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CN210058835U - Silicon carbide wafer wax sticking device - Google Patents

Silicon carbide wafer wax sticking device Download PDF

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Publication number
CN210058835U
CN210058835U CN201920718120.3U CN201920718120U CN210058835U CN 210058835 U CN210058835 U CN 210058835U CN 201920718120 U CN201920718120 U CN 201920718120U CN 210058835 U CN210058835 U CN 210058835U
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China
Prior art keywords
wafer
wax
adsorption
silicon carbide
control box
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CN201920718120.3U
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Chinese (zh)
Inventor
郑东
王鑫
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Qingdao Huaxinjingdian Technology Co ltd
Qingdao Xinjiaxing Electronic Technology Co ltd
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Qingdao Jiaxing Electronic Technology Co Ltd
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  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The utility model belongs to the technical field of semiconductor wafer pastes wax polishing, a silicon carbide wafer pastes wax device is related to. The wax sticking device comprises a control box on a machine table, and a mechanical arm and an air cylinder which are electrically connected with the control box, wherein the air cylinder is arranged above the machine table through a support column, the free end of a piston rod of the air cylinder is fixedly connected with a stamping head, and a ceramic disc is correspondingly arranged below the stamping head; the mechanical arm is connected with the adsorption device through a telescopic cylinder, a plurality of vacuum adsorption pads are arranged on the lower surface of the adsorption device, a vacuum adsorption pipeline connected with a vacuum pump is arranged on the adsorption device, and the vacuum pump is electrically connected with the control box; the ceramic plate is placed in the placing groove, the bottom of the placing groove is provided with a heating ring, and the ceramic plate is placed on the heating ring; the machine table is also provided with a wafer placing table. This wax sticking device adopts whole paster heating, changes traditional monolithic heating mode, improvement machining efficiency that like this can be great, and paster temperature uniformity is higher, has guaranteed the high quality processing of silicon carbide wafer.

