CN110078020A - A kind of vacuum bakeout technique based on getter thermo-electrically compounding activation - Google Patents
A kind of vacuum bakeout technique based on getter thermo-electrically compounding activation Download PDFInfo
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- CN110078020A CN110078020A CN201910389354.2A CN201910389354A CN110078020A CN 110078020 A CN110078020 A CN 110078020A CN 201910389354 A CN201910389354 A CN 201910389354A CN 110078020 A CN110078020 A CN 110078020A
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- getter
- temperature
- activation
- electrically
- vacuum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Abstract
The present invention relates to a kind of vacuum bakeout techniques based on getter thermo-electrically compounding activation, belong to technical field of semiconductor encapsulation.Getter activated in advance is participated in degasification by electrically heated mode in the rear half stage of bakeout degassing step by it, using the reactivation characteristic of getter, activated degasser repeatedly, to reach the maximal efficiency of pumping.Terminate baking and getter activation technology after last time activated at, into vacuum welding step.The present invention reduces the time of bakeout degassing on the basis of ensuring that getter finally effectively activates, to improve packaging efficiency, saves packaging cost.During actual implementation, suitable getter is selected, makes full use of the reactivation characteristic of getter, by the way of interruption, repeatedly activating, to keep the air-breathing activity of getter surface.
Description
Technical field
The present invention relates to a kind of vacuum bakeout techniques based on getter thermo-electrically compounding activation, belong to semiconductor packages skill
Art field.
Background technique
MEMS device Vacuum Package be it is a kind of use sealing cavity provide high vacuum working environment for MEMS device, with this
Improve the encapsulation technology of the performance of MEMS device.In order to extend the service life of vacuum device, the reliability of vacuum device is ensured, usually
Getter material is introduced in vacuum encapsulation process.
Vacuum encapsulation process mainly includes bakeout degassing, getter activation and cover board welding three parts.Wherein bakeout degassing
The step of being time-consuming longest in technique, usually needs to dry in order to which the gas that component to be packaged is precipitated is discharged before getter activation
Roasting a few hours even tens of hours.The bakeout degassing time is longer, vacuum maintains and heat loss is larger, seriously constrains Vacuum Package
Single machine production capacity, packaging cost greatly improved.
Summary of the invention
It is a kind of by bakeout degassing and getter two techniques of activation the purpose of the present invention is in view of the above shortcomings, providing
Step carries out simultaneously, in the rear half stage of bakeout degassing, activated in advance getter, to assist arranging in packaging surface and cavity
Gas reduces the time of bakeout degassing on the basis of ensuring that getter finally effectively activates, to improve packaging efficiency, saves
About packaging cost.
Technical solution of the present invention, a kind of vacuum bakeout technique based on getter thermo-electrically compounding activation, in bakeout degassing
Getter activated in advance is participated in degasification by electrically heated mode by the rear half stage of step, special using the reactivation of getter
Property, activated degasser repeatedly, to reach the maximal efficiency of pumping.Terminate baking and getter activation after last time activated at
Technique, into vacuum welding step.
Specific step is as follows:
(1) all parts of device to be packaged are fixed on the fixture in soldering furnace, close cavity, open vacuum pump；
(2) vacuum degree reaches 10 in soldering furnace-3After Pa, soldering furnace cavity inner temperature is increased to baking temperature by open heat lamps pipe
120 ~ 150 DEG C of degree starts bakeout degassing；
(3) when welding furnace cavity in vacuum degree reach 10-4Pa, i.e. time T1When, the starting of getter activation technology；
(4) according to getter activation and reactivation characteristic, getter activation technology temperature spot is divided into 4, passes through getter
Getter temperature is increased to the first activationary temperature point by internal heater strip, and is kept for a period of time to T2With activation；
(5) reduce getter heater strip both ends electric current, getter temperature is down to 200 ~ 250 DEG C of operating temperature of getter, with
Furnace continues to be baked to time T3；
(6) start getter secondary activating technique, increase getter heater strip electric current, getter temperature is increased to the second activation
Temperature spot, and keep to T4With activation；
(7) reduce getter heater strip electric current, getter temperature is down to the operating temperature of getter, when continuing to be baked to furnace
Between T5；
(8) getter temperature is increased to third activation to starting getter by activation technology, increasing getter heater strip electric current three times
Temperature spot, and keep to T6With activation；
(9) reduce getter heater strip electric current, getter temperature is down to the operating temperature of getter, when continuing to be baked to furnace
Between T7；
(10) getter temperature is increased to the 4th and swashed starting getter by activation technology, increasing getter heater strip electric current three times
Temperature spot living, and keep to T8With activation；
(11) getter heater strip electric current is cut off, getter temperature is down to furnace temperature, continues to be baked to T9, furnace cavity is welded at this time
Interior vacuum degree is up to 10-5Magnitude；
(12) terminate bakeout degassing and getter activates process, into welding step.
