CN106409772B - Highly reliable surface-pasted diode of one kind and preparation method thereof - Google Patents
Highly reliable surface-pasted diode of one kind and preparation method thereof Download PDFInfo
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- CN106409772B CN106409772B CN201611083008.4A CN201611083008A CN106409772B CN 106409772 B CN106409772 B CN 106409772B CN 201611083008 A CN201611083008 A CN 201611083008A CN 106409772 B CN106409772 B CN 106409772B
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- connecting hole
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000005245 sintering Methods 0.000 claims abstract description 38
- 229910000679 solder Inorganic materials 0.000 claims abstract description 37
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- 238000003466 welding Methods 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 238000005476 soldering Methods 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000012216 screening Methods 0.000 claims description 8
- 241000500881 Lepisma Species 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 4
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000004048 modification Effects 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 4
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The present invention provides a kind of highly reliable surface-pasted diodes and preparation method thereof, the diode component uses ceramic and metal package, chip is sintered to fix by solder in the sintering zone of shell, the bonding region of chip is connected with bonding wire with the bonding region of shell by the way of ultrasonic bond and parallel seam welding seals, original plastic packaged device is overcome because of working environment limited the problem of cannot be used for highly reliable devices field, the surface mount diode makes original circuit realize substitution in situ in the case where not changing pad size i.e. circuit board without modification, and reliability is improved, production and processing technology is simpler, convenient for producing in enormous quantities.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, more particularly, to a kind of highly reliable surface-pasted diode and its
Preparation method.
Background technique
Currently, the fields such as space flight, aviation, ship, weapons largely use the surface mount diode of a constant current or power
Device, it is desirable that the features such as thermal resistance is small, impact resistance is good, high reliablity provides premise to improve whole aircraft reliability.
Currently, most of surface-pasted diode component with a constant current or power is Plastic Package.
The semiconductor devices of Plastic Package, is shown in Fig. 1, by plastic packaging material and production technology limited its operating temperature range and
Reliability all can not meet the requirement of adverse circumstances, especially be unable to long-term work in the case where moist and salt gas weight,
The characteristics of it is encapsulated determines that it cannot be used for highly reliable field.
Therefore, how a kind of high reliablity is provided and production and processing technology is simpler, convenient for the diode of mass production
The problem of device is those skilled in the art's urgent need to resolve.
Summary of the invention
The purpose of the present invention is to provide a kind of highly reliable surface-pasted diode, the high reliablity of the diode and life
It is simpler to produce processing technology, convenient for producing in enormous quantities.Another object of the present invention is to provide a kind of above-mentioned highly reliable surface
The preparation method of mounted diode.
In order to solve the above technical problems, technical solution provided by the invention are as follows:
A kind of highly reliable surface-pasted diode, including for the shell of encapsulation, chip, for the chip to be fixed
In the solder on the shell and the bonding wire for connecting the electrode of the electrode of the chip and shell；
The shell includes two pieces of conductive sheets, metal connecting column, base of ceramic, molybdenum sheet, routing piece, becket frame and gold
Belong to cover board；
The pit for placing the chip, the interior bottom of the pit are offered on the portion of upper surface of the base of ceramic
The first connecting hole is offered on face, and the second connecting hole, the base of ceramic are offered on the remaining upper surface of the base of ceramic
Surrounding side on be provided with side metal layer；
The molybdenum sheet is fixed on the first company in the pit on the base of ceramic and in the covering pit by soldering
Connect hole；
The routing piece is fixed on the remaining upper surface of the base of ceramic by soldering and covers second connection
Hole；
The conductive sheet is fixed on the bottom surface of the base of ceramic by soldering；
Metal connecting column, and the upper end of the metal connecting column in first connecting hole are provided in first connecting hole
With the lower surface soldering connection of the molybdenum sheet, the lower end of the metal connecting column in first connecting hole and one piece of conductive sheet
Upper surface soldering connection；
Metal connecting column, and the upper end of the metal connecting column in second connecting hole are provided in second connecting hole
With the lower surface soldering connection of the routing piece, the lower end of the metal connecting column in second connecting hole with led described in another piece
The upper surface soldering connection of electric piece；
The becket frame is fixed at the surrounding edge on the upper surface of the base of ceramic by soldering；
The metal cover board is fixed on the upper surface of becket frame opening by parallel seam welding sealing；
The chip is sintered to fix on the molybdenum sheet by solder；
One end of the bonding wire is connect with the bonding region of the chip, and the other end of the bonding wire and the shell
In routing piece connection.
