CN102171783A - 驱动质谱仪离子阱或滤质器 - Google Patents
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Abstract
用于驱动质谱仪的离子阱或滤质器的射频(RF)驱动系统及方法,具有耦接到RF增益级的可编程RF频率源。RF增益级是变压器,其耦接到由离子阱或滤质器形成的储能电路。使用感测电路和电源电路测量驱动离子阱或滤质器的RF增益级的功率。通过用于调整RF频率源的电源电路生成反馈值。RF频率源的频率被调整直到RF增益级的功率处于最低水平。
Description
相关申请的交叉引用
本申请要求2008年5月27日提交的、序号为61/056,362的美国临时申请的优先权,通过引用的方式将其结合于此。本申请是2008年12月8日提交的、序号为的美国专利申请的部分继续。
技术领域
本发明涉及离子阱(ion trap)、离子阱质谱仪(ion trap massspectrometers),并且更加具体来说,涉及用于驱动诸如线型四极(linearquadrupole)的质谱仪离子阱或滤质器(mass filter)的射频系统。
发明内容
用于驱动质谱仪离子阱的射频(RF)系统具有产生RF信号的频率可编程RF发生器。RF增益级接收RF信号并生成经放大的RF信号。感测电路生成与传递给RF增益级的供电电流成比例的感测信号。变压器具有耦接到RF增益级的输出的初级绕组(primary)和被耦接以与质谱仪离子阱的电容一起形成储能电路(tank circuit)的次级绕组(secondary)。电源电路(powercircuitry)使用感测信号以确定RF增益级的功耗,以便调整RF发生器的频率,以使得提供给RF增益级的功率(power)被降低。
一旦设置了RF发生器的频率,当可变条件使得变压器次级绕组和离子阱的谐振频率漂移(drift)时,可以利用功率监视来连续地调整频率,该频率作为。因为需要低得多的功率来驱动质谱仪离子阱或滤质器(诸如线型四极),所以质谱仪可以在大小和成本上降低,由此增加潜在应用的数目。
在附图以及下面的说明中阐述了本发明的一个或多个实施例的细节。本发明的其他特征、目标和优点将从描述和附图以及从权利要求中变得清楚。
附图说明
图1示出质谱仪系统的系统方框图;
图2示出用于质谱仪系统的RF捕获和喷射电路(trapping and ejectingcircuitry);
图3示出离子阱;
图4示出用于改变离子阱的性能的电路;
图5A示出用于生成反馈信号以控制RF信号源的电路;
图5B示出配置频率控制的RF信号源的电路;
图6示出用于图2的RF系统的频率跟踪的流程图;
图7示出用于确定图2的RF系统的谐振频率的流程图;
图8示出根据本发明的实施例的流程图;和
图9示出提供给离子阱的频率对功率的示范曲线图(plot)。
具体实施方式
在本发明的实施例中,离子阱执行质谱化学分析。离子阱使用由一个驱动信号或多个驱动信号生成的动态电场从测量样本中动态地捕获离子。通过改变捕获离子的射频(RF)电场的特征(例如,振幅、频率等等),相应于离子的质量-电荷比(质量(m)/电荷(z))选择性地喷射出它们。
在本发明的实施例中,离子阱动态地捕获离子阱内的四极场(quadrupolefield)中的离子。这个场是通过相对于端盖电压(end cap voltage)(或信号)的、从RF源施加到中心电极的电信号创建的(created)。在最简单的形式中,具有恒定RF频率的信号被施加到中心电极,而两个端盖电极被维持在静态零伏特。中心电极信号的振幅线性地倾斜向上,以便选择性地使离子阱内保留的不同质量的离子不稳定(destabilize)。这种振幅喷射(amplitude ejection)结构可能不会得到最佳性能或解决方案,并且在实际中可能导致输出能谱中的双峰。这种振幅喷射方法可以通过在端盖之间区别地施加第二信号得以改进。该第二信号导致偶极轴向激发(dipole axial excitation),其导致当阱内离子的振荡的长期频率与端盖激发频率匹配时,离子从离子阱中谐振喷射。
离子阱或滤质器具有看起来像几乎是纯电容的等效电路。驱动离子阱所需的电压的振幅可以很高(例如,1500伏特),并且通常要求使用耦合以产生高电压的变压器。变压器次级绕组的电感和离子阱的电容形成并联储能电路(parallel tank circuit)。在谐振之外的频率驱动该电路可能产生不必要的损失,并且可能增加电路的成本和大小。特别是,这将妨碍使质谱仪小型化以提高其使用和市场性的努力。
