CN106404187A - Non-refrigerated focal plane infrared detector chip vacuum packaging structure and process - Google Patents
Non-refrigerated focal plane infrared detector chip vacuum packaging structure and process Download PDFInfo
- Publication number
- CN106404187A CN106404187A CN201610916727.3A CN201610916727A CN106404187A CN 106404187 A CN106404187 A CN 106404187A CN 201610916727 A CN201610916727 A CN 201610916727A CN 106404187 A CN106404187 A CN 106404187A
- Authority
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- Prior art keywords
- detector chip
- infrared detector
- housing
- optical window
- film getter
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- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000009461 vacuum packaging Methods 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000005538 encapsulation Methods 0.000 claims description 20
- 238000005057 refrigeration Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 230000004913 activation Effects 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 4
- IXZYARGJSZWZAO-UHFFFAOYSA-N [Zr].[Co].[Ir] Chemical compound [Zr].[Co].[Ir] IXZYARGJSZWZAO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000000712 assembly Effects 0.000 abstract 2
- 238000000429 assembly Methods 0.000 abstract 2
- 238000007599 discharging Methods 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 241000973497 Siphonognathus argyrophanes Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a non-refrigerated focal plane infrared detector chip vacuum packaging structure and process, in particular, a highly reliable, small sized and highly integrated non-refrigerated focal plane infrared detector chip vacuum packaging structure and process. The packaging structure of the invention comprises a shell, a film getter, an infrared detector chip and an optical window. The infrared detector chip is welded to the bottom of the shell through the use of a solder sheet in a hot melting manner; the film getter is arranged on the optical window, and the optical window is welded to the shell. The shell is a ceramic shell with an opening at the upper part, a metal pad prepared inside, and a pin arranged at the back of the shell. The infrared detector chip is connected with the metal pad through golden wires and is electrically communicated with its external part through the metal pad and the pin. The present invention eliminates the need for a thermoelectric refrigerator. Through the use of a film getter, the size of the device is reduced; at the same time, as all assemblies employ solder sheets, the air discharging factor among the assemblies is reduced; and the air discharging can be completed in the process of assembly packaging.
Description
Technical field
The present invention relates to non-refrigeration focal surface Infrared Detectorss, especially a kind of good reliability, getter are grown directly upon
On infrared window, the high non-refrigeration focal surface infrared detector chip vacuum encapsulation structure of small volume, integrated level and technique.
Background technology
In recent years, with being gradually reduced of Manufacturing cost of constantly improving of non-refrigeration focal surface Infrared Detectorss technology,
Its cost performance fast lifting, the mass market application for promoting non-refrigeration focal surface Infrared Detectorss creates good condition.
Non-refrigeration focal surface Infrared Detectorss are mainly made up of parts such as reading circuit, detector pixel, getter, encapsulation.Encapsulation
Form directly determines performance, reliability and the price of non-refrigeration focal surface infrared detector module.
At present, the packing forms of the main product on market are mainly Metal Packaging, have the square of opening including one
Housing, housing carries an oxygen-free copper pipe being used for aerofluxuss；Housing sidewall is welded with setting inside ceramic component, ceramic component
Metal pad, outside setting metal pins, metal pad is connected with metal pins；Setting detector chip and thermoelectricity system in housing
Cooler, detector chip passes through metal pad with thermoelectric refrigerator, metal pins are electrically connected with outside realization, realize signal communication
With control；Detector chip silver paste is attached in thermoelectric refrigerator, and thermoelectric refrigerator is then welded on Housing Base, thermoelectric cooling
Device plays the effect of constant temperature, and working for non-refrigeration focal surface infrared detector chip provides the working condition of an equilibrium temperature；
Getter is then welded on enclosure interior on the pin of aerofluxuss straight tube mouth, plays getter action, between optical window and housing
Sealing welding, then completes vacuum exhaust, oxygen-free copper pipe is more than part and deducts, and coat vacuum compound, such non-brake method
Focal plane infrared detector chip is just sealed in a closed environment, and outside infrared signal is incided by optical window
On infrared focal plane detector chip.Using this packing forms, there are following three aspects, one is due to employing thermoelectricity
Refrigerator and getter, increase encapsulated space, are unfavorable for reducing the volume of detector, the components and parts of this encapsulation are relatively simultaneously
Many, power consumption is high, with high costs and complex process；Two is due to employing thermoelectric refrigerator, column or chip getter, silver
Slurry paster etc., the reliability effect of thermoelectric refrigerator and the getter reliability of assembly, thermoelectric refrigerator and silver paste venting
The life-span of getter and the vacuum of assembly can be directly affected so that the reliability of assembly reduces；Three is due to using this encapsulation
Form needs aerofluxuss, and the release is longer, packaging efficiency and relatively costly.
