000 °C, which brings difficulties to the production, preparation and application of graphene. .
发明内容 Contents of the invention
针对现有技术存在的问题，本发明提供一种石墨烯条带的低温化学气相沉积（CVD）制备方法，目的是在低于1000℃的条件下，直接制备出边缘光滑、具有规则长方形的单层石墨烯条带。 Aiming at the problems existing in the prior art, the present invention provides a low-temperature chemical vapor deposition (CVD) preparation method of graphene strips, the purpose of which is to directly prepare smooth-edged, regular rectangular single layers of graphene strips.
实现本发明目的的技术方案按照以下步骤进行： The technical scheme that realizes the object of the present invention carries out according to the following steps:
（1）电解抛光铜箔：以待抛光的铜箔作为阳极，铜板作阴极，将两个电极同时插入到电解抛光液中，控制电流恒定为1.0 ~ 1.5 A，通电70 ~ 120秒，对铜箔进行电解抛光，然后清洗抛光后的铜箔，用氮气吹干备用； (1) Electropolishing copper foil: use the copper foil to be polished as the anode, and the copper plate as the cathode, insert the two electrodes into the electropolishing solution at the same time, control the current at a constant 1.0 ~ 1.5 A, energize for 70 ~ 120 seconds, the copper The copper foil is electrolytically polished, and then the polished copper foil is cleaned and dried with nitrogen for later use;
（2）铜箔退火：将吹干的铜箔放入石英管反应器内，并置于水平加热炉恒温区，石英管反应器的一端与氢气瓶和液体碳源容器相连，另一端与真空泵相连，将石英管反应器内抽真空至10-2 Torr，通入流速为4.0 ~ 10.0 sccm的氢气，同时采用水平加热炉以5 ~ 50 ℃/min的速度升温加热， 加热至500 ~ 950 ℃时，保温 30 ~ 60 min退火； (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected with the hydrogen bottle and the liquid carbon source container, and the other end is connected with the vacuum pump Connected, the quartz tube reactor is evacuated to 10 -2 Torr, and hydrogen gas with a flow rate of 4.0 ~ 10.0 sccm is introduced. At the same time, a horizontal heating furnace is used to heat up at a rate of 5 ~ 50 ℃/min, and heated to 500 ~ 950 ℃ , keep warm for 30 ~ 60 min for annealing;
（3）石墨烯条带低温生长：退火后控制炉温为500 ~ 580 ℃，同时调节氢气的流速为2.4 ~ 3.0 sccm，通入液体碳源，液体碳源在石英管反应器内的负压作用下以气态形式进入到反应器内，在铜箔上生长石墨烯条带，控制石英管反应器内压力在2.0 ~ 10.0 Torr之间，控制生长时间为10 ~ 50 min； (3) Low-temperature growth of graphene strips: after annealing, control the furnace temperature to 500 ~ 580 ℃, and at the same time adjust the flow rate of hydrogen to 2.4 ~ 3.0 sccm, feed the liquid carbon source, and the negative pressure of the liquid carbon source in the quartz tube reactor Under the action, enter the reactor in gaseous form, grow graphene strips on the copper foil, control the pressure in the quartz tube reactor between 2.0 ~ 10.0 Torr, and control the growth time to 10 ~ 50 min;
（4）生长结束后，在真空条件下，炉冷至室温，得到生长在铜箔上的石墨烯条带。 (4) After the growth is completed, the furnace is cooled to room temperature under vacuum conditions to obtain graphene strips grown on copper foil.
所述的电解抛光液的配方是：去离子水1000 ml，磷酸500 ml，无水乙醇500 ml，异丙醇100 ml，尿素9 g。 The formula of the electrolytic polishing liquid is: 1000 ml of deionized water, 500 ml of phosphoric acid, 500 ml of absolute ethanol, 100 ml of isopropanol, and 9 g of urea.
所述的液体碳源为具有芳香族、脂肪族化合物特征及介于芳香族和脂肪族化合物特征之间的含碳有机溶剂。 The liquid carbon source is a carbon-containing organic solvent with the characteristics of aromatic and aliphatic compounds or between the characteristics of aromatic and aliphatic compounds.
氢气既作为还原气体，又作为载气和稀释气体。 Hydrogen is used not only as reducing gas, but also as carrier gas and dilution gas.