此外,在谐振处驱动电路具有其它好处:诸如产生可能的最清洁、最低失真以及最低噪声的信号。储能电路(tank circuit)使除了谐振频率之外的所有频率的信号衰减;以这种方法,储能电路作为它自己的窄带通滤波器,其中仅仅使特定频率谐振。频偏噪声(off frequency noise)和谐频(harmonics)被滤出。而且,在谐振处,来自信号驱动放大器的功率量非常低。需要的功率仅仅是在变压器无效率(inefficiency)中损失的功率或电阻的损失的功率。电路功率在较小物理面积的储能电路中、在电感元件和电容元件之间来回传递。因为几乎没有功率是从外部放大器驱动的,所以作为电磁干扰(EMI)被放射出(radiated)功率会更少。
因此,对于RF系统来说,保证离子阱是通过最小化组件大小、降低成本和功率、提供超高质量的信号并且导致减少的放射EMI的电路来驱动可能是有利的。这在便携式质谱仪应用中会是非常重要的。
图1示出在质谱仪系统100中的元件的框图。样本101可以通过渗透膜管道102被引入具有低压105(例如真空)的腔112。结果,浓缩的样本气体103被容许通过薄膜管道102并且使其前进到离子阱104。电子113以公知方式由源111生成,并且由加速电势110导向离子阱104。电子113在离子阱104中将样本气体103离子化。RF捕获和喷射电路109被耦接到离子阱104,以便在离子阱104内建立交流电场,以便首先捕获、然后以与离子质量成比例的方式喷射离子。附加的修改电路108可以用于增强离子阱104的操作。离子探测器106寄存以相应于特定离子质量的不同时间间隔发射的离子的数目。这些离子数目被数字化以供分析并在显示器107上显示为光谱。
渗透膜102可以包括嵌入式加热装置(未示出),用以保证气体样本处于均匀温度。另外,提供电子113的装置111可以包括静电透镜,其可操作用于聚焦进入离子阱104的电子113。静电透镜的焦点可以在端盖的孔(aperture)的前面(例如,参见图3)。静电透镜操作用于提供离子阱104中更好的电子分布而且用于提高进入阱104的电子的百分比。电子113的源111可以被配置为以碳纳米管作为使电子能够以比传统方法更低的功率生成的电子发射器。还应当注意,本领域技术人员将认识到,存在包括离子阱(ion trap)的质谱仪100的许多配置,所述配置可以具有改变的(1)将样本101引入到质谱仪100的方法,(2)离子化方法111,以及(3)探测器106,它们均在本发明的实施例的范围之内。
在本发明的实施例中,离子阱104被配置为具有这样的设计:其生成对电路109的最低电容负载。离子阱104可以将其内表面粗糙度最小化以改善其特性。
图2示出驱动离子阱104的RF捕获和喷射电路109的电路和框图。示范性离子阱104包括中心电极219以及端盖218和220。离子阱104可以像在这里描述的那样,或者任何其他可以以像在这里描述的方式操作的等效离子阱设计。寄生电容213和214以虚线示出。端盖218和220可以耦接到地电势并且电容213和214代表对电路109的电容负载。
RF源201生成正弦曲线的RF信号并且被示为具有耦接到(多条)控制线221的输入。控制线221的值可操作为向上或者向下调整RF信号的频率。在实施例中,可以响应于最优化参数,人工地调整RF源201的频率。差动放大器204(例如,运算放大器)具有正输入和负输入以及输出。使用电阻器205和206的负反馈可以用于将放大级的闭环增益设置为电阻器值之比。RF信号用滤波器203进行滤波(例如,低通或带通)并且被施加到放大器204的正输入。放大器204使用电容器209以阻挡放大器输出偏移电压,并且使用电阻器210来改善放大器稳定性。经滤波的放大器204的输出被施加到变压器211的输入。因为可能需要高电压(例如,1500伏特)来驱动离子阱104,所以变压器211可以是升压(step up)变压器。这允许放大级的初级侧组件具有相对较低的电压。
放大器204可以由双极电源(bipolar power supply,PS)电压216和217供电。电流感测电路208可以用于监视来自PS电压216的电流。功率控制电路207可以配置为监视驱动离子阱104所耗散的功率,以便经由控制线221控制RF源201。根据RF源201的特性,控制电路207可以是模拟的或者数字的。在任一情况下,电路109操作为在将由PS电压216和217提供的功率最小化的频率处驱动离子阱104。