Content of the invention
To be solved by this invention is exactly deficiency in existing non-refrigeration focal surface Infrared Detectorss packaging technology, provides one
Kind good reliability, the non-refrigeration focal surface Infrared Detectorss that getter is grown directly upon on infrared window, small volume, integrated level are high
Chip vacuum encapsulating structure and technique.
The non-refrigeration focal surface infrared detector chip vacuum encapsulation structure of the present invention and technique are it is characterised in that this encapsulation
Structure includes housing, thin film getter, infrared detector chip and optical window, and infrared detector chip utilizes solder sheet to lead to
Cross hot melting way and be welded on housing inner bottom part, on optical window, optical window is welded on housing thin film getter length；Housing
For ceramic cartridge, upper opening, preparation at opening has metal pad, and housing back is provided with pin, infrared detector chip profit
It is connected with metal pad with spun gold, be electrically connected with outside realization by metal pad, pin.
Non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique are it is characterised in that this structure is by following
Processing step is realized：
1）At the infrared detector chip back side, metal electrode is grown using sputtering mode, will be red by hot melting way using solder sheet
External detector chip is welded on housing inner bottom part, and infrared detector chip is connected with metal pad by spun gold；
2）Growing film getter on optical window, and complete the hot activation of thin film getter under vacuum conditions；
3）By step 2）Optical window be welded on step 1）Housing on, make a closed cavity, complete non-brake method
The vacuum encapsulation process of focal plane infrared detector chip.
The solder sheet that described infrared detector chip is adopted with case weld is tin-lead solder piece.
The activationary temperature of described thin film getter is 350 degree, activationary time 30min.
Described thin film getter is hot activation thin film getter, and its material is zirconium cobalt iridium, in optical window and housing weldering
Complete hot activation before connecing, to keep it to the adsorption of inside cavity residual gas it is ensured that inside cavity vacuum problem, carry
The high reliability of assembly.
The non-refrigeration focal surface infrared detector chip vacuum encapsulation structure of the present invention and technique, using ceramic package skill
Art, without thermoelectric refrigerator, the thin film getter of employing, effectively reduces device volume, and all assemblings are all using weldering simultaneously
Tablet, decreases the venting factor of component internal, improves reliability, reduce old, and assembly is in encapsulation process
Just complete aerofluxuss, decrease the release, improve production efficiency, manufacture process is simple.
Brief description
Fig. 1 is encapsulating structure schematic diagram of the present invention.
Wherein, housing 1, metal pad 2, pin 3.
Specific embodiment
Embodiment 1：A kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique, this encapsulating structure bag
Include housing 1, thin film getter, infrared detector chip and optical window, infrared detector chip utilizes solder sheet to pass through heat
Molten mode is welded on housing 1 inner bottom part, and on optical window, optical window is welded on housing 1 thin film getter length；Housing 1
For ceramic cartridge, upper opening, preparation at opening has metal pad 2, and housing 1 back is provided with pin 3, infrared detector chip
It is connected with metal pad 2 using spun gold, be electrically connected with outside realization by metal pad 2, pin 3.