The getter is that performance is higher than the 50% of device lifetime needs；Encapsulation for temperature sensor, getter swash
Temperature living is no more than 450 DEG C, and getter has self-heating resistance wire, supports pulse electrical activation.
Further, the getter is formed by zirconium vanadium iron alloy and zirconium powder with the ratio mixing high temperature sintering of 6:4.Air-breathing
Agent porosity is not less than 35%, about 38 μm of size of powder particles.Getter activationary temperature is down to 300 DEG C.
Further, the getter is specially ZrVFe porous alloy getter.Specific such as St172.
Further, the activation technology temperature spot is respectively the first 300 ~ 350 DEG C of activationary temperature point, the second activationary temperature
350 ~ 400 DEG C of point, 400 ~ 450 DEG C of point of third activationary temperature, the 4th 450 ~ 500 DEG C of activationary temperature point.
The activationary temperature point number, the selection for activating number and reactivation time depend on packaging and soldering furnace
Actual condition and be varied, premised on inspiratory capacity needed for getter provides packed device lifetime enough.Getter swashs
The living and reactivation time is gradually shortened, and activationary temperature gradually rises.
Activationary temperature point number is 3-6 in the activation technology, corresponding to activate number consistent with temperature spot number secondary.?
In MEMS device vacuum encapsulation process, in the rear half stage of bakeout degassing step, getter is shifted to an earlier date by electrically heated mode
Activation participates in degasification, using getter reactivation characteristic, activated degasser repeatedly, to reach the maximal efficiency of pumping.Last
Terminate baking and getter activation technology after secondary activated at, into vacuum welding step.By this process integration, cancel single
Getter activation is dissolved into bakeout degassing process, so that the main technique of Vacuum Package be greatly reduced by only getter activationary time
Time.
Getter selection: selection can reactivation gettering material getter, the pumping property of getter is higher than device lifetime
50% needed；Encapsulation for temperature sensor, getter activationary temperature are no more than 450 DEG C, support pulse electrical activation.
Getter activates Intervention Timing selection: Vacuum Package all parts are fixed in soldering furnace on fixture, are carried out first
Bakeout degassing, vacuum degree tends towards stability and less than 10 in furnace to be welded-4When pa, can activated degasser, improve exhaust efficiency.
Getter is repeatedly activated using electrically heated mode, and activation number is warm according to the size of packaging and activation
Depending on the limitation of degree.Usual getter activation and reactivation time are gradually shortened, and activationary temperature gradually rises.
Temperature gradient is calculated according to the distance of getter distance packaged chip, getter electric heating activates maximum temperature with not
Damage chip is principle.
Usual bakeout degassing temperature is lower, and working efficiency is lower at such a temperature for getter.It is reduced to after getter activation
Operating temperature, that is, getter heater strip both ends keep a constant current after activating, to ensure that getter temperature is slightly above operating temperature,
Improve the pumping efficiency of getter.
Getter activation and reactivation initial stage, weld furnace cavity in vacuum degree can of short duration reduction, with getter
Activation continues and completes, vacuum up in cavity, and higher than getter activation initial vacuum degree.
Beneficial effects of the present invention: the present invention reduces bakeout degassing on the basis of ensuring that getter finally effectively activates
Time save packaging cost to improve packaging efficiency.During actual implementation, suitable getter is selected, is made full use of
The reactivation characteristic of getter, by the way of interruption, repeatedly activating, to keep the air-breathing activity of getter surface.
