CN114643651B - Silicon carbide wafer waxing method and auxiliary waxing device - Google Patents
Silicon carbide wafer waxing method and auxiliary waxing device Download PDFInfo
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- CN114643651B CN114643651B CN202210277587.5A CN202210277587A CN114643651B CN 114643651 B CN114643651 B CN 114643651B CN 202210277587 A CN202210277587 A CN 202210277587A CN 114643651 B CN114643651 B CN 114643651B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 169
- 238000004018 waxing Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000919 ceramic Substances 0.000 claims abstract description 96
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 180
- 239000007787 solid Substances 0.000 claims description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000003892 spreading Methods 0.000 claims description 6
- 230000007480 spreading Effects 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 3
- 230000005484 gravity Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a silicon carbide wafer waxing method and an auxiliary waxing device, wherein the silicon carbide wafer waxing method comprises the following steps: placing the silicon carbide wafer on a ceramic disc by using an auxiliary wax-sticking device, and heating the ceramic disc; when the ceramic disc reaches a preset temperature, waxing is carried out at the center position of the surface to be waxed of the silicon carbide wafer; the surface to be waxed is one surface of the silicon carbide wafer far away from the ceramic disc; taking down the waxed silicon carbide wafer from the ceramic disc by utilizing an auxiliary wax pasting device and cooling to obtain the silicon carbide wafer with the wax layer; placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by utilizing an auxiliary wax pasting device so as to bond the silicon carbide wafer and the ceramic disc; wherein the wax layer is oriented toward the ceramic disk. According to the invention, the auxiliary wax pasting device is adopted to manually paste the wax on the silicon carbide wafer, so that the requirement on the skill of workers in wax pasting is reduced, air bubbles can be eliminated in manual wax pasting, the high efficiency of manual wax pasting is realized, and the rate of finished products of the paste is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer waxing, in particular to a silicon carbide wafer waxing method and an auxiliary waxing device.
Background
At present, in the field of upstream wax-sticking processing of silicon carbide wafers, a traditional wax-sticking device needs to be subjected to multiple steps of heating, waxing, sticking, tabletting, waxing and the like, and is low in efficiency. Although there are also high-efficiency automatic chip mounting devices on the market, the device is expensive, and manual wax mounting cannot be avoided by engineers in experiments due to the small number of chips in the early development stage or in the stage of testing product performance by downstream manufacturers.
The conventional manual wafer waxing process needs to heat the ceramic disc to a certain temperature in advance to ensure that the adhesive wax can be melted, the wax layer is coated at the position, which is required to be adhered, of the periphery of the ceramic disc, the waxing area is larger than the area of the wafer, and then the wafer to be adhered is placed on the liquid wax layer, so that the surface of the wafer is finally covered with the wax layer entirely, and the waxing operation is completed. When the wax is melted and the wafer is compacted by the cylinder pressure of the wax attaching machine, the air around the wafer is easy to cause waxing bubbles in view of the thickness of the wax layer and the difference of the skillness of the attaching of workers, and if the air cannot be timely discharged in the process of compacting the wafer, the air bubbles remain in the middle of the wax layer. Therefore, the traditional manual wax pasting mode is not beneficial to the wafer wax pasting yield, not only reduces the working efficiency, but also increases the enterprise cost.
Disclosure of Invention
The invention provides a silicon carbide wafer wax-sticking method and an auxiliary wax-sticking device, wherein the silicon carbide wafer wax-sticking method adopts a natural tape casting mode to stick wax, reduces the requirement on the skill of workers in wax sticking, can eliminate bubbles in manual wax sticking, realizes high efficiency of manual wax sticking and improves the rate of finished products of the adhesive plaster.
In order to achieve the above object, in a first aspect, the present invention provides a silicon carbide wafer waxing method, comprising:
placing a silicon carbide wafer on a ceramic disc by using an auxiliary wax-sticking device, and heating the ceramic disc;
When the ceramic disc reaches a preset temperature, waxing is carried out at the center position of the surface to be waxed of the silicon carbide wafer; the surface to be waxed is one surface of the silicon carbide wafer, which is far away from the ceramic disc;
Taking the waxed silicon carbide wafer off the ceramic disc by utilizing an auxiliary wax pasting device and cooling to obtain the silicon carbide wafer with the wax layer;
Placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by utilizing an auxiliary wax pasting device so as to bond the silicon carbide wafer and the ceramic disc; wherein the wax layer is oriented towards the ceramic disc.