Preferably, the back side of the chip is provided with three layers composite metal layer, from inside to outside successively titanium-nickel-silver, described
The front of chip is aluminium layer, and the thickness of the aluminium layer is greater than 2 microns.
Preferably, the solder is slicker solder silver solder.
Preferably, the bonding wire is aluminium wire, and diameter is 250 μm.
Present invention also provides a kind of preparation methods of above-mentioned highly reliable surface-pasted diode, including following step
It is rapid:
1) chip is sintered:
After die Bonder temperature is stablized, sufficiently connect with the preheating zone of sintering furnace with sintering zone respectively with the temperature measuring head of point thermometer
Touching controls preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, is then started to supply hydrogen and nitrogen into sintering furnace, is controlled hydrogen flowing quantity
For 600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
It takes a shell to put to preheating zone and carries out the pre-heat treatment, control preheating zone surface temperature is 200 DEG C ± 5 DEG C, preheating
Time is 4min~6min；
Then shell is put to sintering zone and is sintered, control sintering zone surface temperature is 400 DEG C ± 10 DEG C, sintering
Time is not more than 2min；
Then welding wire is picked up, makes the molybdenum sheet of wire tip contact shell, wire tip melted by heat is at solder droplets in shell
Molybdenum sheet on, then chip is lain on solder, moving chip until chip surrounding edge outside it can be seen that solder；
Then bluff piece of going bail for is lain on chip, and it is cold that the shell with chip is then placed on the progress of nitrogen nozzle
But, screening glass 2s~3s is then pushed, removes screening glass after cooling 10min；
2) ultrasonic bond
It first passes through ultrasonic bond processing to connect one end of the bonding wire with the routing piece in the shell, then by super
The other end of the bonding wire is connect by sound bonding processing with the bonding region of the chip, opposite in control ultrasonic bond processing
Ultrasonic power is 100~150W, and opposite ultrasonic time is 150~300ms, and opposite ultrasonic pressure is 20~26gf；
3) parallel seam welding
Metal cover board sealing is fixed on the upper surface of becket frame opening by parallel seam welding, controls spot welding
Power is 1400W~1600W, and seam weld power is 1600W~1800W, and seam weld pressure is 0.98N~1.176N, and the pulse period is
90ms~110ms, pulse width are 6ms~10ms, and speed is 2.0mm/s~3.0mm/s；So far diode preparation is completed.
Preferably, the welding wire is slicker solder silver wire, and ingredient is Pb92.5%-Sn5%-Ag2.5%.
Preferably, the bonding wire is aluminium wire, and diameter is 250 μm, and purity is more than or equal to 99.99%.
Compared with prior art, the present invention provides a kind of highly reliable surface-pasted diodes and preparation method thereof, originally
Application meets semiconductor devices to the reliability requirement of shell using ceramic and metal package, meets the electricity in semiconductor devices
Requirement of the road to sealing and high dielectric withstanding voltage, and structure is simple, and the shell adapts to the envelope of a plurality of types of chips
Dress especially needs to be bonded the encapsulation of the chip of more bonding wires or line row or sintering conduction band, metal pottery with big surge current
Ceramic shell belongs to leakproofness shell, can solve the moisture sucking problem of plastic packaged device in wet condition, cermet
Envelope operating temperature range is wider than plastic packaging, has the operating temperature of the plastic packaged device of a constant current or power requirement general
At 85 DEG C hereinafter, and the limit of working temperature range of chip may be implemented in ceramic and metal package；
Chip is sintered to fix on the sintering zone of shell by the application by solder, is carried out using low-temperature alloy solder quick
Alloy sintering solves the problems, such as the matched coefficients of thermal expansion between housing base material and chip, cooperates nitrogen in sintering process
The control of hydrogen protective atmosphere prevents the appearance of oxide layer, reduces sintering temperature and sintering time to the shadow of product high-temperature behavior
It rings；
Plastic packaged device operating temperature be limited reason first is that connected by way of sintering between exit,
When temperature change is larger, the thermal expansion coefficient difference of different materials, which generates internal stress, to be discharged, it is easy to chip be caused to damage
Hurt and lead to component failure, thus the application by the way of ultrasonic bond with bonding wire the bonding region of chip and the key of shell
It closes area to be connected, adopts high-purity aluminium wire ultrasonic bond, bonding wire has certain radian, and material thermal expansion coefficient is different in temperature change
The internal stress of generation can discharge, it is ensured that the reliability of semiconductor devices work, while device is carried out before being bonded
Plasma cleaning removes chip surface, oxide layer and impurity in wire bonding area, guarantees that contact is reliable between sintering solder joint,
To guarantee product long-term reliability；
The mode of parallel seam welding is finally taken to be sealed connected together the becket frame in the cover board and shell in shell,
The entirety of a sealing is formed, so that product of the present invention is cavity air locking, for the semitight of plastic device,
Quality and reliability are increased dramatically.
