JP2000299333A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable manufacturing of a semiconductor device in a short time without going through complicated steps, enabling coping with even about size modification or the like without problems. SOLUTION: A wafer 1 having a plurality of projected electrodes 2 formed thereon is prepared, and a sealing resin sheet 4 is mounted on the electrodes 2 of the wafer 1. Then the wafer 1 and sheet 4 are bonded together under heat, to form a resin layer as a laminate of the wafer 1 and sheet 4 provided thereon. Then the wafer 1 having the resin layer formed on its entire surface is cut into a prescribed size, to thereby manufacture a semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor device in a small package such as a chip size package (CSP).

[0002]

2. Description of the Related Art Conventionally, a method of manufacturing a semiconductor device by setting a semiconductor chip on a die pad of a lead frame and then encapsulating with a resin by transfer molding, or once mounting the semiconductor chip on a daughter board,
A method of manufacturing a semiconductor device which is a so-called flip-chip package by sealing the gap between the board and the chip with a resin is used as a general manufacturing method.

[0003]

However, in the above-described method for manufacturing a semiconductor device, a molding die or an infrared reflow (I
(R reflow) Requires a large investment in equipment such as equipment, and also requires the production and supply of lead frames and substrates in accordance with the design of the semiconductor chip, requiring complicated work every time the size is changed And had Also, many steps and time were required to manufacture one package.

The present invention has been made in view of such circumstances, and can respond to a change in size without any problem, and can manufacture a semiconductor device in a short time without going through complicated steps. Its purpose is to provide a method of manufacturing the device.

[0005]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention is directed to a method of manufacturing a semiconductor device, comprising: forming a sealing resin on a surface of a wafer on which a plurality of protruding electrode portions are formed; A step of mounting a sheet, a step of laminating a resin layer made of the sealing resin sheet on the wafer by bonding the wafer and the sealing resin sheet under heating, and a step of laminating and forming the resin layer. And a step of cutting the wafer to a predetermined size.

That is, according to the present invention, a wafer having a plurality of protruding electrode portions is prepared, and a sealing resin sheet is placed on the protruding electrode portion forming surface of the wafer. Then, under heating, the wafer and the sealing resin sheet are attached to each other, and a resin layer made of the sealing resin sheet is laminated on the wafer. Then, a semiconductor device is manufactured by cutting a wafer in which the resin layer is entirely formed by lamination into a predetermined size. As described above, first, a resin layer made of a sealing resin sheet is laminated and formed on the entire wafer, and then the wafer is cut into a predetermined size. It can be manufactured in a short time without going through.

When the sealing resin sheet has at least one selected from the group consisting of the properties (a) to (c), for example, the tensile elastic modulus is 0.5 to 500.
When the tensile elongation at 0 MPa is 5 to 300%, the above sheet can be handled as a wound film tape at normal temperature. Further, the tensile modulus is 0.5 to 500.
0 MPa or tensile elongation of 5 to 300% or 10
When the viscosity at 0 ° C. is 1 to 1000 Pa · s, when the sealing resin sheet is bonded to a wafer having a plurality of protruding electrode portions formed thereon, the electrode portions are bonded to the wafer surface without deformation. be able to.

[0008] When a release resin sheet is used in which a sealing resin sheet is laminated on one side, the sheet can be handled as a wound film tape. Further, even if the resin of the sealing resin sheet adheres and remains on the surface of the electrode portion after the sealing resin sheet is laminated on the wafer, the resin can be removed by peeling and removing the release sheet. Becomes

Further, when the above-mentioned epoxy resin composition (A) is used as a material for forming the encapsulating resin sheet, it has good adhesiveness and a maximum particle size of 100 μm or less, so that a stable electric power can be obtained. Conductive characteristics can be obtained. If the content of the inorganic filler is more than 90% by weight, the viscosity is high, and problems such as poor adhesion occur in bonding to the wafer.

In the case where the cured body of the resin layer made of the sealing resin sheet has at least one of the characteristics (d) and (e), for example, a stable conduction is obtained in the electric conduction characteristics after the temperature cycle test evaluation. Characteristics can be secured.

