CN203674191U - Vacuum ceramic packaging structure for sensor - Google Patents
Vacuum ceramic packaging structure for sensor Download PDFInfo
- Publication number
- CN203674191U CN203674191U CN201320850207.9U CN201320850207U CN203674191U CN 203674191 U CN203674191 U CN 203674191U CN 201320850207 U CN201320850207 U CN 201320850207U CN 203674191 U CN203674191 U CN 203674191U
- Authority
- CN
- China
- Prior art keywords
- getter
- chip
- boss
- shell
- transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims description 7
- 229910000833 kovar Inorganic materials 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model relates to a vacuum ceramic packaging structure for a sensor. The vacuum ceramic packaging structure comprises a housing, a getter, a chip, and a germanium window. The germanium window is fixed on the top of the housing. The getter and the chip are arranged inside the housing and are fixed on the bottom of the housing respectively through getter bosses and chip bosses. The chip is arranged over the getter. The getter is disposed under the chip such that packaging volume can be greatly decreased and device cost is further reduced.
Description
Technical field
The utility model relates to infrared light transducer[sensor and other electronic sensor, specifically a kind of vacuum ceramic encapsulating structure of transducer.
Background technology
A lot of electronic devices and transducer need to be worked in vacuum or other low-pressure inert gas.Wherein, the infrared focal plane array of infrared light transducer[sensor need to be worked under vacuum environment.The basic principle of infrared light transducer[sensor is that transducer absorbs the infrared light that target object sends, and device temperature is changed, and the resistance of sensor sensing unit changes along with temperature, finally exports the signal of telecommunication that can detect.
Infrared focal plane array needs a vacuum seal environment, realizes the isolation of heat.At present, the packing forms that infrared focal plane array is conventional has metallic packaging, ceramic packaging etc.Because metallic packaging cost is higher, increasing commercial market starts to adopt ceramic packaging.Cost will play conclusive effect for the growth in infrared focal plane array market.
Infrared focal plane array can reach better level (tens millitorrs are even higher) in encapsulation initial stage vacuum degree, but due to the leak rate of the venting of encapsulating material self and shell encapsulation, component vacuum degree will decline very soon, thereby make device disablement.So just greatly reduce the useful life of device, improved use cost, limited market development.Therefore, can find a kind of component vacuum degree long term maintenance that makes will greatly to reduce the use cost of device in the method for higher level.
In prior art, the method that maintains device vacuum degree is that in the time that component vacuum degree drops to a certain degree, thereby activated degasser makes the vacuum degree of device continue to meet the instructions for use of device at getter of the indoor placement of component vacuum, thereby extend the useful life of device, reduce use cost.
At present, the general and chip of getter is placed in encapsulating package side by side, and this structure has increased the volume of vacuum chamber, and volume and the consumption of encapsulating package and germanium window and other encapsulation consumptive materials are increased, and larger chamber causes larger vacuum maintenance difficulty simultaneously.
Utility model content
The utility model, for the problems referred to above, provides a kind of vacuum ceramic encapsulating structure of transducer, and this encapsulating structure can reduce encapsulation volume, thereby reduces the cost of device.
According to the technical solution of the utility model: a kind of vacuum ceramic encapsulating structure of transducer, comprise shell, getter, chip and germanium window, described germanium window is fixed on the top of described shell, and described getter and described chip are positioned at described shell; Described getter and described chip are fixed on respectively the bottom of described shell by getter boss and chip boss, and described chip is positioned at the top of described getter.
Described getter boss has two, and the two ends of described getter are separately fixed on described two getter boss.
The two ends of described getter are respectively arranged with positioning step.
Described chip boss has two, and the two ends of described chip are separately fixed on described two chip boss.
Described chip and described getter are overlooked as criss-cross construction.
Described shell is ceramic material, and described getter boss is kovar alloy material, and described chip boss is kovar alloy material.
On described shell, be provided with blast pipe, the outer end of described blast pipe is provided with fluid sealant.
The both sides of described shell are furnished with respectively shell pin, and shell pin is connected with described chip by bonding metal lead wire respectively described in every side.
Technique effect of the present utility model is: the utility model is placed on getter the below of chip, can greatly reduce encapsulation volume, thereby reduces the cost of device.
Accompanying drawing explanation
Fig. 1 is structure vertical view of the present utility model, has wherein removed germanium window, getter and chip.
Fig. 2 is structure vertical view of the present utility model, has wherein removed germanium window.
Fig. 3 is structure vertical view of the present utility model.
Fig. 4 is that structure master of the present utility model looks cutaway view.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is further described.
In Fig. 1～Fig. 4, comprise shell 1, getter boss 2, chip boss 3, getter 4, chip 5, blast pipe 6, shell pin 7, bonding metal lead wire 8, germanium window 9, fluid sealant 10, positioning step 11 etc.
As shown in Figure 1 to 4, the utility model is a kind of vacuum ceramic encapsulating structure of transducer, comprises shell 1, getter 4, chip 5 and germanium window 9.Shell 1 is ceramic material, is provided with blast pipe 6 on shell 1, and the outer end of blast pipe 6 is provided with fluid sealant 10.
Germanium window 9 is fixed on the top of shell 1, and germanium window 9 adopts the mode of Reflow Soldering to weld, and the selection of scolder can be chosen as required.
Getter 4 and chip 5 are positioned at shell 1.Getter 4 and chip 5 are fixed on respectively the bottom of shell 1 by getter boss 2 and chip boss 3, and chip 5 is positioned at the top of getter 4.Chip 5 is overlooked as criss-cross construction with getter 4.