Description

Silicon carbide wafer wax sticking device
Technical Field
The utility model belongs to the technical field of semiconductor wafer pastes wax polishing, a silicon carbide wafer pastes wax device is related to.
Background
At present in the upstream wax coating processing field of silicon carbide wafer, what traditional wax coating device adopted is that the monolithic distributes liquid wax, and the monolithic spins, and the monolithic pushes down the paster process, and efficiency is lower, and because the process of monolithic wax coating, the temperature difference change can take place for the temperature of ceramic dish because thermal drift, is difficult to guarantee the temperature uniformity when paster, and the silicon carbide wafer that pastes out has certain bubble bad proportion, and machining efficiency is lower.
Chinese patent CN201721427109.9 adopts traditional wax pasting and wax filling process, and the staff transports the wafer that gets rid of the wax to the baking unit, and then transfers to the ceramic dish, and the ceramic dish is rotatory to make the wafer that waits to mend the wax turn to the local heating region, after local preheating and baking, and rethread arm transport gasbag rotates to the wafer and needs the paster position to carry out local pushing down and accomplish the paster. The device can complete re-pasting of partial area of the ceramic disc, but the air bag is hemispherical, firstly, the lowest part of the air bag contacts the wafer firstly, so that the central stress is the largest, the wafer is easy to crack, and the air around the wafer is easy to form waxing bubbles.
Chinese patent CN201620163117.6 provides a wafer waxing device of a single-side grinding and polishing machine, when waxing, a ceramic plate is placed on a heater for heating, then hot-melt solid wax is dropped on the surface of the wafer, a wafer waxing mechanism places the wafer on liquid wax, a material pushing cylinder pushes the ceramic plate with the wafer into an air pressure press, the air pressure press flattens the wax layer on the wafer to make the thickness of the wax layer on the wafer uniform and flat, and cools and solidifies the wax layer on the wafer to improve the dimensional accuracy after polishing the wafer. However, the wafer waxing mechanism of the device places the wafers one by one on the periphery of the ceramic disk, which is complicated in operation and easily causes the breakage of the wafers. After the solid wax is melted on the ceramic plate, the wax liquid drops and is bonded on the side wall of the ceramic plate, so that the cleaning difficulty of the pushing cylinder is increased. The device has higher requirement on the operation precision of the material pushing cylinder, and the material pushing cylinder needs to accurately push the ceramic plate to a proper position between the pressing plate and the substrate, so that the parallelism of the wafer is guaranteed.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a carborundum wafer pastes wax device has solved current carborundum wafer paster inefficiency, and the complicated problem of equipment operation.
In order to achieve the purpose, the utility model is realized by adopting the following technical scheme:
the utility model provides a silicon carbide wafer wax sticking device, which comprises a control box arranged on a machine table, and an mechanical arm and a cylinder which are electrically connected with the control box, wherein the cylinder is arranged above the machine table through a support column, the free end of a piston rod of the cylinder is fixedly connected with a punching head, and a ceramic disc is correspondingly arranged below the punching head; the free end of the mechanical arm is connected with the adsorption device through a telescopic cylinder, a plurality of vacuum adsorption pads are arranged on the lower surface of the adsorption device and are uniformly distributed along the periphery of the adsorption device, a vacuum adsorption pipeline connected with a vacuum pump is arranged on the adsorption device, and the vacuum pump is electrically connected with the control box; the ceramic plate is placed in the placing groove, the bottom of the placing groove is provided with a heating ring, and the ceramic plate is placed on the heating ring; the machine table is also provided with a wafer placing table.
Furthermore, a plurality of wafer positioning grooves matched with the vacuum adsorption pads are arranged on the upper surface of the wafer placing table.
Furthermore, the upper part of the heating ring is in contact with the lower surface of the ceramic disc through a detachable heat conduction ring, and the outer diameter of the heat conduction ring is the same as that of the ceramic disc.
Furthermore, the heat conduction ring is made of metal aluminum and has a thickness of 1-2 mm.
The PLC controller is arranged in the control box and controls the mechanical arm, the air cylinder, the telescopic air cylinder, the vacuum pump and the heating ring to be common means in the prior art.
Adopt above-mentioned technical scheme, the beneficial effects of the utility model are that:
(1) the process of single-chip wax pasting is replaced, an integral wax pasting scheme is adopted, and the vacuum adsorption pad is utilized to simultaneously transfer all the wax wafers to be pasted, so that the efficiency is higher; utilize whole the toasting, heat comprehensively, set up the heating ring in the standing groove, make the ceramic dish be heated more evenly, take whole paster heating, change traditional monolithic heating method, improvement machining efficiency that like this can be great, and paster temperature uniformity is higher, has guaranteed the high quality processing of silicon carbide wafer, and the temperature uniformity helps improving the flatness control of silicon carbide wafer.
(2) The heat conduction ring stably and uniformly transfers the temperature of the heating ring to the ceramic disc so as to uniformly melt the solid wax on the ceramic disc, and the problem of insufficient wax melting caused by nonuniform heating of the ceramic disc is solved; and the heat conduction speed is slowed down, and the service life of the ceramic disc is prolonged.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention.
In the drawings:
FIG. 1 is a top view of a machine table of a silicon carbide wafer waxing device according to the present invention;
fig. 2 is a schematic view of the adsorption device and the placement groove of the present invention;
fig. 3 is a bottom view of the adsorption apparatus of the present invention;
FIG. 4 is a schematic view of the stamping head and the placement groove of the present invention;
the respective symbols in the figure are as follows: the device comprises an adsorption device 1, a vacuum adsorption pad 2, a placing groove 3, a ceramic disc 4, a heating ring 5, a heat conduction ring 6, a stamping head 7, an air cylinder 8, a wafer placing table 9, a mechanical arm 10, a machine table 11 and a wafer positioning groove 12.
Detailed Description
In the description of the present invention, it should be noted that the terms "vertical", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "communicating" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The present invention will be further explained with reference to the accompanying drawings.
As shown in FIGS. 1-4, the utility model provides a pair of silicon carbide wafer pastes wax device, including installing control box on board 11 and arm 10 and the cylinder 8 of being connected with the control box electricity, the cylinder passes through the support column and installs in the board top, and the piston rod free end rigid coupling punching head 7 of cylinder through reciprocating of the flexible control punching head of cylinder, and ceramic dish 4 corresponds the setting in punching head below.
The arm free end is connected with adsorption equipment 1 through telescopic cylinder, and the adsorption equipment lower surface is provided with a plurality of vacuum adsorption pad 2, and the vacuum adsorption pad is provided with the vacuum adsorption pipeline with vacuum pump connection along adsorption equipment periphery evenly distributed on the adsorption equipment, and the vacuum pump is connected with the control box electricity.
The ceramic dish is put in standing groove 3, and heating ring 5 is installed at standing groove bottom center, heats ceramic dish and makes the wax on it melt fast. The heating ring is contacted with the lower surface of the ceramic disc through a detachable heat conduction ring 6, and the outer diameter of the heat conduction ring is the same as that of the ceramic disc. The heat conduction ring is made of metal aluminum, has good heat conduction performance and thickness of 1-2 mm, and can reduce the rising and falling speed of the temperature of the ceramic plate, so that the ceramic plate is heated uniformly in the working process.
The machine table is also provided with a wafer placing table 9, and the upper surface of the wafer placing table is provided with a plurality of wafer positioning grooves 12 matched with the vacuum adsorption pads.
When in use: the worker places the silicon carbide wafer in the wafer positioning groove, heats the temperature of the heating ring to 100 ℃, and keeps the temperature constant; placing the heat-conducting ring on a heating ring at the center of the placing groove, placing the ceramic disc on the heat-conducting ring for heating, and forming an extremely thin liquid wax layer after the wax placed on the ceramic disc is melted; the controller controls the mechanical arm to rotate, controls the telescopic cylinder to move the adsorption device to the position above the wafer placing table, the vacuum pump adsorbs the wafer through the vacuum adsorption pad and keeps adsorbing for 3-5 seconds, the mechanical arm rotates to transfer the wafer onto the wax layer of the ceramic disc, the vacuum pump stops working, and the wafer is placed on the wax layer; and returning the mechanical arm to the initial position, driving the impact head to move downwards by the air cylinder to enable the lower surface of the impact head to be completely attached to the wafer, fully contacting the wafer with the wax layer, keeping for 2-4 seconds to complete integral surface mounting, and driving the impact head to move upwards by the air cylinder to return to the initial position.
It is to be understood that the present invention has been described in detail with reference to the foregoing embodiments, and that modifications and equivalents of the various embodiments described above may be made by those skilled in the art, or some of the technical features may be substituted. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (4)