Preferably, the preset temperature is 80-140 ℃.
Preferably, the waxing is a solid adhesive wax.
Preferably, the placing the silicon carbide wafer with the wax layer on the ceramic disc reaching the preset temperature by using an auxiliary wax pasting device to realize the adhesion of the silicon carbide wafer and the ceramic disc comprises the following steps:
and placing the ceramic disc reaching the preset temperature on a vibration device, and after the wax layer is melted, spreading the wax layer to the whole silicon carbide wafer through the vibration device to bond the silicon carbide wafer and the ceramic disc.
Preferably, the auxiliary wax pasting device is provided with a through hole, and the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer.
Preferably, the placing the silicon carbide wafer with the wax layer on the ceramic disc reaching the preset temperature by using an auxiliary wax pasting device to realize the adhesion of the silicon carbide wafer and the ceramic disc, and the method further comprises:
Placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by utilizing an auxiliary wax pasting device, and after the wax layer is melted, pumping away the auxiliary wax pasting device along the notch direction of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein, the wax layer is located in the through hole.
In a second aspect, the present invention provides an auxiliary wax application device for the silicon carbide wafer wax application method described in the first aspect, the auxiliary wax application device comprising: the device comprises a handle, a tray and a limiting part;
The handle is fixedly connected with the tray, and the limit part is arranged at the edge of the tray;
the tray is used for bearing silicon carbide wafers so as to place the silicon carbide wafers on a ceramic disc or take the silicon carbide wafers off the ceramic disc;
The tray is provided with a through hole; the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer;
The limiting component is used for limiting the silicon carbide wafer.
Preferably, the upper surface of the tray is of an inclined surface structure.
Preferably, the through hole is U-shaped.
Preferably, the diameter of the tray is the same as the diameter of the silicon carbide wafer.
Preferably, the tray is made of a heat conductive metal material, preferably at least one of iron, aluminum, copper.
Preferably, one side of the tray is also provided with a straight-edge notch, and the straight-edge notch is matched with the positioning edge of the silicon carbide wafer;
and when the straight-edge notch is overlapped with the positioning edge, distinguishing the carbon surface and the silicon surface of the silicon carbide wafer through the straight-edge notch.
More preferably, the length of the straight edge notch is the same as the length of the positioning edge of the silicon carbide wafer.
Compared with the prior art, the invention has at least the following beneficial effects:
In the invention, a local waxing mode is adopted, the waxing is only carried out at the central position of the silicon carbide wafer, then the cooled waxed silicon carbide wafer is arranged on the ceramic disk with the waxed surface facing the ceramic disk, the wax is gradually spread to the edge from the central position by virtue of a gravity action by means of a solid bonding wax heated natural casting mode, and meanwhile, the air below the wafer is extruded, so that the adhesion of the silicon carbide wafer and the ceramic disk is realized, the problem of bubble residence in a wax layer is effectively avoided, the bubbles are eliminated in manual wax pasting, the experience requirement on manual wax pasting of workers is greatly reduced, the high efficiency of manual wax pasting is realized, and the yield of manual wax pasting is improved. In addition, the auxiliary wax-sticking device is adopted to stick the silicon carbide wafer wax, so that the risk of scalding personnel caused by high temperature of the ceramic disc during manual wax sticking is avoided, and meanwhile, the device is utilized to enable the operation to be simpler and more convenient, so that the manual wax-sticking efficiency is further improved.
Drawings
FIG. 1 is a flow chart of a method for attaching a silicon carbide wafer to wax according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of a silicon carbide wafer wax application provided in an embodiment of the present invention;
FIG. 3 is a top view of an auxiliary wax-applying device according to an embodiment of the present invention;
fig. 4 is a front view of an auxiliary wax-sticking device according to an embodiment of the present invention;
in the figure: 201: a silicon carbide wafer; 202: a wax layer; 203: a ceramic disc; 204: a vibration device; 301: a handle; 302: a tray; 303: a limiting member; 3021: a through hole; 3022: straight edge notches.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention and the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by persons of ordinary skill in the art without making any inventive effort based on the embodiments of the present invention are within the scope of protection of the present invention.