Detailed description of the invention
Fig. 1 is baking process curve graph of the embodiment 1 based on getter thermo-electrically compounding activation.
Description of symbols: 1, getter temperature；2, reflow oven temperatures.
Specific embodiment
Embodiment 1
By taking infrared focal plane device ceramic cartridge Vacuum Package as an example, chip is developed using Yantai Raytron Technology Co., Ltd.
Novel oxidized vanadium infrared focal plane array device RCIR03, array sizes be 640 × 512, pixel dimension be 25 μm；Getter
Using the St172 ZrVFe alloy degasser of SAES company, gross mass about 46mg, outer diameter 0.2mm, adding thermal resistance wire material is
Mo, 300 DEG C of activationary temperature or more.Infrared optical window uses germanite glass, and encapsulating package uses aluminium oxide ceramics.
Fig. 1 is the baking process curve graph based on getter thermo-electrically compounding activation.Wherein reflow oven temperatures are baking benchmark
Temperature, getter temperature are the temperature of getter in packaging.By adjusting the temperature of getter, getter is swashed
Work-air-breathing-reactivation process cycles improve the efficiency of whole baking process, reduce heat loss.In figure 1 be getter temperature, 2
For reflow oven temperatures.
After the techniques such as cleaning, chip patch, wire bonding, optical window welding, the getter welding for completing package parts, open
Beginning vacuum encapsulation process process, the specific steps are as follows:
(1) ceramic base for posting infra-red focus planar chip, the nut cap for being welded with germanite glass optical window are fixed in vacuum back-flow furnace
Fixture on, close cavity, open vacuum pump.
(2) when in reflow ovens vacuum degree reach 10-3Soldering furnace cavity inner temperature is increased to 150 by Pa, open heat lamps pipe
DEG C, start bakeout degassing.
(3) when welding furnace cavity in vacuum degree reach 10-4Pa, i.e. T1At the moment, getter electrode both ends, which power on, is heated to
One 350 DEG C of activationary temperature.
30min to T is kept under (4) first activationary temperatures2。
(5) in T2Moment reduces getter heater strip both ends electric current, getter temperature is down to the operating temperature of getter
200 DEG C, continue to toast 30min to T with furnace3。
(6) in T3Moment starts second of activation technology of getter, getter heater strip electric current is increased, by getter temperature
Degree is increased to 350 DEG C of the second activationary temperature, and keeps 20min to T4。
(7) in T4Moment reduces getter heater strip electric current, getter temperature is down to the operating temperature 200 of getter
DEG C, continue to toast 30min to time T with furnace5。
(8) in T5Moment starts getter third time activation technology, getter heater strip electric current is increased, by getter temperature
Degree is increased to 400 DEG C of point of third activationary temperature, and keeps to 10min to T6。
(9) in T6Moment reduces getter heater strip electric current, getter temperature is down to the operating temperature 200 of getter
DEG C, continue to toast 30min to time T with furnace7。
(10) in T7Moment starts getter third time activation technology, getter heater strip electric current is increased, by getter temperature
Degree is increased to the 4th 450 DEG C of activationary temperature point, and keeps to 5min to T8。
(11) in T8Moment cuts off getter heater strip electric current, getter temperature is down to 120 DEG C of furnace temperature, continues to toast
60min to T9, the vacuum degree in furnace cavity is welded at this time up to 10-5Magnitude.
(12) terminate bakeout degassing and getter activates process, into sealing cap welding step.
Claims (8)
1. a kind of vacuum bakeout technique based on getter thermo-electrically compounding activation, it is characterized in that: in the later half of bakeout degassing step
Getter activated in advance is participated in degasification by electrically heated mode and is activated repeatedly using the reactivation characteristic of getter by the stage
Getter terminates baking and getter activation technology to reach the maximal efficiency of pumping after last time activated at, into true
Empty welding step.