1. The utility model provides a carborundum wafer pastes wax device, is including installing control box on board (11) and arm (10) and cylinder (8) be connected with the control box electricity, and install in board (11) top through the support column cylinder (8), and the piston rod free end of cylinder (8) connects punching head (7) admittedly, and ceramic dish (4) correspond the setting in punching head (7) below, its characterized in that:
the free end of the mechanical arm (10) is connected with the adsorption device (1) through a telescopic cylinder, a plurality of vacuum adsorption pads (2) are arranged on the lower surface of the adsorption device (1), the vacuum adsorption pads (2) are uniformly distributed along the periphery of the adsorption device (1), a vacuum adsorption pipeline connected with a vacuum pump is arranged on the adsorption device (1), and the vacuum pump is electrically connected with the control box;
the ceramic plate (4) is placed in the placing groove (3), the center of the bottom of the placing groove (3) is provided with a heating ring (5), and the ceramic plate (4) is placed on the heating ring (5); the machine table (11) is also provided with a wafer placing table (9).
2. The silicon carbide wafer wax sticking device according to claim 1, wherein a plurality of wafer positioning grooves (12) matched with the vacuum adsorption pad (2) are arranged on the upper surface of the wafer placing table (9).
3. The silicon carbide wafer wax sticking device according to claim 1, characterized in that the heating ring (5) is contacted with the lower surface of the ceramic disc (4) through a detachable heat conduction ring (6), and the outer diameter of the heat conduction ring (6) is the same as that of the ceramic disc (4).
4. The silicon carbide wafer wax sticking device according to claim 3, wherein the heat conducting ring (6) is made of metal aluminum and has a thickness of 1-2 mm.
CN201920718120.3U 2019-05-20 2019-05-20 Silicon carbide wafer wax sticking device Active CN210058835U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920718120.3U CN210058835U (en) 2019-05-20 2019-05-20 Silicon carbide wafer wax sticking device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920718120.3U CN210058835U (en) 2019-05-20 2019-05-20 Silicon carbide wafer wax sticking device

Publications (1)

Publication Number Publication Date
CN210058835U true CN210058835U (en) 2020-02-14

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114643651A (en) * 2022-03-21 2022-06-21 北京晶格领域半导体有限公司 Silicon carbide wafer wax pasting method and auxiliary wax pasting device
CN117810156A (en) * 2024-02-23 2024-04-02 中国电子科技集团公司第四十六研究所 Wafer bonding method and wafer bonding device
CN118553649A (en) * 2024-07-24 2024-08-27 常州臻晶半导体有限公司 Silicon carbide wafer chip mounter and chip mounting process thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114643651A (en) * 2022-03-21 2022-06-21 北京晶格领域半导体有限公司 Silicon carbide wafer wax pasting method and auxiliary wax pasting device
CN114643651B (en) * 2022-03-21 2024-05-14 北京晶格领域半导体有限公司 Silicon carbide wafer waxing method and auxiliary waxing device
CN117810156A (en) * 2024-02-23 2024-04-02 中国电子科技集团公司第四十六研究所 Wafer bonding method and wafer bonding device
CN118553649A (en) * 2024-07-24 2024-08-27 常州臻晶半导体有限公司 Silicon carbide wafer chip mounter and chip mounting process thereof

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Address after: 266114 No.383 Hedong Road, High tech Zone, Chengyang District, Qingdao, Shandong

Patentee after: Qingdao huaxinjingdian Technology Co.,Ltd.

Address before: 266114 No.383 Hedong Road, High tech Zone, Chengyang District, Qingdao, Shandong

Patentee before: Qingdao Xinjiaxing Electronic Technology Co.,Ltd.

Address after: 266114 No.383 Hedong Road, High tech Zone, Chengyang District, Qingdao, Shandong

Patentee after: Qingdao Xinjiaxing Electronic Technology Co.,Ltd.

Address before: 266114 No.383 Hedong Road, High tech Zone, Chengyang District, Qingdao, Shandong

Patentee before: QINGDAO XINJIAXING ELECTRONIC TECHNOLOGY Co.,Ltd.