The invention provides a silicon carbide wafer waxing method, which is shown in figure 1 and comprises the following steps:
step 100: placing the silicon carbide wafer on a ceramic disc by using an auxiliary wax-sticking device, and heating the ceramic disc;
step 102: when the ceramic disc reaches a preset temperature, waxing is carried out at the center position of the surface to be waxed of the silicon carbide wafer; the surface to be waxed is one surface of the silicon carbide wafer far away from the ceramic disc;
Step 104: taking down the waxed silicon carbide wafer from the ceramic disc by utilizing an auxiliary wax pasting device and cooling to obtain the silicon carbide wafer with the wax layer;
step 106: placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by utilizing an auxiliary wax pasting device so as to bond the silicon carbide wafer and the ceramic disc; wherein the wax layer is oriented toward the ceramic disk.
The waxing area is smaller than the area of the silicon carbide wafer.
In step 100 of the present invention, heat transfer from the ceramic disc to the silicon carbide wafer can be accomplished more quickly by means of the auxiliary wax application device.
In the present invention, the cooling is performed by subjecting the waxed silicon carbide wafer to cooling at room temperature (25 ℃) for 30 to 60 seconds in step 104 to resolidify the wax layer and form a convex wax layer at the center, facilitating the flip-over operation in step 106, even if the waxed surface of the waxed silicon carbide wafer is facing the ceramic disc (i.e., the wax layer is facing the ceramic disc). The specific cooling time depends on the actual situation.
In the invention, in step 106, the waxed silicon carbide wafer with the raised wax layer obtained in step 104 is turned over, one surface with the wax layer faces downwards, the waxed silicon carbide wafer is replaced on a ceramic disc reaching a preset temperature by utilizing an auxiliary wax pasting device, then the auxiliary wax pasting device is taken down, the wax layer is remelted under the heating state and is vertical under the influence of gravity until the wax layer is fully spread on the ceramic disc to be naturally contacted and bonded, and simultaneously the wax layer is naturally cast and spread under the action of gravity of the silicon carbide wafer and extruded out of air below the wafer, so that the lower space of the whole silicon carbide wafer is finally filled, and simultaneously the thickness of the wax layer is synchronously spread in the spreading process of the wax layer.
After the bonding of the silicon carbide wafer to the ceramic disc is completed in step 106, the final wax application process of the patch is completed using wafer lamination and cooling procedures conventional in the art.
In the invention, a local waxing mode is adopted, the waxed silicon carbide wafer is only coated at the central position of the silicon carbide wafer, then the cooled waxed silicon carbide wafer is placed on the ceramic disk with the surface of the waxed silicon carbide wafer facing the ceramic disk, the wax is gradually spread to the edge from the central position by virtue of a gravity action by means of a solid bonding wax heated natural casting mode, and meanwhile, the air below the wafer is extruded, so that the adhesion of the silicon carbide wafer and the ceramic disk is realized, the problem of bubble residence in a wax layer is effectively avoided, the experience requirement on manual wax pasting of workers is greatly reduced, the high efficiency of manual wax pasting is realized, and the yield of manual wax pasting is improved. Meanwhile, because a local waxing mode is adopted, compared with the traditional manual waxing of the whole crystal face, the use amount of wax is greatly reduced. In addition, the auxiliary wax-sticking device is adopted to stick the silicon carbide wafer wax, so that the risk of scalding personnel caused by high temperature of the ceramic disc during manual wax sticking is avoided, and meanwhile, the device is utilized to enable the operation to be simpler and more convenient, so that the manual wax-sticking efficiency is further improved.
According to some preferred embodiments, in step 102, the preset temperature is 80-140 ℃ (e.g., may be 80 ℃, 85 ℃, 90 ℃, 95 ℃, 100 ℃, 105 ℃, 110 ℃, 115 ℃, 120 ℃, 125 ℃, 130 ℃, 135 ℃, or 140 ℃).