[0011]

Next, the present invention will be described in detail based on embodiments. As shown in FIG. 1, a semiconductor device obtained by the method of manufacturing a semiconductor device of the present invention has a resin layer 3 on one surface of a wafer 1 on which a plurality of protruding electrode portions 2 are formed.
Are laminated. Then, the desired semiconductor device is obtained by cutting the wafer 1 on which the resin layer 3 is formed by lamination into a predetermined size. In the present invention,
The wafer refers to a thin semiconductor whose surface is provided with an electrode layer other than the protruding electrode portions 2.

The material of the plurality of protruding electrode portions 2 is not particularly limited.
Silver, copper, aluminum, nickel, chromium, tin, lead, solder, and alloys thereof. Further, the shape of the protruding electrode portion 2 is not particularly limited, but it is preferable that the surface of the electrode portion has a convex shape.

The material of the wafer 1 is not particularly limited, and includes, for example, GaAs wafers, Si wafers and the like, which are conventionally used.

The sealing resin sheet used as a material for forming the resin layer 3 used in the method of manufacturing the semiconductor device is not particularly limited, and examples thereof include sheets made of various compounds.

As the material for forming the sealing resin sheet,
A thermosetting resin or a thermoplastic resin can be used, and an epoxy resin composition can be given as an example.

The epoxy resin composition comprises an epoxy resin (a component), a curing agent (b component), and an inorganic filler (c
And a solid at room temperature. In addition, the said normal temperature is 20 degreeC.

The epoxy resin (component (a)) is not particularly limited as long as it is a solid at room temperature, and is conventionally known, for example, a biphenyl type epoxy resin,
A cresol novolak type epoxy resin or the like is used, and it is preferable to use a low viscosity resin having good wettability at the time of melting. Particularly preferred is an epoxy resin having a structure represented by the following general formulas (1), (2), and (3) from the viewpoint of improving wettability. These may be used alone or in combination of two or more. For the purpose of lowering the viscosity and improving the wettability, the epoxy resin may be partially used in combination with an epoxy resin that is liquid at room temperature.

[0018]

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[0019]

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[0020]

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In the epoxy resin having the structure represented by the above formulas (1) to (3), the epoxy equivalent is preferably 150 to 230.
It is preferable to use those having a melting point of 60 to 160 ° C. in g / eq.

The curing agent (component (b)) used together with the epoxy resin (component (a)) is not particularly limited, and various curing agents generally used, for example, various phenol resins as phenolic curing agents and methyl An acid anhydride-based curing agent such as hexahydrophthalic anhydride is mentioned, and among them, a phenol resin is preferably used. As the phenol resin, phenol novolak or the like is used, and it is particularly preferable to use a resin having a low viscosity. Among them, it is preferable to use those having a hydroxyl equivalent of 80 to 120 g / eq and a softening point of 80C or lower. More preferably, the hydroxyl equivalent is 90 to 110 g / eq and the softening point is 5
0-70 ° C. Particularly preferred is a hydroxyl equivalent of 100 to
110 g / eq, softening point 55-65 ° C.

The epoxy resin (a component) and the curing agent (b)
When a phenol resin is used as a curing agent, the mixing ratio of the component) is preferably set such that the hydroxyl group equivalent in the phenol resin is in the range of 0.5 to 1.6 with respect to 1 equivalent of the epoxy group in the epoxy resin. . More preferably 0.8 to
1.2.

Examples of the inorganic filler (component c) used together with the above components a and b include various inorganic fillers conventionally used, for example, silica powder, calcium carbonate, titanium white and the like. Of these, spherical silica powder and crushed silica powder are preferably used, and it is particularly preferable to use spherical fused silica powder. And
The inorganic filler (component c) has a maximum particle size of 10
It is preferable to use one having a size of 0 μm or less. Particularly preferably, the maximum particle size is 50 μm or less. That is, when the maximum particle size exceeds 100 μm, it is difficult to obtain stable electric conduction characteristics. In addition, it is preferable to use those having an average particle size of 0.2 to 10 μm together with the maximum particle size.