To sum up, this application provides a kind of highly reliable surface-pasted diode and preparation method thereof, the diode components
Using ceramic and metal package, chip with bonding in such a way that solder is sintered to fix in the sintering zone of shell, using ultrasonic bond
The bonding region of chip is connected silk with the bonding region of shell and parallel seam welding seals, and overcomes original plastic packaged device because of work
Make environment limited the problem of cannot be used for highly reliable devices field, which makes original circuit not change weldering
Disk size, that is, circuit board without modification in the case where realize substitution in situ, and reliability is improved, production and processing technology compared with
Simply, convenient for mass production.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of surface pasted plastic packaged device in the prior art；
Fig. 2 is the decomposition texture signal of the shell of the highly reliable surface-pasted diode of one kind provided in an embodiment of the present invention
Figure；
Fig. 3 removes the structural schematic diagram of the base of ceramic and becket frame after cover board for the shell in Fig. 2；
Fig. 4 is the schematic cross-sectional view of the highly reliable surface-pasted diode of one kind provided in an embodiment of the present invention；
Fig. 5 is the main view of the diode in Fig. 4；
Fig. 6 is the bottom view of the diode in Fig. 4.
In figure: 1 conductive sheet, 2 metal connecting columns, 3 base of ceramic, 4 molybdenum sheets, 5 routing pieces, 6 becket frames, 7 metal cover boards,
8 second connecting holes, 9 side metal layers, 10 pits, 11 chips, 12 solders, 13 bonding wires.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", " axial direction ", " radial direction ", " longitudinal direction ", " transverse direction ",
" length ", " width ", "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outside", " clockwise ", " inverse
The orientation or positional relationship of the instructions such as hour hands ", "vertical", "horizontal" is to be based on the orientation or positional relationship shown in the drawings, and is only
For the convenience of describing the present invention and simplifying the description, rather than the device or element of indication or suggestion meaning must have specific side
Position is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower",
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is in the surface and oblique upper of second feature, or is merely representative of first feature horizontal height higher than second feature.First is special
Sign includes fisrt feature in the underface and obliquely downward of second feature under the second feature " below ", " below " and " below ", or only
Only indicate that first feature horizontal height is less than second feature.
Referring to Fig.1~Fig. 6, Fig. 1 are the structural schematic diagram of surface pasted plastic packaged device in the prior art；Fig. 2 is the present invention
The decomposition texture schematic diagram of the shell for the highly reliable surface-pasted diode of one kind that embodiment provides；Fig. 3 is the shell in Fig. 2
The structural schematic diagram of base of ceramic and becket frame after removing cover board；Fig. 4 is that one kind provided in an embodiment of the present invention is highly reliable
The schematic cross-sectional view of surface-pasted diode；Fig. 5 is the main view of the diode in Fig. 4；Fig. 6 is two poles in Fig. 4
The bottom view of pipe.