According to some preferred embodiments, in step 102, the waxing uses a solid bonding wax.
The solid adhesive wax includes, but is not limited to, any of general type, temperature resistance, high adhesion, alcohol dissolution type, and the like. In addition, the waxing range is not excessively large and is positioned at the center of the silicon carbide wafer, generally, cylindrical solid bonding wax with the diameter of about 1 cm to 4cm is selected, the waxing thickness is dependent on the size of the silicon carbide wafer, and the surface of the silicon carbide wafer to be waxed can be completely covered after the wax layer is spread. Therefore, when the manual waxing is carried out, the waxing dosage is only required to be ensured to be larger than the actually required wax pasting dosage, and excessive wax can be removed in the later period, and meanwhile, the waxing in the center position is beneficial to more uniformly casting the wax to the edge of the silicon carbide wafer.
In the present invention, the ceramic disc is heated to a preset temperature in order to melt the solid bonding wax used and to be able to maintain a liquid state at the preset temperature.
According to some preferred embodiments, step 106 further comprises:
And placing the ceramic disc reaching the preset temperature on a vibration device, and after the wax layer is melted, spreading the wax layer to the whole silicon carbide wafer through the vibration device to realize the adhesion of the silicon carbide wafer and the ceramic disc.
Specifically, as shown in the schematic diagram of the silicon carbide wafer wax-sticking in fig. 2, the ceramic disc is placed on the vibration device, and after the wax layer is melted, the wax layer is spread to the whole silicon carbide wafer through the vibration device and by means of the gravity of the silicon carbide wafer, so that the adhesion of the silicon carbide wafer and the ceramic disc is realized. Therefore, the casting and uniform distribution of the liquid wax can be further accelerated by the aid of the vibration device, and the thickness uniformity of the wax layer under the silicon carbide wafer is improved. The vibration time of the vibration device may be set to 20 to 40 seconds according to the specification of the silicon carbide wafer.
According to some preferred embodiments, the auxiliary wax-applying device is provided with a through hole, and the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer.
It should be noted that the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer, which means that the center position coincides with the through hole, and the center position falls within the range of the through hole, so that the adhesion is performed by adopting an automatic casting mode subsequently.
According to some preferred embodiments, step 106 further comprises:
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching a preset temperature by utilizing an auxiliary wax pasting device, and after the wax layer is melted, pumping the auxiliary wax pasting device away along the notch direction of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein the wax layer is positioned in the through hole.
In step 106 of the invention, the waxed silicon carbide wafer with the raised wax layer obtained in step 104 is turned over, one surface with the wax layer faces downwards, the waxed silicon carbide wafer is replaced on a ceramic disc reaching a preset temperature by utilizing an auxiliary wax pasting device, the raised wax layer falls into a through hole of the auxiliary wax pasting device, the auxiliary wax pasting device is slowly pulled away along the notch direction of the through hole after the wax layer is heated and remelted and is vertical under the influence of gravity until the through hole is filled with the wax layer, and the wax layer is naturally cast and spread under the action of gravity of the silicon carbide wafer and is extruded out of air below the wafer, so that the lower space of the whole silicon carbide wafer is finally filled, and simultaneously the thickness of the wax layer is synchronously spread and thinned in the spreading process of the wax layer.
The invention also provides an auxiliary wax-sticking device based on the silicon carbide wafer wax-sticking method, as shown in figure 3, the auxiliary wax-sticking device comprises: a handle 301, a tray 302 and a limiting member 303;
The handle 301 is fixedly connected with the tray 302, and a limit part 303 is arranged at the edge of the tray 301;
the tray 301 is used to carry silicon carbide wafers to place or remove silicon carbide wafers on or from ceramic disks;
The tray 302 is provided with a through hole 3021; and the through hole 3021 corresponds to the center position of the surface to be waxed of the silicon carbide wafer;
the limiting member 303 is used for limiting the silicon carbide wafer.
It should be noted that the drawings of the present invention are provided for illustrative purposes only, and the proportion of each component in the drawings is not necessarily consistent with the actual product. The handle can also be provided with a heat insulation component.