可以调整RF源201的频率以最小化驱动离子阱104所需的功率。最小化驱动功率的RF源201的最终频率是使包括变压器211的次级绕组处的电感以及离子阱104的电容的电路谐振的频率。RF源201的频率可以设置在期望值处,并且可变组件(例如,可变电容器212)用于改变次级绕组电路(secondarycircuitry)以使其与所设置的RF源201的期望频率谐振。可以设置RF源201的中心频率,并且次级绕组电路额被调整以调谐(tune)变压器211的次级绕组。然后具有控制221的反馈可以用于调整谐振频率,以动态地最小化驱动离子阱104所需的功率。
电路207可以采用这样的可编程处理器:其首先设置RF源201的频率以最小化到离子阱104的功率。然后,在离子被捕获的时间段之后,来自变压器211的次级绕组的振幅反馈可以用于调整RF源201的振幅或放大级的增益,从而使得驱动离子阱104的次级信号的振幅为以操作来喷射离子的方式而调幅的振幅。
电路207可以采用这样的可编程处理器:其首先设置RF源201的频率以最小化到离子阱104的功率。然后,在离子被捕获的时间段之后,RF源201的频率的被改变,使得驱动离子阱104的次级信号的频率为以操作来喷射离子的方式而调频的频率。
在一个实施例中,电路109可以采用电容分压器用于将变压器211的输出电压的样本反馈到放大器204的负输入。该负反馈可以用于在驱动离子阱104时稳定电压输出变压器211。
图3示出根据本发明的实施例的离子阱104的电极的横截面和细节。第一端盖218具有入口孔(inlet aperture)304,中心电极219具有孔306并且第二端盖220具有出口孔305。端盖218和219以及电极219可以具有环形配置或者根据本发明的实施例足以捕获和喷射离子的其他等效形状。典型地,第一离子阱端盖218可以耦接到地或零伏特,然而,其他实施例可以使用零伏特之外的电压。例如,第一端盖218可以连接到可变DC电压或者其他信号。离子阱中心电极219由电路109驱动(参见图1和2)。第二离子阱端盖220可以直接连接到零伏特或通过电路元件108连接到零伏特(参见图1),或者连接到另外的信号源。薄型绝缘体(Thin insulators)(未示出)可以位于间隔(spaces)309中以隔离第一端盖218、第二端盖220和中心电极219,从而形成电容213和214(以虚线示出)。在美国专利No.3,065,640中描述了典型离子阱的操作和配置,并且典型离子阱的操作和配置后来为本领域的许多作者所涉及,包括March(March,R.E.和Todd,J.F.J,“Practical Aspects ofIon Trap Mass Spectrometry”,1995,CRC Press)提供的说明,以上二者均通过引用的方式结合于此。
图4示出由电路109(参见图1和图2)有源驱动的离子阱104的示意框图400。端盖218具有用于收集样本气体的入口孔304,中心电极219具有用于保留所生成的离子的孔306,并且第二端盖220具有出口孔305。端盖218可以耦接到地或零伏特,然而,其他实施例可以使用除了零伏特或者另外的信号源之外的配置。中心电极219由电路109驱动。端盖220可以通过修改电路108(在本实施例中,包括电容器402和电阻器403的并联组合)连接到零伏特。薄型绝缘体(未示出)可以位于间隔309中以隔离第一端盖218、第二端盖220和中心电极219。
图4中示出的实施例400具有自然存在于中心电极219和端盖220之间的本征电容214(以虚线标出)。电容214与电容器402的电容串联,从而形成电容分压器,由此在端盖220处施加(impress)从来自电路109的信号得出的电势。当电路109在中心电极219上施加变化的电压时,具有较小振幅的、变化的电压通过电容分压器的动作被施加在端盖220上。自然地,在中心电极219和端盖218之间存在相应的本征电容213(以虚线标出)。分立的电阻器403可以添加在端盖220和零伏特之间。电阻器403提供电通路(path),其用于防止端盖220发展出能够引起电压漂移或者过充电堆积(excess chargebuild-up)的浮动DC电势。电阻器403的值在1到10兆欧姆(MΩ)的范围内调整大小,以保证在电路109的工作频率处电阻器403的阻抗比添加的电容器402的阻抗大得多。如果电阻器403的电阻值没有比CA 402的阻抗大得多,那么在中心电极219处的信号与通过电容分压器施加在第二端盖220上的信号之间将存在相移。而且,如果电阻器403的值太低,那么施加在端盖220上的信号的振幅将根据感兴趣的频率范围中频率的函数而变化。没有电阻器403,电容分压器(CS214和CA402)基本上与频率无关。添加的电容器402的值可以是可变的,因此针对给定系统特性,其可以被调整以具有最优化的值。