The content ratio of the inorganic filler (component (c)) is preferably set within a range of 90% by weight or less based on the entire epoxy resin composition. It is more preferably from 20 to 90% by weight, particularly preferably from 55 to 75% by weight.
That is, when the content of the inorganic filler (component (c)) is less than 20% by weight, the characteristics of the resin layer, particularly the coefficient of linear expansion of the cured product, increase, and the difference between the semiconductor element and the coefficient increases. This may cause defects such as cracks in the resin layer and the semiconductor element. On the other hand, if the content exceeds 90% by weight, the resin itself has a very high viscosity, and there is a tendency for poor adhesion or the like due to insufficient wetting in bonding with the wafer.

In addition to the above components a to c, the epoxy resin composition used in the present invention may optionally have a low stress such as a silicone compound (such as a side chain ethylene glycol type dimethyl siloxane) or acrylonitrile-butadiene rubber. Agents, flame retardants, waxes such as polyethylene wax and carnauba wax, various silane coupling agents (γ
-Glycidoxypropyltrimethoxysilane and the like may be appropriately blended.

Examples of the flame retardant include a brominated epoxy resin, and a flame retardant aid such as diantimony trioxide is used.

Further, in addition to the above flame retardant, a polyhedral complex metal hydroxide represented by the following general formula (4) can be used. The composite metal hydroxide has a polyhedral crystal shape, and has a conventional hexagonal plate shape, or a so-called thin plate-like crystal shape such as a scale-like shape. not,
The crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. For example, a plate-shaped crystal has a large thickness direction (c-axis direction).
A composite metal hydroxide having a granular crystal shape that is more three-dimensionally and spherically formed by crystal growth, such as, for example, a substantially dodecahedral, a substantially octahedral, or a substantially tetrahedral shape.

[0029]

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Regarding the composite metal hydroxide represented by the general formula (4), M representing the metal element in the formula (4) is represented by Al, Mg, Ca, Ni, Co, Sn, Zn, C
u, Fe, Ti, B and the like.

The Q representing another metal element in the composite metal hydroxide represented by the general formula (4) is, for example, Fe, Co, Ni, Pd, Cu, Zn or the like. Selected alone or in combination of two or more.

Such a composite metal hydroxide having a polyhedral crystal shape can be obtained, for example, by controlling various conditions in the production process of the composite metal hydroxide.
Obtaining a composite metal hydroxide having a desired polyhedral shape, such as a substantially dodecahedral, a substantially octahedral, or a substantially tetrahedral shape, in which crystal growth in the thickness direction (c-axis direction) is large both vertically and horizontally. And usually consists of these mixtures.

Specific typical examples of the composite metal hydroxide having the polyhedral shape include hydrates of magnesium oxide / nickel oxide, hydrates of magnesium oxide / zinc oxide, and hydrates of magnesium oxide / copper oxide. Japanese products.

The composite metal hydroxide having the polyhedral shape has an aspect ratio of usually 1 to 8, preferably 1 to 8.
To 7, particularly preferably 1 to 4. The term “aspect ratio” as used herein refers to the ratio of the major axis to the minor axis of the composite metal hydroxide. That is, when the aspect ratio exceeds 8, the effect of lowering the viscosity when the epoxy resin composition containing the composite metal hydroxide is melted becomes poor.

The epoxy resin composition used in the present invention is obtained, for example, as follows. That is, the component a and the component b, which are the above resin components, are mixed and melted, and the component c and other additives as necessary are mixed and mixed with the resin component in the molten state. Thereafter, a catalyst for adjusting the reactivity is added to make a homogeneous system, which is then received on a pallet, cooled, and then, for example, rolled into a sheet by press rolling.

The catalyst blended for adjusting the reactivity is not particularly limited, and may be a catalyst conventionally used as a curing accelerator. For example, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-methylimidazole, 1,8-diazabicyclo (5,4,0) undecene-7 and the like can be mentioned.