In the invention, the auxiliary wax-sticking device aims to facilitate the picking and placing operation of heating the silicon carbide wafer, improve the operation efficiency and the working safety and avoid the scalding of operators. In addition, the limiting component limits excessive free movement of the silicon carbide wafer, and avoids the risk of accidental falling of the wafer caused by overlarge amplitude during manual operation.
The number of the limiting parts is at least two, and the arrangement of the at least two limiting parts is at a position which does not influence the extraction of the silicon carbide wafer along the notch direction of the through hole. Preferably, the limiting member is located in any 1/4 circular arc (the circular arc is the perimeter calculated by the diameter of the tray) at both ends of the handle.
According to some preferred embodiments, as shown in fig. 4, the upper surface of the tray 302 is a beveled structure.
In the invention, the upper surface of the tray is set to be a micro-inclined surface structure, and the lower surface is set to be a plane, so that the auxiliary wax pasting device, the ceramic disc and the silicon carbide wafer can be better attached, heat transfer is quickened, the wax layer is convenient to be remelted and is influenced by self gravity to be beneficial to forming a single convex wax layer, the micro-lifting posture is not manually maintained, natural bonding with the ceramic disc is finally completed, and the hidden trouble that bubbles are possibly formed due to multipoint contact between the wax layer and the ceramic disc is eliminated; and meanwhile, the inclined plane structure is also beneficial to taking and placing silicon carbide wafers.
According to some preferred embodiments, the through hole 3021 is U-shaped as shown in fig. 3.
According to the invention, the U-shaped through hole of the tray is beneficial to natural adhesion of the wax layer with the ceramic tray under the influence of self gravity after remelting, facilitates subsequent pulling-out operation of the tray, and improves the wax attaching operation efficiency.
According to some preferred embodiments, the diameter of the tray is the same as the diameter of the silicon carbide wafer.
According to some more preferred embodiments, as shown in fig. 3, the through hole 3021 is U-shaped, when the diameter of the tray is the same as that of the silicon carbide wafer, the center of the circle where the arc surface of the U-shaped is coincident with the center of the circle of the silicon carbide wafer, so that the center position of the surface to be waxed of the silicon carbide wafer can be directly determined directly through the U-shaped through hole during waxing, thereby further ensuring that the wax at the center position can be more uniformly cast to the whole silicon carbide wafer.
According to some preferred embodiments, the tray 302 is made of a thermally conductive metallic material, preferably at least one of iron, aluminum, copper.
At least one kind is a mixture of any one or any plurality of kinds mixed in any proportion. Wherein, the mixture of any several of iron, aluminum and copper mixed in proportion is alloy. Trays made of thermally conductive metallic materials can more quickly achieve heat transfer from the ceramic disc to the silicon carbide wafer.
According to some preferred embodiments, as shown in fig. 3, one side of the tray 302 is further provided with a straight edge notch 3022, and the straight edge notch 3022 matches with the positioning edge of the silicon carbide wafer; wherein, when straight edge notch 3022 is coincident with the locating edge, it is used to distinguish the carbon face and the silicon face of the silicon carbide wafer by the straight edge notch.
In the invention, the straight-edge notch of the tray is used for conveniently determining whether the upper surface of the silicon carbide wafer is a carbon surface or a silicon surface during waxing operation. When the positioning edge of the silicon carbide wafer is overlapped with the straight edge notch of the tray, the upper surface of the silicon carbide wafer is a silicon surface at the moment, and otherwise, the upper surface of the silicon carbide wafer is a carbon surface.
According to some more preferred embodiments, the length of the straight edge notch 3022 is the same as the length of the locating edge of the silicon carbide wafer.
When the diameter of the tray is the same as the diameter of the silicon carbide wafer, the length of the straight-side notch is the same as the length of the positioning side of the silicon carbide wafer.
In order to more clearly illustrate the technical scheme and advantages of the present invention, the present invention will be further described below with reference to examples.
In the following examples, the auxiliary wax applying device is shown in fig. 3 and 4.