图5A示出用于在控制线221(参见图2)上产生适合于控制可编程RF信号源201的反馈信号的示范性电路。请注意,控制线221上的信号可以是模拟电压或多个模拟电压,或者是由一条或多条线形成的数字通信方法。放大器204由电源电压216和217供电。在本实施例中,电流感测电阻器501与电压216串联耦接,并且其电压降耦接到差动放大器502。通过在放大器的双极电源(bipolar supplies)中的仅仅一个上监视流向(draw to)放大器204的电流,能够监视功率而无需高速整流或者类似的手段,如果取而代之是监视放大器204的输出电流,则需要这样的高速整流或者类似的手段。差分放大器502生成与电源电流成比例的输出电压到离子阱104,该电源电流为电路109供电。模数(A/D)转换器503将该电压转换为数字值。数字控制器504接收数字值并且响应于用于电路109的总功率在控制线221上输出数字控制信号到离子阱104。数字控制器504可以是从输入505接收编程的存储的程序控制器。然后,可以存储程序步骤,其响应于接收到的相应于电路109的功率的数字值,指导(direct)针对数字控制信号而输出的值。以这样的方式,程序可以被写入并存储,其指导用于离子阱104的电路109怎样被初始化以及自动地调整以便以最低可能功率电平(power level)驱动离子阱104。
图5B示出用于配置可编程RF源201(参见图2)的示范性电路的框图。使用相位/频率电路510将参考频率514与可编程分频器513的输出相比较。通过可编程因子N,分频器513对从源201产生输出515的压控振荡器(VCO)512的输出进行分频。在该结构中,RF源频率将是参考频率514的N倍。因为数字N是可编程的,所以在控制线221上的数字值可以用于控制输出515的频率。存在可以用于电路109的实施例中的、能够用于针对RF源201示出的示范性电路的许多变形。也可以在单个集成电路中获得RF源201的功能。
图6示出在功率控制电路207中执行以及用于图2的电路109的可选的频率跟踪步骤804的步骤的流程图。在步骤601中,从功率控制电路207输出值,以便根据图7中的步骤将RF源201设置到确定的谐振频率Fn。在步骤602中,加号用来指示振荡器201频率的增大,减号用来指示振荡器201频率的降低。初始的符号值是任意选择的或者基于谐振频率漂移的预期方向。在步骤603中,振荡器201的频率在当前符号所指示的方向增加预定量,同时功率控制电路207监视到离子阱104的功率Ps。在步骤604中,进行测试以确定功率Ps是否是增加的。如果测试的结果是“是”,则表示频率变化方向的符号切换到交替的(alternate)符号。然后,由分支返回到步骤603。如果在步骤604中测试的结果是“否”,则当前符号保持现状并且由分支返回到步骤603。以这样的方式,振荡器201的频率来回振动(dither back and forth),以便将到离子阱104的功率保持在最小值。
图7示出在搜索谐振工作频率时在功率控制电路207中执行以及在步骤802中使用的步骤的流程图。在步骤701中,RF源201被设置为可编程频率范围内的低可编程频率。频率范围基于离子阱或者滤质器的成功的工作频率范围确定,并且被最小化以减少搜索时间。该信号的振幅保持恒定并且被设置得足够低以免引起在显著远离谐振频率的频率处的过度的功率抽取(powerdraw)或者发热。在步骤702中,粗略(coarse)值被输出以便以增量渐增地扫描振荡器的频率。该值被赋予可变指示符Fi。在步骤703中,监视到电路109的电流以确定驱动离子阱104的功率Ps。在步骤704中,执行测试以便确定到离子阱104的功率是否被提高了大于预定量。如果在步骤704中测试的结果是“否”,则由分支返回到步骤702。如果在步骤704中测试的结果是“是”,则由分支到步骤705,其中当前Fi被保存,并且频率在频率范围Fi到Fi-2内以精细(fine)增量降低。在步骤705中,调整振荡器的频率的精细值被输出,以便在范围Fi(最后的粗略频率步骤)到Fi-2内降低振荡器的频率,该范围包含了(encompass)最后三个输出的粗略频率步骤。在步骤706中,谐振频率Fn被选为与在频率范围Fi到Fi-2内扫描时发现的最小功率相应的谐振频率。然后由分支返回步骤803(参见图8)。