This application provides a kind of highly reliable surface-pasted diode, including for encapsulation shell, chip 11, be used for
By solder 12 that the chip 11 is fixed on the shell and it is used to connect at the electrode of the electrode of the chip 11 and shell
The bonding wire 13 connect；
The shell includes two pieces of conductive sheets 1, metal connecting column 2, base of ceramic 3, molybdenum sheet 4, routing piece 5, becket frame 6
And metal cover board 7；
The pit 10 for placing the chip 11, the pit are offered on the portion of upper surface of the base of ceramic 3
The first connecting hole is offered on 10 inner bottom surface, and the second connecting hole 8, institute are offered on the remaining upper surface of the base of ceramic 3
It states and is provided with side metal layer 9 on the surrounding side of base of ceramic 3；
The molybdenum sheet 4 is fixed in the pit 10 on the base of ceramic 3 and is covered in the pit 10 by soldering
First connecting hole；
The routing piece 5, which is fixed on the remaining upper surface of the base of ceramic 3 by soldering and covers described second, to be connected
Connect hole 8；
The conductive sheet 1 is fixed on the bottom surface of the base of ceramic 3 by soldering；
Metal connecting column 2 is provided in first connecting hole, and the metal connecting column 2 in first connecting hole is upper
End and the lower surface soldering connection of the molybdenum sheet 4, the lower end of the metal connecting column 2 in first connecting hole with led described in one piece
The upper surface soldering connection of electric piece 1；
It is provided with metal connecting column 2 in second connecting hole 8, and the metal connecting column 2 in second connecting hole 8
The lower surface soldering connection of upper end and the routing piece 5, the lower end of the metal connecting column 2 in second connecting hole 8 with it is another
The upper surface soldering connection of conductive sheet 1 described in block；
The becket frame 6 is fixed at the surrounding edge on the upper surface of the base of ceramic 3 by soldering；
The metal cover board 7 is fixed on the upper surface of the becket frame 6 opening by parallel seam welding sealing；
The chip 11 is sintered to fix on the molybdenum sheet 4 by solder 12；
One end of the bonding wire 13 is connect with the bonding region of the chip 11, and the other end of the bonding wire 13 and institute
The routing piece 5 stated in shell connects.
In one embodiment of the invention, the back side of the chip 11 is provided with three layers composite metal layer, from it is interior to
Successively titanium-nickel-silver, the front of the chip 11 are aluminium layer outside, and the thickness of the aluminium layer is greater than 2 microns.
In one embodiment of the invention, the solder 12 is slicker solder silver solder.
In one embodiment of the invention, the bonding wire 13 is aluminium wire, and diameter is 250 μm.
Present invention also provides a kind of preparation methods of above-mentioned highly reliable surface-pasted diode, including following step
It is rapid:
1) chip is sintered:
After die Bonder temperature is stablized, sufficiently connect with the preheating zone of sintering furnace with sintering zone respectively with the temperature measuring head of point thermometer
Touching controls preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, is then started to supply hydrogen and nitrogen into sintering furnace, is controlled hydrogen flowing quantity
For 600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
It takes a shell to put to preheating zone and carries out the pre-heat treatment, control preheating zone surface temperature is 200 DEG C ± 5 DEG C, preheating
Time is 4min~6min；
Then shell is put to sintering zone and is sintered, control sintering zone surface temperature is 400 DEG C ± 10 DEG C, sintering
Time is not more than 2min；
Then welding wire is picked up, makes the molybdenum sheet 4 of wire tip contact shell, wire tip melted by heat is at solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of surrounding edge of chip 11 can
See solder 12；
Then bluff piece of going bail for is lain on chip 11, and the shell with chip 11 is then placed on nitrogen nozzle and is carried out
It is cooling, screening glass 2s~3s is then pushed, removes screening glass after cooling 10min；
2) ultrasonic bond
It first passes through ultrasonic bond processing to connect one end of the bonding wire 13 with the routing piece 5 in the shell, then leads to
It crosses ultrasonic bond processing to connect the other end of the bonding wire 13 with the bonding region of the chip 11, control ultrasonic bond processing
In opposite ultrasonic power be 100~150W, opposite ultrasonic time is 150~300ms, and opposite ultrasonic pressure is 20~26gf；
3) parallel seam welding
The metal cover board 7 sealing is fixed on the upper surface of the becket frame 6 opening, control point by parallel seam welding
Weldering power is 1400W~1600W, and seam weld power is 1600W~1800W, and seam weld pressure is 0.98N~1.176N, pulse period
For 90ms~110ms, pulse width is 6ms~10ms, and speed is 2.0mm/s~3.0mm/s；So far diode preparation is completed.