The method of mixing the above components and preparing the sheet is not limited to the above method.
In the mixing, a biaxial roll, a triaxial roll, or the like may be used. As for the method of producing the sheet, a method of forming a sheet by roll rolling, or a method of applying a mixture of solvents to form a sheet is also possible.
In addition, in the supply form of the epoxy resin composition, by adopting a tape form, a so-called reel-to-reel mass production form can be applied.

As an example of the sealing resin sheet made of the epoxy resin composition, it is preferable to use a sheet-like epoxy resin composition having tackiness. The size of the sealing resin sheet is appropriately set according to the size (area) of the wafer to be placed. Further, the thickness and weight of the sealing resin sheet,
It is set appropriately according to the size of the protruding electrode portion formed on the wafer. For example, the thickness of the sealing resin sheet is usually 10 to 200 μm, preferably about 10 to 100 μm.

The sheet-like epoxy resin composition having the above tackiness can be obtained by, for example, adding a rubber component such as an acrylonitrile-butadiene copolymer to the epoxy resin composition. You. The acrylonitrile-butadiene copolymer is not limited to the case where the content of the acrylonitrile copolymer (NBR) is 100% by weight, but also includes the case where the NBR contains other copolymer components. Refers to a copolymer. Examples of the other copolymerization component include hydrogenated acrylonitrile-butadiene rubber, acrylic acid, acrylate, styrene, methacrylic acid, and the like. Among them, acrylic acid and methacrylic acid, which are excellent in adhesion to metals and plastics, are preferred. That is, an acrylonitrile-butadiene-methacrylic acid copolymer and an acrylonitrile-butadiene-acrylic acid copolymer are preferably used. The amount of acrylonitrile bonded in the above NBR is particularly preferably 10 to 50% by weight, and particularly preferably 15 to 40% by weight.

It is preferable that the sealing resin sheet has at least one selected from the group consisting of the following properties (a) to (c).

(A) The viscosity at a temperature of 100 ° C. is 1 to 100
0 Pa · s. (B) Tensile modulus at 20 ° C is 0.5 to 5000MP
a. (C) Tensile elongation at 20C of 5 to 300%.

The following are particularly preferred in the above characteristics (a) to (c). (A) The viscosity at a temperature of 100 ° C. is 5 to 500 Pa · s. (B) Tensile modulus at 20 ° C. is 50 to 3000 MPa. (C) Tensile elongation at 20 ° C. 20 to 200%.

The viscosity of the above characteristic (a) is measured as follows. That is, 2 g of the resin sheet for sealing was precisely weighed and formed into a tablet by tableting. Then, put this in the pot of the Koka type flow tester,
The measurement was performed with a load of 4.715 MPa (150 kgf / 100 mm ² ) (temperature: 100 ° C.). The melted epoxy resin composition is placed in a die hole (diameter 1.0 mm x 10 m).
The melt viscosity of the sample was determined from the moving speed of the piston when extruded through m).

The tensile modulus at 20 ° C. [characteristic (b)] and the tensile elongation at 20 ° C. [characteristic (c)] are measured as follows. That is, JIS K6
The measurement was performed using a universal tensile tester (Autograph, manufactured by Shimadzu Corporation) in accordance with the standard 900.

That is, when the sealing resin sheet has at least one selected from the group consisting of the above-mentioned properties (a) to (c), it can be handled as a film tape wound at room temperature. In addition, when the sheet is bonded to a wafer on which a plurality of protruding electrode portions are formed, the sheet can be bonded without deforming the electrode portions. In the above characteristics (a) to (c), a particularly preferred embodiment satisfies the characteristic (a), and a more preferred embodiment satisfies the characteristics (a) and (b). And the most preferable form is the characteristic (a), (b)
And (c).

Next, a method of manufacturing a semiconductor device according to the present invention will be described step by step with reference to the drawings.