放大器204具有提供功率到放大器204的两个电源输入,一个用于正电压216,一个用于负电压217。小电阻器(分流电阻器(current shunt resistor))可以沿着(in line with)正电源管脚216(见图2中的电路208)放置。流入该电源输入的任何电流都将流经该电阻器。因为以欧姆为单位的该电阻器的电阻是已知的,所以通过测量该电阻器两端的电压降可以知道流经该电阻器的电流(V=I*R)。当该电阻器两端的电压降最低时,流经电源管脚的电流也处于最低,因此放大器204使用的功率处于最低。在电路的谐振频率处,输入到放大器204的电流显著下降。系统在操作之前扫过(sweep through)系统的整个频率范围,以便找出该谐振频率(通过随着频率被扫描来监视分流电阻器两端的电压)。分流电阻器两端的电压可以通过分流放大器组件放大并且馈送到模数转换器。模数转换器的数字输出可以馈送到微处理元件,诸如在功率控制电路207之内。系统监视流入双极电源中的一个的电流,而非直接测量输出电压。这提供了真正谐振频率的更准确的值,并且消除了整流信号、使用峰值检波器的需要,或者执行RMS变换以确定振幅的需要。
图8示出在操作图2的电路109时在功率控制电路207中执行的一般步骤的流程图。在步骤801中,质谱仪100通过重启(reset)被通电。在步骤802中,开始搜索模式,其中RF源201的频率被调整以确定具有用于驱动示范性离子阱104的最小功率的谐振频率(例如,见图7)。在步骤803中,质谱仪系统100用所确定的谐振频率操作。在步骤804中,在系统操作期间开始可选的频率跟踪,以便响应于离子阱的谐振点以及关联电路中的变化,将工作频率保持在用于驱动离子阱104的最小功率(例如,见图6)。
图9示出根据本发明的实施例的用于驱动离子阱104的频率对功率的示范曲线图。与谐振频率Fn一起示出起始扫描频率Fi。Fn与放大器204的最小功耗点一致。当频率持续升高到超过Fn后、连续的功率下降是由于放大器204的带宽限制造成的。
这里所描述的实施例操作为降低质谱仪的功率和大小,以使得质谱仪系统可以变为其他系统中的组件,这些系统先前因为传统单元的成本和大小而无法使用这样的单元。例如,小质谱仪(mini-mass spectrometer)100可以放置在危险地点用于分析气体,并远程地向人员发回呈现危险的状况报告。使用这里的实施例的小质谱仪100可以放置在航空运输中的战略位置处,用于测试环境中的危险气体,这可能表示故障或者甚至是恐怖威胁。本发明已经预期了缩减实现功能性质谱仪的大小以及所需的功率的价值,以使得其操作可以用于通常不会考虑使用此种设备的地方和应用中。
已经描述了本发明许多实施例。然而,应当理解,可以进行各种修改而不脱离本发明的精神和范围。
Claims (13)
1.一种用于驱动质谱仪离子阱或滤质器的系统,包括:
频率和振幅可编程RF发生器,其生成RF信号;
RF增益级,其接收RF信号并生成经放大的RF信号;
感测电路,其生成与传递给RF增益级的电源电流成比例的感测信号;
变压器,其具有耦接到RF增益级的输出的初级绕组以及被耦接以与所述质谱仪离子阱或滤质器的电容一起形成储能电路的次级绕组;以及
电源电路,其接收所述感测信号以及生成反馈控制信号到所述RF发生器,该反馈控制信号调整所述RF发生器的频率以降低提供给所述RF增益级的所述RF信号的功率电平。
2.如权利要求1所述的系统,其中,所述感测电路包括:
电流感测电阻器,其与输入所述RF增益级的电源串联;以及
差分放大器,其具有耦接到所述电阻器的一端的正输入以及耦接到所述电阻器的第二端的负输入,其中,所述差分放大器生成与提供给所述RF增益级的功率成比例的输出信号。
3.如权利要求2所述的系统,其中,所述可编程RF发生器包括具有可编程分频器电路的锁相环PLL电路。
4.如权利要求3所述的系统,其中,所述可编程分频器电路是数字可编程的。
5.如权利要求4所述的系统,还包括模数A/D转换器,用于将所述差分放大器的输出电压转换为数字反馈信号。
6.如权利要求1所述的系统,其中,所述变压器是具有次级绕组电感的升压变压器,该次级绕组电感与所述质谱仪离子阱或滤质器的电容一起形成谐振电路。
7.如权利要求1所述的系统,其中,所述RF发生器耦接到具有滤波电路的RF增益级。
8.如权利要求7所述的系统,其中,所述RF发生器耦接到所述变压器的初级绕组。
9.如权利要求1所述的系统,其中,所述RF增益级的增益通过电阻器之比进行设置。
10.如权利要求8所述的系统,其中,所述滤波电路包括串联电阻器。
11.如权利要求1所述的系统,还包括与所述质谱仪离子阱或滤质器并联的可变电容器,被配置为将所述质谱仪离子阱或滤质器调谐到特定工作频率范围。
12.一种用于驱动质谱仪离子阱或滤质器的射频RF驱动系统,包括:
变压器,其具有耦接到所述质谱仪离子阱或滤质器的次级绕组;
RF增益级,其具有耦接到所述变压器的初级绕组的输出;以及