Example 1
A method of manually waxing a silicon carbide wafer of size 4 inches, the method comprising:
step (1): placing the surface to be waxed of a 4-inch silicon carbide wafer upwards on an auxiliary wax pasting device, and then placing the silicon carbide wafer on a ceramic disc for heating by utilizing a tray (made of iron) of the auxiliary wax pasting device, wherein the preset temperature of the ceramic disc is 100 ℃;
Step (2): when the preset temperature of the ceramic disc reaches 100 ℃, the silicon carbide wafer is preheated, and the center of the upper surface of the silicon carbide wafer is coated with the alcohol-soluble solid bonding wax, wherein the waxing area is in a round shape with the diameter of 3 cm;
Step (3): removing the waxed silicon carbide wafer from the ceramic disc by using an auxiliary wax pasting device, and cooling the wax layer again to solidify at room temperature (25 ℃);
step (4): manually turning over the cooled silicon carbide wafer with the raised wax layer to enable the surface with the wax layer to face downwards and face the ceramic disc, and then putting the silicon carbide wafer back on the ceramic disc reaching the preset temperature by utilizing an auxiliary wax pasting device; wherein the raised wax layer is positioned in the through hole of the tray;
Step (5): under the heating state, the raised wax layer on the silicon carbide wafer is remelted and sagged under the influence of gravity, and a single-protrusion wax layer is formed in the U-shaped through hole until the single-protrusion wax layer is contacted with and bonded with the ceramic disc; then the auxiliary wax pasting device is pulled away along the notch direction of the U-shaped through hole, the melted wax layer is naturally cast and spread under the gravity action of the silicon carbide wafer, the air below the extruded wafer is finally filled in the lower space of the whole wafer, and simultaneously the thickness of the wax layer is synchronously spread and thinned in the spreading process of the wax layer; meanwhile, the ceramic disc on the vibration table also increases the fluidity of the wax layer through the vibration applied by the vibration table, and continuously vibrates for 20s after the wax layer is spread, so that the internal space of the wax layer is uniformly redistributed;
step (6): the wax pasting process of the silicon carbide wafer is completed by adopting the conventional tabletting and cooling procedures.
Example 2
Example 2 is substantially the same as example 1 except that:
a silicon carbide wafer having a size of 6 inches was used; wherein the tray of the auxiliary wax-sticking device is made of aluminum;
The preset temperature of the ceramic disc is 120 ℃; in the step (2), a temperature-resistant solid bonding wax is adopted, and the waxing area is in a round shape with the diameter of 4 cm; and (5) continuously vibrating the vibrating table for 40s after the wax layer is spread.
Example 3
Example 3 is substantially the same as example 1 except that:
a silicon carbide wafer having a size of 2 inches was used; wherein the tray of the auxiliary wax-sticking device is made of copper-iron alloy;
the preset temperature of the ceramic disc is 110 ℃; in the step (2), high-viscosity solid bonding wax is adopted, and the waxing area is round with the diameter of 1 cm.
Comparative example 1
A method of conventional manual waxing, the method comprising:
step (1): heating the ceramic disc and preheating to 120 ℃;
step (2): when the ceramic disc reaches 120 ℃, waxing is carried out on a region to be adhered with wax on the ceramic disc, wherein the area of the waxed region is larger than that of the silicon carbide wafer;
step (3): removing excessive wax by a doctor blade, coating the wax layer uniformly, and then manually placing a 6-inch silicon carbide wafer on the uniformly coated wax layer to bond the silicon carbide wafer and the ceramic disc;
step (4): the wax pasting process of the silicon carbide wafer is completed by adopting the conventional tabletting and cooling procedures.
The wax application process completed by the manual wax application method for silicon carbide wafers of examples 1 to 3 was adopted, the space between the silicon carbide wafer and the ceramic disk was completely filled with the adhesive wax layer, and no bubbles remained, while the thickness uniformity of the wax layer was high. In comparative example 1, since the silicon carbide wafer is a thin layer material, when the wafer is manually placed, the wafer itself is slightly deformed and the thickness of the wax layer is not uniform at different positions due to the difference in the hand pinching positions, when the wax layer is contacted, the air between the wafer and the wax layer cannot be timely extruded, and when the wax layer and the wafer are contacted and communicated with each other, a small amount of gas is sealed by the wax layer and stays below the wafer to form bubbles, so that the conventional manual wax pasting method has certain experience requirements for operators and has lower yield.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention. The invention is not described in detail in a manner known to those skilled in the art.