That is, first, as shown in FIG. 2, a wafer 1 on which a plurality of protruding electrode portions (electrode bumps) 2 are formed.
Prepare Next, as shown in FIG.
The sealing resin sheet 4 is placed on the surface on which the protruding electrode portions (electrode bumps) 2 are formed, and then the wafer 1 and the sealing resin sheet 4 are pasted together by a heating roll 7.
A resin layer 3 made of a sealing resin sheet 4 is formed on the surface of the wafer 1 (see FIG. 1). Although FIG. 1 shows a state in which the top of the protruding electrode portion 2 of the wafer 1 is exposed, it is not necessarily limited to a state in which the top of the protruding electrode portion 2 is exposed. It is sufficient that the surface of the electrode 2 is exposed. Next, as shown in FIG. 4, the desired semiconductor device 5 can be manufactured by cutting the wafer 1 on which the resin layer 3 is formed by lamination into a predetermined size.

As the heating roll 7 used for bonding the wafer 1 and the sealing resin sheet 4, for example, a roll having elasticity such as a rubber roll is used.
Further, in consideration of the releasability from the sealing resin sheet 4,
It is preferable to use a roll having at least a roll surface formed of an elastic material having releasability such as silicone rubber. Alternatively, it is preferable to laminate the mold release sheet on the sealing resin sheet 4 side. Further, the roll may be provided with a cleaning blade in order to remove the residue and the like of the sealing resin sheet 4 attached to the surface.

In the method of manufacturing a semiconductor device, the heating temperature for heating the encapsulating resin sheet 4 may be a wettability (adhesion) to the wafer 1 during bonding.
And 40 to 16 in consideration of conditions such as voids
The temperature is preferably set in the range of 0 ° C., particularly preferably from 60 to 120 ° C. The heating method is not limited to the above-described heating roll 7, but may be a heating method using an infrared reflow oven, a dryer, a hot air heater, a hot plate, or the like.

When the wafer 1 and the encapsulating resin sheet 4 are bonded together, it is preferable to apply pressure together with the above-mentioned heating. shape, but are set as appropriate by the area of the wafer 1 or the like, specifically 19.62 × 10 ⁴ ~
It is set in the range of 294.3 × 10 ⁴ Pa ( ^{2 to} 30 kgf / cm ² ).

The sealing resin sheet 4 may be a sheet having a single layer or a sheet having a multilayer structure of two or more layers. Further, a material that becomes the sheet base material and contains the material for forming the resin layer 3 may be used. That is, it is sufficient that at least the resin portion capable of forming the resin layer 3 is included in the sheet structure. Further, as the sealing resin sheet 4, a sheet having a two-layer structure in which a release sheet is laminated on one side of a sealing resin sheet made of a synthetic resin is exemplified. When using the sealing resin sheet 4 on which the release sheet is laminated, as shown in FIG.
After bonding the wafer 1 and the sealing resin sheet 4 on which the release sheet 6 is laminated to form the resin layer 3, the release sheet 6
It is used to peel off only the sealing resin sheet 4. When the sealing resin sheet 4 on which the release sheet 6 is laminated is used, when the wafer 1 and the sealing resin sheet 4 are bonded to each other, the surface of the protruding electrode portion 2 other than the surface of the wafer 1 is also applied. Then, a part of the resin layer 3 made of the sealing resin sheet 4 (a part corresponding to the protruding electrode part 2) is laminated, and this is transferred onto the surface of the release sheet 6. Then, a part of the resin layer 3 is removed from the surface of the protruding electrode portion 2 with the release of the release sheet 6 while being transferred to the surface of the release sheet 6, so that the top of the protruding electrode portion 2 is more clearly defined. The effect of being exposed to is exhibited.

The release sheet 6 is not particularly limited, and various conventionally known sheets can be used. Examples thereof include polyethylene, polyethylene naphthalate, polypropylene, polyethylene terephthalate, polymethylpentene, and a fluororesin film. Can be

The resin layer 3 laminated on the surface of the wafer 1 of the semiconductor device obtained as described above is finally formed into a cured product by a curing reaction. During the curing reaction, for example, heat curing, after laminating and forming the resin layer 3 composed of the sealing resin sheet 4 on the surface of the wafer 1,
Before cutting into a predetermined size, the resin layer 3 may be heated and cured, or the resin layer 3 before cutting may be B-staged (semi-cured).
After cutting, the resin layer 3 may be cured by heating to form a C stage (completely cured).