频率和振幅可编程RF源,其生成耦接到所述RF增益级的输入的信号,所述可编程RF源的电路被配置为使得所述可编程RF源的频率被动态地调整,以便当驱动所述质谱仪离子阱或滤质器时将提供给所述RF增益级的功率电平降低到最低。
13.一种操作质谱仪的方法,包括:
通过信号驱动所述质谱仪,以便捕获其中的离子,其中用于驱动所述质谱仪的电路包括经由变压器耦接到所述质谱仪的RF增益级,并且其中,射频发生器被耦接到所述RF增益级的输入;
监视在驱动所述质谱仪时提供给所述RF增益级的功率电平,并生成与所述功率电平成比例的反馈信号;以及
耦接所述反馈信号以调整所述RF发生器的频率,以便当驱动所述质谱仪时降低提供给所述RF增益级的功率电平。
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JP5323384B2 (ja) * | 2008-04-14 | 2013-10-23 | 株式会社日立製作所 | 質量分析計および質量分析方法 |
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- 2009-05-26 US US12/472,111 patent/US7973277B2/en active Active
- 2009-05-27 CN CN200980129341.6A patent/CN102171783B/zh not_active Expired - Fee Related
- 2009-05-27 AU AU2009260573A patent/AU2009260573B2/en not_active Ceased
- 2009-05-27 CA CA2725525A patent/CA2725525A1/en not_active Abandoned
- 2009-05-27 AT AT09767291T patent/ATE548748T1/de active
- 2009-05-27 WO PCT/US2009/045283 patent/WO2009154979A2/en active Application Filing
- 2009-05-27 EP EP09767291A patent/EP2301061B1/en not_active Not-in-force
- 2009-05-27 JP JP2011511776A patent/JP5612568B2/ja not_active Expired - Fee Related
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2011
- 2011-09-20 HK HK11109887.4A patent/HK1155850A1/xx not_active IP Right Cessation
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CN102324374A (zh) * | 2011-09-28 | 2012-01-18 | 上海大学 | 一种用于质谱仪的射频电源 |
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Also Published As
Publication number | Publication date |
---|---|
JP5612568B2 (ja) | 2014-10-22 |
JP2011522379A (ja) | 2011-07-28 |
US7973277B2 (en) | 2011-07-05 |
CA2725525A1 (en) | 2009-12-23 |
CN102171783B (zh) | 2014-04-02 |
WO2009154979A2 (en) | 2009-12-23 |
AU2009260573A1 (en) | 2009-12-23 |
EP2301061A2 (en) | 2011-03-30 |
EP2301061B1 (en) | 2012-03-07 |
WO2009154979A3 (en) | 2010-02-25 |
ATE548748T1 (de) | 2012-03-15 |
US20090294657A1 (en) | 2009-12-03 |
HK1155850A1 (en) | 2012-05-25 |
AU2009260573B2 (en) | 2014-02-27 |
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