In one embodiment of the invention, the welding wire is slicker solder silver wire, and ingredient is Pb92.5%-Sn5%-
Ag2.5%.
In one embodiment of the invention, the bonding wire 13 is aluminium wire, and diameter is 250 μm, and purity is more than or equal to
99.99%.
It is highly reliable surface-pasted to one kind provided by the invention below with reference to embodiment for a further understanding of the present invention
The preparation method of diode is described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
A kind of preparation method of highly reliable surface-pasted diode, comprising the following steps:
1) chip is sintered:
After die Bonder temperature is stablized, sufficiently connect with the preheating zone of sintering furnace with sintering zone respectively with the temperature measuring head of point thermometer
Touching controls preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, is then started to supply hydrogen and nitrogen into sintering furnace, is controlled hydrogen flowing quantity
For 600mL/min, nitrogen flow 6L/min；
It takes a shell to put to preheating zone and carries out the pre-heat treatment, control preheating zone surface temperature is 200 DEG C, and preheating time is
5min；
Then shell is put to sintering zone and is sintered, control sintering zone surface temperature is 410 DEG C, and sintering time is
1.5min；
Then welding wire is picked up, makes the molybdenum sheet 4 of wire tip contact shell, wire tip melted by heat is at solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of surrounding edge of chip 11 can
See solder 12；
The welding wire is slicker solder silver wire, and ingredient is Pb92.5%-Sn5%-Ag2.5%.
Then bluff piece of going bail for is lain on chip 11, and the shell with chip 11 is then placed on nitrogen nozzle and is carried out
It is cooling, screening glass 3s is then pushed, removes screening glass after cooling 10min；
2) ultrasonic bond
It first passes through ultrasonic bond processing to connect one end of the bonding wire 13 with the routing piece 5 in the shell, then leads to
It crosses ultrasonic bond processing to connect the other end of the bonding wire 13 with the bonding region of the chip 11, control ultrasonic bond processing
In opposite ultrasonic power be 135W, opposite ultrasonic time is 250ms, and opposite ultrasonic pressure is 25gf；
The bonding wire 13 is aluminium wire, and diameter is 250 μm, purity 99.99%；
3) parallel seam welding
The metal cover board 7 sealing is fixed on the upper surface of the becket frame 6 opening, control point by parallel seam welding
Weldering power is 1500W, and seam weld power is 1700W, and seam weld pressure is 1.1N, pulse period 100ms, pulse width 8ms, speed
Degree is 2.6mm/s；So far diode preparation is completed.
The method and apparatus of the not detailed description of the present invention are the prior art, are repeated no more.
Principle and implementation of the present invention are described for specific embodiment used herein, above embodiments
Illustrate to be merely used to help understand method and its core concept of the invention.It should be pointed out that for the common skill of the art
, without departing from the principle of the present invention, can be with several improvements and modifications are made to the present invention for art personnel, these change
It is also fallen within the protection scope of the claims of the present invention into modification.