As for the characteristics of the resin layer 3, it is preferable that the cured product of the resin layer 3 has at least one of the following characteristics (d) and (e). (D) Coefficient of linear expansion 10 to 100 ppm. (E) A tensile modulus of elasticity of 300 to 15000 MPa.

The above characteristics (d) to (e) are particularly preferably in the following ranges, respectively. (D) Coefficient of linear expansion 10 to 50 ppm. (E) Tensile modulus of elasticity 500 to 10000 MPa.

The linear expansion coefficient of the above characteristic (d), 40
The average coefficient of linear expansion between -80 ° C is measured as follows. That is, the above-mentioned temperature setting of 40 to 80 ° C. is in the region below the glass transition temperature (Tg) of the sealing material used for the semiconductor device, and the cured product to be measured (size: thickness 80 μm × width 4 mm) × 30 mm in length) are chucked at predetermined intervals (15 mm) at both ends, and a constant load [19.62 × 10 ⁻³ N (2
g)], and the change in length when the temperature was increased at a rate of 5 ° C./min was measured using a thermomechanical analyzer (TMA / SS110, manufactured by Seiko). And the above 40 ~
The average linear expansion coefficient at 80 ° C. is defined as [the chucking distance interval at 80 ° C. (mm) −the chucking distance interval at 40 ° C. (mm)] as [initial chucking distance interval (15 mm) × (80 ° C.-40) ° C)]].

The tensile modulus of the characteristic (e) is measured in the same manner as the tensile modulus of the characteristic (b).

That is, in the cured product of the resin layer 3, if the coefficient of linear expansion exceeds 100 ppm or if the tensile elasticity is out of the range of 300 to 15000 MPa, a defect that conduction failure occurs after the temperature cycle test tends to occur. Is seen. As described above, by providing the cured body of the resin layer 3 with at least one of the characteristics (d) and (e), stable conduction characteristics can be obtained even after the temperature cycle test evaluation, for example.

Furthermore, the method of cutting the wafer 1 on which the resin layer 3 is formed by lamination into a predetermined size is not particularly limited, and a conventionally known method such as a diamond scriber method or a laser scriber method And a blade dicing method.

Next, the present invention will be described in detail with reference to examples.

[Preparation of Wafer] An electrode layer was formed on one side, and 300 protruding electrode portions (solder electrode bumps: diameter 100 μm × height 80 μm) were formed per cm ^2.
Wafers formed at regular intervals of 00 μm pitch (diameter 10
0 mm).

[Preparation of Resin Sheet for Sealing] Into a predetermined methyl ethyl ketone solvent, the following components constituting the epoxy resin composition were charged, and an acrylonitrile-butadiene copolymer dissolved in methyl ethyl ketone was further added. The mixed solution was dissolved, and the mixed solution was applied onto a release-treated polyethylene terephthalate film (thickness: 75 μm). Then, the polyethylene terephthalate film coated with the mixed solution was dried at 120 ° C. to remove methyl ethyl ketone as a solvent, so that a thickness of 70 μm was formed on the polyethylene terephthalate film.
Was prepared. The obtained sealing resin sheet has a viscosity at a temperature of 100 ° C. of 526 Pa ·
s, the tensile modulus (20 ° C.) was 1212 MPa, and the tensile elongation (20 ° C.) was 182% (the measuring methods of the respective properties are described above).

[Epoxy Resin Composition Constituents and Compounding Amount] Epoxy resin represented by the above general formula (1) 15 parts by weight Phenol novolak resin (hydroxyl equivalent 105) 8.3 parts by weight Acrylonitrile-butadiene copolymer ( Acrylonitrile-butadiene-methacrylic acid copolymer: acrylonitrile binding amount 27% by weight) 5.9 parts by weight Fused silica (maximum particle size 24 μm) 45 parts by weight Triphenylphosphine 0.5 part by weight

[0064]