This encapsulating structure is realized by following processing step：
1）At the infrared detector chip back side, metal electrode is grown using sputtering mode, will be red by hot melting way using solder sheet
External detector chip is welded on housing 1 inner bottom part, and infrared detector chip is connected with metal pad 2 by spun gold；
2）Growing film getter on optical window, and complete the hot activation of thin film getter under vacuum conditions；
3）By step 2）Optical window be welded on step 1）Housing 1 on, make a closed cavity, complete non-brake method
The vacuum encapsulation process of focal plane infrared detector chip.
The solder sheet that infrared detector chip is adopted with housing 1 welding is tin-lead solder piece.The activation temperature of thin film getter
Spend for 350 degree, activationary time 30min.Thin film getter is hot activation thin film getter, and its material is zirconium cobalt iridium, in optical window
Hot activation is completed, to keep it to the adsorption of inside cavity residual gas it is ensured that inside cavity is true before mouth and housing 1 welding
Reciprocal of duty cycle problem, improves the reliability of assembly.
Claims (5)
1. a kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique are it is characterised in that this encapsulating structure bag
Include housing（1）, thin film getter, infrared detector chip and optical window, infrared detector chip passed through using solder sheet
Hot melting way is welded on housing（1）Inner bottom part, on optical window, optical window is welded on housing to thin film getter length（1）On；
Housing（1）For ceramic cartridge, upper opening, preparation at opening has metal pad（2）, housing（1）Back is provided with pin（3）,
Infrared detector chip utilizes spun gold and metal pad（2）Connect, by metal pad（2）, pin（3）It is electrically connected with outside realization
Logical.
2. a kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique as claimed in claim 1, it is special
Levy and be that this structure is realized by following processing step：
1）At the infrared detector chip back side, metal electrode is grown using sputtering mode, will be red by hot melting way using solder sheet
External detector chip is welded on housing（1）Inner bottom part, infrared detector chip passes through spun gold and metal pad（2）Connect；
2）Growing film getter on optical window, and complete the hot activation of thin film getter under vacuum conditions；
3）By step 2）Optical window be welded on step 1）Housing（1）On, make a closed cavity, complete non-system
The vacuum encapsulation process of cold focal plane infrared detector chip.
3. a kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique as claimed in claim 1, it is special
Levy and be described infrared detector chip and housing（1）The solder sheet that welding adopts is tin-lead solder piece.
4. a kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique as claimed in claim 1, it is special
Levy and be that the activationary temperature of described thin film getter is 350 degree, activationary time 30min.
5. a kind of non-refrigeration focal surface infrared detector chip vacuum encapsulation structure and technique as claimed in claim 1, it is special
Levy and be that described thin film getter is hot activation thin film getter, its material is zirconium cobalt iridium, in optical window and housing（1）Weldering
Complete hot activation before connecing, to keep it to the adsorption of inside cavity residual gas it is ensured that inside cavity vacuum problem, carry