Claims (5)
1. a kind of preparation method of highly reliable surface-pasted diode, which is characterized in that the diode includes for encapsulating
Shell, chip, the solder for the chip to be fixed on the shell and be used for the electrode of the chip and outer
The bonding wire of the electrode connection of shell；
The shell includes two pieces of conductive sheets, metal connecting column, base of ceramic, molybdenum sheet, routing piece, becket frame and metal cover
Plate；
The pit for placing the chip is offered on the portion of upper surface of the base of ceramic, on the inner bottom surface of the pit
The first connecting hole is offered, offers the second connecting hole on the remaining upper surface of the base of ceramic, the four of the base of ceramic
Side metal layer is provided on all sides；
The molybdenum sheet is fixed on the first connecting hole in the pit on the base of ceramic and in the covering pit by soldering；
The routing piece is fixed on the remaining upper surface of the base of ceramic by soldering and covers second connecting hole；
The conductive sheet is fixed on the bottom surface of the base of ceramic by soldering；
Metal connecting column, and the upper end of the metal connecting column in first connecting hole and institute are provided in first connecting hole
State the lower surface soldering connection of molybdenum sheet, the lower end of the metal connecting column in first connecting hole is upper with one piece of conductive sheet
Surface soldering connection；
Metal connecting column, and the upper end of the metal connecting column in second connecting hole and institute are provided in second connecting hole
State the lower surface soldering connection of routing piece, the lower end of the metal connecting column in second connecting hole and another piece of conductive sheet
Upper surface soldering connection；
The becket frame is fixed at the surrounding edge on the upper surface of the base of ceramic by soldering；
The metal cover board is fixed on the upper surface of becket frame opening by parallel seam welding sealing；
The chip is sintered to fix on the molybdenum sheet by solder；
One end of the bonding wire is connect with the bonding region of the chip, and in the other end of the bonding wire and the shell
The connection of routing piece；
The preparation method of the diode the following steps are included:
1) chip is sintered:
After die Bonder temperature is stablized, come into full contact with respectively with the preheating zone of sintering furnace with sintering zone with the temperature measuring head of point thermometer,
Preheating zone and sintering zone surface temperature are controlled in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, then starts to supply hydrogen and nitrogen into sintering furnace, and control hydrogen flowing quantity is
600mL/min ± 100mL/min, nitrogen flow are 5L/min ± 1L/min；
It takes a shell to put to preheating zone and carries out the pre-heat treatment, control preheating zone surface temperature is 200 DEG C ± 5 DEG C, preheating time
For 4min~6min；
Then shell is put to sintering zone and is sintered, control sintering zone surface temperature is 400 DEG C ± 10 DEG C, sintering time
No more than 2min；
Then welding wire is picked up, makes the molybdenum sheet of wire tip contact shell, wire tip melted by heat is at solder droplets in the molybdenum of shell
Then on piece lies in chip on solder, moving chip is up to the outside of the surrounding edge of chip is it can be seen that solder；
Then bluff piece of going bail for is lain on chip, and the shell with chip is then placed on nitrogen nozzle and is cooled down, so
Screening glass 2s~3s is pushed afterwards, removes screening glass after cooling 10min；
2) ultrasonic bond
It first passes through ultrasonic bond processing to connect one end of the bonding wire with the routing piece in the shell, then passes through ultrasonic key
Processing is closed to connect the other end of the bonding wire with the bonding region of the chip, it is relatively ultrasonic in control ultrasonic bond processing
Power is 100~150W, and opposite ultrasonic time is 150~300ms, and opposite ultrasonic pressure is 20~26gf；
3) parallel seam welding
Metal cover board sealing is fixed on the upper surface of becket frame opening by parallel seam welding, controls spot welding power
For 1400W~1600W, seam weld power is 1600W~1800W, and seam weld pressure is 0.98N~1.176N, pulse period 90ms
~110ms, pulse width are 6ms~10ms, and speed is 2.0mm/s~3.0mm/s；So far diode preparation is completed.
2. preparation method according to claim 1, which is characterized in that the welding wire is slicker solder silver wire, and ingredient is
Pb92.5%-Sn5%-Ag2.5%.
3. preparation method according to claim 1, which is characterized in that the bonding wire is aluminium wire, and diameter is 250 μm, pure
Degree is more than or equal to 99.99%.
4. preparation method according to claim 1, which is characterized in that the back side of the chip is provided with three layers composite metal
Change layer, successively titanium-nickel-silver, the front of the chip are aluminium layer from inside to outside, and the thickness of the aluminium layer is greater than 2 microns.
5. preparation method according to claim 1, which is characterized in that the solder is slicker solder silver solder.
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| CN109712895A (en) * | 2018-12-21 | 2019-05-03 | 中国电子科技集团公司第四十七研究所 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
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| CN205303443U (en) * | 2015-12-16 | 2016-06-08 | 济南市半导体元件实验所 | A highly reliable tube for encapsulating semiconductor device |
| CN206210768U (en) * | 2016-11-30 | 2017-05-31 | 济南市半导体元件实验所 | A kind of highly reliable surface-pasted diode |
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| CN206210768U (en) * | 2016-11-30 | 2017-05-31 | 济南市半导体元件实验所 | A kind of highly reliable surface-pasted diode |
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