与现有技术相比，本发明的特点和有益效果是： Compared with prior art, feature and beneficial effect of the present invention are:
（1）本发明方法的石墨烯条带的生长温度低于现有技术中的CVD法生长石墨烯的温度； (1) The growth temperature of the graphene strip of the inventive method is lower than the temperature of the CVD method growth graphene in the prior art;
（2）本发明方法制备得到的石墨烯条带本身大多具有较平滑的边缘和规则的长方形，无需进行形状剪裁； (2) The graphene strips prepared by the method of the present invention mostly have smoother edges and regular rectangles, without the need for shape cutting;
（3）本发明方法制备得到的墨烯条带是单层石墨烯条带； (3) The graphene strip prepared by the method of the present invention is a single-layer graphene strip;
（4）本发明方法中作为石墨烯生长的催化剂衬底材料为经过电解抛光的铜箔，使得铜箔表面平滑且具有较高的表面化学活性；所采用的碳源为具有芳香族和脂肪族化合物特征以及介于芳香族和脂肪族化合物特征之间的含碳有机溶剂，与现有CVD技术中普遍采用的气体碳源甲烷等相比，该类液体有利于石墨烯条带的低温生长。 (4) The catalyst substrate material used as graphene growth in the method of the present invention is copper foil through electrolytic polishing, so that the surface of copper foil is smooth and has high surface chemical activity; Compound characteristics and carbon-containing organic solvents between the characteristics of aromatic and aliphatic compounds. Compared with the gas carbon source methane commonly used in the existing CVD technology, this type of liquid is conducive to the low-temperature growth of graphene strips.
附图说明 Description of drawings
图1为本发明低温制备石墨烯条带的装置示意图； Fig. 1 is the device schematic diagram of low temperature preparation graphene strip of the present invention;
图中，1：水平加热炉；2：石英管反应器；3：电解抛光的铜箔；4：液体碳源；5：碳源控制真空阀；6：真空计；7：球阀；8：真空泵；9：氢气瓶。 In the figure, 1: horizontal heating furnace; 2: quartz tube reactor; 3: electropolished copper foil; 4: liquid carbon source; 5: carbon source controlled vacuum valve; 6: vacuum gauge; 7: ball valve; 8: vacuum pump 9: Hydrogen cylinder.
图2是本发明实施例1制备的石墨烯条带的SEM照片和Raman光谱图； Fig. 2 is the SEM photograph and the Raman spectrogram of the graphene strip prepared by the embodiment of the present invention 1;
其中(a)为低温生长在电解抛光铜箔上的石墨烯条带的SEM照片； Where (a) is a SEM photo of graphene strips grown on electropolished copper foil at low temperature;
(b)单层石墨烯条带的典型激光Raman光谱图。 (b) Typical laser Raman spectra of single-layer graphene ribbons.
具体实施方式 Detailed ways
下面结合附图和实施例详述本发明。 The present invention will be described in detail below in conjunction with the accompanying drawings and examples.
本发明低温化学气相沉积制备石墨烯条带的装置示意图如图1所示，包括水平加热炉1、石英管反应器2、电解抛光的铜箔3、液体碳源4、真空阀5、真空计6、球阀7、真空泵8和氢气瓶，其中石英管反应器2作为石墨烯条带的反应生长腔体，放置在水平加热炉1内，将电解抛光的铜箔3放置在石英管反应器2内，并推进到水平加热炉1的恒温反应区内，石英管反应器2的一端与真空泵8通过球阀7连接，另一端与液体碳源4和氢气瓶9相连。
The schematic diagram of the device for preparing graphene strips by low-temperature chemical vapor deposition of the present invention is shown in Figure 1, including a horizontal heating furnace 1, a quartz tube reactor 2, an electropolished copper foil 3, a liquid carbon source 4, a vacuum valve 5, and a vacuum gauge 6. Ball valve 7,
本发明实施例中所用的铜箔是纯度为99.8%的铜箔美国Alfa-Aesar公司生产的厚度为25 μm的铜箔，并裁切成尺寸为2 cm ×1 cm的矩形； The copper foil used in the embodiment of the present invention is a copper foil with a thickness of 25 μm produced by the Alfa-Aesar company of the United States with a purity of 99.8%, and cut into a rectangle with a size of 2 cm × 1 cm;
本发明实施例中电解抛光的供电电源型号是Hewlett Packard 6612 型直流电源。 The power supply model of the electrolytic polishing in the embodiment of the present invention is a Hewlett Packard 6612 DC power supply.