Claims (10)
1. A method for waxing a silicon carbide wafer, comprising the steps of:
placing a silicon carbide wafer on a ceramic disc by using an auxiliary wax-sticking device, and heating the ceramic disc;
When the ceramic disc reaches a preset temperature, waxing is carried out at the center position of the surface to be waxed of the silicon carbide wafer; the surface to be waxed is one surface of the silicon carbide wafer, which is far away from the ceramic disc;
Taking the waxed silicon carbide wafer off the ceramic disc by utilizing an auxiliary wax pasting device and cooling to obtain the silicon carbide wafer with the wax layer; the auxiliary wax pasting device is provided with a through hole, and the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer;
placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by utilizing an auxiliary wax pasting device so as to bond the silicon carbide wafer and the ceramic disc; wherein the wax layer is oriented towards the ceramic disc; placing the silicon carbide wafer with the wax layer on a ceramic disc reaching the preset temperature by utilizing an auxiliary wax pasting device, and after the wax layer is melted, pumping away the auxiliary wax pasting device along the notch direction of the through hole so as to spread the wax layer to the whole silicon carbide wafer, thereby realizing the adhesion of the silicon carbide wafer and the ceramic disc; wherein, the wax layer is located in the through hole.
2. The method for attaching a wax to a silicon carbide wafer according to claim 1, wherein,
The preset temperature is 80-140 ℃.
3. The method for attaching a wax to a silicon carbide wafer according to claim 1, wherein,
The waxing adopts solid bonding wax.
4. The method for bonding a silicon carbide wafer according to claim 1, wherein the step of placing the silicon carbide wafer having the wax layer on a ceramic plate having reached the predetermined temperature by using an auxiliary wax bonding device to bond the silicon carbide wafer to the ceramic plate comprises:
and placing the ceramic disc reaching the preset temperature on a vibration device, and after the wax layer is melted, spreading the wax layer to the whole silicon carbide wafer through the vibration device to bond the silicon carbide wafer and the ceramic disc.
5. An auxiliary wax applying device based on the silicon carbide wafer wax applying method as claimed in any one of claims 1 to 4, characterized in that the auxiliary wax applying device comprises: the device comprises a handle, a tray and a limiting part;
The handle is fixedly connected with the tray, and the limit part is arranged at the edge of the tray;
the tray is used for bearing silicon carbide wafers so as to place the silicon carbide wafers on a ceramic disc or take the silicon carbide wafers off the ceramic disc;
The tray is provided with a through hole; the through hole corresponds to the center position of the surface to be waxed of the silicon carbide wafer;
The limiting component is used for limiting the silicon carbide wafer.
6. The auxiliary wax applying device of claim 5, wherein,
The upper surface of the tray is of an inclined surface structure; and/or
The through holes are U-shaped.
7. The auxiliary wax applying device of claim 5, wherein,
The diameter of the tray is the same as the diameter of the silicon carbide wafer; and/or
The tray is made of a heat-conducting metal material.
8. The auxiliary wax applying device of claim 7, wherein,
The metal material is at least one of iron, aluminum and copper.
9. The auxiliary wax applying device according to any one of claims 5 to 8, wherein,
A straight-edge notch is further formed in one side of the tray and matched with the positioning edge of the silicon carbide wafer;
and when the straight-edge notch is overlapped with the positioning edge, distinguishing the carbon surface and the silicon surface of the silicon carbide wafer through the straight-edge notch.
10. The auxiliary wax applying device of claim 9, wherein,
The length of the straight-edge notch is the same as the length of the positioning edge of the silicon carbide wafer.
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| CN116453984B (en) * | 2023-06-19 | 2023-08-18 | 通威微电子有限公司 | Wax pasting fixing device and wax pasting fixing method for wafers with different sizes |
| CN118553649B (en) * | 2024-07-24 | 2024-09-20 | 常州臻晶半导体有限公司 | Silicon carbide wafer chip mounter and chip mounting process thereof |
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