Getter boss 2 has two, and the two ends of getter 4 are separately fixed on two getter boss 2.Getter boss 2 is kovar alloy material, and the two ends of getter 4 are respectively arranged with positioning step 11.
The both sides of shell 1 are furnished with respectively shell pin 7, and every side shell pin 7 is connected with chip 5 by bonding metal lead wire 8 respectively.
Fabrication processing of the present utility model is described below:
1. getter 4 is installed
As shown in Figure 1, first carry out the welding of getter boss 2 and chip boss 3.The material of boss adopts kovar alloy, and welding procedure can be selected as required, such as carrying out soldering or sintering process.Getter boss 2 and chip boss 3 will have certain difference in height, to can hold the installation of getter 4 and chip 5.
Then carry out the installation of getter 4, getter 4 is welded to getter boss 2.The welding procedure of getter adopts spot-welding technology, as shown in Figure 3.
2. chip 5 is installed
The paster technique of chip 5 selects silver slurry to paste.After paster, at 150 ℃, carry out solidifying for two hours.
After getter 4 and chip 5 installations, 8 bondings that go between respectively, as shown in Figure 2.
3. germanium window 9 welds
The welding of germanium window 9, adopts the mode of Reflow Soldering to weld, and the selection of scolder can be chosen as required.
4. leak detection
After 9 installations of germanium window, device is hunted leak with leak detector.Can not reach set index if leak rate detects, mean that germanium window welding procedure fails to reach requirement, device is scrapped processing.
5. exhaust
After device leak detection is passed through, upper exhaust station carries out exhaust.Exhaust air technique temperature was at 150 ℃, 48 hours.After exhaust completes, block blast pipe 6 and carry out blanking.Blast pipe 6 blocks and adopts pincers envelope technique to seal.
The utility model is placed on getter 4 below of chip 5, can greatly reduce encapsulation volume, thereby reduces the cost of device.
Claims (8)
1. the vacuum ceramic encapsulating structure of a transducer, comprise shell (1), getter (4), chip (5) and germanium window (9), described germanium window (9) is fixed on the top of described shell (1), and described getter (4) and described chip (5) are positioned at described shell (1); It is characterized in that: described getter (4) and described chip (5) are fixed on respectively the bottom of described shell (1) by getter boss (2) and chip boss (3), and described chip (5) is positioned at the top of described getter (4).
2. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described getter boss (2) has two, the two ends of described getter (4) are separately fixed on described two getter boss (2).
3. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 2, it is characterized in that: the two ends of described getter (4) are respectively arranged with positioning step (11).
4. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described chip boss (3) has two, the two ends of described chip (5) are separately fixed on described two chip boss (3).
5. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described chip (5) is overlooked as criss-cross construction with described getter (4).
6. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: described shell (1) is ceramic material, described getter boss (2) is kovar alloy material, and described chip boss (3) is kovar alloy material.
7. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: on described shell (1), be provided with blast pipe (6), the outer end of described blast pipe (6) is provided with fluid sealant (10).
8. according to the vacuum ceramic encapsulating structure of transducer claimed in claim 1, it is characterized in that: the both sides of described shell (1) are furnished with respectively shell pin (7), shell pin (7) is connected with described chip (5) by bonding metal lead wire (8) respectively described in every side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320850207.9U CN203674191U (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure for sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320850207.9U CN203674191U (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure for sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203674191U true CN203674191U (en) | 2014-06-25 |
Family
ID=50970456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320850207.9U Expired - Lifetime CN203674191U (en) | 2013-12-19 | 2013-12-19 | Vacuum ceramic packaging structure for sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203674191U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824817A (en) * | 2013-12-19 | 2014-05-28 | 无锡微奇科技有限公司 | Vacuum ceramic packaging structure of sensor |
| CN108370244A (en) * | 2015-12-22 | 2018-08-03 | 京瓷株式会社 | Sealing ring, taking in electronic element packaging body, electronic equipment and their manufacturing method |
-
2013
- 2013-12-19 CN CN201320850207.9U patent/CN203674191U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103824817A (en) * | 2013-12-19 | 2014-05-28 | 无锡微奇科技有限公司 | Vacuum ceramic packaging structure of sensor |
| CN108370244A (en) * | 2015-12-22 | 2018-08-03 | 京瓷株式会社 | Sealing ring, taking in electronic element packaging body, electronic equipment and their manufacturing method |
| CN108370244B (en) * | 2015-12-22 | 2021-12-24 | 京瓷株式会社 | Seal ring, package for housing electronic component, electronic device, and methods for manufacturing seal ring and package for housing electronic component |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: WUXI YUANCHUANG HUAXIN MICROELECTROMECHANICAL CO., Free format text: FORMER OWNER: WUXI WEIQI SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150323 Owner name: WUXI WEIQI SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20150323 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 214000 WUXI, JIANGSU PROVINCE TO: 214200 WUXI, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150323 Address after: 214200, No. 16, apricot Road, Yixing Economic Development Zone, Wuxi, Jiangsu, Yixing Patentee after: WUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO.,LTD. Patentee after: WUXI WEIQI TECHNOLOGY CO.,LTD. Address before: 214000 Jiangsu New District of Wuxi City Branch Park Chinese Sensor Network International Innovation Park B Building 1 floor Patentee before: WUXI WEIQI TECHNOLOGY CO.,LTD. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140625 |
|
| CX01 | Expiry of patent term |