实施例1 Example 1
（1）电解抛光铜箔：以待抛光的铜箔作为阳极，厚度为1mm的铜板作阴极，将两个电极同时插入到成分为：去离子水1000 ml，正磷酸500 ml，无水乙醇500 ml，异丙醇100 ml，尿素9 g的电解抛光液中，控制电流恒定为1.0A，通电120秒，对铜箔进行电解抛光，然后清洗抛光后的铜箔，用氮气吹干备用； (1) Electrolytically polished copper foil: take the copper foil to be polished as the anode, and the copper plate with a thickness of 1mm as the cathode, and insert the two electrodes at the same time. ml, 100 ml of isopropanol, and 9 g of urea in the electropolishing solution, control the current at a constant 1.0A, and conduct electropolishing on the copper foil for 120 seconds, then clean the polished copper foil, and dry it with nitrogen for later use;
（2）铜箔退火：将吹干的铜箔放入石英管反应器内，并置于水平加热炉恒温区，石英管反应器的一端与氢气瓶和盛有液体碳源无水乙醇的容器相连，另一端与真空泵相连，将石英管反应器内抽真空至9 ×10-3Torr，通入流速为5.8 sccm的氢气，同时采用水平加热炉以20 ℃/min的速度升温加热， 加热至950 ℃时，保温 30 min退火； (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected with the hydrogen bottle and the container containing the liquid carbon source absolute ethanol The other end is connected to a vacuum pump, the quartz tube reactor is evacuated to 9 × 10 -3 Torr, and hydrogen gas with a flow rate of 5.8 sccm is introduced. At the same time, a horizontal heating furnace is used to heat up at a rate of 20 ℃/min. Heating to At 950 ℃, hold for 30 minutes and anneal;
（3）石墨烯条带低温生长：退火后控制炉温为550 ℃，同时调节氢气的流速为3.0 sccm，通入液体碳源无水乙醇，无水乙醇在石英管反应器内的负压作用下以气态形式进入到反应器内，在铜箔上生长石墨烯条带，控制石英管反应器内压力在7.8 Torr，控制生长时间为30 min； (3) Low-temperature growth of graphene strips: after annealing, the furnace temperature is controlled to 550 °C, and the flow rate of hydrogen is adjusted to 3.0 sccm at the same time, and the liquid carbon source absolute ethanol is introduced, and the negative pressure of absolute ethanol in the quartz tube reactor Enter the reactor in gaseous form, grow graphene strips on the copper foil, control the pressure in the quartz tube reactor at 7.8 Torr, and control the growth time to 30 min;
（4）生长结束后，在真空条件下，炉冷至室温，得到生长在铜箔上的石墨烯条带。 (4) After the growth is completed, the furnace is cooled to room temperature under vacuum conditions to obtain graphene strips grown on copper foil.
采用FEI Quanta-600 环境扫描电镜对生长在铜箔上的石墨烯条带进行电镜扫描，得到如图2（a）所示的SEM照片，其激光共聚焦Raman光谱的单谱谱图如图2（b）所示，从图2（a）和图2（b）可以看出制备出的石墨烯条带为单层石墨烯，具有规则形状。 FEI Quanta-600 environmental scanning electron microscope was used to scan the graphene strips grown on copper foil, and the SEM photo shown in Figure 2(a) was obtained. The single-spectrum spectrum of the laser confocal Raman spectrum is shown in Figure 2 As shown in (b), it can be seen from Figure 2(a) and Figure 2(b) that the prepared graphene strips are single-layer graphene with regular shapes.
实施例2 Example 2
（1）电解抛光铜箔：以待抛光的铜箔作为阳极，厚度为1mm的铜板作阴极，将两个电极同时插入到成分为：去离子水1000 ml，正磷酸500 ml，无水乙醇500 ml，异丙醇100 ml，尿素9 g的电解抛光液中，控制电流恒定为1.2A，通电90秒，对铜箔进行电解抛光，然后清洗抛光后的铜箔，用氮气吹干备用； (1) Electrolytically polished copper foil: take the copper foil to be polished as the anode, and the copper plate with a thickness of 1mm as the cathode, and insert the two electrodes at the same time. ml, isopropanol 100 ml, urea 9 g in the electropolishing solution, control the current constant at 1.2A, electrify the copper foil for 90 seconds, then clean the polished copper foil, and dry it with nitrogen for later use;
（2）铜箔退火：将吹干的铜箔放入石英管反应器内，并置于水平加热炉恒温区，石英管反应器的一端与氢气瓶和盛有液体碳源四氢呋喃的容器相连，另一端与真空泵相连，将石英管反应器内抽真空至10-2Torr，通入流速为4.0sccm的氢气，同时采用水平加热炉以5 ℃/min的速度升温加热， 加热至500 ℃时，保温 60 min退火； (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected to the hydrogen bottle and the container containing the liquid carbon source tetrahydrofuran. The other end is connected to a vacuum pump, and the quartz tube reactor is evacuated to 10 -2 Torr, and hydrogen gas with a flow rate of 4.0 sccm is introduced. At the same time, a horizontal heating furnace is used to heat up at a rate of 5 ℃/min. When heated to 500 ℃, Heat preservation for 60 min and anneal;