2. the vacuum bakeout technique as described in claim 1 based on getter thermo-electrically compounding activation, it is characterized in that steps are as follows:
(1) all parts of device to be packaged are fixed on the fixture in soldering furnace, close cavity, open vacuum pump；
(2) vacuum degree reaches 10 in soldering furnace-3After Pa, soldering furnace cavity inner temperature is increased to baking temperature by open heat lamps pipe
120 ~ 150 DEG C of degree starts bakeout degassing；
(3) when welding furnace cavity in vacuum degree reach 10-4Pa, i.e. time T1When, the starting of getter activation technology；
(4) according to getter activation and reactivation characteristic, getter activation technology temperature spot is divided into 4, passes through getter
Getter temperature is increased to the first activationary temperature point by internal heater strip, and is kept for a period of time to T2With activation；
(5) reduce getter heater strip both ends electric current, getter temperature is down to 200 ~ 250 DEG C of operating temperature of getter, with
Furnace continues to be baked to time T3；
(6) start getter secondary activating technique, increase getter heater strip electric current, getter temperature is increased to the second activation
Temperature spot, and keep to T4With activation；
(7) reduce getter heater strip electric current, getter temperature is down to the operating temperature of getter, when continuing to be baked to furnace
Between T5；
(8) getter temperature is increased to third activation to starting getter by activation technology, increasing getter heater strip electric current three times
Temperature spot, and keep to T6With activation；
(9) reduce getter heater strip electric current, getter temperature is down to the operating temperature of getter, when continuing to be baked to furnace
Between T7；
(10) getter temperature is increased to the 4th and swashed starting getter by activation technology, increasing getter heater strip electric current three times
Temperature spot living, and keep to T8With activation；
(11) getter heater strip electric current is cut off, getter temperature is down to furnace temperature, continues to be baked to T9, furnace cavity is welded at this time
Interior vacuum degree is up to 10-5Magnitude；
(12) terminate bakeout degassing and getter activates process, into welding step.
3. the vacuum bakeout technique as described in claim 1 based on getter thermo-electrically compounding activation, it is characterized in that: the air-breathing
Agent is that gettering ability is higher than the 50% of device projected life needs；Encapsulation for temperature sensor, getter activationary temperature is not
More than 450 DEG C, getter has self-heating resistance wire, supports pulse electrical activation.
4. the vacuum bakeout technique as described in claim 1 based on getter thermo-electrically compounding activation, it is characterized in that: the air-breathing
Agent is formed by zirconium vanadium iron alloy and zirconium powder with the ratio mixing high temperature sintering of 6:4.
5. the vacuum bakeout technique as claimed in claim 4 based on getter thermo-electrically compounding activation, it is characterized in that: the air-breathing
Agent is specially ZrVFe porous alloy getter.
6. the vacuum bakeout technique as claimed in claim 4 based on getter thermo-electrically compounding activation, it is characterized in that: the activation
Technological temperature point is respectively the first 300 ~ 350 DEG C of activationary temperature point, the second 350 ~ 400 DEG C of activationary temperature point, third activationary temperature
400 ~ 450 DEG C of point, the 4th 450 ~ 500 DEG C of activationary temperature point.
7. the vacuum bakeout technique as claimed in claim 2 based on getter thermo-electrically compounding activation, it is characterized in that: the activation
Temperature spot number, the selection for activating number and reactivation time, depending on the actual condition of packaging and soldering furnace
Variation, needed for getter provides be packaged device lifetime enough premised on inspiratory capacity.
8. the vacuum bakeout technique as claimed in claim 7 based on getter thermo-electrically compounding activation, it is characterized in that: the activation
Activationary temperature point number is 3-6 in technique, corresponding to activate number consistent with temperature spot number.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910389354.2A CN110078020B (en) | 2019-05-10 | 2019-05-10 | Vacuum baking process based on getter thermal-electric composite activation |
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| CN201910389354.2A CN110078020B (en) | 2019-05-10 | 2019-05-10 | Vacuum baking process based on getter thermal-electric composite activation |
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| CN106847759A (en) * | 2017-02-23 | 2017-06-13 | 浙江大立科技股份有限公司 | Vacuum encapsulation structure and its method for packing, the device for Vacuum Package |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85104338A (en) * | 1985-06-05 | 1986-12-03 | 西安高压电器研究所 | Place the method for the non-normal temperature getter that evapotranspires |
| JP2008084778A (en) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | Image display device |
| CN101582363A (en) * | 2008-05-14 | 2009-11-18 | 清华大学 | Sealing-in method of vacuum device |
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