The high reliability of assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610916727.3A CN106404187A (en) | 2016-10-21 | 2016-10-21 | Non-refrigerated focal plane infrared detector chip vacuum packaging structure and process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610916727.3A CN106404187A (en) | 2016-10-21 | 2016-10-21 | Non-refrigerated focal plane infrared detector chip vacuum packaging structure and process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106404187A true CN106404187A (en) | 2017-02-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610916727.3A Pending CN106404187A (en) | 2016-10-21 | 2016-10-21 | Non-refrigerated focal plane infrared detector chip vacuum packaging structure and process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106404187A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107246889A (en) * | 2017-06-22 | 2017-10-13 | 江苏物联网研究发展中心 | Shell structure and infrared sensor encapsulating structure for non-refrigerating infrared sensor Vacuum Package |
| CN107275415A (en) * | 2017-05-27 | 2017-10-20 | 中国科学院上海技术物理研究所 | The focal plane infrared detector module encapsulating structure of integrated multilevel TEC |
| CN109950328A (en) * | 2019-04-11 | 2019-06-28 | 江苏鼎茂半导体有限公司 | A kind of infrared sensor vacuum encapsulation structure and vacuum packaging method |
| CN109979883A (en) * | 2019-04-30 | 2019-07-05 | 烟台艾睿光电科技有限公司 | A kind of integrated device mould group |
| CN110078020A (en) * | 2019-05-10 | 2019-08-02 | 江苏物联网研究发展中心 | A kind of vacuum bakeout technique based on getter thermo-electrically compounding activation |
| CN111627786A (en) * | 2020-04-26 | 2020-09-04 | 天津迈刻微科电子科技有限公司 | Miniature X-ray source and preparation method thereof |
| CN113964233A (en) * | 2021-09-07 | 2022-01-21 | 云南昆物新跃光电科技有限公司 | Packaging method of low-temperature vacuum infrared detector |
| CN114300576A (en) * | 2021-12-27 | 2022-04-08 | 东莞先导先进科技有限公司 | Method for packaging detector |
| CN114628532A (en) * | 2022-04-06 | 2022-06-14 | 江苏鼎茂半导体有限公司 | Novel packaging structure of infrared image sensor |
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| JP2004301699A (en) * | 2003-03-31 | 2004-10-28 | Mitsubishi Electric Corp | Infrared detector |
| CN103119925A (en) * | 2010-07-27 | 2013-05-22 | 菲力尔系统公司 | Infrared camera architecture systems and methods |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275415B (en) * | 2017-05-27 | 2023-05-05 | 中国科学院上海技术物理研究所 | Focal plane infrared detector assembly packaging structure of integrated multi-stage thermoelectric refrigerator |
| CN107275415A (en) * | 2017-05-27 | 2017-10-20 | 中国科学院上海技术物理研究所 | The focal plane infrared detector module encapsulating structure of integrated multilevel TEC |
| CN107246889A (en) * | 2017-06-22 | 2017-10-13 | 江苏物联网研究发展中心 | Shell structure and infrared sensor encapsulating structure for non-refrigerating infrared sensor Vacuum Package |
| CN109950328A (en) * | 2019-04-11 | 2019-06-28 | 江苏鼎茂半导体有限公司 | A kind of infrared sensor vacuum encapsulation structure and vacuum packaging method |
| CN109979883A (en) * | 2019-04-30 | 2019-07-05 | 烟台艾睿光电科技有限公司 | A kind of integrated device mould group |
| CN110078020A (en) * | 2019-05-10 | 2019-08-02 | 江苏物联网研究发展中心 | A kind of vacuum bakeout technique based on getter thermo-electrically compounding activation |
| CN110078020B (en) * | 2019-05-10 | 2022-02-08 | 江苏物联网研究发展中心 | Vacuum baking process based on getter thermal-electric composite activation |
| CN111627786A (en) * | 2020-04-26 | 2020-09-04 | 天津迈刻微科电子科技有限公司 | Miniature X-ray source and preparation method thereof |
| CN113964233A (en) * | 2021-09-07 | 2022-01-21 | 云南昆物新跃光电科技有限公司 | Packaging method of low-temperature vacuum infrared detector |
| CN113964233B (en) * | 2021-09-07 | 2024-01-23 | 云南昆物新跃光电科技有限公司 | Packaging method of low-temperature vacuum infrared detector |
| CN114300576A (en) * | 2021-12-27 | 2022-04-08 | 东莞先导先进科技有限公司 | Method for packaging detector |
| CN114628532A (en) * | 2022-04-06 | 2022-06-14 | 江苏鼎茂半导体有限公司 | Novel packaging structure of infrared image sensor |
| CN114628532B (en) * | 2022-04-06 | 2024-05-14 | 江苏鼎茂半导体有限公司 | Novel packaging structure of infrared image sensor |
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Application publication date: 20170215 |
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