Embodiment 1 As shown in FIG. 3, the sealing resin sheet 4 is placed on the surface of the wafer 1 on which the projecting electrode portions 2 are formed, on which the projecting electrode portions 2 are formed. 7, the wafer 1 and the sealing resin sheet 4 were bonded together [temperature 90 ° C. × 98.1 × 10 ⁴ Pa (10 kgf / 100
mm ² ) Pressurized]. By this roll laminating method, a resin layer 3 composed of a sealing resin sheet 4 was laminated on the wafer 1 (see FIG. 1). Next, the resin layer 3 was cured under the curing conditions of 150 ° C. × 30 minutes. At this time, the cured product (resin layer 3) had a linear expansion coefficient of 40 ppm and a tensile modulus of 5070 MPa (the measuring methods of the respective characteristics are described above). After curing, the remaining separator, that is, a polyethylene terephthalate film (not shown), which had been subjected to a release treatment, was peeled off, whereby the resin adhering to the electrode portion 2 was also removed, and the electrode portion 2 was exposed. A wafer having the resin layer 3 formed thereon was manufactured. Next, as shown in FIG. 4, the wafer 1 on which the cured resin layer 3 is laminated is formed into a predetermined size (10 mm × 1) by dicing.
0 mm) to manufacture a plurality of semiconductor devices 5.

[0065]

Example 2 The forming material of the sealing resin sheet was changed to the following components of the epoxy resin composition. Otherwise, a plurality of semiconductor devices 5 were manufactured in the same manner as in Example 1.
In addition, the obtained resin sheet for sealing has a viscosity at a temperature of 100 ° C. of 416 Pa · s and a tensile modulus (20 ° C.) of 909.
The MPa and the tensile elongation (20 ° C.) were 210% (the measuring methods of each property are described above). The cured product of the resin layer made of the sealing resin sheet made of the epoxy resin composition has a linear expansion coefficient of 42 ppm and a tensile modulus of 4680 MP.
a (the measuring method of each property is described above).

[Components of Epoxy Resin Composition and Compounding Amount] Epoxy resin represented by general formula (3) 15 parts by weight Phenol novolak resin (hydroxyl equivalent 105) 8.3 parts by weight Acrylonitrile-butadiene copolymer ( Acrylonitrile-butadiene-methacrylic acid copolymer: acrylonitrile binding amount 27% by weight) 5.9 parts by weight Fused silica (maximum particle size 24 μm) 45 parts by weight Triphenylphosphine 0.5 part by weight

The semiconductor device manufactured as described above is subjected to an initial stage of manufacturing and a thermal shock test (TS
The continuity test after T) was performed according to the following methods. As a result, conductive failures (out of 3,000) were counted (300 failures per package x 10 packages = continuity failure was confirmed in 3000). The results are shown in Table 1 below.

[Continuity Test] Method of Measuring Continuity Test A packaged CSP was set in a predetermined socket, and a conduction failure was checked.

Thermal Shock Test (TST) Conditions Using the packaged CSP, -55 ° C. /
After subjecting the test to 500 cycles of 5 minutes to 125 ° C./5 minutes, a continuity test was performed in the same manner as described above.

[0070]

[Table 1]

From the results shown in Table 1, it can be seen that in Examples 1 and 2, no continuity failure was confirmed in both the continuity test at the initial stage and the continuity test after TST, and a good package was obtained.

In the sealing resin sheet used in Example 1, a single-layer sheet (a sheet made of an epoxy resin composition) on which a release sheet (a release-treated polyethylene terephthalate film) was not laminated was used. Otherwise, a semiconductor device was manufactured in the same manner as in Example 1. With respect to this semiconductor device, a continuity test at the initial stage and a continuity test after TST were performed in the same manner as described above, but no continuity defect was confirmed in both continuity tests, and a good package was obtained.

[0073]

As described above, according to the present invention, a wafer on which a plurality of protruding electrode portions are formed is prepared, and a sealing resin sheet is mounted on the protruding electrode portion forming surface of the wafer. Then, under heating, the wafer and the sealing resin sheet are attached to each other, and a resin layer made of the sealing resin sheet is laminated on the wafer so that at least the tops of the protruding electrode portions are exposed. . Then, the semiconductor device is manufactured by cutting the wafer on which the resin layer is entirely formed by lamination into a predetermined size. Thus, first,
After laminating a resin layer composed of a sealing resin sheet over the entire wafer, the wafer is cut into a predetermined size, so that it is shorter than the conventional manufacturing method of manufacturing individual chips without a complicated process. Can be manufactured in time.