（3）石墨烯条带低温生长：退火后控制炉温为500 ℃，同时调节氢气的流速为2.4 sccm，通入液体碳源四氢呋喃，液体碳源四氢呋喃在石英管反应器内的负压作用下以气态形式进入到反应器内，在铜箔上生长石墨烯条带，控制石英管反应器内压力在10.0 Torr，控制生长时间为50 min； (3) Low-temperature growth of graphene strips: After annealing, the furnace temperature is controlled to 500 °C, and the flow rate of hydrogen is adjusted to 2.4 sccm at the same time, and the liquid carbon source tetrahydrofuran is introduced, and the liquid carbon source tetrahydrofuran is under the negative pressure in the quartz tube reactor Enter the reactor in gaseous form, grow graphene strips on the copper foil, control the pressure in the quartz tube reactor at 10.0 Torr, and control the growth time to 50 min;
（4）生长结束后，在真空条件下，炉冷至室温，得到生长在铜箔上的石墨烯条带，经检测，制备出的石墨烯条带为单层石墨烯，具有规则形状。 (4) After the growth is completed, the furnace is cooled to room temperature under vacuum conditions to obtain graphene strips grown on copper foil. After testing, the prepared graphene strips are single-layer graphene with a regular shape.
实施例3 Example 3
（1）电解抛光铜箔：以待抛光的铜箔作为阳极，厚度为1mm的铜板作阴极，将两个电极同时插入到成分为：去离子水1000 ml，正磷酸500 ml，无水乙醇500 ml，异丙醇100 ml，尿素9 g的电解抛光液中，控制电流恒定为1.5A，通电70秒，对铜箔进行电解抛光，然后清洗抛光后的铜箔，用氮气吹干备用； (1) Electrolytically polished copper foil: take the copper foil to be polished as the anode, and the copper plate with a thickness of 1mm as the cathode, and insert the two electrodes at the same time. ml, isopropanol 100 ml, urea 9 g in the electropolishing solution, control the current constant at 1.5A, energize for 70 seconds, electropolish the copper foil, then clean the polished copper foil, and dry it with nitrogen for later use;
（2）铜箔退火：将吹干的铜箔放入石英管反应器内，并置于水平加热炉恒温区，石英管反应器的一端与氢气瓶和盛有液体碳源二甲苯的容器相连，另一端与真空泵相连，将石英管反应器内抽真空至8×10-3Torr，通入流速为10.0sccm的氢气，同时采用水平加热炉以50 ℃/min的速度升温加热， 加热至800 ℃时，保温 45 min退火； (2) Copper foil annealing: Put the dried copper foil into the quartz tube reactor and place it in the constant temperature zone of the horizontal heating furnace. One end of the quartz tube reactor is connected to the hydrogen bottle and the container containing the liquid carbon source xylene , the other end is connected to a vacuum pump, the quartz tube reactor is evacuated to 8×10 -3 Torr, and hydrogen gas with a flow rate of 10.0 sccm is introduced. At the same time, a horizontal heating furnace is used to heat up at a rate of 50 ℃/min, and heated to 800 At ℃, hold for 45 minutes and anneal;
（3）石墨烯条带低温生长：退火后控制炉温为580 ℃，同时调节氢气的流速为2.8 sccm，通入液体碳源二甲苯，液体碳源二甲苯在石英管反应器内的负压作用下以气态形式进入到反应器内，在铜箔上生长石墨烯条带，控制石英管反应器内压力在2.0 Torr，控制生长时间为10 min； (3) Low-temperature growth of graphene strips: after annealing, control the furnace temperature to 580 ℃, and at the same time adjust the flow rate of hydrogen to 2.8 sccm, feed the liquid carbon source xylene, and the negative pressure of the liquid carbon source xylene in the quartz tube reactor Under the action, enter the reactor in gaseous form, grow graphene strips on the copper foil, control the pressure in the quartz tube reactor at 2.0 Torr, and control the growth time to 10 min;
（4）生长结束后，在真空条件下，炉冷至室温，得到生长在铜箔上的石墨烯条带，制备出的石墨烯条带为单层石墨烯，具有规则形状。 (4) After the growth is completed, the furnace is cooled to room temperature under vacuum conditions to obtain graphene strips grown on copper foil. The prepared graphene strips are single-layer graphene with regular shapes.
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