When the sealing resin sheet has at least one selected from the group consisting of the properties (a) to (c), for example, the tensile elastic modulus is 0.5 to 500.
When the tensile elongation at 0 MPa is 5 to 300%, the above sheet can be handled as a wound film tape at normal temperature. Further, the tensile modulus is 0.5 to 500.
0 MPa or tensile elongation of 5 to 300% or 10
When the viscosity at 0 ° C. is 1 to 1000 Pa · s, when the sealing resin sheet is bonded to a wafer having a plurality of protruding electrode portions formed thereon, the electrode portions are bonded to the wafer surface without deformation. be able to.

Further, by using the release sheet in which a sealing resin sheet is laminated on one side, it is possible to handle the above-mentioned sheet as a wound film tape. Further, even if the resin of the sheet remains on the surface of the electrode portion after the sealing resin sheet is laminated on the wafer, the resin can be removed when the release sheet is peeled and removed.

Further, by using the above-mentioned epoxy resin composition (A) as a material for forming the sealing resin sheet, the wettability (adhesion) to the wafer due to the low viscosity of the resin is improved, and It becomes possible to contain a larger amount of the inorganic filler for lowering the coefficient of linear expansion.

When the cured body of the resin layer made of the above-mentioned sealing resin sheet has at least one of the characteristics (d) and (e), for example, a stable conduction in the electric conduction characteristics after the temperature cycle test evaluation is obtained. It is possible to have characteristics.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an example of a semiconductor device (before cutting) obtained by a method for manufacturing a semiconductor device of the present invention.

FIG. 2 is a schematic view illustrating a manufacturing process of the semiconductor device of the present invention.

FIG. 3 is a schematic view illustrating a manufacturing process of the semiconductor device of the present invention.

FIG. 4 is a schematic view illustrating a manufacturing process of the semiconductor device of the present invention.

FIG. 5 is a schematic diagram showing an example of a semiconductor device (before cutting) obtained by using a release sheet laminated on one side of a sealing resin sheet.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Protruding electrode part 3 Resin layer 4 Resin sheet for sealing 5 Semiconductor device 6 Release sheet

Claims (6)

[Claims] 1. A step of mounting a sealing resin sheet on a projection electrode portion forming surface of a wafer having a plurality of projection electrode portions formed thereon, and heating the wafer and the sealing resin sheet under heating. A semiconductor comprising: a step of laminating and forming a resin layer composed of the sealing resin sheet on a wafer by laminating; and a step of cutting the wafer on which the resin layer is laminated to a predetermined size. Equipment manufacturing method. 2. In the step of laminating and forming a resin layer made of the sealing resin sheet on the wafer by bonding the wafer and the sealing resin sheet, at least the top of the protruding electrode portion is exposed. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a resin layer made of the resin sheet for sealing is laminated on the wafer. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin sheet has at least one selected from the group consisting of the following properties (a) to (c). (A) The viscosity at a temperature of 100 ° C. is 1 to 1000 Pa · s. (B) Tensile modulus at 20 ° C is 0.5 to 5000MP
a. (C) Tensile elongation at 20C of 5 to 300%. 4. The method of manufacturing a semiconductor device according to claim 1, wherein a release sheet is laminated on one surface of the sealing resin sheet. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin sheet is made of the following epoxy resin composition (A). (A) It contains the following components (a) to (c),
The content ratio of the component is 90% of the entire epoxy resin composition (A).
An epoxy resin composition set to not more than% by weight. (A) Epoxy resin. (B) a curing agent. (C) An inorganic filler having a maximum particle size of 100 μm or less. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the cured body of the resin layer has at least one of the following characteristics (d) and (e). (D) Coefficient of linear expansion 10 to 100 ppm. (E) A tensile modulus of elasticity of 300 to 15000 MPa.